JPWO2020230877A5 - - Google Patents

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JPWO2020230877A5
JPWO2020230877A5 JP2021519497A JP2021519497A JPWO2020230877A5 JP WO2020230877 A5 JPWO2020230877 A5 JP WO2020230877A5 JP 2021519497 A JP2021519497 A JP 2021519497A JP 2021519497 A JP2021519497 A JP 2021519497A JP WO2020230877 A5 JPWO2020230877 A5 JP WO2020230877A5
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ferromagnetic layer
magnetization
magnetization region
conductive portion
area
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JP2021519497A
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Japanese (ja)
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JP7173311B2 (ja
JPWO2020230877A1 (https=
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Priority claimed from PCT/JP2020/019387 external-priority patent/WO2020230877A1/ja
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JP2021519497A 2019-05-15 2020-05-15 磁壁移動素子、磁気記録アレイ及び半導体装置 Active JP7173311B2 (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JP2019092181 2019-05-15
JP2019092181 2019-05-15
JP2020061064 2020-03-30
JP2020061064 2020-03-30
PCT/JP2020/019387 WO2020230877A1 (ja) 2019-05-15 2020-05-15 磁壁移動素子、磁気記録アレイ及び半導体装置

Publications (3)

Publication Number Publication Date
JPWO2020230877A1 JPWO2020230877A1 (https=) 2020-11-19
JPWO2020230877A5 true JPWO2020230877A5 (https=) 2022-01-18
JP7173311B2 JP7173311B2 (ja) 2022-11-16

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JP2021519497A Active JP7173311B2 (ja) 2019-05-15 2020-05-15 磁壁移動素子、磁気記録アレイ及び半導体装置

Country Status (4)

Country Link
US (1) US11790967B2 (https=)
JP (1) JP7173311B2 (https=)
CN (1) CN113366662B (https=)
WO (1) WO2020230877A1 (https=)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2022003957A1 (ja) * 2020-07-03 2022-01-06 Tdk株式会社 集積装置及びニューロモーフィックデバイス
WO2022070378A1 (ja) * 2020-10-01 2022-04-07 Tdk株式会社 磁壁移動素子および磁気アレイ
CN116569676A (zh) * 2021-03-02 2023-08-08 Tdk株式会社 磁畴壁移动元件、磁阵列和磁畴壁移动元件的制造方法
US12369498B2 (en) 2022-08-30 2025-07-22 Tdk Corporation Magnetic domain wall moving element and magnetic array
US12477953B2 (en) 2024-01-30 2025-11-18 Tdk Corporation Domain wall movement element, magnetoresistive element, and magnetic array
WO2025163735A1 (ja) * 2024-01-30 2025-08-07 Tdk株式会社 磁壁移動素子及び磁気アレイ

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8331140B2 (en) 2004-01-15 2012-12-11 Japan Science And Technology Agency Current injection magnetic domain wall moving element
JP2006303159A (ja) * 2005-04-20 2006-11-02 Fuji Electric Holdings Co Ltd スピン注入磁区移動素子およびこれを用いた装置
JP5598697B2 (ja) * 2007-06-25 2014-10-01 日本電気株式会社 磁気抵抗効果素子、および磁気ランダムアクセスメモリ
WO2009122990A1 (ja) * 2008-04-02 2009-10-08 日本電気株式会社 磁気抵抗効果素子及び磁気ランダムアクセスメモリ
WO2010053039A1 (ja) 2008-11-07 2010-05-14 日本電気株式会社 磁性記憶素子の初期化方法
JP2010219104A (ja) 2009-03-13 2010-09-30 Nec Corp 磁気メモリ素子、磁気メモリ、及びその製造方法
JP2010219156A (ja) 2009-03-13 2010-09-30 Nec Corp 磁壁移動素子、及び、磁気ランダムアクセスメモリ
WO2011052475A1 (ja) * 2009-10-26 2011-05-05 日本電気株式会社 磁気メモリ素子、磁気メモリ、及びその初期化方法
JP5652472B2 (ja) 2010-03-23 2015-01-14 日本電気株式会社 磁気メモリ素子、磁気メモリ、及びその製造方法
JP5794892B2 (ja) * 2010-11-26 2015-10-14 ルネサスエレクトロニクス株式会社 磁気メモリ
WO2012127722A1 (ja) * 2011-03-22 2012-09-27 ルネサスエレクトロニクス株式会社 磁気メモリ
JP6191941B2 (ja) * 2013-01-24 2017-09-06 日本電気株式会社 磁気メモリセル及び磁気ランダムアクセスメモリ
CN105280806A (zh) * 2015-09-14 2016-01-27 华中科技大学 一种存储装置及其存储方法
US10672446B2 (en) * 2016-06-10 2020-06-02 Tdk Corporation Exchange bias utilization type magnetization rotational element, exchange bias utilization type magnetoresistance effect element, exchange bias utilization type magnetic memory, non-volatile logic circuit, and magnetic neuron element
JP6743641B2 (ja) * 2016-10-18 2020-08-19 Tdk株式会社 磁場変調機構、磁場変調素子、アナログメモリ素子、及び、高周波フィルタ
CN109643690B (zh) * 2017-04-14 2023-08-29 Tdk株式会社 磁壁利用型模拟存储元件、磁壁利用型模拟存储器、非易失性逻辑电路及磁神经元件
JP6555404B1 (ja) * 2018-08-02 2019-08-07 Tdk株式会社 磁壁移動型磁気記録素子及び磁気記録アレイ
JP6499798B1 (ja) 2018-09-28 2019-04-10 Tdk株式会社 磁気記録アレイ

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