JPWO2020234681A1 - - Google Patents
Info
- Publication number
- JPWO2020234681A1 JPWO2020234681A1 JP2021520482A JP2021520482A JPWO2020234681A1 JP WO2020234681 A1 JPWO2020234681 A1 JP WO2020234681A1 JP 2021520482 A JP2021520482 A JP 2021520482A JP 2021520482 A JP2021520482 A JP 2021520482A JP WO2020234681 A1 JPWO2020234681 A1 JP WO2020234681A1
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- G—PHYSICS
- G06—COMPUTING OR CALCULATING; COUNTING
- G06N—COMPUTING ARRANGEMENTS BASED ON SPECIFIC COMPUTATIONAL MODELS
- G06N3/00—Computing arrangements based on biological models
- G06N3/02—Neural networks
- G06N3/06—Physical realisation, i.e. hardware implementation of neural networks, neurons or parts of neurons
- G06N3/063—Physical realisation, i.e. hardware implementation of neural networks, neurons or parts of neurons using electronic means
-
- G—PHYSICS
- G06—COMPUTING OR CALCULATING; COUNTING
- G06G—ANALOGUE COMPUTERS
- G06G7/00—Devices in which the computing operation is performed by varying electric or magnetic quantities
- G06G7/12—Arrangements for performing computing operations, e.g. operational amplifiers specially adapted therefor
- G06G7/16—Arrangements for performing computing operations, e.g. operational amplifiers specially adapted therefor for multiplication or division
-
- G—PHYSICS
- G06—COMPUTING OR CALCULATING; COUNTING
- G06G—ANALOGUE COMPUTERS
- G06G7/00—Devices in which the computing operation is performed by varying electric or magnetic quantities
- G06G7/12—Arrangements for performing computing operations, e.g. operational amplifiers specially adapted therefor
- G06G7/18—Arrangements for performing computing operations, e.g. operational amplifiers specially adapted therefor for integration or differentiation; for forming integrals
- G06G7/184—Arrangements for performing computing operations, e.g. operational amplifiers specially adapted therefor for integration or differentiation; for forming integrals using capacitive elements
-
- G—PHYSICS
- G06—COMPUTING OR CALCULATING; COUNTING
- G06G—ANALOGUE COMPUTERS
- G06G7/00—Devices in which the computing operation is performed by varying electric or magnetic quantities
- G06G7/12—Arrangements for performing computing operations, e.g. operational amplifiers specially adapted therefor
- G06G7/19—Arrangements for performing computing operations, e.g. operational amplifiers specially adapted therefor for forming integrals of products, e.g. Fourier integrals, Laplace integrals or correlation integrals; for analysis or synthesis of functions using orthogonal functions
-
- G—PHYSICS
- G06—COMPUTING OR CALCULATING; COUNTING
- G06G—ANALOGUE COMPUTERS
- G06G7/00—Devices in which the computing operation is performed by varying electric or magnetic quantities
- G06G7/48—Analogue computers for specific processes, systems or devices, e.g. simulators
- G06G7/60—Analogue computers for specific processes, systems or devices, e.g. simulators for living beings, e.g. their nervous systems ; for problems in the medical field
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/54—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using elements simulating biological cells, e.g. neuron
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/01—Manufacture or treatment
- H10B12/09—Manufacture or treatment with simultaneous manufacture of the peripheral circuit region and memory cells
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
