JPWO2015068685A1 - Cu核ボール、はんだペースト、フォームはんだ及びはんだ継手 - Google Patents
Cu核ボール、はんだペースト、フォームはんだ及びはんだ継手 Download PDFInfo
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- JPWO2015068685A1 JPWO2015068685A1 JP2015546641A JP2015546641A JPWO2015068685A1 JP WO2015068685 A1 JPWO2015068685 A1 JP WO2015068685A1 JP 2015546641 A JP2015546641 A JP 2015546641A JP 2015546641 A JP2015546641 A JP 2015546641A JP WO2015068685 A1 JPWO2015068685 A1 JP WO2015068685A1
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- Prior art keywords
- solder
- ball
- core
- layer
- core ball
- Prior art date
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- Granted
Links
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- 239000000956 alloy Substances 0.000 claims abstract description 72
- 239000012535 impurity Substances 0.000 claims abstract description 30
- 229910052802 copper Inorganic materials 0.000 claims abstract description 14
- 229910052718 tin Inorganic materials 0.000 claims abstract description 14
- 229910000881 Cu alloy Inorganic materials 0.000 claims abstract description 7
- 239000010410 layer Substances 0.000 claims description 92
- 239000012792 core layer Substances 0.000 claims description 19
- 229910052759 nickel Inorganic materials 0.000 claims description 8
- 239000010949 copper Substances 0.000 description 372
- 238000007747 plating Methods 0.000 description 62
- 239000004065 semiconductor Substances 0.000 description 43
- 229910052745 lead Inorganic materials 0.000 description 33
- 229910052797 bismuth Inorganic materials 0.000 description 32
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- 238000012360 testing method Methods 0.000 description 18
- 229910052776 Thorium Inorganic materials 0.000 description 13
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- 230000000052 comparative effect Effects 0.000 description 13
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- 238000010438 heat treatment Methods 0.000 description 10
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- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002994 raw material Substances 0.000 description 5
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- 230000005260 alpha ray Effects 0.000 description 4
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- 238000010521 absorption reaction Methods 0.000 description 2
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- 238000004458 analytical method Methods 0.000 description 2
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- 229910052785 arsenic Inorganic materials 0.000 description 2
- 239000012298 atmosphere Substances 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- JALQQBGHJJURDQ-UHFFFAOYSA-L bis(methylsulfonyloxy)tin Chemical compound [Sn+2].CS([O-])(=O)=O.CS([O-])(=O)=O JALQQBGHJJURDQ-UHFFFAOYSA-L 0.000 description 2
- 229910052793 cadmium Inorganic materials 0.000 description 2
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- 229910052738 indium Inorganic materials 0.000 description 2
