CN113366662B - 磁畴壁移动元件、磁记录阵列和半导体装置 - Google Patents

磁畴壁移动元件、磁记录阵列和半导体装置 Download PDF

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Publication number
CN113366662B
CN113366662B CN202080010360.3A CN202080010360A CN113366662B CN 113366662 B CN113366662 B CN 113366662B CN 202080010360 A CN202080010360 A CN 202080010360A CN 113366662 B CN113366662 B CN 113366662B
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layer
magnetization
magnetic
domain wall
ferromagnetic layer
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CN113366662A (zh
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山田章悟
柴田龙雄
石谷优刚
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TDK Corp
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TDK Corp
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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/161—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1675—Writing or programming circuits or methods
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
    • H10B61/20—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having three or more electrodes, e.g. transistors
    • H10B61/22—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having three or more electrodes, e.g. transistors of the field-effect transistor [FET] type
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
    • H10D48/40—Devices controlled by magnetic fields
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/10—Magnetoresistive devices
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/14—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements
    • G11C11/15—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements using multiple magnetic layers

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Hall/Mr Elements (AREA)
  • Mram Or Spin Memory Techniques (AREA)
CN202080010360.3A 2019-05-15 2020-05-15 磁畴壁移动元件、磁记录阵列和半导体装置 Active CN113366662B (zh)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JP2019092181 2019-05-15
JP2019-092181 2019-05-15
JP2020061064 2020-03-30
JP2020-061064 2020-03-30
PCT/JP2020/019387 WO2020230877A1 (ja) 2019-05-15 2020-05-15 磁壁移動素子、磁気記録アレイ及び半導体装置

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CN113366662A CN113366662A (zh) 2021-09-07
CN113366662B true CN113366662B (zh) 2023-08-29

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US (1) US11790967B2 (https=)
JP (1) JP7173311B2 (https=)
CN (1) CN113366662B (https=)
WO (1) WO2020230877A1 (https=)

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WO2022003957A1 (ja) * 2020-07-03 2022-01-06 Tdk株式会社 集積装置及びニューロモーフィックデバイス
WO2022070378A1 (ja) 2020-10-01 2022-04-07 Tdk株式会社 磁壁移動素子および磁気アレイ
US20240237547A9 (en) * 2021-03-02 2024-07-11 Tdk Corporation Domain wall displacement element, magnetic array, and method of manufacturing domain wall displacement element
US12369498B2 (en) 2022-08-30 2025-07-22 Tdk Corporation Magnetic domain wall moving element and magnetic array
US12477953B2 (en) 2024-01-30 2025-11-18 Tdk Corporation Domain wall movement element, magnetoresistive element, and magnetic array
WO2025163735A1 (ja) * 2024-01-30 2025-08-07 Tdk株式会社 磁壁移動素子及び磁気アレイ

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WO2009122990A1 (ja) * 2008-04-02 2009-10-08 日本電気株式会社 磁気抵抗効果素子及び磁気ランダムアクセスメモリ
CN101689600A (zh) * 2007-06-25 2010-03-31 日本电气株式会社 磁阻效应元件及磁性随机存取存储器
CN102479541A (zh) * 2010-11-26 2012-05-30 瑞萨电子株式会社 含有具有垂直磁各向异性膜的数据记录层的磁存储器
CN103460374A (zh) * 2011-03-22 2013-12-18 瑞萨电子株式会社 磁存储器
JP2014143302A (ja) * 2013-01-24 2014-08-07 Nec Corp 磁気メモリセル及び磁気ランダムアクセスメモリ
CN105280806A (zh) * 2015-09-14 2016-01-27 华中科技大学 一种存储装置及其存储方法
JP2018067593A (ja) * 2016-10-18 2018-04-26 Tdk株式会社 磁場変調機構、磁場変調素子、アナログメモリ素子、及び、高周波フィルタ
CN108780779A (zh) * 2016-06-10 2018-11-09 Tdk株式会社 交换偏置利用型磁化反转元件、交换偏置利用型磁阻效应元件、交换偏置利用型磁存储器、非易失性逻辑电路及磁神经元元件
CN109643690A (zh) * 2017-04-14 2019-04-16 Tdk株式会社 磁壁利用型模拟存储元件、磁壁利用型模拟存储器、非易失性逻辑电路及磁神经元件

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DE602005024917D1 (de) 2004-01-15 2011-01-05 Japan Science & Tech Agency Strominjektions-magnetdomänen-wandbewegungselement
JP2006303159A (ja) 2005-04-20 2006-11-02 Fuji Electric Holdings Co Ltd スピン注入磁区移動素子およびこれを用いた装置
JP5397384B2 (ja) 2008-11-07 2014-01-22 日本電気株式会社 磁性記憶素子の初期化方法
JP2010219156A (ja) * 2009-03-13 2010-09-30 Nec Corp 磁壁移動素子、及び、磁気ランダムアクセスメモリ
JP2010219104A (ja) 2009-03-13 2010-09-30 Nec Corp 磁気メモリ素子、磁気メモリ、及びその製造方法
WO2011052475A1 (ja) * 2009-10-26 2011-05-05 日本電気株式会社 磁気メモリ素子、磁気メモリ、及びその初期化方法
US8884388B2 (en) 2010-03-23 2014-11-11 Nec Corporation Magnetic memory element, magnetic memory and manufacturing method of magnetic memory
JP6555404B1 (ja) * 2018-08-02 2019-08-07 Tdk株式会社 磁壁移動型磁気記録素子及び磁気記録アレイ
JP6499798B1 (ja) 2018-09-28 2019-04-10 Tdk株式会社 磁気記録アレイ

Patent Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101689600A (zh) * 2007-06-25 2010-03-31 日本电气株式会社 磁阻效应元件及磁性随机存取存储器
WO2009122990A1 (ja) * 2008-04-02 2009-10-08 日本電気株式会社 磁気抵抗効果素子及び磁気ランダムアクセスメモリ
CN102479541A (zh) * 2010-11-26 2012-05-30 瑞萨电子株式会社 含有具有垂直磁各向异性膜的数据记录层的磁存储器
CN103460374A (zh) * 2011-03-22 2013-12-18 瑞萨电子株式会社 磁存储器
JP2014143302A (ja) * 2013-01-24 2014-08-07 Nec Corp 磁気メモリセル及び磁気ランダムアクセスメモリ
CN105280806A (zh) * 2015-09-14 2016-01-27 华中科技大学 一种存储装置及其存储方法
CN108780779A (zh) * 2016-06-10 2018-11-09 Tdk株式会社 交换偏置利用型磁化反转元件、交换偏置利用型磁阻效应元件、交换偏置利用型磁存储器、非易失性逻辑电路及磁神经元元件
JP2018067593A (ja) * 2016-10-18 2018-04-26 Tdk株式会社 磁場変調機構、磁場変調素子、アナログメモリ素子、及び、高周波フィルタ
CN109643690A (zh) * 2017-04-14 2019-04-16 Tdk株式会社 磁壁利用型模拟存储元件、磁壁利用型模拟存储器、非易失性逻辑电路及磁神经元件

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Publication number Publication date
CN113366662A (zh) 2021-09-07
WO2020230877A1 (ja) 2020-11-19
JP7173311B2 (ja) 2022-11-16
US11790967B2 (en) 2023-10-17
JPWO2020230877A1 (https=) 2020-11-19
US20220051708A1 (en) 2022-02-17

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