JPWO2018199060A1 - セラミックス回路基板及びその製造方法とそれを用いたモジュール - Google Patents
セラミックス回路基板及びその製造方法とそれを用いたモジュール Download PDFInfo
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Abstract
Description
(1)セラミックス基板と銅板が、Ag、Cu及び活性金属を含むろう材を介して接合してなるセラミックス回路基板において、接合ボイド率が1.0%以下であり、ろう材成分であるAgの拡散距離が5〜20μmであるセラミックス回路基板。
(2)セラミックス基板が窒化ケイ素または窒化アルミニウムからなる前記(1)に記載のセラミックス回路基板。
(3)ろう材にSnが含まれることを特徴とする前記(1)または(2)に記載のセラミックス回路基板。
(4)接合温度への昇温過程における400℃〜700℃の温度域での加熱時間が5〜30分であり、接合温度720〜800℃で5〜30分保持して接合することを特徴とする前記(1)〜(3)のいずれか一項に記載のセラミックス回路基板の製造方法。
(5)窒素雰囲気下の連続加熱炉で接合することを特徴とする前記(4)に記載のセラミックス回路基板の製造方法。
(6)前記(1)〜(3)のいずれか一項に記載のセラミックス回路基板を用いるパワーモジュール。
2 セラミックス基板表面
3 Ag
4 銅板
5 Agの拡散距離
厚み0.32mmの窒化ケイ素基板に、Ag粉末(福田金属箔粉工業社製「AgC−BO」)88質量部及びCu粉末(福田金属箔粉工業社製「SRC−Cu−20」)12質量部の合計100質量部に対して、TiH2粉末(大阪チタニウムテクノロジーズ社製「TSH−350」)を2.5質量部、Sn粉末(三津和薬品化学社製「すず粉末(−325mesh)」)を4質量部混合したろう材ペーストを塗布量8mg/cm2となるようにロールコーターで塗布した。その後、窒化ケイ素基板の一方の面に回路形成用銅板を、他方の面に放熱板形成用銅板(いずれも厚み0.8mmの無酸素銅板)を重ね、窒素雰囲気下のローラー搬送式連続加熱炉(開口部寸法W500mm×H70mm、炉長3m)へ投入した。搬送速度は10cm/分とし、表1に示す接合条件となるようにヒーターの設定温度を調整して窒化ケイ素基板と銅板を接合した。接合した銅板にエッチングレジストを印刷し、塩化第二銅溶液でエッチングして回路パターンを形成した。さらにフッ化アンモニウム/過酸化水素溶液でろう材層、窒化物層を除去した。
(1)接合ボイド率:超音波探傷装置(日立エンジニアリングFS300−3)で観察されるセラミックス回路基板の接合ボイドの面積を計測し、銅回路パターンの面積で除して算出した。
(2)Agの拡散距離:セラミックス回路基板を切断し、樹脂包埋及び断面研磨を行った後、走査型電子顕微鏡にて倍率500倍で無作為に任意の視野(接合界面の水平方向に250μmの範囲)3箇所の反射電子像を撮影し、セラミックス基板表面と、銅板中で最も銅板表面に近いAgの位置の間の最短距離を測定した。
(3)熱サイクル後のクラック率:セラミックス回路基板を、ホットプレート上350℃にて5分、25℃にて5分、ドライアイス中で−78℃にて5分、25℃にて5分保持を1サイクルとする熱サイクルを連続で10サイクル実施した。その後、銅板、ろう材層及び窒化物層をエッチングにて除去し、セラミックス基板の表面に発生した水平クラックをスキャナーにより600dpi×600dpiの解像度で取り込み、画像解析ソフトGIMP2(閾値140)にて二値化し算出した後、水平クラック面積を回路パターン面積で除して算出した。
接合雰囲気、400℃〜700℃の温度域での加熱時間、接合温度、保持時間を表1に示すように変えたこと以外は実施例1と同様にしてセラミックス回路基板を得た。測定結果を表1に示す。
Sn粉末を添加しないことと、接合温度と保持時間を表1に示すように変えたこと以外は実施例1と同様にしてセラミックス回路基板を得た。測定結果を表1に示す。
TiH2粉末の添加量を1.0質量部に変えたことと、400℃〜700℃の温度域での加熱時間を表1に示すように変えたこと以外は実施例1と同様にしてセラミックス回路基板を得た。測定結果を表1に示す。
従来の真空雰囲気のバッチ炉での接合条件にて接合したこと以外は実施例と同様にしてセラミックス回路基板を得た。測定結果を表1に示す。
TiH2粉末を添加しないこと以外は実施例1と同様にしてセラミックス回路基板を得た。
測定結果を表1に示す。
Claims (6)
- セラミックス基板と銅板が、Ag、Cu及び活性金属を含むろう材を介して接合してなるセラミックス回路基板において、接合ボイド率が1.0%以下であり、ろう材成分であるAgの拡散距離が5〜20μmであるセラミックス回路基板。
- セラミックス基板が窒化ケイ素または窒化アルミニウムからなる請求項1に記載のセラミックス回路基板。
- ろう材にSnが含まれることを特徴とする請求項1または請求項2に記載のセラミックス回路基板。
- 接合温度への昇温過程における400℃〜700℃の温度域での加熱時間が5〜30分であり、接合温度720〜800℃で5〜30分保持して接合することを特徴とする請求項1〜3のいずれか一項に記載のセラミックス回路基板の製造方法。
- 窒素雰囲気下の連続加熱炉で接合することを特徴とする請求項4に記載のセラミックス回路基板の製造方法。
- 請求項1〜3のいずれか一項に記載のセラミックス回路基板を用いるパワーモジュール。
