JPWO2019239632A1 - パワー半導体素子及びその製造方法 - Google Patents
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Abstract
Description
9 p+型基板コンタクト層
10 n+型ソース領域
11 ゲート引出電極
12 ソース電極
13 p型Siバルク層
14 p型ブロック層
15 Si/SiCヘテロ接合界面
16 n−型SiCドリフト層
17 n+型SiCドレイン層
18 ドレイン電極
19 被覆絶縁膜
22 トレンチ
23 トレンチゲート電極
25 ゲート酸化膜
27 電位分布等高線
29 トレンチゲート底面酸化膜
30 n型ソース拡散層
31,32 ゲート電極
33 p型SiC領域
36 n型ドリフト領域
37 n型ドレイン拡散領域
38 ドレイン電極
39 絶縁保護膜
42 特許文献1の公知例におけるデバイス
48 SiC基板
49 サイドウォールゲート
52 ソース電極
54 ドレイン電極
56′n型層SiCドリフト層/n型Si層界面
57 n型層Si拡散層
58 n型Siソース拡散層
59 n型層SiCドレイン拡散層
60 p型Si基板
61 ゲート酸化膜
62 ショットキー接合電極
71 界面準位
72 ドレイン拡散層
73 トレンチ隅ゲート酸化膜
Claims (9)
- 第一導電型のドレイン層と、前記ドレイン層より不純物濃度の低い第一導電型のドリフト層を有するSiC基板と、
前記ドリフト層に直接接合し、前記第一導電型と反対導電型の第二導電型のSi基板と、
前記ドリフト層と前記Si基板との間に前記Si基板に電界が侵入することをブロックする第二導電型のブロック層を有し、
前記Si基板は少なくとも前記ドリフト層に達するトレンチを有し、
前記トレンチの少なくとも内側の表面に設けられたゲート絶縁膜と、
前記ゲート絶縁膜を埋め込むトレンチゲート電極と、
前記Si基板の露出表面側に設けられた第一導電型のソース領域と第二導電型の基板コンタクト領域と、
前記ソース領域と前記基板コンタクト領域に接続するソース電極と、
前記ドレイン領域に接続するドレイン電極と
を有するパワー半導体素子。 - 前記SiC基板と前記Si基板の接合界面が、表面活性化接合界面である請求項1に記載のパワー半導体素子。
- 前記トレンチゲート電極の先端部が少なくとも前記SiCドリフト層に達している請求項1または請求項2に記載のパワー半導体素子。
- 前記トレンチゲート電極の先端部の角が、最低0.05μmで、最大で前記トレンチゲート電極の幅の半分の曲率半径の丸みを有する請求項3に記載のパワー半導体素子。
- 複数の前記トレンチゲート電極が平行に設けられ、前記トレンチゲート電極の間に挟まれた前記Si基板の水平方向の幅が2μm以下である請求項2乃至請求項4のいずれか1項に記載のパワー半導体素子。
- 前記ブロック層が、前記Si基板より高不純物濃度の第二導電型のSiブロック層である請求項1乃至請求項5のいずれか1項に記載のパワー半導体素子。
- 前記ブロック層が、前記Si基板との接合界面側に設けた前記SiCドリフト層より高不純物濃度の第二導電型のSiCブロック層である請求項1乃至請求項5のいずれか1項に記載のパワー半導体素子。
- 前記SiC基板が4H結晶構造の[0001]のSi面を主面とするSiC基板であり、前記Si基板が(111)面を主面とするSi基板である請求項1乃至請求項7のいずれか1項に記載のパワー半導体素子。
- 第一導電型のドレイン層上に第一導電型のSiCドリフト層をエピタキシャル成長させてSiC基板を形成し、
前記SiCドリフト層の表面或いは前記第一導電型と反対導電型の第二導電型のSi基板の表面に第二導電型のブロック層を形成し、
前記SiCドリフト層側の表面と前記Si基板側の表面にイオン或いはAr中性原子ビームを照射して自然酸化膜を除去して表面を活性化させ、
前記SiC基板と前記Si基板を相対して直接接合により合体させ、
前記Si基板を0.5μmから1.2μmまでの厚さまで研磨し、
前記Si基板に少なくとも前記ドリフト層に達するトレンチ形成するパワー半導体素子の製造方法。
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JP2018213516 | 2018-11-14 | ||
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JP2020088136A (ja) * | 2018-11-22 | 2020-06-04 | 渡辺 浩志 | パワー半導体装置 |
JP7382558B2 (ja) * | 2019-12-25 | 2023-11-17 | 株式会社ノベルクリスタルテクノロジー | トレンチ型mosfet |
JP6873516B1 (ja) | 2020-06-05 | 2021-05-19 | Eastwind合同会社 | パワー半導体素子及びその製造方法 |
CN115440822B (zh) * | 2022-09-15 | 2023-08-22 | 江苏应能微电子股份有限公司 | 碳化硅功率金属氧化物半导体场效应晶体管及其制备方法 |
CN118630053A (zh) * | 2023-03-09 | 2024-09-10 | 华润微电子(重庆)有限公司 | 分裂栅型沟槽碳化硅mosfet器件及其制备方法 |
CN116504842B (zh) * | 2023-06-28 | 2023-09-26 | 浙江大学 | 异质结绝缘栅场效应管及其制造方法、半导体器件 |
CN116895699A (zh) * | 2023-09-08 | 2023-10-17 | 成都蓉矽半导体有限公司 | 一种具有异质结的共源共栅沟槽mosfet及制备方法 |
CN117423729A (zh) * | 2023-12-18 | 2024-01-19 | 深圳天狼芯半导体有限公司 | 一种具有异质结的沟槽栅vdmos及制备方法 |
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