- H10D30/674—Thin-film transistors [TFT] characterised by the active materials
- H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/50—Peripheral circuit region structures
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D87/00—Integrated devices comprising both bulk components and either SOI or SOS components on the same substrate
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Theoretical Computer Science (AREA)
- Mathematical Physics (AREA)
- Biomedical Technology (AREA)
- Health & Medical Sciences (AREA)
- General Physics & Mathematics (AREA)
- Life Sciences & Earth Sciences (AREA)
- Biophysics (AREA)
- Computer Hardware Design (AREA)
- Software Systems (AREA)
- General Health & Medical Sciences (AREA)
- Neurology (AREA)
- Molecular Biology (AREA)
- Computing Systems (AREA)
- General Engineering & Computer Science (AREA)
- Data Mining & Analysis (AREA)
- Evolutionary Computation (AREA)
- Artificial Intelligence (AREA)
- Computational Linguistics (AREA)
- Manufacturing & Machinery (AREA)
- Neurosurgery (AREA)
- Physiology (AREA)
- Power Engineering (AREA)
- Thin Film Transistor (AREA)
- Computational Mathematics (AREA)
- Mathematical Analysis (AREA)
- Mathematical Optimization (AREA)
- Pure & Applied Mathematics (AREA)
- Semiconductor Integrated Circuits (AREA)
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2024070487A JP7661571B2 (ja) | 2019-05-17 | 2024-04-24 | 半導体装置および電子機器 |
| JP2025061121A JP7819385B2 (ja) | 2019-05-17 | 2025-04-02 | 半導体装置および電子機器 |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2019093998 | 2019-05-17 | ||
| JP2019093998 | 2019-05-17 | ||
| PCT/IB2020/054307 WO2020234681A1 (ja) | 2019-05-17 | 2020-05-07 | 半導体装置、及び電子機器 |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2024070487A Division JP7661571B2 (ja) | 2019-05-17 | 2024-04-24 | 半導体装置および電子機器 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JPWO2020234681A1 true JPWO2020234681A1 (https=) | 2020-11-26 |
| JPWO2020234681A5 JPWO2020234681A5 (https=) | 2023-04-26 |
| JP7480133B2 JP7480133B2 (ja) | 2024-05-09 |
Family
ID=73458412
Family Applications (3)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2021520482A Active JP7480133B2 (ja) | 2019-05-17 | 2020-05-07 | 半導体装置、及び電子機器 |
| JP2024070487A Active JP7661571B2 (ja) | 2019-05-17 | 2024-04-24 | 半導体装置および電子機器 |
| JP2025061121A Active JP7819385B2 (ja) | 2019-05-17 | 2025-04-02 | 半導体装置および電子機器 |
Family Applications After (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2024070487A Active JP7661571B2 (ja) | 2019-05-17 | 2024-04-24 | 半導体装置および電子機器 |
| JP2025061121A Active JP7819385B2 (ja) | 2019-05-17 | 2025-04-02 | 半導体装置および電子機器 |
Country Status (5)
| Country | Link |
|---|---|
| US (2) | US12475361B2 (https=) |
| JP (3) | JP7480133B2 (https=) |
| KR (1) | KR20220008291A (https=) |
| CN (1) | CN113826103A (https=) |
| WO (1) | WO2020234681A1 (https=) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE102020119273A1 (de) * | 2019-08-30 | 2021-03-04 | Taiwan Semiconductor Manufacturing Co. Ltd. | Speichervorrichtung mit abstimmbarem probabilistischem Zustand |
| KR20230039668A (ko) | 2020-07-17 | 2023-03-21 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 전자 기기 |
| KR20230047117A (ko) * | 2020-08-03 | 2023-04-06 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
| US20220374161A1 (en) * | 2021-05-19 | 2022-11-24 | Silicon Storage Technology, Inc. | Output circuit for analog neural memory in a deep learning artificial neural network |
