JPWO2020055571A5 - - Google Patents
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- Publication number
- JPWO2020055571A5 JPWO2020055571A5 JP2021513335A JP2021513335A JPWO2020055571A5 JP WO2020055571 A5 JPWO2020055571 A5 JP WO2020055571A5 JP 2021513335 A JP2021513335 A JP 2021513335A JP 2021513335 A JP2021513335 A JP 2021513335A JP WO2020055571 A5 JPWO2020055571 A5 JP WO2020055571A5
- Authority
- JP
- Japan
- Prior art keywords
- polishing
- semiconductor substrate
- pad
- slurry
- polishing pad
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201862729134P | 2018-09-10 | 2018-09-10 | |
| US62/729,134 | 2018-09-10 | ||
| PCT/US2019/047829 WO2020055571A1 (fr) | 2018-09-10 | 2019-08-23 | Procédés de polissage de substrats semi-conducteurs qui ajustent une variance entre les tampons |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2021536140A JP2021536140A (ja) | 2021-12-23 |
| JPWO2020055571A5 true JPWO2020055571A5 (fr) | 2022-11-24 |
| JP7341223B2 JP7341223B2 (ja) | 2023-09-08 |
Family
ID=67841307
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2021513335A Active JP7341223B2 (ja) | 2018-09-10 | 2019-08-23 | パッド－パッド変動のために調整を行う半導体基板の研磨方法 |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US11081359B2 (fr) |
| EP (1) | EP3849742B1 (fr) |
| JP (1) | JP7341223B2 (fr) |
| KR (1) | KR102515998B1 (fr) |
| CN (2) | CN114734373A (fr) |
| SG (1) | SG11202102118TA (fr) |
| TW (1) | TWI802747B (fr) |
| WO (1) | WO2020055571A1 (fr) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6635088B2 (ja) * | 2017-04-24 | 2020-01-22 | 信越半導体株式会社 | シリコンウエーハの研磨方法 |
| KR20240126440A (ko) * | 2021-12-27 | 2024-08-20 | 가부시끼가이샤 레조낙 | 굴곡 예측 장치, 굴곡 예측 방법, 연마 대상물 가공 방법 및 프로그램 |
| CN115752220A (zh) * | 2022-12-09 | 2023-03-07 | 上海超硅半导体股份有限公司 | 一种硅片边缘形貌数据化方法 |
Family Cites Families (32)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2001074532A1 (fr) | 2000-03-30 | 2001-10-11 | Memc Electronic Materials, S.P.A. | Procede de polissage de plaquettes |
| TWI268286B (en) | 2000-04-28 | 2006-12-11 | Kao Corp | Roll-off reducing agent |
| JP2002273649A (ja) | 2001-03-15 | 2002-09-25 | Oki Electric Ind Co Ltd | ドレッサ−を有する研磨装置 |
| CN100380600C (zh) | 2002-03-28 | 2008-04-09 | 信越半导体株式会社 | 晶片的两面研磨装置及两面研磨方法 |
| JP3935757B2 (ja) | 2002-03-28 | 2007-06-27 | 信越半導体株式会社 | ウエーハの両面研磨装置及び両面研磨方法 |
| KR20040056177A (ko) | 2002-12-23 | 2004-06-30 | 주식회사 실트론 | 실리콘웨이퍼의 연마 장치 |
| KR100529434B1 (ko) * | 2003-02-04 | 2005-11-17 | 동부아남반도체 주식회사 | 반도체 기판 연마장치의 패드 컨디셔너 |
| DE10324429B4 (de) * | 2003-05-28 | 2010-08-19 | Advanced Micro Devices, Inc., Sunnyvale | Verfahren zum Betreiben eines chemisch-mechanischen Polier Systems mittels eines Sensorsignals eines Polierkissenkonditionierers |
| TWI386989B (zh) * | 2005-02-25 | 2013-02-21 | Ebara Corp | 研磨裝置及研磨方法 |
| KR100623189B1 (ko) | 2005-05-18 | 2006-09-13 | 삼성전자주식회사 | 슬러리 공급 장치 및 이를 갖는 웨이퍼 연마 장치 |
| JP2007053298A (ja) | 2005-08-19 | 2007-03-01 | Nitta Haas Inc | 研磨用組成物 |
