JPWO2020165685A1 - - Google Patents
Info
- Publication number
- JPWO2020165685A1 JPWO2020165685A1 JP2020571923A JP2020571923A JPWO2020165685A1 JP WO2020165685 A1 JPWO2020165685 A1 JP WO2020165685A1 JP 2020571923 A JP2020571923 A JP 2020571923A JP 2020571923 A JP2020571923 A JP 2020571923A JP WO2020165685 A1 JPWO2020165685 A1 JP WO2020165685A1
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
- G11C7/1006—Data managing, e.g. manipulating data before writing or reading out, data bus switches or control circuits therefor
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- G—PHYSICS
- G06—COMPUTING OR CALCULATING; COUNTING
- G06N—COMPUTING ARRANGEMENTS BASED ON SPECIFIC COMPUTATIONAL MODELS
- G06N3/00—Computing arrangements based on biological models
- G06N3/02—Neural networks
- G06N3/06—Physical realisation, i.e. hardware implementation of neural networks, neurons or parts of neurons
- G06N3/063—Physical realisation, i.e. hardware implementation of neural networks, neurons or parts of neurons using electronic means
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C5/00—Details of stores covered by group G11C11/00
- G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
- G11C5/147—Voltage reference generators, voltage or current regulators; Internally lowered supply levels; Compensation for voltage drops
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- G—PHYSICS
- G06—COMPUTING OR CALCULATING; COUNTING
- G06N—COMPUTING ARRANGEMENTS BASED ON SPECIFIC COMPUTATIONAL MODELS
- G06N3/00—Computing arrangements based on biological models
- G06N3/02—Neural networks
- G06N3/04—Architecture, e.g. interconnection topology
-
- G—PHYSICS
- G06—COMPUTING OR CALCULATING; COUNTING
- G06N—COMPUTING ARRANGEMENTS BASED ON SPECIFIC COMPUTATIONAL MODELS
- G06N3/00—Computing arrangements based on biological models
- G06N3/02—Neural networks
- G06N3/04—Architecture, e.g. interconnection topology
- G06N3/048—Activation functions
-
- G—PHYSICS
- G06—COMPUTING OR CALCULATING; COUNTING
- G06N—COMPUTING ARRANGEMENTS BASED ON SPECIFIC COMPUTATIONAL MODELS
- G06N3/00—Computing arrangements based on biological models
- G06N3/02—Neural networks
- G06N3/04—Architecture, e.g. interconnection topology
- G06N3/0499—Feedforward networks
-
- G—PHYSICS
- G06—COMPUTING OR CALCULATING; COUNTING
- G06N—COMPUTING ARRANGEMENTS BASED ON SPECIFIC COMPUTATIONAL MODELS
- G06N3/00—Computing arrangements based on biological models
- G06N3/02—Neural networks
- G06N3/06—Physical realisation, i.e. hardware implementation of neural networks, neurons or parts of neurons
- G06N3/063—Physical realisation, i.e. hardware implementation of neural networks, neurons or parts of neurons using electronic means
- G06N3/065—Analogue means
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
- G11C11/413—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction
- G11C11/417—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction for memory cells of the field-effect type
- G11C11/419—Read-write [R-W] circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/54—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using elements simulating biological cells, e.g. neuron
-
- G—PHYSICS
- G06—COMPUTING OR CALCULATING; COUNTING
- G06N—COMPUTING ARRANGEMENTS BASED ON SPECIFIC COMPUTATIONAL MODELS
- G06N3/00—Computing arrangements based on biological models
- G06N3/02—Neural networks
- G06N3/08—Learning methods
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/403—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh
- G11C11/405—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh with three charge-transfer gates, e.g. MOS transistors, per cell
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
