KR20220008291A - 반도체 장치 및 전자 기기 - Google Patents

반도체 장치 및 전자 기기 Download PDF

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KR20220008291A
KR20220008291A KR1020217039652A KR20217039652A KR20220008291A KR 20220008291 A KR20220008291 A KR 20220008291A KR 1020217039652 A KR1020217039652 A KR 1020217039652A KR 20217039652 A KR20217039652 A KR 20217039652A KR 20220008291 A KR20220008291 A KR 20220008291A
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circuit
switch
terminal
wiring
potential
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하지메 기무라
무네히로 고즈마
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가부시키가이샤 한도오따이 에네루기 켄큐쇼
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    • GPHYSICS
    • G06COMPUTING OR CALCULATING; COUNTING
    • G06NCOMPUTING ARRANGEMENTS BASED ON SPECIFIC COMPUTATIONAL MODELS
    • G06N3/00Computing arrangements based on biological models
    • G06N3/02Neural networks
    • G06N3/06Physical realisation, i.e. hardware implementation of neural networks, neurons or parts of neurons
    • G06N3/063Physical realisation, i.e. hardware implementation of neural networks, neurons or parts of neurons using electronic means
    • GPHYSICS
    • G06COMPUTING OR CALCULATING; COUNTING
    • G06GANALOGUE COMPUTERS
    • G06G7/00Devices in which the computing operation is performed by varying electric or magnetic quantities
    • G06G7/12Arrangements for performing computing operations, e.g. operational amplifiers specially adapted therefor
    • G06G7/16Arrangements for performing computing operations, e.g. operational amplifiers specially adapted therefor for multiplication or division
    • GPHYSICS
    • G06COMPUTING OR CALCULATING; COUNTING
    • G06GANALOGUE COMPUTERS
    • G06G7/00Devices in which the computing operation is performed by varying electric or magnetic quantities
    • G06G7/12Arrangements for performing computing operations, e.g. operational amplifiers specially adapted therefor
    • G06G7/18Arrangements for performing computing operations, e.g. operational amplifiers specially adapted therefor for integration or differentiation; for forming integrals
    • G06G7/184Arrangements for performing computing operations, e.g. operational amplifiers specially adapted therefor for integration or differentiation; for forming integrals using capacitive elements
    • GPHYSICS
    • G06COMPUTING OR CALCULATING; COUNTING
    • G06GANALOGUE COMPUTERS
    • G06G7/00Devices in which the computing operation is performed by varying electric or magnetic quantities
    • G06G7/12Arrangements for performing computing operations, e.g. operational amplifiers specially adapted therefor
    • G06G7/19Arrangements for performing computing operations, e.g. operational amplifiers specially adapted therefor for forming integrals of products, e.g. Fourier integrals, Laplace integrals or correlation integrals; for analysis or synthesis of functions using orthogonal functions
    • GPHYSICS
    • G06COMPUTING OR CALCULATING; COUNTING
    • G06GANALOGUE COMPUTERS
    • G06G7/00Devices in which the computing operation is performed by varying electric or magnetic quantities
    • G06G7/48Analogue computers for specific processes, systems or devices, e.g. simulators
    • G06G7/60Analogue computers for specific processes, systems or devices, e.g. simulators for living beings, e.g. their nervous systems ; for problems in the medical field
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C11/00Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/54Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using elements simulating biological cells, e.g. neuron
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10BELECTRONIC MEMORY DEVICES
    • H10B12/00Dynamic random access memory [DRAM] devices
    • H10B12/01Manufacture or treatment
    • H10B12/09Manufacture or treatment with simultaneous manufacture of the peripheral circuit region and memory cells
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00Field-effect transistors [FET]
    • H10D30/60Insulated-gate field-effect transistors [IGFET]
    • H10D30/67Thin-film transistors [TFT]
    • H10D30/674Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10BELECTRONIC MEMORY DEVICES
    • H10B12/00Dynamic random access memory [DRAM] devices
    • H10B12/50Peripheral circuit region structures
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D87/00Integrated devices comprising both bulk components and either SOI or SOS components on the same substrate

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Theoretical Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Biomedical Technology (AREA)
  • Health & Medical Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Biophysics (AREA)
  • Computer Hardware Design (AREA)
  • Software Systems (AREA)
  • General Health & Medical Sciences (AREA)
  • Neurology (AREA)
  • Molecular Biology (AREA)
  • Computing Systems (AREA)
  • General Engineering & Computer Science (AREA)
  • Data Mining & Analysis (AREA)
  • Evolutionary Computation (AREA)
  • Artificial Intelligence (AREA)
  • Computational Linguistics (AREA)
  • Manufacturing & Machinery (AREA)
  • Neurosurgery (AREA)
  • Physiology (AREA)
  • Power Engineering (AREA)
  • Thin Film Transistor (AREA)
  • Computational Mathematics (AREA)
  • Mathematical Analysis (AREA)
  • Mathematical Optimization (AREA)
  • Pure & Applied Mathematics (AREA)
  • Semiconductor Integrated Circuits (AREA)
KR1020217039652A 2019-05-17 2020-05-07 반도체 장치 및 전자 기기 Pending KR20220008291A (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2019093998 2019-05-17
JPJP-P-2019-093998 2019-05-17
PCT/IB2020/054307 WO2020234681A1 (ja) 2019-05-17 2020-05-07 半導体装置、及び電子機器

Publications (1)

Publication Number Publication Date
KR20220008291A true KR20220008291A (ko) 2022-01-20

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KR1020217039652A Pending KR20220008291A (ko) 2019-05-17 2020-05-07 반도체 장치 및 전자 기기

Country Status (5)

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US (2) US12475361B2 (https=)
JP (3) JP7480133B2 (https=)
KR (1) KR20220008291A (https=)
CN (1) CN113826103A (https=)
WO (1) WO2020234681A1 (https=)

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KR20230047117A (ko) * 2020-08-03 2023-04-06 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
US20220374161A1 (en) * 2021-05-19 2022-11-24 Silicon Storage Technology, Inc. Output circuit for analog neural memory in a deep learning artificial neural network
US20230297335A1 (en) * 2022-03-15 2023-09-21 Qualcomm Incorporated Hybrid Compute-in-Memory

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US12475361B2 (en) 2025-11-18
JP7480133B2 (ja) 2024-05-09
JP7819385B2 (ja) 2026-02-24
JPWO2020234681A1 (https=) 2020-11-26
JP2025106366A (ja) 2025-07-15
CN113826103A (zh) 2021-12-21
US20260044725A1 (en) 2026-02-12
US20220237440A1 (en) 2022-07-28
JP2024091895A (ja) 2024-07-05
WO2020234681A1 (ja) 2020-11-26
JP7661571B2 (ja) 2025-04-14

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