| US20230297335A1 (en) * | 2022-03-15 | 2023-09-21 | Qualcomm Incorporated | Hybrid Compute-in-Memory |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001052101A (ja) * | 1999-08-09 | 2001-02-23 | Handotai Rikougaku Kenkyu Center:Kk | 半導体演算回路及び演算装置 |
| JP2007241475A (ja) * | 2006-03-06 | 2007-09-20 | Canon Inc | 差動乗算回路及び積和演算回路 |
| JP2019003464A (ja) * | 2017-06-16 | 2019-01-10 | 株式会社半導体エネルギー研究所 | 半導体装置、演算回路及び電子機器 |
Family Cites Families (44)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5264734A (en) * | 1992-05-19 | 1993-11-23 | Intel Corporation | Difference calculating neural network utilizing switched capacitors |
| EP0928004A3 (en) * | 1997-12-31 | 1999-12-15 | Texas Instruments Inc. | Ferroelectric memory |
| JP4620943B2 (ja) | 2003-10-16 | 2011-01-26 | キヤノン株式会社 | 積和演算回路及びその方法 |
| WO2007125590A1 (ja) * | 2006-04-28 | 2007-11-08 | Spansion Llc | 半導体装置およびその制御方法 |
| US7715247B2 (en) * | 2008-09-06 | 2010-05-11 | Juhan Kim | One-time programmable read-only memory with a time-domain sensing scheme |
| JP2012160230A (ja) * | 2011-01-31 | 2012-08-23 | Elpida Memory Inc | 半導体装置 |
| JP6106043B2 (ja) * | 2013-07-25 | 2017-03-29 | ルネサスエレクトロニクス株式会社 | 半導体集積回路装置 |
| US9275702B2 (en) | 2013-11-29 | 2016-03-01 | The Regents Of The University Of Michigan | Memory circuitry including read voltage boost |
| US9384792B2 (en) * | 2014-04-09 | 2016-07-05 | Globalfoundries Inc. | Offset-cancelling self-reference STT-MRAM sense amplifier |
| US9773832B2 (en) | 2014-12-10 | 2017-09-26 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and electronic device |
| US9716852B2 (en) | 2015-04-03 | 2017-07-25 | Semiconductor Energy Laboratory Co., Ltd. | Broadcast system |
| JP6674838B2 (ja) | 2015-05-21 | 2020-04-01 | 株式会社半導体エネルギー研究所 | 電子装置 |
| US10096631B2 (en) * | 2015-11-30 | 2018-10-09 | Semiconductor Energy Laboratory Co., Ltd. | Signal processing circuit and semiconductor device including the signal processing circuit |
| US10305460B2 (en) | 2016-02-23 | 2019-05-28 | Semiconductor Energy Laboratory Co., Ltd. | Data comparison circuit and semiconductor device |
| CN108701480B (zh) | 2016-03-10 | 2022-10-14 | 株式会社半导体能源研究所 | 半导体装置 |
| CN108701474B (zh) | 2016-03-18 | 2022-12-30 | 株式会社半导体能源研究所 | 半导体装置及使用该半导体装置的系统 |
| US9851914B2 (en) * | 2016-03-24 | 2017-12-26 | Texas Instruments Incorporated | Random number generation in ferroelectric random access memory (FRAM) |
| US9934826B2 (en) | 2016-04-14 | 2018-04-03 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| US10109633B2 (en) | 2016-04-27 | 2018-10-23 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device, electronic device, and authentication system |
| WO2018002774A1 (en) | 2016-06-29 | 2018-01-04 | Semiconductor Energy Laboratory Co., Ltd. | Electronic device, operation method of the electronic device, and moving vehicle |
| US10504204B2 (en) | 2016-07-13 | 2019-12-10 | Semiconductor Energy Laboratory Co., Ltd. | Electronic device |
| US20180018565A1 (en) | 2016-07-14 | 2018-01-18 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device, display system, and electronic device |
| KR20210134066A (ko) | 2016-08-03 | 2021-11-08 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 촬상 장치, 촬상 모듈, 전자 기기, 및 촬상 시스템 |
| CN109643514B (zh) | 2016-08-26 | 2023-04-04 | 株式会社半导体能源研究所 | 显示装置及电子设备 |
| WO2018069785A1 (en) * | 2016-10-12 | 2018-04-19 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and system using the same |
