JPWO2020079743A1 - 電力用半導体装置及びその製造方法 - Google Patents
電力用半導体装置及びその製造方法 Download PDFInfo
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- JPWO2020079743A1 JPWO2020079743A1 JP2020551624A JP2020551624A JPWO2020079743A1 JP WO2020079743 A1 JPWO2020079743 A1 JP WO2020079743A1 JP 2020551624 A JP2020551624 A JP 2020551624A JP 2020551624 A JP2020551624 A JP 2020551624A JP WO2020079743 A1 JPWO2020079743 A1 JP WO2020079743A1
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Abstract
Description
本願の上記以外の目的、特徴、観点及び効果は、図面を参照する以下の詳細な説明から、さらに明らかになるであろう。
以下に、実施の形態1による電力用半導体装置について、図面に基づいて説明する。図1(a)及び図1(b)は、実施の形態1による電力用半導体装置を示す平面図及び側面図、図2は、図1(a)中、A−Aで示す部分の断面図である。各図において、同一、相当部分には同一符号を付している。
図7及び図8は、実施の形態2による電力用半導体装置の製造方法を説明する平面図である。図7及び図8に示す電力用半導体装置1A、1Bは、上側ゲート11aと下側ゲート11bの内部に残ったモールド樹脂が切り離される前の状態を示している。なお、実施の形態2による電力用半導体装置1A、1Bは、上記実施の形態1による電力用半導体装置1の変形例であるので、各構成要素についての説明は省略し、相違点のみを説明する。
図9は、実施の形態3による電力用半導体装置を示す平面図である。図9に示す電力用半導体装置1Cは、上側ゲート11aと下側ゲート11bの内部に残ったモールド樹脂が切り離される前の状態を示している。なお、実施の形態3による電力用半導体装置1Cは、上記実施の形態1による電力用半導体装置1の変形例であるので、各構成要素についての説明は省略し、相違点のみを説明する。
Claims (14)
- 電気的に独立した複数の領域を有するリードフレームと、前記リードフレームの実装面に搭載されたスイッチング可能なパワー半導体チップと、前記パワー半導体チップと前記リードフレームとを電気的に接続する配線部材と、前記リードフレーム、前記パワー半導体チップ、及び前記配線部材を封止する樹脂パッケージとを備えた電力用半導体装置であって、
前記樹脂パッケージは、複数の側面のうち最も長い側面である長手方向側面と、前記長手方向側面に連なる短手方向側面とを有すると共に、前記短手方向側面にゲートブレイク跡を有することを特徴とする電力用半導体装置。 - 前記樹脂パッケージは、前記リードフレームの前記実装面を封止する実装面側樹脂と、前記実装面の反対側の放熱面を封止する放熱面側樹脂とを含むことを特徴とする請求項1記載の電力用半導体装置。
- 前記ゲートブレイク跡は、第1ゲートブレイク跡と第2ゲートブレイク跡を含み、前記実装面側樹脂は前記第1ゲートブレイク跡を有し、前記放熱面側樹脂は前記第2ゲートブレイク跡を有することを特徴とする請求項2記載の電力用半導体装置。
- 前記第1ゲートブレイク跡と前記第2ゲートブレイク跡は、前記リードフレームの前記実装面に対して垂直な方向に重ならないように配置されていることを特徴とする請求項3記載の電力用半導体装置。
- 前記樹脂パッケージは、4つ以上の側面を有し、前記短手方向側面は、前記長手方向側面と連なる2つの側面のうちの長い方の側面であることを特徴とする請求項1から請求項4のいずれか一項に記載の電力用半導体装置。
- 前記樹脂パッケージを前記短手方向側面から透視した時、前記ゲートブレイク跡と、前記ゲートブレイク跡に最も近い前記リードフレームの角部との距離は、1mm以上であることを特徴とする請求項1から請求項5のいずれか一項に記載の電力用半導体装置。
- 前記リードフレームは、前記樹脂パッケージの前記短手方向側面に隣接する周縁部に、前記リードフレームの他の領域よりも前記樹脂パッケージとの密着性が高い表面改質領域を有することを特徴とする請求項1から請求項6のいずれか一項に記載の電力用半導体装置。
- 樹脂パッケージを備えた電力用半導体装置の製造方法であって、
パワー半導体チップが実装面に搭載されたリードフレームを成形金型のキャビティに配置した後、ゲートを通して前記キャビティに溶融樹脂を注入して樹脂パッケージを成形する工程を含み、
前記樹脂パッケージは、複数の側面のうち最も長い側面である長手方向側面と、前記長手方向側面に連なる短手方向側面とを有するものであり、
