JPWO2018092448A1 - クロロシランポリマーの安定化方法 - Google Patents
クロロシランポリマーの安定化方法 Download PDFInfo
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- JPWO2018092448A1 JPWO2018092448A1 JP2018551065A JP2018551065A JPWO2018092448A1 JP WO2018092448 A1 JPWO2018092448 A1 JP WO2018092448A1 JP 2018551065 A JP2018551065 A JP 2018551065A JP 2018551065 A JP2018551065 A JP 2018551065A JP WO2018092448 A1 JPWO2018092448 A1 JP WO2018092448A1
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- chlorosilane
- chlorosilane polymer
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- alkoxide
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- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/08—Compounds containing halogen
- C01B33/107—Halogenated silanes
- C01B33/10778—Purification
- C01B33/10794—Purification by forming addition compounds or complexes, the reactant being possibly contained in an adsorbent
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- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/02—Silicon
- C01B33/021—Preparation
- C01B33/027—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material
- C01B33/03—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material by decomposition of silicon halides or halosilanes or reduction thereof with hydrogen as the only reducing agent
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- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/08—Compounds containing halogen
- C01B33/107—Halogenated silanes
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- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/08—Compounds containing halogen
- C01B33/107—Halogenated silanes
- C01B33/1071—Tetrachloride, trichlorosilane or silicochloroform, dichlorosilane, monochlorosilane or mixtures thereof
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- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/113—Silicon oxides; Hydrates thereof
- C01B33/12—Silica; Hydrates thereof, e.g. lepidoic silicic acid
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/24—Deposition of silicon only
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/32—Carbides
- C23C16/325—Silicon carbide
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
- C23C16/4405—Cleaning of reactor or parts inside the reactor by using reactive gases
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4412—Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/56—After-treatment
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- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Silicon Compounds (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
Description
(SiCl2)n+2nH2O→nSiO2+2nHCl+nH2 ・・・ (A)
(SiCl2)n+4nROH→nSi(OR)4+2nHCl+nH2 ・・・ (1)
Si(OR)4+2H2O→SiO2+4ROH ・・・ (2)
CH3SiCl3+H2→SiC+3HCl+H2 ・・・ (3)
(SiCl2)n+4nEtOH→nSi(OEt)4+2nHCl+nH2 ・・・ (4)
Si(OEt)4+2H2O→SiO2+4EtOH ・・・ (5)
上記の実施例1、2と比較するため、クロロシランポリマーをアルコールで希釈することなく加水分解により処理する例を示す。図5に、比較例1の各工程における模式図を示す。
比較例2として、配管に堆積したクロロシランポリマーをアルコールで希釈することなく水蒸気の導入により加水分解で処理する実施例を示す。(特許文献2を参照)
Claims (5)
- クロロシラン系ガスを利用した化学気相堆積法の工程において副次的に発生したクロロシランポリマーを安定化する方法であって、
クロロシランポリマーにアルコールを接触させてアルコキシド、塩化水素及び水素に分解してアルコール中に希釈する工程と、
前記アルコキシドを加水分解する工程と
を含む方法。 - 前記化学気相堆積法の工程は、炭化ケイ素、ケイ素及びケイ素化合物の少なくとも一つを堆積させる請求項1に記載の方法。
- 前記クロロシラン系ガスは、メチルトリクロロシラン及びトリクロロシランの少なくとも一つを含む請求項1又は2に記載の方法。
- 前記アルコールは、ブタノール以下の低級アルコールを含む請求項1又は2に記載の方法。
- 前記アルコキシドは、テトラエトキシシランを含む請求項1又は2に記載の方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2016222956 | 2016-11-16 | ||
JP2016222956 | 2016-11-16 | ||
PCT/JP2017/035981 WO2018092448A1 (ja) | 2016-11-16 | 2017-10-03 | クロロシランポリマーの安定化方法 |
Publications (2)
Publication Number | Publication Date |
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JPWO2018092448A1 true JPWO2018092448A1 (ja) | 2019-06-27 |
JP6737343B2 JP6737343B2 (ja) | 2020-08-05 |
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JP2018551065A Active JP6737343B2 (ja) | 2016-11-16 | 2017-10-03 | クロロシランポリマーの安定化方法 |
Country Status (7)
Country | Link |