| JP7073090B2 (ja) | 2016-12-28 | 2022-05-23 | 株式会社半導体エネルギー研究所 | ニューラルネットワークを利用したデータ処理装置、電子部品、および電子機器 |
| WO2018138603A1 (en) | 2017-01-26 | 2018-08-02 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and electronic device including the semiconductor device |
| WO2018163005A1 (ja) | 2017-03-10 | 2018-09-13 | 株式会社半導体エネルギー研究所 | タッチパネルシステム、電子機器および半導体装置 |
| JP7187442B2 (ja) | 2017-04-10 | 2022-12-12 | 株式会社半導体エネルギー研究所 | 半導体装置、電子部品、及び電子機器 |
| WO2018189620A1 (ja) | 2017-04-14 | 2018-10-18 | 株式会社半導体エネルギー研究所 | ニューラルネットワーク回路 |
| US11314484B2 (en) | 2017-05-19 | 2022-04-26 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device comprising operation circuits and switch circuits |
| JP6956784B2 (ja) | 2017-06-08 | 2021-11-02 | 株式会社半導体エネルギー研究所 | 撮像装置 |
| US11515873B2 (en) * | 2018-06-29 | 2022-11-29 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and electronic device |
| US10924090B2 (en) | 2018-07-20 | 2021-02-16 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device comprising holding units |
| US11417704B2 (en) | 2018-10-19 | 2022-08-16 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and electronic device |
| WO2020095140A1 (ja) | 2018-11-08 | 2020-05-14 | 株式会社半導体エネルギー研究所 | 半導体装置、及び電子機器 |
| TWI906891B (zh) | 2019-02-15 | 2025-12-01 | 日商半導體能源研究所股份有限公司 | 半導體裝置及電子裝置 |
| CN113614727A (zh) | 2019-03-08 | 2021-11-05 | 株式会社半导体能源研究所 | Ai系统及ai系统的工作方法 |
| US11875838B2 (en) | 2019-07-12 | 2024-01-16 | Semiconductor Energy Laboratory Co., Ltd. | Memory device, semiconductor device, and electronic device |
| JP2021043712A (ja) | 2019-09-11 | 2021-03-18 | 株式会社半導体エネルギー研究所 | 半導体装置、及び電子機器 |
| US11004493B1 (en) * | 2019-12-05 | 2021-05-11 | Micron Technology, Inc. | Differential amplifier sensing schemes for non-switching state compensation |
| KR20230039668A (ko) | 2020-07-17 | 2023-03-21 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 전자 기기 |
| CN115836293A (zh) | 2020-07-17 | 2023-03-21 | 株式会社半导体能源研究所 | 半导体装置及电子设备 |
| US11056178B1 (en) * | 2020-07-20 | 2021-07-06 | Micron Technology, Inc. | Read operations based on a dynamic reference |
-
2020
- 2020-05-07 JP JP2021520482A patent/JP7480133B2/ja active Active
- 2020-05-07 US US17/611,207 patent/US12475361B2/en active Active
- 2020-05-07 WO PCT/IB2020/054307 patent/WO2020234681A1/ja not_active Ceased
- 2020-05-07 CN CN202080036049.6A patent/CN113826103A/zh active Pending
- 2020-05-07 KR KR1020217039652A patent/KR20220008291A/ko active Pending
-
2024
- 2024-04-24 JP JP2024070487A patent/JP7661571B2/ja active Active
-
2025
- 2025-04-02 JP JP2025061121A patent/JP7819385B2/ja active Active
- 2025-10-21 US US19/363,739 patent/US20260044725A1/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001052101A (ja) * | 1999-08-09 | 2001-02-23 | Handotai Rikougaku Kenkyu Center:Kk | 半導体演算回路及び演算装置 |
| JP2007241475A (ja) * | 2006-03-06 | 2007-09-20 | Canon Inc | 差動乗算回路及び積和演算回路 |
| JP2019003464A (ja) * | 2017-06-16 | 2019-01-10 | 株式会社半導体エネルギー研究所 | 半導体装置、演算回路及び電子機器 |
Also Published As
| Publication number | Publication date |
|---|---|
| US12475361B2 (en) | 2025-11-18 |
| JP7480133B2 (ja) | 2024-05-09 |
| JP7819385B2 (ja) | 2026-02-24 |
| KR20220008291A (ko) | 2022-01-20 |
| JP2025106366A (ja) | 2025-07-15 |
| CN113826103A (zh) | 2021-12-21 |
| US20260044725A1 (en) | 2026-02-12 |
| US20220237440A1 (en) | 2022-07-28 |
| JP2024091895A (ja) | 2024-07-05 |
| WO2020234681A1 (ja) | 2020-11-26 |
| JP7661571B2 (ja) | 2025-04-14 |
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