CN114734373B - 依据垫对垫变化量进行调整的半导体衬底抛光方法 - Google Patents

依据垫对垫变化量进行调整的半导体衬底抛光方法 Download PDF

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Publication number
CN114734373B
CN114734373B CN202210527011.XA CN202210527011A CN114734373B CN 114734373 B CN114734373 B CN 114734373B CN 202210527011 A CN202210527011 A CN 202210527011A CN 114734373 B CN114734373 B CN 114734373B
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China
Prior art keywords
polishing
semiconductor substrate
pad
slurry
polishing pad
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CN202210527011.XA
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Chinese (zh)
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CN114734373A (zh
Inventor
吉村一朗
A·朱
H·J·邱
S·巴哈加瓦特
金泰亨
片仓则正
北泽大
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GlobalWafers Co Ltd
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GlobalWafers Co Ltd
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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B9/00—Machines or devices designed for grinding edges or bevels on work or for removing burrs; Accessories therefor
    • B24B9/02—Machines or devices designed for grinding edges or bevels on work or for removing burrs; Accessories therefor characterised by a special design with respect to properties of materials specific to articles to be ground
    • B24B9/06—Machines or devices designed for grinding edges or bevels on work or for removing burrs; Accessories therefor characterised by a special design with respect to properties of materials specific to articles to be ground of non-metallic inorganic material, e.g. stone, ceramics, porcelain
    • B24B9/065—Machines or devices designed for grinding edges or bevels on work or for removing burrs; Accessories therefor characterised by a special design with respect to properties of materials specific to articles to be ground of non-metallic inorganic material, e.g. stone, ceramics, porcelain of thin, brittle parts, e.g. semiconductors, wafers
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/005—Control means for lapping machines or devices
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • B24B37/07—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool
    • B24B37/10—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool for single side lapping
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/11—Lapping tools
    • B24B37/20—Lapping pads for working plane surfaces
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/34—Accessories
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B49/00—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation
    • B24B49/02—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation according to the instantaneous size and required size of the workpiece acted upon, the measuring or gauging being continuous or intermittent
    • B24B49/03—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation according to the instantaneous size and required size of the workpiece acted upon, the measuring or gauging being continuous or intermittent according to the final size of the previously ground workpiece
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B49/00—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation
    • B24B49/02—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation according to the instantaneous size and required size of the workpiece acted upon, the measuring or gauging being continuous or intermittent
    • B24B49/04—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation according to the instantaneous size and required size of the workpiece acted upon, the measuring or gauging being continuous or intermittent involving measurement of the workpiece at the place of grinding during grinding operation
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B57/00—Devices for feeding, applying, grading or recovering grinding, polishing or lapping agents
    • B24B57/02—Devices for feeding, applying, grading or recovering grinding, polishing or lapping agents for feeding of fluid, sprayed, pulverised, or liquefied grinding, polishing or lapping agents
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/9501—Semiconductor wafers
    • G01N21/9503—Wafer edge inspection
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P54/00—Cutting or separating of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
    • H10P90/12—Preparing bulk and homogeneous wafers
    • H10P90/128—Preparing bulk and homogeneous wafers by edge treatment, e.g. chamfering
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
    • H10P90/12—Preparing bulk and homogeneous wafers
    • H10P90/129—Preparing bulk and homogeneous wafers by polishing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/60—Mechanical treatments, e.g. by ultrasounds
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H10P52/40—Chemomechanical polishing [CMP]
    • H10P52/402—Chemomechanical polishing [CMP] of semiconductor materials

Landscapes

  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Immunology (AREA)
  • General Health & Medical Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Biochemistry (AREA)
  • Pathology (AREA)
  • General Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Constituent Portions Of Griding Lathes, Driving, Sensing And Control (AREA)
  • Grinding-Machine Dressing And Accessory Apparatuses (AREA)
CN202210527011.XA 2018-09-10 2019-08-23 依据垫对垫变化量进行调整的半导体衬底抛光方法 Active CN114734373B (zh)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US201862729134P 2018-09-10 2018-09-10
US62/729,134 2018-09-10
CN201980068792.7A CN113165137B (zh) 2018-09-10 2019-08-23 依据垫对垫变化量进行调整的半导体衬底抛光方法
PCT/US2019/047829 WO2020055571A1 (en) 2018-09-10 2019-08-23 Methods for polishing semiconductor substrates that adjust for pad-to-pad variance

