JP7268027B2 - 半導体装置 - Google Patents

半導体装置 Download PDF

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Publication number
JP7268027B2
JP7268027B2 JP2020531830A JP2020531830A JP7268027B2 JP 7268027 B2 JP7268027 B2 JP 7268027B2 JP 2020531830 A JP2020531830 A JP 2020531830A JP 2020531830 A JP2020531830 A JP 2020531830A JP 7268027 B2 JP7268027 B2 JP 7268027B2
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Japan
Prior art keywords
oxide
insulator
conductor
oxygen
transistor
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JP2020531830A
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English (en)
Japanese (ja)
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JPWO2020021383A5 (enExample
JPWO2020021383A1 (ja
Inventor
大介 松林
悠一 柳澤
正弘 高橋
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Publication of JPWO2020021383A1 publication Critical patent/JPWO2020021383A1/ja
Publication of JPWO2020021383A5 publication Critical patent/JPWO2020021383A5/ja
Priority to JP2023069136A priority Critical patent/JP7420999B2/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/70—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates the floating gate being an electrode shared by two or more components
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H10D30/6733—Multi-gate TFTs
    • H10D30/6734—Multi-gate TFTs having gate electrodes arranged on both top and bottom sides of the channel, e.g. dual-gate TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6757—Thin-film transistors [TFT] characterised by the structure of the channel, e.g. transverse or longitudinal shape or doping profile
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/393—Body regions of DMOS transistors or IGBTs 

Landscapes

  • Thin Film Transistor (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Semiconductor Memories (AREA)
  • Electrodes Of Semiconductors (AREA)
JP2020531830A 2018-07-27 2019-07-16 半導体装置 Active JP7268027B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2023069136A JP7420999B2 (ja) 2018-07-27 2023-04-20 半導体装置

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2018141425 2018-07-27
JP2018141425 2018-07-27
PCT/IB2019/056049 WO2020021383A1 (ja) 2018-07-27 2019-07-16 半導体装置

Related Child Applications (1)

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JP2023069136A Division JP7420999B2 (ja) 2018-07-27 2023-04-20 半導体装置

Publications (3)

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JPWO2020021383A1 JPWO2020021383A1 (ja) 2021-08-12
JPWO2020021383A5 JPWO2020021383A5 (enExample) 2022-07-21
JP7268027B2 true JP7268027B2 (ja) 2023-05-02

Family

ID=69182220

Family Applications (2)

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JP2020531830A Active JP7268027B2 (ja) 2018-07-27 2019-07-16 半導体装置
JP2023069136A Active JP7420999B2 (ja) 2018-07-27 2023-04-20 半導体装置

Family Applications After (1)

Application Number Title Priority Date Filing Date
JP2023069136A Active JP7420999B2 (ja) 2018-07-27 2023-04-20 半導体装置

Country Status (4)

Country Link
US (2) US11804551B2 (enExample)
JP (2) JP7268027B2 (enExample)
TW (1) TWI856966B (enExample)
WO (1) WO2020021383A1 (enExample)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11594624B2 (en) * 2018-12-13 2023-02-28 Intel Corporation Transistor structures formed with 2DEG at complex oxide interfaces
US12113115B2 (en) * 2021-02-09 2024-10-08 Taiwan Semiconductor Manufacturing Company Limited Thin film transistor including a compositionally-graded gate dielectric and methods for forming the same
US12426277B2 (en) 2021-07-23 2025-09-23 Taiwan Semiconductor Manufacturing Company, Ltd. Embedded double side heating phase change random access memory (PCRAM) device and method of making same
US12211739B2 (en) 2022-05-11 2025-01-28 Nanya Technology Corporation Method for manufacturing semiconductor device comprising contact void surrounding bit line
US12278142B2 (en) 2022-05-11 2025-04-15 Nanya Technology Corporation Method for manfacturing semiconductor device for reducing partcle-induced defects
TWI826174B (zh) * 2022-05-11 2023-12-11 南亞科技股份有限公司 半導體元件的製備方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2017072627A1 (ja) 2015-10-28 2017-05-04 株式会社半導体エネルギー研究所 半導体装置、モジュール、電子機器および半導体装置の作製方法
JP2017130647A (ja) 2015-12-11 2017-07-27 株式会社半導体エネルギー研究所 トランジスタ、半導体装置、および電子機器

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102804360B (zh) 2009-12-25 2014-12-17 株式会社半导体能源研究所 半导体装置
DE112011102644B4 (de) 2010-08-06 2019-12-05 Semiconductor Energy Laboratory Co., Ltd. Integrierte Halbleiterschaltung
KR20130046357A (ko) 2011-10-27 2013-05-07 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
CN104584229B (zh) 2012-08-10 2018-05-15 株式会社半导体能源研究所 半导体装置及其制造方法
JP2015149414A (ja) * 2014-02-06 2015-08-20 株式会社東芝 半導体装置及び撮像装置
KR20160132982A (ko) 2014-03-18 2016-11-21 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치와 그 제작 방법
WO2016016761A1 (en) 2014-07-31 2016-02-04 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing semiconductor device
JP6736321B2 (ja) 2015-03-27 2020-08-05 株式会社半導体エネルギー研究所 半導体装置の製造方法
CN113571588A (zh) * 2015-04-13 2021-10-29 株式会社半导体能源研究所 半导体装置及其制造方法
US10164120B2 (en) 2015-05-28 2018-12-25 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
WO2016203354A1 (en) 2015-06-19 2016-12-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, manufacturing method thereof, and electronic device
US9954003B2 (en) 2016-02-17 2018-04-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and electronic device
WO2018051208A1 (en) 2016-09-14 2018-03-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method of the same
JP2018073995A (ja) * 2016-10-28 2018-05-10 株式会社半導体エネルギー研究所 半導体装置、および半導体装置の作製方法
WO2019053573A1 (ja) 2017-09-15 2019-03-21 株式会社半導体エネルギー研究所 半導体装置、および半導体装置の作製方法

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2017072627A1 (ja) 2015-10-28 2017-05-04 株式会社半導体エネルギー研究所 半導体装置、モジュール、電子機器および半導体装置の作製方法
JP2017130647A (ja) 2015-12-11 2017-07-27 株式会社半導体エネルギー研究所 トランジスタ、半導体装置、および電子機器

Also Published As

Publication number Publication date
US11804551B2 (en) 2023-10-31
US12068417B2 (en) 2024-08-20
US20240113226A1 (en) 2024-04-04
JP7420999B2 (ja) 2024-01-23
US20210280718A1 (en) 2021-09-09
TW202025447A (zh) 2020-07-01
WO2020021383A1 (ja) 2020-01-30
JPWO2020021383A1 (ja) 2021-08-12
TWI856966B (zh) 2024-10-01
JP2023086839A (ja) 2023-06-22

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