JPWO2020021383A5 - - Google Patents
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- Publication number
- JPWO2020021383A5 JPWO2020021383A5 JP2020531830A JP2020531830A JPWO2020021383A5 JP WO2020021383 A5 JPWO2020021383 A5 JP WO2020021383A5 JP 2020531830 A JP2020531830 A JP 2020531830A JP 2020531830 A JP2020531830 A JP 2020531830A JP WO2020021383 A5 JPWO2020021383 A5 JP WO2020021383A5
- Authority
- JP
- Japan
- Prior art keywords
- oxide
- insulator
- conductor
- overlaps
- region
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000012212 insulator Substances 0.000 claims 75
- 239000004020 conductor Substances 0.000 claims 47
- 239000004065 semiconductor Substances 0.000 claims 8
- 229910052782 aluminium Inorganic materials 0.000 claims 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2023069136A JP7420999B2 (ja) | 2018-07-27 | 2023-04-20 | 半導体装置 |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2018141425 | 2018-07-27 | ||
| JP2018141425 | 2018-07-27 | ||
| PCT/IB2019/056049 WO2020021383A1 (ja) | 2018-07-27 | 2019-07-16 | 半導体装置 |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2023069136A Division JP7420999B2 (ja) | 2018-07-27 | 2023-04-20 | 半導体装置 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JPWO2020021383A1 JPWO2020021383A1 (ja) | 2021-08-12 |
| JPWO2020021383A5 true JPWO2020021383A5 (enExample) | 2022-07-21 |
| JP7268027B2 JP7268027B2 (ja) | 2023-05-02 |
Family
ID=69182220
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2020531830A Active JP7268027B2 (ja) | 2018-07-27 | 2019-07-16 | 半導体装置 |
| JP2023069136A Active JP7420999B2 (ja) | 2018-07-27 | 2023-04-20 | 半導体装置 |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2023069136A Active JP7420999B2 (ja) | 2018-07-27 | 2023-04-20 | 半導体装置 |
Country Status (4)
| Country | Link |
|---|---|
| US (2) | US11804551B2 (enExample) |
| JP (2) | JP7268027B2 (enExample) |
| TW (1) | TWI856966B (enExample) |
| WO (1) | WO2020021383A1 (enExample) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US11594624B2 (en) * | 2018-12-13 | 2023-02-28 | Intel Corporation | Transistor structures formed with 2DEG at complex oxide interfaces |
| US12113115B2 (en) * | 2021-02-09 | 2024-10-08 | Taiwan Semiconductor Manufacturing Company Limited | Thin film transistor including a compositionally-graded gate dielectric and methods for forming the same |
| US12426277B2 (en) | 2021-07-23 | 2025-09-23 | Taiwan Semiconductor Manufacturing Company, Ltd. | Embedded double side heating phase change random access memory (PCRAM) device and method of making same |
| US12211739B2 (en) | 2022-05-11 | 2025-01-28 | Nanya Technology Corporation | Method for manufacturing semiconductor device comprising contact void surrounding bit line |
| US12278142B2 (en) | 2022-05-11 | 2025-04-15 | Nanya Technology Corporation | Method for manfacturing semiconductor device for reducing partcle-induced defects |
| TWI826174B (zh) * | 2022-05-11 | 2023-12-11 | 南亞科技股份有限公司 | 半導體元件的製備方法 |
Family Cites Families (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102804360B (zh) | 2009-12-25 | 2014-12-17 | 株式会社半导体能源研究所 | 半导体装置 |
| DE112011102644B4 (de) | 2010-08-06 | 2019-12-05 | Semiconductor Energy Laboratory Co., Ltd. | Integrierte Halbleiterschaltung |
| KR20130046357A (ko) | 2011-10-27 | 2013-05-07 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
| CN104584229B (zh) | 2012-08-10 | 2018-05-15 | 株式会社半导体能源研究所 | 半导体装置及其制造方法 |
| JP2015149414A (ja) * | 2014-02-06 | 2015-08-20 | 株式会社東芝 | 半導体装置及び撮像装置 |
| KR20160132982A (ko) | 2014-03-18 | 2016-11-21 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치와 그 제작 방법 |
| WO2016016761A1 (en) | 2014-07-31 | 2016-02-04 | Semiconductor Energy Laboratory Co., Ltd. | Method of manufacturing semiconductor device |
| JP6736321B2 (ja) | 2015-03-27 | 2020-08-05 | 株式会社半導体エネルギー研究所 | 半導体装置の製造方法 |
| CN113571588A (zh) * | 2015-04-13 | 2021-10-29 | 株式会社半导体能源研究所 | 半导体装置及其制造方法 |
| US10164120B2 (en) | 2015-05-28 | 2018-12-25 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device |
| WO2016203354A1 (en) | 2015-06-19 | 2016-12-22 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device, manufacturing method thereof, and electronic device |
| WO2017072627A1 (ja) | 2015-10-28 | 2017-05-04 | 株式会社半導体エネルギー研究所 | 半導体装置、モジュール、電子機器および半導体装置の作製方法 |
| US10868045B2 (en) * | 2015-12-11 | 2020-12-15 | Semiconductor Energy Laboratory Co., Ltd. | Transistor, semiconductor device, and electronic device |
| US9954003B2 (en) | 2016-02-17 | 2018-04-24 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and electronic device |
| WO2018051208A1 (en) | 2016-09-14 | 2018-03-22 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method of the same |
| JP2018073995A (ja) * | 2016-10-28 | 2018-05-10 | 株式会社半導体エネルギー研究所 | 半導体装置、および半導体装置の作製方法 |
| WO2019053573A1 (ja) | 2017-09-15 | 2019-03-21 | 株式会社半導体エネルギー研究所 | 半導体装置、および半導体装置の作製方法 |
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2019
- 2019-07-16 JP JP2020531830A patent/JP7268027B2/ja active Active
- 2019-07-16 WO PCT/IB2019/056049 patent/WO2020021383A1/ja not_active Ceased
- 2019-07-16 US US17/257,921 patent/US11804551B2/en active Active
- 2019-07-22 TW TW108125759A patent/TWI856966B/zh active
-
2023
- 2023-04-20 JP JP2023069136A patent/JP7420999B2/ja active Active
- 2023-09-15 US US18/368,630 patent/US12068417B2/en active Active