JPWO2019073781A1 - セラミック基板、積層体およびsawデバイス - Google Patents
セラミック基板、積層体およびsawデバイス Download PDFInfo
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- 239000000758 substrate Substances 0.000 title claims abstract description 145
- 239000000919 ceramic Substances 0.000 title claims abstract description 114
- 239000013078 crystal Substances 0.000 claims abstract description 48
- 239000000463 material Substances 0.000 claims description 15
- 239000011029 spinel Substances 0.000 claims description 10
- 229910052596 spinel Inorganic materials 0.000 claims description 10
- CPLXHLVBOLITMK-UHFFFAOYSA-N Magnesium oxide Chemical compound [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 claims description 9
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 7
- 238000005411 Van der Waals force Methods 0.000 claims description 6
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 5
- 230000008878 coupling Effects 0.000 claims description 5
- 238000010168 coupling process Methods 0.000 claims description 5
- 238000005859 coupling reaction Methods 0.000 claims description 5
- WSMQKESQZFQMFW-UHFFFAOYSA-N 5-methyl-pyrazole-3-carboxylic acid Chemical compound CC1=CC(C(O)=O)=NN1 WSMQKESQZFQMFW-UHFFFAOYSA-N 0.000 claims description 4
- ODINCKMPIJJUCX-UHFFFAOYSA-N Calcium oxide Chemical compound [Ca]=O ODINCKMPIJJUCX-UHFFFAOYSA-N 0.000 claims description 4
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 4
- 229910052878 cordierite Inorganic materials 0.000 claims description 4
- JSKIRARMQDRGJZ-UHFFFAOYSA-N dimagnesium dioxido-bis[(1-oxido-3-oxo-2,4,6,8,9-pentaoxa-1,3-disila-5,7-dialuminabicyclo[3.3.1]nonan-7-yl)oxy]silane Chemical compound [Mg++].[Mg++].[O-][Si]([O-])(O[Al]1O[Al]2O[Si](=O)O[Si]([O-])(O1)O2)O[Al]1O[Al]2O[Si](=O)O[Si]([O-])(O1)O2 JSKIRARMQDRGJZ-UHFFFAOYSA-N 0.000 claims description 4
- KZHJGOXRZJKJNY-UHFFFAOYSA-N dioxosilane;oxo(oxoalumanyloxy)alumane Chemical compound O=[Si]=O.O=[Si]=O.O=[Al]O[Al]=O.O=[Al]O[Al]=O.O=[Al]O[Al]=O KZHJGOXRZJKJNY-UHFFFAOYSA-N 0.000 claims description 4
- GQYHUHYESMUTHG-UHFFFAOYSA-N lithium niobate Chemical compound [Li+].[O-][Nb](=O)=O GQYHUHYESMUTHG-UHFFFAOYSA-N 0.000 claims description 4
- 239000000395 magnesium oxide Substances 0.000 claims description 4
- 229910052863 mullite Inorganic materials 0.000 claims description 4
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 4
- 239000000292 calcium oxide Substances 0.000 claims description 3
- 235000012255 calcium oxide Nutrition 0.000 claims description 3
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 claims description 3
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 3
- 239000000377 silicon dioxide Substances 0.000 claims description 3
- 238000004519 manufacturing process Methods 0.000 description 30
- 238000000034 method Methods 0.000 description 11
- 238000005245 sintering Methods 0.000 description 10
- 238000005336 cracking Methods 0.000 description 5
- 239000004020 conductor Substances 0.000 description 4
- 238000011156 evaluation Methods 0.000 description 4
- 238000000137 annealing Methods 0.000 description 3
- 230000017525 heat dissipation Effects 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 238000005259 measurement Methods 0.000 description 3
- 238000000465 moulding Methods 0.000 description 3
- 238000005498 polishing Methods 0.000 description 3
- 239000000843 powder Substances 0.000 description 3
- 238000010897 surface acoustic wave method Methods 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 244000126211 Hericium coralloides Species 0.000 description 2
- 229910020068 MgAl Inorganic materials 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000007517 polishing process Methods 0.000 description 2
- 229910052594 sapphire Inorganic materials 0.000 description 2
