JPWO2018051522A1 - 立体構造体 - Google Patents
立体構造体 Download PDFInfo
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- JPWO2018051522A1 JPWO2018051522A1 JP2018539495A JP2018539495A JPWO2018051522A1 JP WO2018051522 A1 JPWO2018051522 A1 JP WO2018051522A1 JP 2018539495 A JP2018539495 A JP 2018539495A JP 2018539495 A JP2018539495 A JP 2018539495A JP WO2018051522 A1 JPWO2018051522 A1 JP WO2018051522A1
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- 239000011800 void material Substances 0.000 claims description 32
- 230000015572 biosynthetic process Effects 0.000 claims description 12
- 230000002829 reductive effect Effects 0.000 claims description 8
- 239000004020 conductor Substances 0.000 claims description 3
- 239000011148 porous material Substances 0.000 abstract 1
- 238000005530 etching Methods 0.000 description 54
- 239000003990 capacitor Substances 0.000 description 32
- 239000000463 material Substances 0.000 description 27
- 239000002585 base Substances 0.000 description 22
- 239000000758 substrate Substances 0.000 description 22
- 239000010410 layer Substances 0.000 description 19
- 230000000873 masking effect Effects 0.000 description 18
- BZHJMEDXRYGGRV-UHFFFAOYSA-N Vinyl chloride Chemical compound ClC=C BZHJMEDXRYGGRV-UHFFFAOYSA-N 0.000 description 17
- 230000000052 comparative effect Effects 0.000 description 17
- 239000002344 surface layer Substances 0.000 description 16
- 238000012986 modification Methods 0.000 description 15
- 230000004048 modification Effects 0.000 description 15
- 239000000243 solution Substances 0.000 description 15
- 239000003054 catalyst Substances 0.000 description 13
- 239000007864 aqueous solution Substances 0.000 description 12
- 238000000034 method Methods 0.000 description 12
- 239000003792 electrolyte Substances 0.000 description 11
- 229910052782 aluminium Inorganic materials 0.000 description 10
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 10
- 238000005452 bending Methods 0.000 description 10
- 239000007784 solid electrolyte Substances 0.000 description 10
- 229910052751 metal Inorganic materials 0.000 description 8
- 239000002184 metal Substances 0.000 description 8
- 230000003647 oxidation Effects 0.000 description 7
- 238000007254 oxidation reaction Methods 0.000 description 7
- 239000002245 particle Substances 0.000 description 7
- 238000005245 sintering Methods 0.000 description 7
- 230000003197 catalytic effect Effects 0.000 description 6
- 239000008151 electrolyte solution Substances 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 6
- 238000005259 measurement Methods 0.000 description 6
- 238000007740 vapor deposition Methods 0.000 description 6
- 238000010030 laminating Methods 0.000 description 5
- 230000002093 peripheral effect Effects 0.000 description 5
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 4
- 239000000203 mixture Substances 0.000 description 4
- FLDCSPABIQBYKP-UHFFFAOYSA-N 5-chloro-1,2-dimethylbenzimidazole Chemical compound ClC1=CC=C2N(C)C(C)=NC2=C1 FLDCSPABIQBYKP-UHFFFAOYSA-N 0.000 description 3
- 239000001741 Ammonium adipate Substances 0.000 description 3
- 229920002430 Fibre-reinforced plastic Polymers 0.000 description 3
- 238000010306 acid treatment Methods 0.000 description 3
- 235000019293 ammonium adipate Nutrition 0.000 description 3
- 238000009826 distribution Methods 0.000 description 3
- 239000011151 fibre-reinforced plastic Substances 0.000 description 3
- 238000007789 sealing Methods 0.000 description 3
- WYXIGTJNYDDFFH-UHFFFAOYSA-Q triazanium;borate Chemical compound [NH4+].[NH4+].[NH4+].[O-]B([O-])[O-] WYXIGTJNYDDFFH-UHFFFAOYSA-Q 0.000 description 3
