JPWO2015129415A1 - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
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- JPWO2015129415A1 JPWO2015129415A1 JP2016505127A JP2016505127A JPWO2015129415A1 JP WO2015129415 A1 JPWO2015129415 A1 JP WO2015129415A1 JP 2016505127 A JP2016505127 A JP 2016505127A JP 2016505127 A JP2016505127 A JP 2016505127A JP WO2015129415 A1 JPWO2015129415 A1 JP WO2015129415A1
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- Prior art keywords
- bonding
- semiconductor device
- ultrasonic
- bonding pad
- wire
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- 239000004065 semiconductor Substances 0.000 title claims description 117
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 56
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 56
- 229910052751 metal Inorganic materials 0.000 claims description 73
- 239000002184 metal Substances 0.000 claims description 73
- 238000004519 manufacturing process Methods 0.000 claims description 42
- 238000000034 method Methods 0.000 claims description 20
- 150000002739 metals Chemical class 0.000 claims description 3
- 239000010410 layer Substances 0.000 description 61
- 239000011229 interlayer Substances 0.000 description 21
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 9
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 6
- 229910052709 silver Inorganic materials 0.000 description 6
- 239000004332 silver Substances 0.000 description 6
- 229910000679 solder Inorganic materials 0.000 description 5
- 230000000694 effects Effects 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 238000012795 verification Methods 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 229910017944 Ag—Cu Inorganic materials 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000010248 power generation Methods 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000002250 progressing effect Effects 0.000 description 1
- 230000008054 signal transmission Effects 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
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Abstract
Description
本発明の実施形態1に係る半導体装置50の製造方法および半導体装置50を、図1〜図7に基づき説明する。
まず、本実施形態に係る半導体装置50の構造について、図2の(a)および図2の(b)に基づき説明する。図2の(a)は、本発明の実施形態1に係る半導体装置50の構成を示す平面図である。図2の(b)は、図2の(a)の側面図である。
半導体装置50の配線構造について、図1〜図7に基づき説明する。
本実施形態に係る半導体装置50の製造方法の検証例について以下に述べる。本検証例では、下記(1)〜(3)の条件により、アルミワイヤ3をボンディングパッド部2にワイヤボンディングする場合について実施した例を示す。(1)GaN系パワーデバイス1上に形成されるボンディングパッド部2を約600μm×1200μmとする。(2)アルミワイヤ3をφ300μmとする。(3)ワイヤボンディングを、荷重700gとする超音波ボンディングにより実施する。
本発明の他の実施形態について、図7および図8に基づいて説明すれば、以下のとおりである。図8は、本実施形態に係る半導体装置50のボンディングパッド部2の平面図である。
本発明の実施形態3について、図9の(a)〜図9の(f)に基づいて説明すれば、以下のとおりである。図9の(a)〜図9の(f)は、本実施形態に係る半導体装置50のボンディングパッド部2の平面図である。
