JP7480133B2 - 半導体装置、及び電子機器 - Google Patents

半導体装置、及び電子機器 Download PDF

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JP7480133B2
JP7480133B2 JP2021520482A JP2021520482A JP7480133B2 JP 7480133 B2 JP7480133 B2 JP 7480133B2 JP 2021520482 A JP2021520482 A JP 2021520482A JP 2021520482 A JP2021520482 A JP 2021520482A JP 7480133 B2 JP7480133 B2 JP 7480133B2
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wiring
circuit
terminal
switch
potential
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JPWO2020234681A5 (https=
JPWO2020234681A1 (https=
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肇 木村
宗広 上妻
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06N—COMPUTING ARRANGEMENTS BASED ON SPECIFIC COMPUTATIONAL MODELS
    • G06N3/00—Computing arrangements based on biological models
    • G06N3/02—Neural networks
    • G06N3/06—Physical realisation, i.e. hardware implementation of neural networks, neurons or parts of neurons
    • G06N3/063—Physical realisation, i.e. hardware implementation of neural networks, neurons or parts of neurons using electronic means
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06G—ANALOGUE COMPUTERS
    • G06G7/00—Devices in which the computing operation is performed by varying electric or magnetic quantities
    • G06G7/12—Arrangements for performing computing operations, e.g. operational amplifiers specially adapted therefor
    • G06G7/16—Arrangements for performing computing operations, e.g. operational amplifiers specially adapted therefor for multiplication or division
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06G—ANALOGUE COMPUTERS
    • G06G7/00—Devices in which the computing operation is performed by varying electric or magnetic quantities
    • G06G7/12—Arrangements for performing computing operations, e.g. operational amplifiers specially adapted therefor
    • G06G7/18—Arrangements for performing computing operations, e.g. operational amplifiers specially adapted therefor for integration or differentiation; for forming integrals
    • G06G7/184—Arrangements for performing computing operations, e.g. operational amplifiers specially adapted therefor for integration or differentiation; for forming integrals using capacitive elements
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06G—ANALOGUE COMPUTERS
    • G06G7/00—Devices in which the computing operation is performed by varying electric or magnetic quantities
    • G06G7/12—Arrangements for performing computing operations, e.g. operational amplifiers specially adapted therefor
    • G06G7/19—Arrangements for performing computing operations, e.g. operational amplifiers specially adapted therefor for forming integrals of products, e.g. Fourier integrals, Laplace integrals or correlation integrals; for analysis or synthesis of functions using orthogonal functions
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06G—ANALOGUE COMPUTERS
    • G06G7/00—Devices in which the computing operation is performed by varying electric or magnetic quantities
    • G06G7/48—Analogue computers for specific processes, systems or devices, e.g. simulators
    • G06G7/60—Analogue computers for specific processes, systems or devices, e.g. simulators for living beings, e.g. their nervous systems ; for problems in the medical field
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/54—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using elements simulating biological cells, e.g. neuron
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/01—Manufacture or treatment
    • H10B12/09—Manufacture or treatment with simultaneous manufacture of the peripheral circuit region and memory cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/50—Peripheral circuit region structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D87/00—Integrated devices comprising both bulk components and either SOI or SOS components on the same substrate

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Theoretical Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Biomedical Technology (AREA)
  • Health & Medical Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Biophysics (AREA)
  • Computer Hardware Design (AREA)
  • Software Systems (AREA)
  • General Health & Medical Sciences (AREA)
  • Neurology (AREA)
  • Molecular Biology (AREA)
  • Computing Systems (AREA)
  • General Engineering & Computer Science (AREA)
  • Data Mining & Analysis (AREA)
  • Evolutionary Computation (AREA)
  • Artificial Intelligence (AREA)
  • Computational Linguistics (AREA)
  • Manufacturing & Machinery (AREA)
  • Neurosurgery (AREA)
  • Physiology (AREA)
  • Power Engineering (AREA)
  • Thin Film Transistor (AREA)
  • Computational Mathematics (AREA)
  • Mathematical Analysis (AREA)
  • Mathematical Optimization (AREA)
  • Pure & Applied Mathematics (AREA)
  • Semiconductor Integrated Circuits (AREA)
JP2021520482A 2019-05-17 2020-05-07 半導体装置、及び電子機器 Active JP7480133B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2024070487A JP7661571B2 (ja) 2019-05-17 2024-04-24 半導体装置および電子機器
JP2025061121A JP7819385B2 (ja) 2019-05-17 2025-04-02 半導体装置および電子機器

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2019093998 2019-05-17
JP2019093998 2019-05-17
PCT/IB2020/054307 WO2020234681A1 (ja) 2019-05-17 2020-05-07 半導体装置、及び電子機器

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JPWO2020234681A1 JPWO2020234681A1 (https=) 2020-11-26
JPWO2020234681A5 JPWO2020234681A5 (https=) 2023-04-26
JP7480133B2 true JP7480133B2 (ja) 2024-05-09

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JP2024070487A Active JP7661571B2 (ja) 2019-05-17 2024-04-24 半導体装置および電子機器
JP2025061121A Active JP7819385B2 (ja) 2019-05-17 2025-04-02 半導体装置および電子機器

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US (2) US12475361B2 (https=)
JP (3) JP7480133B2 (https=)
KR (1) KR20220008291A (https=)
CN (1) CN113826103A (https=)
WO (1) WO2020234681A1 (https=)

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KR20230047117A (ko) * 2020-08-03 2023-04-06 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
US20220374161A1 (en) * 2021-05-19 2022-11-24 Silicon Storage Technology, Inc. Output circuit for analog neural memory in a deep learning artificial neural network
US20230297335A1 (en) * 2022-03-15 2023-09-21 Qualcomm Incorporated Hybrid Compute-in-Memory

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US12475361B2 (en) 2025-11-18
JP7819385B2 (ja) 2026-02-24
JPWO2020234681A1 (https=) 2020-11-26
KR20220008291A (ko) 2022-01-20
JP2025106366A (ja) 2025-07-15
CN113826103A (zh) 2021-12-21
US20260044725A1 (en) 2026-02-12
US20220237440A1 (en) 2022-07-28
JP2024091895A (ja) 2024-07-05
WO2020234681A1 (ja) 2020-11-26
JP7661571B2 (ja) 2025-04-14

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