- YEJRWHAVMIAJKC-UHFFFAOYSA-N 4-Butyrolactone Chemical compound O=C1CCCO1 YEJRWHAVMIAJKC-UHFFFAOYSA-N 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- VSCWAEJMTAWNJL-UHFFFAOYSA-K aluminium trichloride Chemical compound Cl[Al](Cl)Cl VSCWAEJMTAWNJL-UHFFFAOYSA-K 0.000 description 2
- 238000007743 anodising Methods 0.000 description 2
- 238000001354 calcination Methods 0.000 description 2
- 238000006555 catalytic reaction Methods 0.000 description 2
- 238000003486 chemical etching Methods 0.000 description 2
- 238000005520 cutting process Methods 0.000 description 2
- 238000005238 degreasing Methods 0.000 description 2
- 238000011156 evaluation Methods 0.000 description 2
- 239000011888 foil Substances 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 230000036961 partial effect Effects 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 238000006116 polymerization reaction Methods 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 238000003892 spreading Methods 0.000 description 2
- 238000003466 welding Methods 0.000 description 2
- 239000004254 Ammonium phosphate Substances 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 229920000298 Cellophane Polymers 0.000 description 1
- 108010003272 Hyaluronate lyase Proteins 0.000 description 1
- 239000002202 Polyethylene glycol Substances 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 230000002159 abnormal effect Effects 0.000 description 1
- 230000002378 acidificating effect Effects 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910000148 ammonium phosphate Inorganic materials 0.000 description 1
- 235000019289 ammonium phosphates Nutrition 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 239000000460 chlorine Substances 0.000 description 1
- -1 chlorine ions Chemical class 0.000 description 1
- 229920001940 conductive polymer Polymers 0.000 description 1
- 230000006378 damage Effects 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- MNNHAPBLZZVQHP-UHFFFAOYSA-N diammonium hydrogen phosphate Chemical compound [NH4+].[NH4+].OP([O-])([O-])=O MNNHAPBLZZVQHP-UHFFFAOYSA-N 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 238000004090 dissolution Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000036571 hydration Effects 0.000 description 1
- 238000006703 hydration reaction Methods 0.000 description 1
- 238000005470 impregnation Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 239000008204 material by function Substances 0.000 description 1
- 229910021645 metal ion Inorganic materials 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- 239000010955 niobium Substances 0.000 description 1
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 1
- 239000008188 pellet Substances 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229920000767 polyaniline Polymers 0.000 description 1
- 229920001223 polyethylene glycol Polymers 0.000 description 1
- 229920000414 polyfuran Polymers 0.000 description 1
- 229920000128 polypyrrole Polymers 0.000 description 1
- 229920000123 polythiophene Polymers 0.000 description 1
- 239000004800 polyvinyl chloride Substances 0.000 description 1
- 229920000915 polyvinyl chloride Polymers 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
- H01G9/004—Details
- H01G9/04—Electrodes or formation of dielectric layers thereon
- H01G9/048—Electrodes or formation of dielectric layers thereon characterised by their structure
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J21/00—Catalysts comprising the elements, oxides, or hydroxides of magnesium, boron, aluminium, carbon, silicon, titanium, zirconium, or hafnium