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US (1) | US11319212B2 (ja) |
EP (1) | EP3543211B1 (ja) |
JP (1) | JP6737343B2 (ja) |
CN (1) | CN109641754A (ja) |
CA (1) | CA3039034C (ja) |
RU (1) | RU2722027C1 (ja) |
WO (1) | WO2018092448A1 (ja) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
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CN111996592A (zh) * | 2020-09-03 | 2020-11-27 | 西安奕斯伟硅片技术有限公司 | 硅片外延生长的反应尾气的排出装置、系统及方法 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS645904A (en) * | 1987-06-29 | 1989-01-10 | Mitsubishi Metal Corp | Method for hydrolyzing silicon chloride |
JPS6475493A (en) * | 1987-09-16 | 1989-03-22 | Shinetsu Chemical Co | Method for treating product having high boiling point in production of organohalosilane |
JPH11180713A (ja) * | 1997-12-22 | 1999-07-06 | Tokuyama Corp | 塩化珪素含有物の加水分解方法 |
JP2016013965A (ja) * | 2014-06-11 | 2016-01-28 | 三菱マテリアル株式会社 | 固体クロロシランポリマーの無害化方法 |
Family Cites Families (13)
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JPS4937998B1 (ja) | 1969-12-12 | 1974-10-14 | ||
JPH04124011A (ja) * | 1990-09-12 | 1992-04-24 | Toagosei Chem Ind Co Ltd | ポリクロロシラン類の処理方法 |
US6042654A (en) | 1998-01-13 | 2000-03-28 | Applied Materials, Inc. | Method of cleaning CVD cold-wall chamber and exhaust lines |
JP4124011B2 (ja) * | 2003-04-24 | 2008-07-23 | 住友金属工業株式会社 | 熱風炉燃焼室バーナー部の煉瓦積み替え時における保熱方法および装置 |
DE102004010055A1 (de) | 2004-03-02 | 2005-09-22 | Degussa Ag | Verfahren zur Herstellung von Silicium |
KR101341360B1 (ko) | 2006-03-07 | 2013-12-13 | 도아고세이가부시키가이샤 | Hcd 가스의 제해방법과 제해장치 |
CN101284843A (zh) * | 2007-04-10 | 2008-10-15 | 德古萨有限责任公司 | 用于制备通式R(4-m-n)AClmHn,特别是硅烷的化合物或高纯化合物的方法和装置 |
RU2344993C1 (ru) * | 2007-04-19 | 2009-01-27 | Федеральное государственное унитарное предприятие "Горно-химический комбинат" | Способ вывода полисиланхлоридов из парогазовой смеси, отходящей от установок водородного восстановления кремния, и устройство для его осуществления |
JP5316290B2 (ja) * | 2008-08-05 | 2013-10-16 | 三菱マテリアル株式会社 | トリクロロシラン製造装置及び製造方法 |
JP5710308B2 (ja) | 2011-02-17 | 2015-04-30 | メルクパフォーマンスマテリアルズIp合同会社 | 二酸化ケイ素膜の製造方法 |
WO2014054843A1 (en) | 2012-10-02 | 2014-04-10 | Oci Company Ltd. | Method for preparing monosilane by using trialkoxysilane |
JP2016013966A (ja) | 2014-06-11 | 2016-01-28 | 三菱マテリアル株式会社 | クロロシランポリマー類の安定化方法 |
JP6655599B2 (ja) * | 2014-07-22 | 2020-02-26 | モメンティブ パフォーマンス マテリアルズ ゲーエムベーハーMomentive Performance Materials GmbH | モノ−、ポリ−および/またはオリゴシランにおけるケイ素−ケイ素結合および/またはケイ素−塩素結合の開裂方法 |
-
2017
- 2017-10-03 CA CA3039034A patent/CA3039034C/en active Active
- 2017-10-03 JP JP2018551065A patent/JP6737343B2/ja active Active
- 2017-10-03 WO PCT/JP2017/035981 patent/WO2018092448A1/ja unknown
- 2017-10-03 CN CN201780051456.2A patent/CN109641754A/zh active Pending
- 2017-10-03 RU RU2019118081A patent/RU2722027C1/ru active
- 2017-10-03 EP EP17872766.5A patent/EP3543211B1/en active Active
-
2019
- 2019-02-22 US US16/282,413 patent/US11319212B2/en active Active
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS645904A (en) * | 1987-06-29 | 1989-01-10 | Mitsubishi Metal Corp | Method for hydrolyzing silicon chloride |
JPS6475493A (en) * | 1987-09-16 | 1989-03-22 | Shinetsu Chemical Co | Method for treating product having high boiling point in production of organohalosilane |
JPH11180713A (ja) * | 1997-12-22 | 1999-07-06 | Tokuyama Corp | 塩化珪素含有物の加水分解方法 |
JP2016013965A (ja) * | 2014-06-11 | 2016-01-28 | 三菱マテリアル株式会社 | 固体クロロシランポリマーの無害化方法 |
Also Published As
Publication number | Publication date |
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JP6737343B2 (ja) | 2020-08-05 |
US20190256362A1 (en) | 2019-08-22 |
WO2018092448A1 (ja) | 2018-05-24 |
EP3543211A4 (en) | 2020-09-09 |
CA3039034A1 (en) | 2018-05-24 |
EP3543211B1 (en) | 2022-04-20 |
EP3543211A1 (en) | 2019-09-25 |
RU2722027C1 (ru) | 2020-05-26 |
CN109641754A (zh) | 2019-04-16 |
US11319212B2 (en) | 2022-05-03 |
CA3039034C (en) | 2021-03-09 |
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