本発明の態様1に係る半導体装置(50)の製造方法は、超音波振動をワイヤに印加させながら、半導体素子(GaN系パワーデバイス1)上に形成された上層メタル(ボンディングパッド部2)に該ワイヤ(アルミワイヤ3)をボンディングする超音波ボンディング工程を含む半導体装置(50)の製造方法であって、上記半導体素子は、上記上層メタルの下に形成されている下層メタル(第2電極42)を有し、上記超音波ボンディング工程にて、超音波振動を上記ワイヤに印加する方向と上記下層メタルの長手方向との成す角θが、0°≦θ≦45°となるように超音波振動を印加する。
2 ボンディングパッド部(上層メタル)
2a 第1凹部
2b 第2凹部
2c 第1凸部(凸部)
3 アルミワイヤ
4 接触電極部
4c 接触電極の角部
5 接続部
5a 第2凸部
5b 第3凸部
6a、6b 溝部
7 絶縁層
8 電子機能素子
10 層間クラック
11 電気的接続領域(電気的接続部)
12 ボンディング領域(ボンディング部)
13 空き領域
20 接触電極部ライン方向
21 超音波印加方向
41 第1電極
41a つば部
42 第2電極(下層メタル)
42a つば部
50 半導体装置
51 MOS−FET
52 フィン部
53 金線
54 アウターリード部
55 インナーリード部
56 半田
57 銀ペースト
58 ダイパッド部
Claims (5)
- 超音波振動をワイヤに印加させながら、半導体素子上に形成された上層メタルに該ワイヤをボンディングする超音波ボンディング工程を含む半導体装置の製造方法であって、
上記半導体素子は、上記上層メタルの下に形成されている下層メタルを有し、
上記超音波ボンディング工程にて、超音波振動を上記ワイヤに印加する方向と上記下層メタルの長手方向との成す角θが、0°≦θ≦45°となるように超音波振動を印加することを特徴とする半導体装置の製造方法。 - 上記半導体素子はGaN系半導体素子であり、上記ワイヤはアルミニウムワイヤであることを特徴とする請求項1に記載の半導体装置の製造方法。
- 上記下層メタルは、凹部を有し、
上記上層メタルは、上記凹部に対向する位置に該凹部に向かって突出した凸部を有することを特徴とする請求項1または2に記載の半導体装置の製造方法。 - 請求項1から3のいずれか1項に記載の半導体装置の製造方法により製造された半導体装置であって、
上記半導体装置は、上記半導体素子と2つの上記上層メタルとを有し、
上記半導体素子は、複数の上記下層メタルを有し、
2つの上記上層メタルの各々は、
上記超音波振動の印加方向に垂直な方向である超音波直交方向に沿って、複数の上記下層メタルの全てを横断するように配置された電気的接続部と、
上記超音波直交方向の長さが、上記電気的接続部より小さく、かつ、上記ワイヤの直径より大きいボンディング部とを有しており、
一方の上記上層メタルの上記ボンディング部と、他方の上記上層メタルの上記ボンディング部とが、上記超音波直交方向に並んで配置されていることを特徴とする半導体装置。 - 各上記上層メタルは、上記下層メタルのいずれかと電気的に接続する接続部を有し、
各上記上層メタルの、上記超音波直交方向における上記電気的接続部および上記ボンディング部の長さは、当該超音波直交方向に並んだ上記接続部の総数が多いほど大きくなることを特徴とする請求項4に記載の半導体装置。
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Citations (4)
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JPS60176554U (ja) * | 1984-05-04 | 1985-11-22 | 株式会社日立製作所 | 半導体装置 |
JP2001319945A (ja) * | 2000-03-02 | 2001-11-16 | Ibiden Co Ltd | 電子部品搭載用基板 |
JP2012015263A (ja) * | 2010-06-30 | 2012-01-19 | Shindengen Electric Mfg Co Ltd | ワイヤボンディング装置 |
JP2012517716A (ja) * | 2009-02-11 | 2012-08-02 | メギカ・コーポレイション | イメージおよび光センサチップパッケージ |
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JP2002324798A (ja) * | 2001-04-25 | 2002-11-08 | Nissan Motor Co Ltd | 電極構造 |
DE10156468A1 (de) * | 2001-11-16 | 2003-05-28 | Eupec Gmbh & Co Kg | Halbleiterbauelement und Verfahren zum Kontaktieren eines solchen Halbleiterbauelements |
JP3882734B2 (ja) * | 2002-10-16 | 2007-02-21 | 富士電機デバイステクノロジー株式会社 | パワー半導体装置のワイヤボンディング方法 |
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JPS60176554U (ja) * | 1984-05-04 | 1985-11-22 | 株式会社日立製作所 | 半導体装置 |
JP2001319945A (ja) * | 2000-03-02 | 2001-11-16 | Ibiden Co Ltd | 電子部品搭載用基板 |
JP2012517716A (ja) * | 2009-02-11 | 2012-08-02 | メギカ・コーポレイション | イメージおよび光センサチップパッケージ |
JP2012015263A (ja) * | 2010-06-30 | 2012-01-19 | Shindengen Electric Mfg Co Ltd | ワイヤボンディング装置 |
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