- 239000010980 sapphire Substances 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 1
- 229910002483 Cu Ka Inorganic materials 0.000 description 1
- 229910013641 LiNbO 3 Inorganic materials 0.000 description 1
- 229910010413 TiO 2 Inorganic materials 0.000 description 1
- 238000002441 X-ray diffraction Methods 0.000 description 1
- 230000002159 abnormal effect Effects 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 230000002238 attenuated effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- HJUFTIJOISQSKQ-UHFFFAOYSA-N fenoxycarb Chemical compound C1=CC(OCCNC(=O)OCC)=CC=C1OC1=CC=CC=C1 HJUFTIJOISQSKQ-UHFFFAOYSA-N 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000011835 investigation Methods 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 230000008719 thickening Effects 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02535—Details of surface acoustic wave devices
- H03H9/02818—Means for compensation or elimination of undesirable effects
- H03H9/02897—Means for compensation or elimination of undesirable effects of strain or mechanical damage, e.g. strain due to bending influence
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/01—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
- C04B35/44—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on aluminates
- C04B35/443—Magnesium aluminate spinel
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/08—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of resonators or networks using surface acoustic waves
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02535—Details of surface acoustic wave devices
- H03H9/02543—Characteristics of substrate, e.g. cutting angles
- H03H9/02559—Characteristics of substrate, e.g. cutting angles of lithium niobate or lithium-tantalate substrates
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02535—Details of surface acoustic wave devices
- H03H9/02543—Characteristics of substrate, e.g. cutting angles
- H03H9/02574—Characteristics of substrate, e.g. cutting angles of combined substrates, multilayered substrates, piezoelectrical layers on not-piezoelectrical substrate
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/25—Constructional features of resonators using surface acoustic waves
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/01—Manufacture or treatment
- H10N30/06—Forming electrodes or interconnections, e.g. leads or terminals
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/01—Manufacture or treatment
- H10N30/07—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base
- H10N30/072—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by laminating or bonding of piezoelectric or electrostrictive bodies
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/01—Manufacture or treatment
- H10N30/08—Shaping or machining of piezoelectric or electrostrictive bodies
- H10N30/085—Shaping or machining of piezoelectric or electrostrictive bodies by machining
- H10N30/086—Shaping or machining of piezoelectric or electrostrictive bodies by machining by polishing or grinding
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/80—Constructional details
- H10N30/85—Piezoelectric or electrostrictive active materials
- H10N30/853—Ceramic compositions
- H10N30/8542—Alkali metal based oxides, e.g. lithium, sodium or potassium niobates
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- Physics & Mathematics (AREA)
- Acoustics & Sound (AREA)
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Materials Engineering (AREA)
- Structural Engineering (AREA)
- Organic Chemistry (AREA)
- Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
Abstract
Description
本出願は、2017年10月12日出願の日本出願第2017−198778号に基づく優先権を主張し、上記日本出願に記載された全ての記載内容を援用するものである。
本発明者らの検討によれば、セラミック基板を用いた従来の技術では、SAWデバイスの製造プロセスにおいてセラミック基板に割れが発生する場合がある。割れの発生は、SAWデバイスの製造における歩留りを悪化させる原因となる。
