JPWO2017051820A1 - スパッタリングターゲット、ターゲット製造方法 - Google Patents
スパッタリングターゲット、ターゲット製造方法 Download PDFInfo
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- JPWO2017051820A1 JPWO2017051820A1 JP2017516967A JP2017516967A JPWO2017051820A1 JP WO2017051820 A1 JPWO2017051820 A1 JP WO2017051820A1 JP 2017516967 A JP2017516967 A JP 2017516967A JP 2017516967 A JP2017516967 A JP 2017516967A JP WO2017051820 A1 JPWO2017051820 A1 JP WO2017051820A1
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- atomic
- substrate
- film
- copper
- thin film
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- 238000005477 sputtering target Methods 0.000 title claims abstract description 55
- 238000004519 manufacturing process Methods 0.000 title claims description 20
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 38
- 229910052759 nickel Inorganic materials 0.000 claims abstract description 38
- 239000000654 additive Substances 0.000 claims abstract description 33
- 230000000996 additive effect Effects 0.000 claims abstract description 30
- 239000000463 material Substances 0.000 claims abstract description 28
- 229910052725 zinc Inorganic materials 0.000 claims abstract description 20
- 229910052748 manganese Inorganic materials 0.000 claims abstract description 19
- 229910052802 copper Inorganic materials 0.000 claims description 67
- 239000000155 melt Substances 0.000 claims description 12
- 239000007787 solid Substances 0.000 claims description 5
- 238000010438 heat treatment Methods 0.000 claims description 3
- 238000001816 cooling Methods 0.000 claims 1
- 239000011159 matrix material Substances 0.000 claims 1
- 239000000758 substrate Substances 0.000 abstract description 115
- 239000010408 film Substances 0.000 abstract description 105
- 239000010409 thin film Substances 0.000 abstract description 83
- 229910045601 alloy Inorganic materials 0.000 abstract description 56
- 239000000956 alloy Substances 0.000 abstract description 56
- 239000011347 resin Substances 0.000 abstract description 30
- 229920005989 resin Polymers 0.000 abstract description 30
- 238000000034 method Methods 0.000 abstract description 27
- 238000010891 electric arc Methods 0.000 abstract description 9
- 239000010949 copper Substances 0.000 description 67
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 65
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 63
- 239000010410 layer Substances 0.000 description 47
- 239000002356 single layer Substances 0.000 description 39
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 33
- 239000011701 zinc Substances 0.000 description 20
- 239000011572 manganese Substances 0.000 description 19
- 238000004544 sputter deposition Methods 0.000 description 18
- 239000002994 raw material Substances 0.000 description 17
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 16
- 229910052751 metal Inorganic materials 0.000 description 16
- 239000002184 metal Substances 0.000 description 16
- PWHULOQIROXLJO-UHFFFAOYSA-N Manganese Chemical compound [Mn] PWHULOQIROXLJO-UHFFFAOYSA-N 0.000 description 15
- 238000007747 plating Methods 0.000 description 13
- 150000002500 ions Chemical class 0.000 description 11
- 238000005530 etching Methods 0.000 description 10
- 230000002093 peripheral effect Effects 0.000 description 9
- 239000000203 mixture Substances 0.000 description 8
- 238000002844 melting Methods 0.000 description 7
- 230000008018 melting Effects 0.000 description 7
- 239000003365 glass fiber Substances 0.000 description 6
- 238000012360 testing method Methods 0.000 description 6
- 229910000881 Cu alloy Inorganic materials 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 5
- 229910017870 Cu—Ni—Al Inorganic materials 0.000 description 4
- 238000012546 transfer Methods 0.000 description 4
- 238000009713 electroplating Methods 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 238000005259 measurement Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- 238000011156 evaluation Methods 0.000 description 2
- QPLDLSVMHZLSFG-UHFFFAOYSA-N Copper oxide Chemical compound [Cu]=O QPLDLSVMHZLSFG-UHFFFAOYSA-N 0.000 description 1
- 239000005751 Copper oxide Substances 0.000 description 1
- JPVYNHNXODAKFH-UHFFFAOYSA-N Cu2+ Chemical compound [Cu+2] JPVYNHNXODAKFH-UHFFFAOYSA-N 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 239000012790 adhesive layer Substances 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 229910001431 copper ion Inorganic materials 0.000 description 1
