TWI802747B - 依據墊對墊變異量為調整之拋光半導體基板之方法 - Google Patents
依據墊對墊變異量為調整之拋光半導體基板之方法 Download PDFInfo
- Publication number
- TWI802747B TWI802747B TW108131742A TW108131742A TWI802747B TW I802747 B TWI802747 B TW I802747B TW 108131742 A TW108131742 A TW 108131742A TW 108131742 A TW108131742 A TW 108131742A TW I802747 B TWI802747 B TW I802747B
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- Prior art keywords
- polishing
- semiconductor substrate
- pad
- slurry
- polishing pad
- Prior art date
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Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B9/00—Machines or devices designed for grinding edges or bevels on work or for removing burrs; Accessories therefor
- B24B9/02—Machines or devices designed for grinding edges or bevels on work or for removing burrs; Accessories therefor characterised by a special design with respect to properties of materials specific to articles to be ground
- B24B9/06—Machines or devices designed for grinding edges or bevels on work or for removing burrs; Accessories therefor characterised by a special design with respect to properties of materials specific to articles to be ground of non-metallic inorganic material, e.g. stone, ceramics, porcelain
- B24B9/065—Machines or devices designed for grinding edges or bevels on work or for removing burrs; Accessories therefor characterised by a special design with respect to properties of materials specific to articles to be ground of non-metallic inorganic material, e.g. stone, ceramics, porcelain of thin, brittle parts, e.g. semiconductors, wafers
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/005—Control means for lapping machines or devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
- B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
- B24B37/07—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool
- B24B37/10—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool for single side lapping
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/11—Lapping tools
- B24B37/20—Lapping pads for working plane surfaces
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/34—Accessories
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B49/00—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation
- B24B49/02—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation according to the instantaneous size and required size of the workpiece acted upon, the measuring or gauging being continuous or intermittent
- B24B49/03—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation according to the instantaneous size and required size of the workpiece acted upon, the measuring or gauging being continuous or intermittent according to the final size of the previously ground workpiece
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B49/00—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation
- B24B49/02—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation according to the instantaneous size and required size of the workpiece acted upon, the measuring or gauging being continuous or intermittent
- B24B49/04—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation according to the instantaneous size and required size of the workpiece acted upon, the measuring or gauging being continuous or intermittent involving measurement of the workpiece at the place of grinding during grinding operation
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B57/00—Devices for feeding, applying, grading or recovering grinding, polishing or lapping agents
- B24B57/02—Devices for feeding, applying, grading or recovering grinding, polishing or lapping agents for feeding of fluid, sprayed, pulverised, or liquefied grinding, polishing or lapping agents
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
- G01N21/9501—Semiconductor wafers
- G01N21/9503—Wafer edge inspection
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P54/00—Cutting or separating of wafers, substrates or parts of devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