本開示のセラミック基板によれば、SAWデバイスの製造プロセスにおける割れの発生を抑制することが可能なセラミック基板を提供することができる。
最初に本開示の実施態様を列記して説明する。本開示のセラミック基板は、多結晶セラミックから構成され、支持主面を有するセラミック基板である。このセラミック基板は、支持主面において、多結晶セラミックの結晶粒径の、平均値が0.5μm以上15μm未満であり、標準偏差が上記平均値の1.5倍未満である。
次に、本開示のセラミック基板および積層体の一実施の形態を、以下に図面を参照しつつ説明する。なお、以下の図面において同一または相当する部分には同一の参照番号を付しその説明は繰返さない。
20 圧電体基板、21 露出主面、22 結合主面
30 入力側電極、31 第1部分、31A ベース部、31B 突出部
32 第2部分、32A ベース部、32B 突出部
40 出力側電極、41 第1部分、41A ベース部、41B 突出部
42 第2部分、42A ベース部、42B 突出部
51 入力側配線、61 出力側配線
100 SAWデバイス
Claims (8)
- 多結晶セラミックから構成され、支持主面を有するセラミック基板であって、
前記支持主面において、前記多結晶セラミックの結晶粒径の、
平均値が0.5μm以上15μm未満であり、
標準偏差が前記平均値の1.5倍未満である、セラミック基板。 - 前記支持主面における残留応力の値が−300MPa以上300MPa以下である、請求項1に記載のセラミック基板。
- スピネル、アルミナ、マグネシア、シリカ、ムライト、コージェライト、カルシア、チタニア、窒化珪素、窒化アルミニウムおよび炭化珪素からなる群から選択される1種以上の材料から構成される、請求項1または請求項2に記載のセラミック基板。
- 前記多結晶セラミックが、スピネルから構成される、請求項1または請求項2に記載のセラミック基板。
- 前記支持主面における残留応力の値が−300MPa以上300MPa以下であり、
前記多結晶セラミックが、スピネルから構成される、請求項1に記載のセラミック基板。 - 請求項1〜請求項5のいずれか1項に記載のセラミック基板と、
圧電体からなり、結合主面を有する圧電体基板と、を備え、
前記セラミック基板の前記支持主面と前記圧電体基板の前記結合主面がファンデルワールス力により結合されている、積層体。 - 前記圧電体基板は、タンタル酸リチウムまたはニオブ酸リチウムからなる、請求項6に記載の積層体。
- 請求項6または請求項7に記載の積層体と、
前記圧電体基板の前記セラミック基板とは反対側の主面上に形成される電極と、を備える、SAWデバイス。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2017198778 | 2017-10-12 | ||
JP2017198778 | 2017-10-12 | ||
PCT/JP2018/034960 WO2019073781A1 (ja) | 2017-10-12 | 2018-09-21 | セラミック基板、積層体およびsawデバイス |
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JPWO2019073781A1 true JPWO2019073781A1 (ja) | 2020-09-24 |
JP7180607B2 JP7180607B2 (ja) | 2022-11-30 |
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JP2019548100A Active JP7180607B2 (ja) | 2017-10-12 | 2018-09-21 | セラミック基板、積層体およびsawデバイス |
Country Status (5)
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US (1) | US11750171B2 (ja) |
JP (1) | JP7180607B2 (ja) |
CN (2) | CN115333501A (ja) |
TW (1) | TW201925137A (ja) |
WO (1) | WO2019073781A1 (ja) |
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JP2001220227A (ja) * | 2000-01-31 | 2001-08-14 | Kyocera Corp | ダイヤフラム基板 |
JP2009023908A (ja) * | 2000-12-04 | 2009-02-05 | Toshiba Corp | 薄膜基板の製造方法 |
JP2016100729A (ja) * | 2014-11-20 | 2016-05-30 | 太陽誘電株式会社 | 弾性波デバイスの製造方法 |
WO2016208766A1 (ja) * | 2015-06-26 | 2016-12-29 | 京セラ株式会社 | セラミック基板およびこれを用いた実装用基板ならびに電子装置 |
JP2017095333A (ja) * | 2015-11-27 | 2017-06-01 | 株式会社ニッカトー | 高温特性及び耐食性に優れたアルミナ焼結体 |
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JPH10316466A (ja) | 1997-05-19 | 1998-12-02 | Toshiba Ceramics Co Ltd | 透光性アルミナセラミックス |
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JP2019067861A (ja) * | 2017-09-29 | 2019-04-25 | セイコーエプソン株式会社 | 圧電アクチュエーター、圧電駆動装置、ロボット、電子部品搬送装置およびプリンター |
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2018
- 2018-09-21 US US16/754,811 patent/US11750171B2/en active Active
- 2018-09-21 JP JP2019548100A patent/JP7180607B2/ja active Active
- 2018-09-21 CN CN202210949180.2A patent/CN115333501A/zh active Pending
- 2018-09-21 WO PCT/JP2018/034960 patent/WO2019073781A1/ja active Application Filing
- 2018-09-21 CN CN201880065201.6A patent/CN111194299A/zh active Pending
- 2018-10-05 TW TW107135204A patent/TW201925137A/zh unknown
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JP2001220227A (ja) * | 2000-01-31 | 2001-08-14 | Kyocera Corp | ダイヤフラム基板 |
JP2009023908A (ja) * | 2000-12-04 | 2009-02-05 | Toshiba Corp | 薄膜基板の製造方法 |
JP2016100729A (ja) * | 2014-11-20 | 2016-05-30 | 太陽誘電株式会社 | 弾性波デバイスの製造方法 |
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JP7180607B2 (ja) | 2022-11-30 |
WO2019073781A1 (ja) | 2019-04-18 |
US20210104999A1 (en) | 2021-04-08 |
TW201925137A (zh) | 2019-07-01 |
CN115333501A (zh) | 2022-11-11 |
CN111194299A (zh) | 2020-05-22 |
US11750171B2 (en) | 2023-09-05 |
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