JPWO2017163843A1 - 誘電体組成物、誘電体素子、電子部品及び積層電子部品 - Google Patents
誘電体組成物、誘電体素子、電子部品及び積層電子部品 Download PDFInfo
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- JPWO2017163843A1 JPWO2017163843A1 JP2018507185A JP2018507185A JPWO2017163843A1 JP WO2017163843 A1 JPWO2017163843 A1 JP WO2017163843A1 JP 2018507185 A JP2018507185 A JP 2018507185A JP 2018507185 A JP2018507185 A JP 2018507185A JP WO2017163843 A1 JPWO2017163843 A1 JP WO2017163843A1
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Abstract
Description
また、揮発性の高いアルカリ金属を含むことにより、高温で熱処理を行う脱バインダ工程や焼成工程、再酸化工程で、誘電体組成物中にアルカリ金属に起因した格子欠陥が生成し易く、高い耐電圧が得られ難いという問題点があった。このため、前記特許文献1においては、高温領域において、高い比誘電率と高い耐電圧についての技術の開示はなされていない。
主成分が (Sr1.00−s−tBasCat)6.00−xRx(Ti1.00−aZra)x+2.00(Nb1.00−bTab)8.00−xO30.00で表され、
前記Rが
Y、La、Pr、Nd、Sm、Eu、Gd、Tb、Dy、Ho、Er、Tm、Yb、Luから選ばれる少なくとも一種の元素であり、
s、t、x、a、bが、0.50≦s≦1.00、0≦t≦0.50、0.50≦s+t≦1.00、0.50<x≦1.50、0.30≦a≦1.00、0≦b≦1.00を満たすタングステンブロンズ型複合酸化物である主成分を有することを特徴とする。
主成分が 化学式(Sr1.00−s−tBasCat)6.00−xRx(Ti1.00−aZra)x+2.00(Nb1.00−bTab)8.00−xO30.00で表され、
前記Rが
Y、La、Pr、Nd、Sm、Eu、Gd、Tb、Dy、Ho、Er、Tm、Yb、Luから選ばれる少なくとも一種の元素であり、
s、t、x、a、bが、0.50≦s≦1.00、0≦t≦0.50、0.50≦s+t≦1.00、0.50<x≦1.50、0.30≦a≦1.00、0≦b≦1.00を満たすタングステンブロンズ型複合酸化物である主成分を有することを特徴とする。
一方、xが0.50以下の場合やxが1.50より大きい場合、例えば、化学式Ba6Ti2Nb8O30や化学式Ba4La2Ti4Nb6O30等の複合酸化物では、高温負荷寿命が短くなってしまう。
積層セラミックコンデンサに対し、25℃及び200℃において、デジタルLCRメータ(YHP社製4284A)にて、周波数1kHz、入力信号レベル(測定電圧)1Vrmsの信号を入力し、静電容量Cを測定した。そして、比誘電率εs(単位なし)を、誘電体層の厚みと、有効電極面積と、測定の結果得られた静電容量Cとに基づき算出した。比誘電率は高いほうが好ましく、500以上を良好であると判断した。
積層セラミックコンデンサ試料に対し、180℃および200℃において、デジタル抵抗メータ(ADVANTEST社製R8340)にて、測定電圧30V、測定時間60秒の条件で絶縁抵抗を測定した。コンデンサ試料の電極面積および誘電体層の厚みから比抵抗の値を算出した。比抵抗は高いほうが好ましく1.00×1012Ωcm以上より好ましくは9.00×1012Ωcm以上を良好であると判断した。比抵抗が低いとコンデンサとしては漏れ電流が大きくなり、電気回路において誤動作を起こしてしまう。
積層セラミックコンデンサ試料に対し、180℃および200℃において、100V/sec昇圧速度で直流電圧を印加し、漏れ電流が10mAを超えたところを直流耐電圧とした。直流耐電圧は高い方が好ましく、150V/μm以上、より好ましくは160V/μm以上、さらに好ましくは175V/μm以上を良好であると判断した。
積層セラミックコンデンサ試料に対し、250℃において、40V/μmの直流電圧を印加し、絶縁抵抗が1ケタ劣化するまでの時間を高温負荷寿命とした。高温負荷寿命は長い方が好ましく、30時間以上、より好ましくは40時間以上を良好であると判断した。
(比較例)
2 誘電体層
3 内部電極層
4 外部電極
10 コンデンサ素子本体
Claims (6)
- 主成分が化学式(Sr1.00−s−tBasCat)6.00−xRx(Ti1.00−aZra)x+2.00(Nb1.00−bTab)8.00−xO30.00で表され、
前記Rが
Y、La、Pr、Nd、Sm、Eu、Gd、Tb、Dy、Ho、Er、Tm、Yb、Luから選ばれる少なくとも一種の元素であり、s、t、x、a、bが、0.50≦s≦1.00、0≦t≦0.50、0.50≦s+t≦1.00、0.50<x≦1.50、0.30≦a≦1.00、0≦b≦1.00を満たすタングステンブロンズ型複合酸化物である主成分を有する誘電体組成物。 - 前記主成分100モルに対して、副成分としてMn、Mg、Co、V、W、Mo、Si、Li、B、Alから選択される少なくとも一種を0.10モル以上20.00モル以下含むことを特徴とする請求項1に記載の誘電体組成物。
- 前記化学式中のZr置換量aが0.50≦a≦1.00であることを特徴とする請求項1記載の誘電体組成物。
- 請求項1〜3のいずれかに記載の誘電体組成物を備える誘電体素子。
- 請求項1〜3のいずれかに記載の誘電体組成物からなる誘電体層を備える電子部品。
- 請求項1〜3のいずれかに記載の誘電体組成物からなる誘電体層と内部電極層とを交互に積層されてなる積層部分を有する積層電子部品。
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KR20210012444A (ko) * | 2019-07-25 | 2021-02-03 | 삼성전기주식회사 | 적층 세라믹 전자부품 및 이의 제조방법 |
JP7338533B2 (ja) | 2020-03-30 | 2023-09-05 | Tdk株式会社 | 誘電体組成物および電子部品 |
KR20220109893A (ko) * | 2021-01-29 | 2022-08-05 | 삼성전자주식회사 | 유전체, 그 제조방법, 및 이를 포함하는 디바이스 |
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JP6973374B2 (ja) | 2021-11-24 |
US20190103222A1 (en) | 2019-04-04 |
US10777354B2 (en) | 2020-09-15 |
EP3434658A4 (en) | 2019-11-27 |
WO2017163843A1 (ja) | 2017-09-28 |
EP3434658A1 (en) | 2019-01-30 |
CN109071355A (zh) | 2018-12-21 |
CN109071355B (zh) | 2022-01-04 |
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