JPWO2020230877A1 - - Google Patents
Info
- Publication number
- JPWO2020230877A1 JPWO2020230877A1 JP2021519497A JP2021519497A JPWO2020230877A1 JP WO2020230877 A1 JPWO2020230877 A1 JP WO2020230877A1 JP 2021519497 A JP2021519497 A JP 2021519497A JP 2021519497 A JP2021519497 A JP 2021519497A JP WO2020230877 A1 JPWO2020230877 A1 JP WO2020230877A1
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
- G11C11/161—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
- G11C11/165—Auxiliary circuits
- G11C11/1675—Writing or programming circuits or methods
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
- H10B61/20—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having three or more electrodes, e.g. transistors
- H10B61/22—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having three or more electrodes, e.g. transistors of the field-effect transistor [FET] type
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
- H10D48/40—Devices controlled by magnetic fields
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N50/00—Galvanomagnetic devices
- H10N50/10—Magnetoresistive devices
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/14—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements
- G11C11/15—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements using multiple magnetic layers
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Hall/Mr Elements (AREA)
- Mram Or Spin Memory Techniques (AREA)
Applications Claiming Priority (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2019092181 | 2019-05-15 | ||
| JP2019092181 | 2019-05-15 | ||
| JP2020061064 | 2020-03-30 | ||
| JP2020061064 | 2020-03-30 | ||
| PCT/JP2020/019387 WO2020230877A1 (ja) | 2019-05-15 | 2020-05-15 | 磁壁移動素子、磁気記録アレイ及び半導体装置 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JPWO2020230877A1 true JPWO2020230877A1 (https=) | 2020-11-19 |
| JPWO2020230877A5 JPWO2020230877A5 (https=) | 2022-01-18 |
| JP7173311B2 JP7173311B2 (ja) | 2022-11-16 |
Family
ID=73289439
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2021519497A Active JP7173311B2 (ja) | 2019-05-15 | 2020-05-15 | 磁壁移動素子、磁気記録アレイ及び半導体装置 |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US11790967B2 (https=) |
| JP (1) | JP7173311B2 (https=) |
| CN (1) | CN113366662B (https=) |
| WO (1) | WO2020230877A1 (https=) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2022003957A1 (ja) * | 2020-07-03 | 2022-01-06 | Tdk株式会社 | 集積装置及びニューロモーフィックデバイス |
| WO2022070378A1 (ja) | 2020-10-01 | 2022-04-07 | Tdk株式会社 | 磁壁移動素子および磁気アレイ |
| US20240237547A9 (en) * | 2021-03-02 | 2024-07-11 | Tdk Corporation | Domain wall displacement element, magnetic array, and method of manufacturing domain wall displacement element |
| US12369498B2 (en) | 2022-08-30 | 2025-07-22 | Tdk Corporation | Magnetic domain wall moving element and magnetic array |
| US12477953B2 (en) | 2024-01-30 | 2025-11-18 | Tdk Corporation | Domain wall movement element, magnetoresistive element, and magnetic array |
| WO2025163735A1 (ja) * | 2024-01-30 | 2025-08-07 | Tdk株式会社 | 磁壁移動素子及び磁気アレイ |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2005069368A1 (ja) * | 2004-01-15 | 2005-07-28 | Japan Science And Technology Agency | 電流注入磁壁移動素子 |