- B01J21/02—Boron or aluminium; Oxides or hydroxides thereof
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J23/00—Catalysts comprising metals or metal oxides or hydroxides, not provided for in group B01J21/00
- B01J23/38—Catalysts comprising metals or metal oxides or hydroxides, not provided for in group B01J21/00 of noble metals
- B01J23/40—Catalysts comprising metals or metal oxides or hydroxides, not provided for in group B01J21/00 of noble metals of the platinum group metals
- B01J23/42—Platinum
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J35/00—Catalysts, in general, characterised by their form or physical properties
- B01J35/30—Catalysts, in general, characterised by their form or physical properties characterised by their physical properties
- B01J35/396—Distribution of the active metal ingredient
- B01J35/397—Egg shell like
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J35/00—Catalysts, in general, characterised by their form or physical properties
- B01J35/50—Catalysts, in general, characterised by their form or physical properties characterised by their shape or configuration
- B01J35/51—Spheres
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J35/00—Catalysts, in general, characterised by their form or physical properties
- B01J35/50—Catalysts, in general, characterised by their form or physical properties characterised by their shape or configuration
- B01J35/56—Foraminous structures having flow-through passages or channels, e.g. grids or three-dimensional monoliths
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J35/00—Catalysts, in general, characterised by their form or physical properties
- B01J35/50—Catalysts, in general, characterised by their form or physical properties characterised by their shape or configuration
- B01J35/58—Fabrics or filaments
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J37/00—Processes, in general, for preparing catalysts; Processes, in general, for activation of catalysts
- B01J37/34—Irradiation by, or application of, electric, magnetic or wave energy, e.g. ultrasonic waves ; Ionic sputtering; Flame or plasma spraying; Particle radiation
- B01J37/348—Electrochemical processes, e.g. electrochemical deposition or anodisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
- H01G9/004—Details
- H01G9/008—Terminals
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
- H01G9/004—Details
- H01G9/008—Terminals
- H01G9/012—Terminals specially adapted for solid capacitors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
- H01G9/004—Details
- H01G9/04—Electrodes or formation of dielectric layers thereon
- H01G9/042—Electrodes or formation of dielectric layers thereon characterised by the material
- H01G9/045—Electrodes or formation of dielectric layers thereon characterised by the material based on aluminium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
- H01G9/004—Details
- H01G9/04—Electrodes or formation of dielectric layers thereon
- H01G9/048—Electrodes or formation of dielectric layers thereon characterised by their structure
- H01G9/052—Sintered electrodes
- H01G9/0525—Powder therefor
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
- H01G9/004—Details
- H01G9/04—Electrodes or formation of dielectric layers thereon
- H01G9/048—Electrodes or formation of dielectric layers thereon characterised by their structure
- H01G9/055—Etched foil electrodes
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- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
- H01G9/004—Details
- H01G9/04—Electrodes or formation of dielectric layers thereon