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
CN201980068792.7A Division CN113165137B (zh) 2018-09-10 2019-08-23 依据垫对垫变化量进行调整的半导体衬底抛光方法

Publications (2)

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CN114734373A CN114734373A (zh) 2022-07-12
CN114734373B true CN114734373B (zh) 2025-01-24

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CN202210527011.XA Active CN114734373B (zh) 2018-09-10 2019-08-23 依据垫对垫变化量进行调整的半导体衬底抛光方法
CN201980068792.7A Active CN113165137B (zh) 2018-09-10 2019-08-23 依据垫对垫变化量进行调整的半导体衬底抛光方法

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Country Status (8)

Country Link
US (1) US11081359B2 (https=)
EP (1) EP3849742B1 (https=)
JP (1) JP7341223B2 (https=)
KR (1) KR102515998B1 (https=)
CN (2) CN114734373B (https=)
SG (1) SG11202102118TA (https=)
TW (1) TWI802747B (https=)
WO (1) WO2020055571A1 (https=)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6635088B2 (ja) * 2017-04-24 2020-01-22 信越半導体株式会社 シリコンウエーハの研磨方法
US20240120192A1 (en) * 2021-03-09 2024-04-11 Shin-Etsu Handotai Co., Ltd. Method of cleaning silicon wafer, method of manufacturing silicon wafer, and silicon wafer
US12394628B2 (en) 2021-12-17 2025-08-19 Globalwafers Co., Ltd. Methods for polishing semiconductor substrates
KR20240126440A (ko) * 2021-12-27 2024-08-20 가부시끼가이샤 레조낙 굴곡 예측 장치, 굴곡 예측 방법, 연마 대상물 가공 방법 및 프로그램
CN115752220A (zh) * 2022-12-09 2023-03-07 上海超硅半导体股份有限公司 一种硅片边缘形貌数据化方法