- H10P90/12—Preparing bulk and homogeneous wafers
- H10P90/128—Preparing bulk and homogeneous wafers by edge treatment, e.g. chamfering
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
- H10P90/12—Preparing bulk and homogeneous wafers
- H10P90/129—Preparing bulk and homogeneous wafers by polishing
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
- H10P95/60—Mechanical treatments, e.g. by ultrasounds
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
- H10P52/40—Chemomechanical polishing [CMP]
- H10P52/402—Chemomechanical polishing [CMP] of semiconductor materials
Landscapes
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Immunology (AREA)
- General Health & Medical Sciences (AREA)
- Physics & Mathematics (AREA)
- Health & Medical Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Analytical Chemistry (AREA)
- Biochemistry (AREA)
- Pathology (AREA)
- General Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Inorganic Chemistry (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Constituent Portions Of Griding Lathes, Driving, Sensing And Control (AREA)
- Grinding-Machine Dressing And Accessory Apparatuses (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201862729134P | 2018-09-10 | 2018-09-10 | |
| US62/729,134 | 2018-09-10 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW202023749A TW202023749A (zh) | 2020-07-01 |
| TWI802747B true TWI802747B (zh) | 2023-05-21 |
Family
ID=67841307
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW108131742A TWI802747B (zh) | 2018-09-10 | 2019-09-03 | 依據墊對墊變異量為調整之拋光半導體基板之方法 |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US11081359B2 (https=) |
| EP (1) | EP3849742B1 (https=) |
| JP (1) | JP7341223B2 (https=) |
| KR (1) | KR102515998B1 (https=) |
| CN (2) | CN114734373B (https=) |
| SG (1) | SG11202102118TA (https=) |
| TW (1) | TWI802747B (https=) |
| WO (1) | WO2020055571A1 (https=) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6635088B2 (ja) * | 2017-04-24 | 2020-01-22 | 信越半導体株式会社 | シリコンウエーハの研磨方法 |
| US20240120192A1 (en) * | 2021-03-09 | 2024-04-11 | Shin-Etsu Handotai Co., Ltd. | Method of cleaning silicon wafer, method of manufacturing silicon wafer, and silicon wafer |
| US12394628B2 (en) | 2021-12-17 | 2025-08-19 | Globalwafers Co., Ltd. | Methods for polishing semiconductor substrates |
| KR20240126440A (ko) * | 2021-12-27 | 2024-08-20 | 가부시끼가이샤 레조낙 | 굴곡 예측 장치, 굴곡 예측 방법, 연마 대상물 가공 방법 및 프로그램 |
| CN115752220A (zh) * | 2022-12-09 | 2023-03-07 | 上海超硅半导体股份有限公司 | 一种硅片边缘形貌数据化方法 |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1489649A1 (en) * | 2002-03-28 | 2004-12-22 | Shin-Etsu Handotai Co., Ltd | Double side polishing device for wafer and double side polishing method |
| US6878302B1 (en) * | 2000-03-30 | 2005-04-12 | Memc Electronic Materials, Spa | Method of polishing wafers |
| TWI393183B (zh) * | 2009-06-24 | 2013-04-11 | 世創電子材料公司 | 雙面拋光半導體晶圓的方法 |
| US20170178890A1 (en) * | 2015-12-21 | 2017-06-22 | Sunedison Semiconductor Limited (Uen201334164H) | Semiconductor substrate polishing methods with dynamic control |
| JP2018114582A (ja) * | 2017-01-17 | 2018-07-26 | 株式会社荏原製作所 | 研磨方法 |
Family Cites Families (29)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI268286B (en) | 2000-04-28 | 2006-12-11 | Kao Corp | Roll-off reducing agent |
| JP2002273649A (ja) | 2001-03-15 | 2002-09-25 | Oki Electric Ind Co Ltd | ドレッサ−を有する研磨装置 |
| JP3935757B2 (ja) | 2002-03-28 | 2007-06-27 | 信越半導体株式会社 | ウエーハの両面研磨装置及び両面研磨方法 |
| KR20040056177A (ko) | 2002-12-23 | 2004-06-30 | 주식회사 실트론 | 실리콘웨이퍼의 연마 장치 |
| KR100529434B1 (ko) * | 2003-02-04 | 2005-11-17 | 동부아남반도체 주식회사 | 반도체 기판 연마장치의 패드 컨디셔너 |
| DE10324429B4 (de) * | 2003-05-28 | 2010-08-19 | Advanced Micro Devices, Inc., Sunnyvale | Verfahren zum Betreiben eines chemisch-mechanischen Polier Systems mittels eines Sensorsignals eines Polierkissenkonditionierers |
| TWI386989B (zh) * | 2005-02-25 | 2013-02-21 | 荏原製作所股份有限公司 | 研磨裝置及研磨方法 |
| KR100623189B1 (ko) | 2005-05-18 | 2006-09-13 | 삼성전자주식회사 | 슬러리 공급 장치 및 이를 갖는 웨이퍼 연마 장치 |
| JP2007053298A (ja) | 2005-08-19 | 2007-03-01 | Nitta Haas Inc | 研磨用組成物 |