前記ゲートは、前記樹脂パッケージの前記短手方向側面の側に配置されていることを特徴とする電力用半導体装置の製造方法。 - 前記成形金型は、複数の前記樹脂パッケージを同時に成形可能な複数の前記キャビティを備え、前記複数のキャビティは、隣接する前記樹脂パッケージの前記長手方向側面が互いに対向するように配置されていることを特徴とする請求項8記載の電力用半導体装置の製造方法。
- 前記ゲートは、前記リードフレームの前記実装面を封止する実装面側樹脂を注入する第1ゲートと、前記実装面と反対側の放熱面を封止する放熱面側樹脂を注入する第2ゲートとを含むことを特徴とする請求項8または請求項9に記載の電力用半導体装置の製造方法。
- 前記第1ゲートと前記第2ゲートは、前記リードフレームの前記実装面に対して垂直な方向に重ならないように配置されていることを特徴とする請求項10記載の電力用半導体装置の製造方法。
- 前記実装面側樹脂と前記放熱面側樹脂は、時間をずらして注入されることを特徴とする請求項10または請求項11に記載の電力用半導体装置の製造方法。
- 前記第1ゲートと前記第2ゲートとの間に、前記リードフレームの周縁部の電気配線上不要な部分を吊りピンとして配置したことを特徴とする請求項10から請求項12のいずれか一項に記載の電力用半導体装置の製造方法。
- 前記第1ゲートと前記第2ゲートとの間に、前記リードフレームの端子形成部を配置すると共に、前記端子形成部と前記第1ゲートとの間、及び前記端子形成部と前記第2ゲートとの間に、前記吊りピンを配置したことを特徴とする請求項13記載の電力用半導体装置の製造方法。
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Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0587962U (ja) * | 1992-04-23 | 1993-11-26 | 新日本無線株式会社 | リードフレーム |
JP2006108279A (ja) * | 2004-10-04 | 2006-04-20 | Matsushita Electric Ind Co Ltd | リードフレームとその製造方法 |
JP2009302526A (ja) * | 2008-05-16 | 2009-12-24 | Denso Corp | 電子回路装置及びその製造方法 |
WO2016166835A1 (ja) * | 2015-04-15 | 2016-10-20 | 三菱電機株式会社 | 半導体装置 |
JP2018117021A (ja) * | 2017-01-17 | 2018-07-26 | エムテックスマツムラ株式会社 | 樹脂成形金型及び樹脂成形装置 |
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US5133921A (en) * | 1987-12-31 | 1992-07-28 | Sanken Electric Co., Ltd. | Method for manufacturing plastic encapsulated electronic semiconductor devices |
JP2005116556A (ja) | 2003-10-02 | 2005-04-28 | Fuji Electric Fa Components & Systems Co Ltd | 樹脂封止型半導体装置の製造方法および設置方法 |
JP2011176206A (ja) * | 2010-02-25 | 2011-09-08 | Renesas Electronics Corp | 半導体装置およびその製造方法 |
CN106471617B (zh) * | 2014-04-04 | 2019-05-10 | 三菱电机株式会社 | 半导体装置 |
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JPH0587962U (ja) * | 1992-04-23 | 1993-11-26 | 新日本無線株式会社 | リードフレーム |
JP2006108279A (ja) * | 2004-10-04 | 2006-04-20 | Matsushita Electric Ind Co Ltd | リードフレームとその製造方法 |
JP2009302526A (ja) * | 2008-05-16 | 2009-12-24 | Denso Corp | 電子回路装置及びその製造方法 |
WO2016166835A1 (ja) * | 2015-04-15 | 2016-10-20 | 三菱電機株式会社 | 半導体装置 |
JP2018117021A (ja) * | 2017-01-17 | 2018-07-26 | エムテックスマツムラ株式会社 | 樹脂成形金型及び樹脂成形装置 |
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