Family Cites Families (34)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6878302B1 (en) 2000-03-30 2005-04-12 Memc Electronic Materials, Spa Method of polishing wafers
TWI268286B (en) 2000-04-28 2006-12-11 Kao Corp Roll-off reducing agent
JP2002273649A (ja) 2001-03-15 2002-09-25 Oki Electric Ind Co Ltd ドレッサ−を有する研磨装置
WO2003083917A1 (en) * 2002-03-28 2003-10-09 Shin-Etsu Handotai Co.,Ltd. Double side polishing device for wafer and double side polishing method
JP3935757B2 (ja) 2002-03-28 2007-06-27 信越半導体株式会社 ウエーハの両面研磨装置及び両面研磨方法
KR20040056177A (ko) 2002-12-23 2004-06-30 주식회사 실트론 실리콘웨이퍼의 연마 장치
KR100529434B1 (ko) * 2003-02-04 2005-11-17 동부아남반도체 주식회사 반도체 기판 연마장치의 패드 컨디셔너
DE10324429B4 (de) * 2003-05-28 2010-08-19 Advanced Micro Devices, Inc., Sunnyvale Verfahren zum Betreiben eines chemisch-mechanischen Polier Systems mittels eines Sensorsignals eines Polierkissenkonditionierers
TWI386989B (zh) * 2005-02-25 2013-02-21 荏原製作所股份有限公司 研磨裝置及研磨方法
KR100623189B1 (ko) 2005-05-18 2006-09-13 삼성전자주식회사 슬러리 공급 장치 및 이를 갖는 웨이퍼 연마 장치
JP2007053298A (ja) 2005-08-19 2007-03-01 Nitta Haas Inc 研磨用組成物
JP4872919B2 (ja) 2005-11-11 2012-02-08 日立化成工業株式会社 酸化ケイ素用研磨剤、添加液および研磨方法
KR20080062020A (ko) 2006-12-28 2008-07-03 주식회사 하이닉스반도체 반도체 웨이퍼의 가공방법
JP5057325B2 (ja) 2007-05-11 2012-10-24 ニッタ・ハース株式会社 研磨パッド
KR100879761B1 (ko) * 2007-07-12 2009-01-21 주식회사 실트론 화학적 기계적 연마 장치 및 이를 이용한 연마 패드 드레싱방법
JP5275595B2 (ja) 2007-08-29 2013-08-28 日本化学工業株式会社 半導体ウエハ研磨用組成物および研磨方法
JP5450946B2 (ja) 2007-09-27 2014-03-26 Ｓｕｍｃｏ Ｔｅｃｈｘｉｖ株式会社 半導体ウェハの両面研磨方法
US8192248B2 (en) 2008-05-30 2012-06-05 Memc Electronic Materials, Inc. Semiconductor wafer polishing apparatus and method of polishing
JP5415735B2 (ja) 2008-09-26 2014-02-12 株式会社荏原製作所 ドレッシング方法、ドレッシング条件の決定方法、ドレッシング条件決定プログラム、および研磨装置
DE102009030292B4 (de) * 2009-06-24 2011-12-01 Siltronic Ag Verfahren zum beidseitigen Polieren einer Halbleiterscheibe
CN102189469B (zh) * 2010-03-11 2013-04-10 中芯国际集成电路制造(上海)有限公司 用于动态调整化学机械抛光的时间界限的方法
TWI548483B (zh) 2011-07-19 2016-09-11 荏原製作所股份有限公司 研磨裝置及方法
WO2013031111A1 (ja) 2011-09-01 2013-03-07 信越半導体株式会社 シリコンウェーハの研磨方法及び研磨剤
US20140015107A1 (en) * 2012-07-12 2014-01-16 Macronix International Co., Ltd. Method to improve within wafer uniformity of cmp process
DE102013201663B4 (de) 2012-12-04 2020-04-23 Siltronic Ag Verfahren zum Polieren einer Halbleiterscheibe
JP6209088B2 (ja) * 2013-01-25 2017-10-04 株式会社荏原製作所 研磨方法および装置
US9193025B2 (en) 2013-03-13 2015-11-24 Sunedison Semiconductor Limited (Uen201334164H) Single side polishing using shape matching
CN105081957A (zh) * 2014-05-14 2015-11-25 和舰科技(苏州)有限公司 一种用于晶圆平坦化生产的化学机械研磨方法
US9566687B2 (en) 2014-10-13 2017-02-14 Sunedison Semiconductor Limited (Uen201334164H) Center flex single side polishing head having recess and cap
US10128146B2 (en) * 2015-08-20 2018-11-13 Globalwafers Co., Ltd. Semiconductor substrate polishing methods and slurries and methods for manufacturing silicon on insulator structures
JP6406238B2 (ja) * 2015-12-18 2018-10-17 株式会社Sumco ウェーハ研磨方法および研磨装置
US10600634B2 (en) * 2015-12-21 2020-03-24 Globalwafers Co., Ltd. Semiconductor substrate polishing methods with dynamic control
JP6794275B2 (ja) 2017-01-17 2020-12-02 株式会社荏原製作所 研磨方法
US11504821B2 (en) * 2017-11-16 2022-11-22 Applied Materials, Inc. Predictive filter for polishing pad wear rate monitoring

Also Published As

Publication number Publication date
SG11202102118TA (en) 2021-04-29
US11081359B2 (en) 2021-08-03
TWI802747B (zh) 2023-05-21
JP2021536140A (ja) 2021-12-23
KR102515998B1 (ko) 2023-03-29
CN113165137B (zh) 2022-06-14
TW202023749A (zh) 2020-07-01
US20200083057A1 (en) 2020-03-12
WO2020055571A1 (en) 2020-03-19
KR20210045495A (ko) 2021-04-26
EP3849742A1 (en) 2021-07-21
CN114734373A (zh) 2022-07-12
CN113165137A (zh) 2021-07-23
JP7341223B2 (ja) 2023-09-08
EP3849742B1 (en) 2022-10-05

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