- H01G9/042—Electrodes or formation of dielectric layers thereon characterised by the material
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
- H01G9/15—Solid electrolytic capacitors
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- Power Engineering (AREA)
- Materials Engineering (AREA)
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- Chemical Kinetics & Catalysis (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Electrochemistry (AREA)
- Health & Medical Sciences (AREA)
- Plasma & Fusion (AREA)
- Toxicology (AREA)
- ing And Chemical Polishing (AREA)
- Powder Metallurgy (AREA)
- Laminated Bodies (AREA)
- Catalysts (AREA)
- Secondary Cells (AREA)
Abstract
Description
以下、比較例および実施例に係る立体構造体の特性について検証した実験例について説明する。まず、立体構造体の各特性の評価方法について説明する。
図9は、立体構造体の多孔質部の単位面積当たりの空隙率を測定する方法を説明するための、立体構造体の横断面図である。
図5に示すように、立体構造体11の横断面をマイクロスコープにて撮像する。第1仮想形状13cと、立体構造体11の外形との間の間隔を、空隙形成領域の厚さとする。
測定周波数120HzのLCRメーターにて、立体構造体および基材の各々の静電容量を、アジピン酸アンモニウム水溶液中またはホウ酸アンモニウム水溶液中にて測定する。なお、拡面倍率の測定に用いる水溶液は、下記のように使い分けてもよい。立体構造体に誘電体層を陽極酸化によって形成する場合は、陽極酸化の際に用いる水溶液を拡面倍率の測定用の水溶液として用いる。誘電体層を陽極酸化以外の方法によって形成する場合に、誘電体層の形成厚さが薄いときはアジピン酸アンモニウム水溶液を、誘電体層の形成厚さが厚いときはホウ酸アンモニウム水溶液を、拡面倍率の測定用の水溶液として用いる。そして、基材の静電容量に対する立体構造体の静電容量の比率を求め、これを拡面倍率とする。
複数の立体構造体を横一列に約2mmの幅になるように並べて束ね、その長さ方向の両端を、厚さが1mmであるFRP(Fiber Reinforced Plastics)製の板にセロファンテープで貼って固定する。複数の立体構造体に、幅が3mm、厚さが0.12mm、ステンレス板に対する引き剥がし粘着力が450gf/15mmである塩化ビニルマスキングラインテープを貼り付ける。塩化ビニルマスキングラインテープを複数の立体構造体に貼り付ける際には、2kgfのローラが立体構造体の全長を2往復するように押し付ける。
立体構造体を20Vの印加電圧で陽極酸化した後、曲率半径の異なる丸棒に立体構造体を沿わせ、立体構造体が破断した時の丸棒の最大曲率半径を求める。この最大曲率半径が小さいほど、立体構造体の曲げ変形能が大きい。
(Z:インピーダンス、f:周波数、C:静電容量)
式1は、電解コンデンサをノイズフィルタとして用いた場合の、インピーダンス、周波数および静電容量の関係を示す式である。なお、式1においては、インダクタは考慮していない。式1から分かるように、電解コンデンサ6のインピーダンスは周波数が高いほど低くなるため、周波数が高い信号は信号ラインから離脱して、電解コンデンサ6に流れやすくなる。
Claims (5)
- 導電性材料を含有する立体構造体であって、
芯部と、
前記芯部の周囲に位置する多孔質部とを備え、
前記立体構造体の任意の横断面において、前記多孔質部の外縁から前記立体構造体の径の3/20だけ内側の位置より内側に位置する前記多孔質部の単位面積当たりの空隙率が80%以下である、立体構造体。 - 前記任意の横断面において、前記立体構造体の外形を相似状に縮小させた際に前記多孔質部の内縁と最初に接する第1仮想形状と、前記多孔質部の外縁との間の領域を、空隙形成領域と規定した場合、
前記任意の横断面において、前記多孔質部の外縁から前記立体構造体の径の1/20だけ内側の位置より内側に位置し、かつ、前記空隙形成領域に位置する、前記多孔質部の単位面積当たりの空隙率が15%以上80%以下である、請求項1に記載の立体構造体。 - 前記任意の横断面において、前記空隙形成領域に位置する前記多孔質部の単位面積当たりの空隙率が15%以上80%以下である、請求項2に記載の立体構造体。
- 前記任意の横断面において、前記多孔質部の外縁から前記立体構造体の径の1/20だけ内側の位置の外側の領域の少なくとも一部に、単位面積当たりの空隙率が80%より高い前記多孔質部が存在している、請求項2に記載の立体構造体。
- 前記任意の横断面において、前記立体構造体の外形を相似状に縮小させた際に前記多孔質部の内縁と最後に接する第2仮想形状と、前記第1仮想形状との間の間隔が、10μm以下である、請求項2から請求項4のいずれか1項に記載の立体構造体。
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PCT/JP2016/077596 WO2018051522A1 (ja) | 2016-09-16 | 2016-09-16 | 立体構造体 |
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JPWO2018051522A1 true JPWO2018051522A1 (ja) | 2019-07-18 |
JP6750179B2 JP6750179B2 (ja) | 2020-09-02 |
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US (1) | US10529497B2 (ja) |
EP (1) | EP3489976B1 (ja) |
JP (1) | JP6750179B2 (ja) |
KR (1) | KR102218601B1 (ja) |
CN (1) | CN109716467B (ja) |
TW (1) | TWI704589B (ja) |
WO (1) | WO2018051522A1 (ja) |
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WO2020174836A1 (ja) * | 2019-02-25 | 2020-09-03 | 株式会社村田製作所 | コンデンサ |
Citations (9)
Publication number | Priority date | Publication date | Assignee | Title |
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JPS57106112A (en) * | 1980-12-24 | 1982-07-01 | Nichicon Capacitor Ltd | Aluminum electrolytic condenser |
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US10529497B2 (en) | 2020-01-07 |
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TWI704589B (zh) | 2020-09-11 |
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