- G11C11/412—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using field-effect transistors only
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Theoretical Computer Science (AREA)
- Health & Medical Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Biomedical Technology (AREA)
- Biophysics (AREA)
- General Health & Medical Sciences (AREA)
- Molecular Biology (AREA)
- General Engineering & Computer Science (AREA)
- Evolutionary Computation (AREA)
- Data Mining & Analysis (AREA)
- Computational Linguistics (AREA)
- Computing Systems (AREA)
- Artificial Intelligence (AREA)
- General Physics & Mathematics (AREA)
- Mathematical Physics (AREA)
- Software Systems (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Neurology (AREA)
- Power Engineering (AREA)
- Control Of Indicators Other Than Cathode Ray Tubes (AREA)
- Logic Circuits (AREA)
- Semiconductor Memories (AREA)
- Thin Film Transistor (AREA)
- Dram (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Control Of El Displays (AREA)
- Semiconductor Integrated Circuits (AREA)
- Memory System (AREA)
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2024024504A JP7671888B2 (ja) | 2019-02-15 | 2024-02-21 | 半導体装置 |
| JP2025069552A JP2025119617A (ja) | 2019-02-15 | 2025-04-21 | 半導体装置 |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2019025723 | 2019-02-15 | ||
| JP2019025723 | 2019-02-15 | ||
| PCT/IB2020/050821 WO2020165685A1 (ja) | 2019-02-15 | 2020-02-03 | 半導体装置、及び電子機器 |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2024024504A Division JP7671888B2 (ja) | 2019-02-15 | 2024-02-21 | 半導体装置 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JPWO2020165685A1 true JPWO2020165685A1 (https=) | 2020-08-20 |
| JPWO2020165685A5 JPWO2020165685A5 (https=) | 2023-01-26 |
| JP7443263B2 JP7443263B2 (ja) | 2024-03-05 |
Family
ID=72044717
Family Applications (3)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2020571923A Active JP7443263B2 (ja) | 2019-02-15 | 2020-02-03 | 半導体装置 |
| JP2024024504A Active JP7671888B2 (ja) | 2019-02-15 | 2024-02-21 | 半導体装置 |
| JP2025069552A Pending JP2025119617A (ja) | 2019-02-15 | 2025-04-21 | 半導体装置 |
Family Applications After (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2024024504A Active JP7671888B2 (ja) | 2019-02-15 | 2024-02-21 | 半導体装置 |
| JP2025069552A Pending JP2025119617A (ja) | 2019-02-15 | 2025-04-21 | 半導体装置 |
Country Status (7)
| Country | Link |
|---|---|
| US (3) | US11776586B2 (https=) |
| JP (3) | JP7443263B2 (https=) |
| KR (1) | KR20210125004A (https=) |
| CN (1) | CN113383342A (https=) |
| DE (1) | DE112020000823T5 (https=) |
| TW (2) | TWI846810B (https=) |
| WO (1) | WO2020165685A1 (https=) |
Families Citing this family (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI846810B (zh) | 2019-02-15 | 2024-07-01 | 日商半導體能源研究所股份有限公司 | 半導體裝置及電子裝置 |
| US11430846B2 (en) * | 2019-03-19 | 2022-08-30 | Innolux Corporation | Display module with transistor |
| JP2020160887A (ja) * | 2019-03-27 | 2020-10-01 | ソニー株式会社 | 演算装置及び積和演算システム |
| WO2020234681A1 (ja) | 2019-05-17 | 2020-11-26 | 株式会社半導体エネルギー研究所 | 半導体装置、及び電子機器 |
| KR20230039668A (ko) | 2020-07-17 | 2023-03-21 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 전자 기기 |
| US12371791B2 (en) | 2021-01-15 | 2025-07-29 | Taiwan Semiconductor Manufacturing Co., Ltd. | System and method for dynamically adjusting thin-film deposition parameters |
| US12293281B2 (en) * | 2021-04-09 | 2025-05-06 | International Business Machines Corporation | Training DNN by updating an array using a chopper |
| US12481867B2 (en) * | 2021-04-28 | 2025-11-25 | Arm Limited | Memory for artificial neural network accelerator |
| WO2025153927A1 (ja) * | 2024-01-17 | 2025-07-24 | 株式会社半導体エネルギー研究所 | 記憶回路、記憶装置及び電子機器 |