| JP2006303159A (ja) * | 2005-04-20 | 2006-11-02 | Fuji Electric Holdings Co Ltd | スピン注入磁区移動素子およびこれを用いた装置 |
| WO2009122990A1 (ja) * | 2008-04-02 | 2009-10-08 | 日本電気株式会社 | 磁気抵抗効果素子及び磁気ランダムアクセスメモリ |
| JP2010219156A (ja) * | 2009-03-13 | 2010-09-30 | Nec Corp | 磁壁移動素子、及び、磁気ランダムアクセスメモリ |
| WO2011118395A1 (ja) * | 2010-03-23 | 2011-09-29 | 日本電気株式会社 | 磁気メモリ素子、磁気メモリ、及びその製造方法 |
| JP6499798B1 (ja) * | 2018-09-28 | 2019-04-10 | Tdk株式会社 | 磁気記録アレイ |
Family Cites Families (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101689600B (zh) * | 2007-06-25 | 2012-12-26 | 日本电气株式会社 | 磁阻效应元件及磁性随机存取存储器 |
| JP5397384B2 (ja) | 2008-11-07 | 2014-01-22 | 日本電気株式会社 | 磁性記憶素子の初期化方法 |
| JP2010219104A (ja) | 2009-03-13 | 2010-09-30 | Nec Corp | 磁気メモリ素子、磁気メモリ、及びその製造方法 |
| WO2011052475A1 (ja) * | 2009-10-26 | 2011-05-05 | 日本電気株式会社 | 磁気メモリ素子、磁気メモリ、及びその初期化方法 |
| JP5794892B2 (ja) * | 2010-11-26 | 2015-10-14 | ルネサスエレクトロニクス株式会社 | 磁気メモリ |
| CN103460374B (zh) * | 2011-03-22 | 2016-02-10 | 瑞萨电子株式会社 | 磁存储器 |
| JP6191941B2 (ja) * | 2013-01-24 | 2017-09-06 | 日本電気株式会社 | 磁気メモリセル及び磁気ランダムアクセスメモリ |
| CN105280806A (zh) * | 2015-09-14 | 2016-01-27 | 华中科技大学 | 一种存储装置及其存储方法 |
| US10672446B2 (en) * | 2016-06-10 | 2020-06-02 | Tdk Corporation | Exchange bias utilization type magnetization rotational element, exchange bias utilization type magnetoresistance effect element, exchange bias utilization type magnetic memory, non-volatile logic circuit, and magnetic neuron element |
| JP6743641B2 (ja) * | 2016-10-18 | 2020-08-19 | Tdk株式会社 | 磁場変調機構、磁場変調素子、アナログメモリ素子、及び、高周波フィルタ |
| US10916480B2 (en) * | 2017-04-14 | 2021-02-09 | Tdk Corporation | Magnetic wall utilization type analog memory device, magnetic wall utilization type analog memory, nonvolatile logic circuit, and magnetic neuro device |
| JP6555404B1 (ja) * | 2018-08-02 | 2019-08-07 | Tdk株式会社 | 磁壁移動型磁気記録素子及び磁気記録アレイ |
-
2020
- 2020-05-15 US US17/420,053 patent/US11790967B2/en active Active
- 2020-05-15 WO PCT/JP2020/019387 patent/WO2020230877A1/ja not_active Ceased
- 2020-05-15 CN CN202080010360.3A patent/CN113366662B/zh active Active
- 2020-05-15 JP JP2021519497A patent/JP7173311B2/ja active Active
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2005069368A1 (ja) * | 2004-01-15 | 2005-07-28 | Japan Science And Technology Agency | 電流注入磁壁移動素子 |
| JP2006303159A (ja) * | 2005-04-20 | 2006-11-02 | Fuji Electric Holdings Co Ltd | スピン注入磁区移動素子およびこれを用いた装置 |
| WO2009122990A1 (ja) * | 2008-04-02 | 2009-10-08 | 日本電気株式会社 | 磁気抵抗効果素子及び磁気ランダムアクセスメモリ |
| JP2010219156A (ja) * | 2009-03-13 | 2010-09-30 | Nec Corp | 磁壁移動素子、及び、磁気ランダムアクセスメモリ |
| WO2011118395A1 (ja) * | 2010-03-23 | 2011-09-29 | 日本電気株式会社 | 磁気メモリ素子、磁気メモリ、及びその製造方法 |
| JP6499798B1 (ja) * | 2018-09-28 | 2019-04-10 | Tdk株式会社 | 磁気記録アレイ |
Also Published As
| Publication number | Publication date |
|---|---|
| CN113366662B (zh) | 2023-08-29 |
| CN113366662A (zh) | 2021-09-07 |
| WO2020230877A1 (ja) | 2020-11-19 |
| JP7173311B2 (ja) | 2022-11-16 |
| US11790967B2 (en) | 2023-10-17 |
| US20220051708A1 (en) | 2022-02-17 |
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