| KR101243423B1 (ko) | 2005-11-11 | 2013-03-13 | 히타치가세이가부시끼가이샤 | 산화규소용 연마제, 첨가액 및 연마 방법 |
| KR20080062020A (ko) | 2006-12-28 | 2008-07-03 | 주식회사 하이닉스반도체 | 반도체 웨이퍼의 가공방법 |
| JP5057325B2 (ja) | 2007-05-11 | 2012-10-24 | ニッタ・ハース株式会社 | 研磨パッド |
| JP5275595B2 (ja) | 2007-08-29 | 2013-08-28 | 日本化学工業株式会社 | 半導体ウエハ研磨用組成物および研磨方法 |
| JP5450946B2 (ja) | 2007-09-27 | 2014-03-26 | Ｓｕｍｃｏ Ｔｅｃｈｘｉｖ株式会社 | 半導体ウェハの両面研磨方法 |
| US8192248B2 (en) | 2008-05-30 | 2012-06-05 | Memc Electronic Materials, Inc. | Semiconductor wafer polishing apparatus and method of polishing |
| JP5415735B2 (ja) | 2008-09-26 | 2014-02-12 | 株式会社荏原製作所 | ドレッシング方法、ドレッシング条件の決定方法、ドレッシング条件決定プログラム、および研磨装置 |
| DE102009030292B4 (de) * | 2009-06-24 | 2011-12-01 | Siltronic Ag | Verfahren zum beidseitigen Polieren einer Halbleiterscheibe |
| CN102189469B (zh) * | 2010-03-11 | 2013-04-10 | 中芯国际集成电路制造(上海)有限公司 | 用于动态调整化学机械抛光的时间界限的方法 |
| TWI548483B (zh) | 2011-07-19 | 2016-09-11 | 荏原製作所股份有限公司 | 研磨裝置及方法 |
| JP5598607B2 (ja) | 2011-09-01 | 2014-10-01 | 信越半導体株式会社 | シリコンウェーハの研磨方法及び研磨剤 |
| US20140015107A1 (en) * | 2012-07-12 | 2014-01-16 | Macronix International Co., Ltd. | Method to improve within wafer uniformity of cmp process |
| DE102013201663B4 (de) | 2012-12-04 | 2020-04-23 | Siltronic Ag | Verfahren zum Polieren einer Halbleiterscheibe |
| US9193025B2 (en) | 2013-03-13 | 2015-11-24 | Sunedison Semiconductor Limited (Uen201334164H) | Single side polishing using shape matching |
| CN105081957A (zh) * | 2014-05-14 | 2015-11-25 | 和舰科技(苏州)有限公司 | 一种用于晶圆平坦化生产的化学机械研磨方法 |
| US9566687B2 (en) | 2014-10-13 | 2017-02-14 | Sunedison Semiconductor Limited (Uen201334164H) | Center flex single side polishing head having recess and cap |
| US10128146B2 (en) * | 2015-08-20 | 2018-11-13 | Globalwafers Co., Ltd. | Semiconductor substrate polishing methods and slurries and methods for manufacturing silicon on insulator structures |
| JP6406238B2 (ja) * | 2015-12-18 | 2018-10-17 | 株式会社Sumco | ウェーハ研磨方法および研磨装置 |
| US10600634B2 (en) * | 2015-12-21 | 2020-03-24 | Globalwafers Co., Ltd. | Semiconductor substrate polishing methods with dynamic control |
| JP6794275B2 (ja) | 2017-01-17 | 2020-12-02 | 株式会社荏原製作所 | 研磨方法 |
| JP7050152B2 (ja) * | 2017-11-16 | 2022-04-07 | アプライド マテリアルズ インコーポレイテッド | 研磨パッド摩耗率のモニタリングのための予測フィルタ |
-
2019
- 2019-08-22 US US16/548,429 patent/US11081359B2/en active Active
- 2019-08-23 JP JP2021513335A patent/JP7341223B2/ja active Active
- 2019-08-23 SG SG11202102118TA patent/SG11202102118TA/en unknown
- 2019-08-23 CN CN202210527011.XA patent/CN114734373A/zh active Pending
- 2019-08-23 CN CN201980068792.7A patent/CN113165137B/zh active Active
- 2019-08-23 KR KR1020217010352A patent/KR102515998B1/ko active IP Right Grant
- 2019-08-23 WO PCT/US2019/047829 patent/WO2020055571A1/fr unknown
- 2019-08-23 EP EP19762673.2A patent/EP3849742B1/fr active Active
- 2019-09-03 TW TW108131742A patent/TWI802747B/zh active
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