| WO2026033397A1 (ja) * | 2024-08-08 | 2026-02-12 | 株式会社半導体エネルギー研究所 | 半導体装置 |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0467259A (ja) * | 1990-07-09 | 1992-03-03 | Hitachi Ltd | 情報処理装置 |
| JP2006030946A (ja) * | 2004-06-14 | 2006-02-02 | Sharp Corp | 表示装置 |
| JP2019003464A (ja) * | 2017-06-16 | 2019-01-10 | 株式会社半導体エネルギー研究所 | 半導体装置、演算回路及び電子機器 |
Family Cites Families (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3260357B2 (ja) | 1990-01-24 | 2002-02-25 | 株式会社日立製作所 | 情報処理装置 |
| JP3353786B2 (ja) | 1990-01-24 | 2002-12-03 | 株式会社日立製作所 | 情報処理装置 |
| US8127075B2 (en) | 2007-07-20 | 2012-02-28 | Seagate Technology Llc | Non-linear stochastic processing storage device |
| KR20230098374A (ko) * | 2011-10-18 | 2023-07-03 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 발광 장치 |
| US9934826B2 (en) * | 2016-04-14 | 2018-04-03 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| US11556771B2 (en) | 2017-04-10 | 2023-01-17 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor neural network device including a synapse circuit comprising memory cells and an activation function circuit |
| US11568223B2 (en) | 2017-04-14 | 2023-01-31 | Semiconductor Energy Laboratory Co., Ltd. | Neural network circuit |
| WO2018211349A1 (ja) | 2017-05-19 | 2018-11-22 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| JP2019168851A (ja) * | 2018-03-22 | 2019-10-03 | 東芝メモリ株式会社 | 演算装置及び演算方法 |
| US12118333B2 (en) * | 2018-04-26 | 2024-10-15 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| WO2019239245A1 (ja) | 2018-06-15 | 2019-12-19 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| KR20250173579A (ko) | 2018-10-19 | 2025-12-10 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 전자 기기 |
| WO2020095140A1 (ja) | 2018-11-08 | 2020-05-14 | 株式会社半導体エネルギー研究所 | 半導体装置、及び電子機器 |
| TWI846810B (zh) | 2019-02-15 | 2024-07-01 | 日商半導體能源研究所股份有限公司 | 半導體裝置及電子裝置 |
-
2020
- 2020-01-31 TW TW109103086A patent/TWI846810B/zh active
- 2020-01-31 TW TW113120471A patent/TWI906891B/zh active
- 2020-02-03 WO PCT/IB2020/050821 patent/WO2020165685A1/ja not_active Ceased
- 2020-02-03 DE DE112020000823.1T patent/DE112020000823T5/de active Pending
- 2020-02-03 CN CN202080011459.5A patent/CN113383342A/zh active Pending
- 2020-02-03 US US17/427,697 patent/US11776586B2/en active Active
- 2020-02-03 JP JP2020571923A patent/JP7443263B2/ja active Active
- 2020-02-03 KR KR1020217026023A patent/KR20210125004A/ko active Pending
-
2023
- 2023-10-02 US US18/375,573 patent/US12518800B2/en active Active
-
2024
- 2024-02-21 JP JP2024024504A patent/JP7671888B2/ja active Active
-
2025
- 2025-04-21 JP JP2025069552A patent/JP2025119617A/ja active Pending
- 2025-12-01 US US19/405,070 patent/US20260088064A1/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0467259A (ja) * | 1990-07-09 | 1992-03-03 | Hitachi Ltd | 情報処理装置 |
| JP2006030946A (ja) * | 2004-06-14 | 2006-02-02 | Sharp Corp | 表示装置 |
| JP2019003464A (ja) * | 2017-06-16 | 2019-01-10 | 株式会社半導体エネルギー研究所 | 半導体装置、演算回路及び電子機器 |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2024061728A (ja) | 2024-05-08 |
| TW202032407A (zh) | 2020-09-01 |
| JP7671888B2 (ja) | 2025-05-02 |
| JP7443263B2 (ja) | 2024-03-05 |
| US12518800B2 (en) | 2026-01-06 |
| DE112020000823T5 (de) | 2021-11-04 |
| KR20210125004A (ko) | 2021-10-15 |
| US20240046967A1 (en) | 2024-02-08 |
| TWI846810B (zh) | 2024-07-01 |
| WO2020165685A1 (ja) | 2020-08-20 |
| US20260088064A1 (en) | 2026-03-26 |
| JP2025119617A (ja) | 2025-08-14 |
| US11776586B2 (en) | 2023-10-03 |
| US20220165311A1 (en) | 2022-05-26 |
| CN113383342A (zh) | 2021-09-10 |
| TWI906891B (zh) | 2025-12-01 |
| TW202509920A (zh) | 2025-03-01 |
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