| JP4872919B2 (ja) | 2005-11-11 | 2012-02-08 | 日立化成工業株式会社 | 酸化ケイ素用研磨剤、添加液および研磨方法 |
| KR20080062020A (ko) | 2006-12-28 | 2008-07-03 | 주식회사 하이닉스반도체 | 반도체 웨이퍼의 가공방법 |
| JP5057325B2 (ja) | 2007-05-11 | 2012-10-24 | ニッタ・ハース株式会社 | 研磨パッド |
| KR100879761B1 (ko) * | 2007-07-12 | 2009-01-21 | 주식회사 실트론 | 화학적 기계적 연마 장치 및 이를 이용한 연마 패드 드레싱방법 |
| JP5275595B2 (ja) | 2007-08-29 | 2013-08-28 | 日本化学工業株式会社 | 半導体ウエハ研磨用組成物および研磨方法 |
| JP5450946B2 (ja) | 2007-09-27 | 2014-03-26 | Sumco Techxiv株式会社 | 半導体ウェハの両面研磨方法 |
| US8192248B2 (en) | 2008-05-30 | 2012-06-05 | Memc Electronic Materials, Inc. | Semiconductor wafer polishing apparatus and method of polishing |
| JP5415735B2 (ja) | 2008-09-26 | 2014-02-12 | 株式会社荏原製作所 | ドレッシング方法、ドレッシング条件の決定方法、ドレッシング条件決定プログラム、および研磨装置 |
| CN102189469B (zh) * | 2010-03-11 | 2013-04-10 | 中芯国际集成电路制造(上海)有限公司 | 用于动态调整化学机械抛光的时间界限的方法 |
| TWI548483B (zh) | 2011-07-19 | 2016-09-11 | 荏原製作所股份有限公司 | 研磨裝置及方法 |
| WO2013031111A1 (ja) | 2011-09-01 | 2013-03-07 | 信越半導体株式会社 | シリコンウェーハの研磨方法及び研磨剤 |
| US20140015107A1 (en) * | 2012-07-12 | 2014-01-16 | Macronix International Co., Ltd. | Method to improve within wafer uniformity of cmp process |
| DE102013201663B4 (de) | 2012-12-04 | 2020-04-23 | Siltronic Ag | Verfahren zum Polieren einer Halbleiterscheibe |
| JP6209088B2 (ja) * | 2013-01-25 | 2017-10-04 | 株式会社荏原製作所 | 研磨方法および装置 |
| US9193025B2 (en) | 2013-03-13 | 2015-11-24 | Sunedison Semiconductor Limited (Uen201334164H) | Single side polishing using shape matching |
| CN105081957A (zh) * | 2014-05-14 | 2015-11-25 | 和舰科技(苏州)有限公司 | 一种用于晶圆平坦化生产的化学机械研磨方法 |
| US9566687B2 (en) | 2014-10-13 | 2017-02-14 | Sunedison Semiconductor Limited (Uen201334164H) | Center flex single side polishing head having recess and cap |
| US10128146B2 (en) * | 2015-08-20 | 2018-11-13 | Globalwafers Co., Ltd. | Semiconductor substrate polishing methods and slurries and methods for manufacturing silicon on insulator structures |
| JP6406238B2 (ja) * | 2015-12-18 | 2018-10-17 | 株式会社Sumco | ウェーハ研磨方法および研磨装置 |
| US11504821B2 (en) * | 2017-11-16 | 2022-11-22 | Applied Materials, Inc. | Predictive filter for polishing pad wear rate monitoring |
-
2019
- 2019-08-22 US US16/548,429 patent/US11081359B2/en active Active
- 2019-08-23 KR KR1020217010352A patent/KR102515998B1/ko active Active
- 2019-08-23 JP JP2021513335A patent/JP7341223B2/ja active Active
- 2019-08-23 WO PCT/US2019/047829 patent/WO2020055571A1/en not_active Ceased
- 2019-08-23 CN CN202210527011.XA patent/CN114734373B/zh active Active
- 2019-08-23 CN CN201980068792.7A patent/CN113165137B/zh active Active
- 2019-08-23 EP EP19762673.2A patent/EP3849742B1/en active Active
- 2019-08-23 SG SG11202102118TA patent/SG11202102118TA/en unknown
- 2019-09-03 TW TW108131742A patent/TWI802747B/zh active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6878302B1 (en) * | 2000-03-30 | 2005-04-12 | Memc Electronic Materials, Spa | Method of polishing wafers |
| EP1489649A1 (en) * | 2002-03-28 | 2004-12-22 | Shin-Etsu Handotai Co., Ltd | Double side polishing device for wafer and double side polishing method |
| TWI393183B (zh) * | 2009-06-24 | 2013-04-11 | 世創電子材料公司 | 雙面拋光半導體晶圓的方法 |
| US20170178890A1 (en) * | 2015-12-21 | 2017-06-22 | Sunedison Semiconductor Limited (Uen201334164H) | Semiconductor substrate polishing methods with dynamic control |
| JP2018114582A (ja) * | 2017-01-17 | 2018-07-26 | 株式会社荏原製作所 | 研磨方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| SG11202102118TA (en) | 2021-04-29 |
| US11081359B2 (en) | 2021-08-03 |
| JP2021536140A (ja) | 2021-12-23 |
| KR102515998B1 (ko) | 2023-03-29 |
| CN113165137B (zh) | 2022-06-14 |
| TW202023749A (zh) | 2020-07-01 |
| US20200083057A1 (en) | 2020-03-12 |
| WO2020055571A1 (en) | 2020-03-19 |
| CN114734373B (zh) | 2025-01-24 |
| KR20210045495A (ko) | 2021-04-26 |
| EP3849742A1 (en) | 2021-07-21 |
| CN114734373A (zh) | 2022-07-12 |
| CN113165137A (zh) | 2021-07-23 |
| JP7341223B2 (ja) | 2023-09-08 |
| EP3849742B1 (en) | 2022-10-05 |
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