JPWO2020055571A5 - - Google Patents

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Publication number
JPWO2020055571A5
JPWO2020055571A5 JP2021513335A JP2021513335A JPWO2020055571A5 JP WO2020055571 A5 JPWO2020055571 A5 JP WO2020055571A5 JP 2021513335 A JP2021513335 A JP 2021513335A JP 2021513335 A JP2021513335 A JP 2021513335A JP WO2020055571 A5 JPWO2020055571 A5 JP WO2020055571A5
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JP
Japan
Prior art keywords
polishing
semiconductor substrate
pad
slurry
polishing pad
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JP2021513335A
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English (en)
Japanese (ja)
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JP2021536140A (ja
JP2021536140A5 (https=
JP7341223B2 (ja
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Priority claimed from PCT/US2019/047829 external-priority patent/WO2020055571A1/en
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Publication of JPWO2020055571A5 publication Critical patent/JPWO2020055571A5/ja
Publication of JP2021536140A5 publication Critical patent/JP2021536140A5/ja
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JP2021513335A 2018-09-10 2019-08-23 パッド-パッド変動のために調整を行う半導体基板の研磨方法 Active JP7341223B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201862729134P 2018-09-10 2018-09-10
US62/729,134 2018-09-10
PCT/US2019/047829 WO2020055571A1 (en) 2018-09-10 2019-08-23 Methods for polishing semiconductor substrates that adjust for pad-to-pad variance

Publications (4)

Publication Number Publication Date
JP2021536140A JP2021536140A (ja) 2021-12-23
JPWO2020055571A5 true JPWO2020055571A5 (https=) 2022-11-24
JP2021536140A5 JP2021536140A5 (https=) 2022-11-24
JP7341223B2 JP7341223B2 (ja) 2023-09-08

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ID=67841307

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JP2021513335A Active JP7341223B2 (ja) 2018-09-10 2019-08-23 パッド-パッド変動のために調整を行う半導体基板の研磨方法

Country Status (8)

Country Link
US (1) US11081359B2 (https=)
EP (1) EP3849742B1 (https=)
JP (1) JP7341223B2 (https=)
KR (1) KR102515998B1 (https=)
CN (2) CN114734373B (https=)
SG (1) SG11202102118TA (https=)
TW (1) TWI802747B (https=)
WO (1) WO2020055571A1 (https=)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
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JP6635088B2 (ja) * 2017-04-24 2020-01-22 信越半導体株式会社 シリコンウエーハの研磨方法
US20240120192A1 (en) * 2021-03-09 2024-04-11 Shin-Etsu Handotai Co., Ltd. Method of cleaning silicon wafer, method of manufacturing silicon wafer, and silicon wafer
US12394628B2 (en) 2021-12-17 2025-08-19 Globalwafers Co., Ltd. Methods for polishing semiconductor substrates
KR20240126440A (ko) * 2021-12-27 2024-08-20 가부시끼가이샤 레조낙 굴곡 예측 장치, 굴곡 예측 방법, 연마 대상물 가공 방법 및 프로그램
CN115752220A (zh) * 2022-12-09 2023-03-07 上海超硅半导体股份有限公司 一种硅片边缘形貌数据化方法

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TWI268286B (en) 2000-04-28 2006-12-11 Kao Corp Roll-off reducing agent
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WO2003083917A1 (en) * 2002-03-28 2003-10-09 Shin-Etsu Handotai Co.,Ltd. Double side polishing device for wafer and double side polishing method
JP3935757B2 (ja) 2002-03-28 2007-06-27 信越半導体株式会社 ウエーハの両面研磨装置及び両面研磨方法
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KR100623189B1 (ko) 2005-05-18 2006-09-13 삼성전자주식회사 슬러리 공급 장치 및 이를 갖는 웨이퍼 연마 장치
JP2007053298A (ja) 2005-08-19 2007-03-01 Nitta Haas Inc 研磨用組成物
JP4872919B2 (ja) 2005-11-11 2012-02-08 日立化成工業株式会社 酸化ケイ素用研磨剤、添加液および研磨方法
KR20080062020A (ko) 2006-12-28 2008-07-03 주식회사 하이닉스반도체 반도체 웨이퍼의 가공방법
JP5057325B2 (ja) 2007-05-11 2012-10-24 ニッタ・ハース株式会社 研磨パッド
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JP5275595B2 (ja) 2007-08-29 2013-08-28 日本化学工業株式会社 半導体ウエハ研磨用組成物および研磨方法
JP5450946B2 (ja) 2007-09-27 2014-03-26 Sumco Techxiv株式会社 半導体ウェハの両面研磨方法
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JP5415735B2 (ja) 2008-09-26 2014-02-12 株式会社荏原製作所 ドレッシング方法、ドレッシング条件の決定方法、ドレッシング条件決定プログラム、および研磨装置
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