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JP2017086504 | 2017-04-25 | ||
PCT/JP2018/016540 WO2018199060A1 (ja) | 2017-04-25 | 2018-04-24 | セラミックス回路基板及びその製造方法とそれを用いたモジュール |
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EP (1) | EP3618107A4 (ja) |
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JP6870767B2 (ja) * | 2019-09-02 | 2021-05-12 | 三菱マテリアル株式会社 | 銅/セラミックス接合体、及び、絶縁回路基板 |
WO2021111508A1 (ja) * | 2019-12-03 | 2021-06-10 | 日本碍子株式会社 | 接合基板及び接合基板の製造方法 |
KR20220131242A (ko) * | 2020-01-23 | 2022-09-27 | 덴카 주식회사 | 세라믹스-구리 복합체, 및 세라믹스-구리 복합체의 제조 방법 |
CN114867579A (zh) | 2020-02-17 | 2022-08-05 | 株式会社东芝 | 钎料、接合体、陶瓷电路基板及接合体的制造方法 |
EP4124184A4 (en) | 2020-03-18 | 2024-04-17 | Toshiba Kk | LAMINATE, CERAMIC-COPPER CIRCUIT BOARD, METHOD FOR PRODUCING A LAMINATE AND METHOD FOR PRODUCING A CERAMIC-COPPER CIRCUIT BOARD |
WO2021235387A1 (ja) * | 2020-05-20 | 2021-11-25 | 株式会社 東芝 | 接合体、セラミックス銅回路基板、及び半導体装置 |
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JP2022020925A (ja) * | 2020-07-21 | 2022-02-02 | 日本特殊陶業株式会社 | 配線基板 |
WO2022024990A1 (ja) | 2020-07-27 | 2022-02-03 | 株式会社 東芝 | 接合体、回路基板、半導体装置、及び接合体の製造方法 |
WO2022024832A1 (ja) | 2020-07-27 | 2022-02-03 | 株式会社 東芝 | 接合体、回路基板、半導体装置、及び接合体の製造方法 |
CN115989579A (zh) | 2020-10-07 | 2023-04-18 | 株式会社东芝 | 接合体、陶瓷电路基板及半导体装置 |
CN112679220A (zh) * | 2020-12-30 | 2021-04-20 | 中国电子科技集团公司第十三研究所 | 氮化硅陶瓷覆铜基板及其制备方法 |
EP4342614A1 (en) * | 2021-05-19 | 2024-03-27 | Kabushiki Kaisha Toshiba | Bonded object production method and production method for ceramic circuit substrate using same |
EP4112586A1 (de) * | 2021-06-29 | 2023-01-04 | Heraeus Deutschland GmbH & Co. KG | Verfahren zur herstellung eines metall-keramik-substrats mittels einem durchlaufofen |
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JPH11157952A (ja) * | 1997-11-27 | 1999-06-15 | Denki Kagaku Kogyo Kk | 接合体の製造方法 |
JP2002274964A (ja) * | 2001-03-13 | 2002-09-25 | Denki Kagaku Kogyo Kk | 接合体の製造方法 |
JP2014090144A (ja) * | 2012-10-31 | 2014-05-15 | Denki Kagaku Kogyo Kk | セラミック回路基板および製造方法 |
JP2016169111A (ja) * | 2015-03-11 | 2016-09-23 | デンカ株式会社 | セラミックス回路基板 |
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EP3618107A4 (en) | 2020-04-08 |
CN110537256A (zh) | 2019-12-03 |
EP3618107A1 (en) | 2020-03-04 |
US20200128664A1 (en) | 2020-04-23 |
KR102516917B1 (ko) | 2023-03-31 |
KR20200004799A (ko) | 2020-01-14 |
JP7144405B2 (ja) | 2022-09-29 |
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