JPWO2017006447A1 - 段差付ウエハおよびその製造方法 - Google Patents
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- 238000000034 method Methods 0.000 claims abstract description 28
- 230000002093 peripheral effect Effects 0.000 claims abstract description 23
- 239000004065 semiconductor Substances 0.000 description 69
- 238000000227 grinding Methods 0.000 description 38
- 238000010586 diagram Methods 0.000 description 4
- 238000005530 etching Methods 0.000 description 3
- 238000004528 spin coating Methods 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 2
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- G—PHYSICS
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- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/30—Imagewise removal using liquid means
- G03F7/3092—Recovery of material; Waste processing
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- H—ELECTRICITY
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
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- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B1/00—Processes of grinding or polishing; Use of auxiliary equipment in connection with such processes
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B7/00—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor
- B24B7/20—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground
- B24B7/22—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground for grinding inorganic material, e.g. stone, ceramics, porcelain
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B7/00—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor
- B24B7/20—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground
- B24B7/22—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground for grinding inorganic material, e.g. stone, ceramics, porcelain
- B24B7/228—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground for grinding inorganic material, e.g. stone, ceramics, porcelain for grinding thin, brittle parts, e.g. semiconductors, wafers
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B9/00—Machines or devices designed for grinding edges or bevels on work or for removing burrs; Accessories therefor
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B9/00—Machines or devices designed for grinding edges or bevels on work or for removing burrs; Accessories therefor
- B24B9/02—Machines or devices designed for grinding edges or bevels on work or for removing burrs; Accessories therefor characterised by a special design with respect to properties of materials specific to articles to be ground
- B24B9/06—Machines or devices designed for grinding edges or bevels on work or for removing burrs; Accessories therefor characterised by a special design with respect to properties of materials specific to articles to be ground of non-metallic inorganic material, e.g. stone, ceramics, porcelain
- B24B9/065—Machines or devices designed for grinding edges or bevels on work or for removing burrs; Accessories therefor characterised by a special design with respect to properties of materials specific to articles to be ground of non-metallic inorganic material, e.g. stone, ceramics, porcelain of thin, brittle parts, e.g. semiconductors, wafers
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/16—Coating processes; Apparatus therefor
- G03F7/162—Coating on a rotating support, e.g. using a whirler or a spinner
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
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- G—PHYSICS
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- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/30—Imagewise removal using liquid means
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- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02002—Preparing wafers
- H01L21/02005—Preparing bulk and homogeneous wafers
- H01L21/02035—Shaping
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/30—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by physical imperfections; having polished or roughened surface
- H01L29/32—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by physical imperfections; having polished or roughened surface the imperfections being within the semiconductor body
