JPWO2020217355A1 - 劣化診断装置および光トランシーバの劣化診断方法 - Google Patents
劣化診断装置および光トランシーバの劣化診断方法 Download PDFInfo
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Abstract
Description
図1は、本発明の実施の形態に係る通信装置100の構成例を示すブロック図である。通信装置100は、光トランシーバ101と、劣化診断装置102と、を備える。光トランシーバ101は、光送信部103と、光受信部104と、駆動電流モニタ部109と、温度モニタ部110と、を備える。光送信部103は、図示しない後段装置からの電気送信信号を光送信信号に変換して、図示しない光ファイバに出力する。光受信部104は、図示しない光ファイバからの光受信信号を電気受信信号に変換して、図示しない後段装置に出力する。光送信部103は、レーザダイオード105と、モニタPD(PhotoDiode)106と、PD電流検出部107と、駆動電流制御部108と、を備える。
Claims (4)
- 光送信信号を出力するレーザダイオードを有する光トランシーバの温度を取得する温度取得部と、
前記レーザダイオードに流れるバイアス電流を取得するバイアス電流取得部と、
取得された前記温度と前記バイアス電流との関係を示す補正関数を算出する補正関数演算部と、
前記補正関数を用いて、劣化診断時に取得されたバイアス電流の温度補正値を算出する温度補正値算出部と、
前記温度補正値を用いて、前記劣化診断時に取得されたバイアス電流を補正する補正後バイアス電流算出部と、
前記バイアス電流の初期値である初期バイアス電流と補正された補正後バイアス電流とを比較して、前記レーザダイオードの状態を判定するバイアス電流変化量算出部と、
を備えることを特徴とする劣化診断装置。 - 前記バイアス電流変化量算出部は、前記初期バイアス電流と前記補正後バイアス電流との差分が規定された閾値以上の場合、前記光トランシーバの交換を指示する、
ことを特徴とする請求項1に記載の劣化診断装置。 - 温度取得部が、光送信信号を出力するレーザダイオードを有する光トランシーバの温度を取得する第1のステップと、
バイアス電流取得部が、前記レーザダイオードに流れるバイアス電流を取得する第2のステップと、
補正関数演算部が、取得された前記温度と前記バイアス電流との関係を示す補正関数を算出する第3のステップと、
温度補正値算出部が、前記補正関数を用いて、劣化診断時に取得されたバイアス電流の温度補正値を算出する第4のステップと、
補正後バイアス電流算出部が、前記温度補正値を用いて、前記劣化診断時に取得されたバイアス電流を補正する第5のステップと、
バイアス電流変化量算出部が、前記バイアス電流の初期値である初期バイアス電流と補正された補正後バイアス電流とを比較して、前記レーザダイオードの状態を判定する第6のステップと、
を含むことを特徴とする光トランシーバの劣化診断方法。 - 前記第6のステップにおいて、前記バイアス電流変化量算出部は、前記初期バイアス電流と前記補正後バイアス電流との差分が規定された閾値以上の場合、前記光トランシーバの交換を指示する、
ことを特徴とする請求項3に記載の光トランシーバの劣化診断方法。
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US11799562B2 (en) * | 2020-06-02 | 2023-10-24 | Hewlett Packard Enterprise Development Lp | Mitigation of temperature variations and crosstalk in silicon photonics interconnects |
CN114079502A (zh) * | 2020-08-13 | 2022-02-22 | 中兴通讯股份有限公司 | 一种光模块健康状态检测方法和检测装置 |
US20230119309A1 (en) * | 2021-10-20 | 2023-04-20 | Simmonds Precision Products, Inc. | Laser diode drive systems |
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JPS52123185A (en) * | 1976-04-09 | 1977-10-17 | Fujitsu Ltd | Optical communication supervisory system |
JPS5821886A (ja) * | 1981-07-31 | 1983-02-08 | Nec Corp | レ−ザ・ダイオ−ド劣化判定回路 |
JP2546080B2 (ja) * | 1991-05-10 | 1996-10-23 | 富士通株式会社 | 半導体レーザー制御装置 |
JPH05259548A (ja) * | 1992-03-10 | 1993-10-08 | Fujitsu Ltd | レーザダイオード電流監視回路の温度補償方法 |
JPH07147443A (ja) * | 1993-11-24 | 1995-06-06 | Matsushita Electric Ind Co Ltd | 半導体レーザ送信器 |
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JP2000041002A (ja) * | 1998-07-21 | 2000-02-08 | Nakayo Telecommun Inc | レーザ光利用装置および光無線伝送装置 |
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JP2004254240A (ja) * | 2003-02-21 | 2004-09-09 | Fujitsu Ltd | レーザダイオード管理装置およびレーザダイオード管理方法 |
JP2005145006A (ja) * | 2003-11-19 | 2005-06-09 | Kyocera Mita Corp | 露光装置、画像形成装置、寿命判定装置 |
JP4375282B2 (ja) * | 2005-05-26 | 2009-12-02 | 住友電気工業株式会社 | オートパワーコントロール回路およびレーザダイオード制御方法 |
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JP2016004597A (ja) * | 2014-06-17 | 2016-01-12 | 三菱電機株式会社 | ディスク装置 |
JP2016163106A (ja) * | 2015-02-27 | 2016-09-05 | 株式会社日立製作所 | 通信装置および保守運用システム |
WO2019171552A1 (ja) * | 2018-03-08 | 2019-09-12 | 三菱電機株式会社 | 光モジュールの寿命予測方法および寿命予測装置 |
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EP3944433A1 (en) | 2022-01-26 |
JP6704534B1 (ja) | 2020-06-03 |
EP3944433A4 (en) | 2022-04-27 |
WO2020217355A1 (ja) | 2020-10-29 |
US20210367397A1 (en) | 2021-11-25 |
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