JP7173311B2 - 磁壁移動素子、磁気記録アレイ及び半導体装置 - Google Patents

磁壁移動素子、磁気記録アレイ及び半導体装置 Download PDF

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JP7173311B2
JP7173311B2 JP2021519497A JP2021519497A JP7173311B2 JP 7173311 B2 JP7173311 B2 JP 7173311B2 JP 2021519497 A JP2021519497 A JP 2021519497A JP 2021519497 A JP2021519497 A JP 2021519497A JP 7173311 B2 JP7173311 B2 JP 7173311B2
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layer
magnetized region
domain wall
wall motion
conductive portion
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JPWO2020230877A5 (https=
JPWO2020230877A1 (https=
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章悟 山田
竜雄 柴田
優剛 石谷
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TDK Corp
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TDK Corp
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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/161—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1675—Writing or programming circuits or methods
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
    • H10B61/20—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having three or more electrodes, e.g. transistors
    • H10B61/22—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having three or more electrodes, e.g. transistors of the field-effect transistor [FET] type
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
    • H10D48/40—Devices controlled by magnetic fields
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/10—Magnetoresistive devices
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/14—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements
    • G11C11/15—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements using multiple magnetic layers

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Hall/Mr Elements (AREA)
  • Mram Or Spin Memory Techniques (AREA)
JP2021519497A 2019-05-15 2020-05-15 磁壁移動素子、磁気記録アレイ及び半導体装置 Active JP7173311B2 (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JP2019092181 2019-05-15
JP2019092181 2019-05-15
JP2020061064 2020-03-30
JP2020061064 2020-03-30
PCT/JP2020/019387 WO2020230877A1 (ja) 2019-05-15 2020-05-15 磁壁移動素子、磁気記録アレイ及び半導体装置

Publications (3)

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JPWO2020230877A1 JPWO2020230877A1 (https=) 2020-11-19
JPWO2020230877A5 JPWO2020230877A5 (https=) 2022-01-18
JP7173311B2 true JP7173311B2 (ja) 2022-11-16

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US (1) US11790967B2 (https=)
JP (1) JP7173311B2 (https=)
CN (1) CN113366662B (https=)
WO (1) WO2020230877A1 (https=)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2022003957A1 (ja) * 2020-07-03 2022-01-06 Tdk株式会社 集積装置及びニューロモーフィックデバイス
WO2022070378A1 (ja) 2020-10-01 2022-04-07 Tdk株式会社 磁壁移動素子および磁気アレイ
US20240237547A9 (en) * 2021-03-02 2024-07-11 Tdk Corporation Domain wall displacement element, magnetic array, and method of manufacturing domain wall displacement element
US12369498B2 (en) 2022-08-30 2025-07-22 Tdk Corporation Magnetic domain wall moving element and magnetic array
US12477953B2 (en) 2024-01-30 2025-11-18 Tdk Corporation Domain wall movement element, magnetoresistive element, and magnetic array
WO2025163735A1 (ja) * 2024-01-30 2025-08-07 Tdk株式会社 磁壁移動素子及び磁気アレイ

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2005069368A1 (ja) 2004-01-15 2005-07-28 Japan Science And Technology Agency 電流注入磁壁移動素子
JP2006303159A (ja) 2005-04-20 2006-11-02 Fuji Electric Holdings Co Ltd スピン注入磁区移動素子およびこれを用いた装置
WO2009122990A1 (ja) 2008-04-02 2009-10-08 日本電気株式会社 磁気抵抗効果素子及び磁気ランダムアクセスメモリ
JP2010219156A (ja) 2009-03-13 2010-09-30 Nec Corp 磁壁移動素子、及び、磁気ランダムアクセスメモリ
WO2011118395A1 (ja) 2010-03-23 2011-09-29 日本電気株式会社 磁気メモリ素子、磁気メモリ、及びその製造方法
JP6499798B1 (ja) 2018-09-28 2019-04-10 Tdk株式会社 磁気記録アレイ

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Publication number Priority date Publication date Assignee Title
CN101689600B (zh) * 2007-06-25 2012-12-26 日本电气株式会社 磁阻效应元件及磁性随机存取存储器
JP5397384B2 (ja) 2008-11-07 2014-01-22 日本電気株式会社 磁性記憶素子の初期化方法
JP2010219104A (ja) 2009-03-13 2010-09-30 Nec Corp 磁気メモリ素子、磁気メモリ、及びその製造方法
WO2011052475A1 (ja) * 2009-10-26 2011-05-05 日本電気株式会社 磁気メモリ素子、磁気メモリ、及びその初期化方法
JP5794892B2 (ja) * 2010-11-26 2015-10-14 ルネサスエレクトロニクス株式会社 磁気メモリ
CN103460374B (zh) * 2011-03-22 2016-02-10 瑞萨电子株式会社 磁存储器
JP6191941B2 (ja) * 2013-01-24 2017-09-06 日本電気株式会社 磁気メモリセル及び磁気ランダムアクセスメモリ
CN105280806A (zh) * 2015-09-14 2016-01-27 华中科技大学 一种存储装置及其存储方法
US10672446B2 (en) * 2016-06-10 2020-06-02 Tdk Corporation Exchange bias utilization type magnetization rotational element, exchange bias utilization type magnetoresistance effect element, exchange bias utilization type magnetic memory, non-volatile logic circuit, and magnetic neuron element
JP6743641B2 (ja) * 2016-10-18 2020-08-19 Tdk株式会社 磁場変調機構、磁場変調素子、アナログメモリ素子、及び、高周波フィルタ
US10916480B2 (en) * 2017-04-14 2021-02-09 Tdk Corporation Magnetic wall utilization type analog memory device, magnetic wall utilization type analog memory, nonvolatile logic circuit, and magnetic neuro device
JP6555404B1 (ja) * 2018-08-02 2019-08-07 Tdk株式会社 磁壁移動型磁気記録素子及び磁気記録アレイ

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2005069368A1 (ja) 2004-01-15 2005-07-28 Japan Science And Technology Agency 電流注入磁壁移動素子
JP2006303159A (ja) 2005-04-20 2006-11-02 Fuji Electric Holdings Co Ltd スピン注入磁区移動素子およびこれを用いた装置
WO2009122990A1 (ja) 2008-04-02 2009-10-08 日本電気株式会社 磁気抵抗効果素子及び磁気ランダムアクセスメモリ
JP2010219156A (ja) 2009-03-13 2010-09-30 Nec Corp 磁壁移動素子、及び、磁気ランダムアクセスメモリ
WO2011118395A1 (ja) 2010-03-23 2011-09-29 日本電気株式会社 磁気メモリ素子、磁気メモリ、及びその製造方法
JP6499798B1 (ja) 2018-09-28 2019-04-10 Tdk株式会社 磁気記録アレイ

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Publication number Publication date
CN113366662B (zh) 2023-08-29
CN113366662A (zh) 2021-09-07
WO2020230877A1 (ja) 2020-11-19
US11790967B2 (en) 2023-10-17
JPWO2020230877A1 (https=) 2020-11-19
US20220051708A1 (en) 2022-02-17

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