JPWO2016052203A1 - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
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- JPWO2016052203A1 JPWO2016052203A1 JP2016511454A JP2016511454A JPWO2016052203A1 JP WO2016052203 A1 JPWO2016052203 A1 JP WO2016052203A1 JP 2016511454 A JP2016511454 A JP 2016511454A JP 2016511454 A JP2016511454 A JP 2016511454A JP WO2016052203 A1 JPWO2016052203 A1 JP WO2016052203A1
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Abstract
Description
まず、この発明の実施の形態1に係る半導体装置について説明する。図1は、この発明の実施の形態1に係る半導体装置を説明するための平面図である。ここでは半導体装置の一例として、SiC(Silicon Carbide)を用いた炭化珪素半導体装置であるトレンチゲート型MOSFETを示す。
図16及び17は、本実施の形態2に係る半導体装置を示す上面図である。本実施の形態における半導体装置においては、保護コンタクト領域15から離れた領域にあるチャネル領域を不活性化したことを特徴としている。それ以外については、実施の形態1と同様である。本実施の形態によれば、短絡耐量を向上する効果が得られる。
Claims (12)
- 基板と、
前記基板上に設けられた第1導電型のドリフト層と、
前記ドリフト層上に形成された第2導電型のベース領域と、
前記ベース領域内に位置する第1導電型のソース領域と、
前記ベース領域と前記ソース領域とを貫通し、平面視においてセル領域を区分けするトレンチと、
前記ドリフト層内において、前記トレンチの底部に配設された第2導電型の保護拡散層と、
前記トレンチの内壁に形成されたゲート絶縁膜と、
前記トレンチ内に前記ゲート絶縁膜を介して埋め込まれたゲート電極と、
前記ソース領域と電気的に接続されるソース電極と、
3個以上の前記セル領域の位置に配設され、前記保護拡散層と前記ソース電極とを接続する保護コンタクト領域と、
を備え、
前記保護コンタクト領域は、最も近い距離にある3つの前記保護コンタクト領域の中心を頂点とする三角形が、鋭角三角形となるように配設されたこと
を特徴とする半導体装置。 - 前記トレンチは、前記セル領域が格子状に配置されるように形成されたこと
を特徴とする請求項1に記載の半導体装置。 - 前記トレンチは、前記セル領域が千鳥配置に配置されるように形成されたこと
を特徴とする請求項1に記載の半導体装置。 - 前記トレンチは、前記セル領域が櫛型に配置されるように形成されたこと
を特徴とする請求項1に記載の半導体装置。 - 前記保護拡散層は、3×1017cm−3以上1×1018cm−3以下の濃度範囲の第2導電型の不純物を含むこと
を特徴とする請求項1から4のいずれか1項に記載の半導体装置。 - 前記保護コンタクト領域は、前記保護拡散層に達する深さの溝部を有すること
を特徴とする請求項1から5のいずれか1項に記載の半導体装置。 - 前記保護コンタクト領域は、前記保護拡散層と前記ソース電極とをオーミック電極を介して接続し、
前記保護コンタクト領域において、前記保護拡散層は、前記オーミック電極と接する領域に、第2導電型の不純物濃度が5×1018cm−3以上1×1021cm−3以下である高濃度領域を備えること
を特徴とする請求項1から6のいずれか1項に記載の半導体装置。 - 前記セル領域は、前記保護コンタクト領域を中心とし、前記セル領域の幅の1倍以上3倍以下の半径を有する円より外側に、前記円内のチャネル抵抗に比べてチャネル抵抗が大きい不活性化チャネルを備えること
を特徴とする請求項1から7のいずれか1項に記載の半導体装置。 - 前記不活性化チャネルは、前記トレンチの側面全面が前記ゲート絶縁膜を介して前記ウェル領域と対向すること
を特徴とする請求項8に記載の半導体装置。 - 基板と、
前記基板上に設けられた第1導電型のドリフト層と、
前記ドリフト層上に形成された第2導電型のベース領域と、
前記ベース領域内に位置する第1導電型のソース領域と、
前記ベース領域と前記ソース領域とを貫通し、平面視においてセル領域が複数になるように区分けするトレンチと、
前記ドリフト層内において、前記トレンチの底部に配設された第2導電型の保護拡散層と、
前記トレンチの内壁に形成されたゲート絶縁膜と、
前記トレンチ内に前記ゲート絶縁膜を介して埋め込まれたゲート電極と、
前記ソース領域と電気的に接続されるソース電極と、
複数の前記セル領域のうち3個以上の位置に配設され、前記保護拡散層と前記ソース電極とを接続する保護コンタクト領域と、
を備え、
前記セル領域は、前記保護コンタクト領域を中心とし、前記セル領域の幅の1倍以上3倍以下の半径を有する円より外側に、前記円内のチャネル抵抗に比べてチャネル抵抗が大きい不活性化チャネルを有する半導体装置。 - 前記基板は、ワイドバンドギャップ半導体であること
を特徴とする請求項1から10のいずれか1項に記載の半導体装置。 - 前記基板は、炭化珪素であること
を特徴とする請求項1から10のいずれか1項に記載の半導体装置。
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