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- Environmental & Geological Engineering (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Grinding Of Cylindrical And Plane Surfaces (AREA)
- Grinding And Polishing Of Tertiary Curved Surfaces And Surfaces With Complex Shapes (AREA)
Abstract
Description
まず、本発明の前提となる技術(前提技術)について説明する。
まず、本発明の実施の形態1による段差付ウエハの構成について説明する。
実施の形態1では、第1直線傾斜面3と第1研削面5との接続部に第1曲面接続部4を形成し、第2直線傾斜面7と第2研削面9との接続部に第2曲面接続部8を形成する場合について説明したがこれに限るものではない。
ジスト残り。
Claims (7)
- 一方主面の中央部が薄く外周部が厚い段差を有する段差付ウエハであって、
前記段差は、曲率半径が300μm以上、1800μm以下の曲面を含むことを特徴とする、段差付ウエハ。 - 前記段差は、複数段存在し、
各前記段差は、曲率半径が300μm以上、1800μm以下の曲面を含むことを特徴とする、請求項1に記載の段差付ウエハ。 - 前記段差は、傾斜部と平坦部とを有し、
前記曲面は、少なくとも前記傾斜部と前記平坦部との境界部に形成されることを特徴とする、請求項1に記載の段差付ウエハ。 - 一方主面の中央部が薄く外周部が厚い段差を有する段差付ウエハの製造方法であって、
(a)曲率半径が300μm以上、1800μm以下の曲面を含む前記段差を形成する工程を備えることを特徴とする、段差付ウエハの製造方法。 - 前記工程(a)において、
前記段差は、複数段形成され、
各前記段差は、曲率半径が300μm以上、1800μm以下の曲面を含むように形成されることを特徴とする、請求項4に記載の段差付ウエハの製造方法。 - 前記工程(a)において、
前記段差は、傾斜部と平坦部とを有し、
前記曲面は、少なくとも前記傾斜部と前記平坦部との境界部に形成されることを特徴とする、請求項4に記載の段差付ウエハの製造方法。 - 前記工程(a)において、
前記中央部側の前記段差は、前記外周部側の前記段差の形成時に用いる砥石よりも粗さが低い砥石で形成されることを特徴とする、請求項5に記載の段差付ウエハの製造方法。
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
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PCT/JP2015/069583 WO2017006447A1 (ja) | 2015-07-08 | 2015-07-08 | 段差付ウエハおよびその製造方法 |
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JPWO2017006447A1 true JPWO2017006447A1 (ja) | 2017-09-21 |
JP6250239B2 JP6250239B2 (ja) | 2017-12-20 |
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US (1) | US10649338B2 (ja) |
JP (1) | JP6250239B2 (ja) |
CN (1) | CN107851565A (ja) |
DE (1) | DE112015006676T5 (ja) |
WO (1) | WO2017006447A1 (ja) |
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JP2022133007A (ja) * | 2021-03-01 | 2022-09-13 | 株式会社ディスコ | 被加工物の研削方法 |
US11837632B2 (en) | 2021-03-24 | 2023-12-05 | Globalwafers Co., Ltd. | Wafer |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2007103582A (ja) * | 2005-10-03 | 2007-04-19 | Disco Abrasive Syst Ltd | ウエーハの加工方法および研削装置 |
JP2009253143A (ja) * | 2008-04-09 | 2009-10-29 | Fuji Electric Device Technology Co Ltd | 半導体ウェハ研削用砥石、半導体ウェハ研削装置および半導体装置の製造方法 |
JP2010283185A (ja) * | 2009-06-05 | 2010-12-16 | Mitsubishi Electric Corp | 半導体装置の製造方法 |
JP2012238793A (ja) * | 2011-05-13 | 2012-12-06 | Disco Abrasive Syst Ltd | デバイスチップの製造方法 |
JP2014107312A (ja) * | 2012-11-26 | 2014-06-09 | Mitsubishi Electric Corp | 半導体ウェハの薄厚加工方法 |
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JP3194594B2 (ja) * | 1990-09-26 | 2001-07-30 | 株式会社日立製作所 | 構造体の製造方法 |
JP5266869B2 (ja) * | 2008-05-19 | 2013-08-21 | 富士電機株式会社 | 半導体装置および半導体装置の製造方法 |
JP2011054808A (ja) | 2009-09-03 | 2011-03-17 | Disco Abrasive Syst Ltd | ウエーハの加工方法及び該加工方法により加工されたウエーハ |
JP5772092B2 (ja) * | 2011-03-11 | 2015-09-02 | 富士電機株式会社 | 半導体製造方法および半導体製造装置 |
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2015
- 2015-07-08 WO PCT/JP2015/069583 patent/WO2017006447A1/ja active Application Filing
- 2015-07-08 DE DE112015006676.4T patent/DE112015006676T5/de active Pending
- 2015-07-08 JP JP2017527022A patent/JP6250239B2/ja active Active
- 2015-07-08 CN CN201580081529.3A patent/CN107851565A/zh active Pending
- 2015-07-08 US US15/571,904 patent/US10649338B2/en active Active
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2007103582A (ja) * | 2005-10-03 | 2007-04-19 | Disco Abrasive Syst Ltd | ウエーハの加工方法および研削装置 |
JP2009253143A (ja) * | 2008-04-09 | 2009-10-29 | Fuji Electric Device Technology Co Ltd | 半導体ウェハ研削用砥石、半導体ウェハ研削装置および半導体装置の製造方法 |
JP2010283185A (ja) * | 2009-06-05 | 2010-12-16 | Mitsubishi Electric Corp | 半導体装置の製造方法 |
JP2012238793A (ja) * | 2011-05-13 | 2012-12-06 | Disco Abrasive Syst Ltd | デバイスチップの製造方法 |
JP2014107312A (ja) * | 2012-11-26 | 2014-06-09 | Mitsubishi Electric Corp | 半導体ウェハの薄厚加工方法 |
Also Published As
Publication number | Publication date |
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CN107851565A (zh) | 2018-03-27 |
WO2017006447A1 (ja) | 2017-01-12 |
JP6250239B2 (ja) | 2017-12-20 |
DE112015006676T5 (de) | 2018-03-15 |
US10649338B2 (en) | 2020-05-12 |
US20180136560A1 (en) | 2018-05-17 |
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