- 229910000431 copper oxide Inorganic materials 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000011978 dissolution method Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- WPBNNNQJVZRUHP-UHFFFAOYSA-L manganese(2+);methyl n-[[2-(methoxycarbonylcarbamothioylamino)phenyl]carbamothioyl]carbamate;n-[2-(sulfidocarbothioylamino)ethyl]carbamodithioate Chemical compound [Mn+2].[S-]C(=S)NCCNC([S-])=S.COC(=O)NC(=S)NC1=CC=CC=C1NC(=S)NC(=O)OC WPBNNNQJVZRUHP-UHFFFAOYSA-L 0.000 description 1
- 229910021645 metal ion Inorganic materials 0.000 description 1
- 150000002894 organic compounds Chemical group 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
- C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C1/00—Making non-ferrous alloys
- C22C1/02—Making non-ferrous alloys by melting
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C9/00—Alloys based on copper
- C22C9/06—Alloys based on copper with nickel or cobalt as the next major constituent
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Physical Vapour Deposition (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
Description
本発明は、前記添加物に含有されたZnの含有率とMnの含有率とは、それぞれ1.0原子%以下にされたスパッタリングターゲットである。
また、本発明は、上記記載のスパッタリングターゲットを製造するターゲット製造方法であって、固体の前記母材と、固体の前記添加物とを同じ容器中に配置し、加熱して前記母材と前記添加物とを含有する溶融物を形成し、前記溶融物を冷却して固化させて前記スパッタリングターゲットを形成するターゲット製造方法である。
空孔数の測定結果を表2に示す。
表2と図10のグラフとから、銅とニッケルとアルミニウムとの合計原子数を100原子%としたときに、亜鉛とマンガンは、それぞれ1.0%含有させると、空孔数を小さくすることができることを予測することができる。
3……基体
4、5……合金薄膜
6、7……導電膜
8……金属プラグ
9……配線膜
10……搭載装置
55……スパッタリングターゲット
Claims (3)
- CuとNiとAlとを含有し、CuとNiとAlとを100原子%としたときに、Cuを50原子%よりも多く含有し、Niを5原子%以上40原子%以下の含有率で含有し、Alを3原子%以上10原子%以下の含有率で含有する母材と、
前記母材に添加された添加物とを含有するスパッタリングターゲットであって、
前記添加物は、ZnとMnのいずれか一方又は両方から成り、前記母材の100原子%に対して、0.01原子%以上の含有率で含有されたスパッタリングターゲット。 - 前記添加物に含有されたZnの含有率とMnの含有率とは、それぞれ1.0原子%以下にされた請求項1記載のスパッタリングターゲット。
- 請求項1又は請求項2のいずれか1項記載のスパッタリングターゲットを製造するターゲット製造方法であって、
固体の前記母材と、固体の前記添加物とを同じ容器中に配置し、
加熱して前記母材と前記添加物とを含有する溶融物を形成し、
前記溶融物を冷却して固化させて前記スパッタリングターゲットを形成するターゲット製造方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2015188506 | 2015-09-25 | ||
JP2015188506 | 2015-09-25 | ||
PCT/JP2016/077815 WO2017051820A1 (ja) | 2015-09-25 | 2016-09-21 | スパッタリングターゲット、ターゲット製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPWO2017051820A1 true JPWO2017051820A1 (ja) | 2017-09-21 |
JP6442603B2 JP6442603B2 (ja) | 2018-12-19 |
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JP2017516967A Active JP6442603B2 (ja) | 2015-09-25 | 2016-09-21 | スパッタリングターゲット、ターゲット製造方法 |
Country Status (5)
Country | Link |
---|---|
JP (1) | JP6442603B2 (ja) |
KR (1) | KR20170083611A (ja) |
CN (1) | CN107109635B (ja) |
TW (1) | TWI694162B (ja) |
WO (1) | WO2017051820A1 (ja) |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2010082638A1 (ja) * | 2009-01-16 | 2010-07-22 | 株式会社神戸製鋼所 | Cu合金膜および表示デバイス |
WO2014185301A1 (ja) * | 2013-05-13 | 2014-11-20 | 株式会社アルバック | 搭載装置、その製造方法、その製造方法に用いるスパッタリングターゲット |
WO2015068527A1 (ja) * | 2013-11-06 | 2015-05-14 | 三菱マテリアル株式会社 | 保護膜形成用スパッタリングターゲットおよび積層配線膜 |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP2684978A4 (en) * | 2011-08-29 | 2015-01-14 | Jx Nippon Mining & Metals Corp | CU-GA ALLOY SPUTTER TARGET AND MANUFACTURING METHOD THEREFOR |
TWI537400B (zh) * | 2011-12-06 | 2016-06-11 | 神戶製鋼所股份有限公司 | 觸控面板感測器用銅合金配線膜及其之製造方法、以及觸控面板感測器、以及濺鍍靶 |
JP6135275B2 (ja) * | 2013-04-22 | 2017-05-31 | 三菱マテリアル株式会社 | 保護膜形成用スパッタリングターゲット |
-
2016
- 2016-09-21 WO PCT/JP2016/077815 patent/WO2017051820A1/ja active Application Filing
- 2016-09-21 KR KR1020177016247A patent/KR20170083611A/ko not_active Application Discontinuation
- 2016-09-21 JP JP2017516967A patent/JP6442603B2/ja active Active
- 2016-09-21 CN CN201680004797.XA patent/CN107109635B/zh active Active
- 2016-09-23 TW TW105130847A patent/TWI694162B/zh active
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2010082638A1 (ja) * | 2009-01-16 | 2010-07-22 | 株式会社神戸製鋼所 | Cu合金膜および表示デバイス |
WO2014185301A1 (ja) * | 2013-05-13 | 2014-11-20 | 株式会社アルバック | 搭載装置、その製造方法、その製造方法に用いるスパッタリングターゲット |
WO2015068527A1 (ja) * | 2013-11-06 | 2015-05-14 | 三菱マテリアル株式会社 | 保護膜形成用スパッタリングターゲットおよび積層配線膜 |
Also Published As
Publication number | Publication date |
---|---|
CN107109635A (zh) | 2017-08-29 |
CN107109635B (zh) | 2019-04-16 |
TW201726932A (zh) | 2017-08-01 |
TWI694162B (zh) | 2020-05-21 |
JP6442603B2 (ja) | 2018-12-19 |
WO2017051820A1 (ja) | 2017-03-30 |
KR20170083611A (ko) | 2017-07-18 |
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