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- 238000001179 sorption measurement Methods 0.000 description 2
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- 229910052725 zinc Inorganic materials 0.000 description 2
- YXTDAZMTQFUZHK-ZVGUSBNCSA-L (2r,3r)-2,3-dihydroxybutanedioate;tin(2+) Chemical compound [Sn+2].[O-]C(=O)[C@H](O)[C@@H](O)C([O-])=O YXTDAZMTQFUZHK-ZVGUSBNCSA-L 0.000 description 1
- MNDGPLSORKUYSJ-UHFFFAOYSA-J 1,6,8,13-tetraoxa-7-stannaspiro[6.6]tridecane-2,5,9,12-tetrone Chemical compound O1C(=O)CCC(=O)O[Sn]21OC(=O)CCC(=O)O2 MNDGPLSORKUYSJ-UHFFFAOYSA-J 0.000 description 1
- DIZBQMTZXOUFTD-UHFFFAOYSA-N 2-(furan-2-yl)-3h-benzimidazole-5-carboxylic acid Chemical compound N1C2=CC(C(=O)O)=CC=C2N=C1C1=CC=CO1 DIZBQMTZXOUFTD-UHFFFAOYSA-N 0.000 description 1
- YYYOQURZQWIILK-UHFFFAOYSA-N 2-[(2-aminophenyl)disulfanyl]aniline Chemical compound NC1=CC=CC=C1SSC1=CC=CC=C1N YYYOQURZQWIILK-UHFFFAOYSA-N 0.000 description 1
- GEZAUFNYMZVOFV-UHFFFAOYSA-J 2-[(2-oxo-1,3,2$l^{5},4$l^{2}-dioxaphosphastannetan-2-yl)oxy]-1,3,2$l^{5},4$l^{2}-dioxaphosphastannetane 2-oxide Chemical compound [Sn+2].[Sn+2].[O-]P([O-])(=O)OP([O-])([O-])=O GEZAUFNYMZVOFV-UHFFFAOYSA-J 0.000 description 1
- CQMNNMLVXSWLCH-UHFFFAOYSA-B 2-hydroxypropane-1,2,3-tricarboxylate;tin(4+) Chemical compound [Sn+4].[Sn+4].[Sn+4].[O-]C(=O)CC(O)(CC([O-])=O)C([O-])=O.[O-]C(=O)CC(O)(CC([O-])=O)C([O-])=O.[O-]C(=O)CC(O)(CC([O-])=O)C([O-])=O.[O-]C(=O)CC(O)(CC([O-])=O)C([O-])=O CQMNNMLVXSWLCH-UHFFFAOYSA-B 0.000 description 1
- SKEZDZQGPKHHSH-UHFFFAOYSA-J 2-hydroxypropanoate;tin(4+) Chemical compound [Sn+4].CC(O)C([O-])=O.CC(O)C([O-])=O.CC(O)C([O-])=O.CC(O)C([O-])=O SKEZDZQGPKHHSH-UHFFFAOYSA-J 0.000 description 1
- LSNNMFCWUKXFEE-UHFFFAOYSA-M Bisulfite Chemical compound OS([O-])=O LSNNMFCWUKXFEE-UHFFFAOYSA-M 0.000 description 1
- CPELXLSAUQHCOX-UHFFFAOYSA-M Bromide Chemical compound [Br-] CPELXLSAUQHCOX-UHFFFAOYSA-M 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- OCUCCJIRFHNWBP-IYEMJOQQSA-L Copper gluconate Chemical compound [Cu+2].OC[C@@H](O)[C@@H](O)[C@H](O)[C@@H](O)C([O-])=O.OC[C@@H](O)[C@@H](O)[C@H](O)[C@@H](O)C([O-])=O OCUCCJIRFHNWBP-IYEMJOQQSA-L 0.000 description 1
- QPLDLSVMHZLSFG-UHFFFAOYSA-N Copper oxide Chemical compound [Cu]=O QPLDLSVMHZLSFG-UHFFFAOYSA-N 0.000 description 1
- 239000005751 Copper oxide Substances 0.000 description 1
- PWKSKIMOESPYIA-BYPYZUCNSA-N L-N-acetyl-Cysteine Chemical compound CC(=O)N[C@@H](CS)C(O)=O PWKSKIMOESPYIA-BYPYZUCNSA-N 0.000 description 1
- RAOSIAYCXKBGFE-UHFFFAOYSA-K [Cu+3].[O-]P([O-])([O-])=O Chemical compound [Cu+3].[O-]P([O-])([O-])=O RAOSIAYCXKBGFE-UHFFFAOYSA-K 0.000 description 1
- 239000006096 absorbing agent Substances 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 229960004308 acetylcysteine Drugs 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 230000005262 alpha decay Effects 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- ODWXUNBKCRECNW-UHFFFAOYSA-M bromocopper(1+) Chemical compound Br[Cu+] ODWXUNBKCRECNW-UHFFFAOYSA-M 0.000 description 1
- MGIWDIMSTXWOCO-UHFFFAOYSA-N butanedioic acid;copper Chemical compound [Cu].OC(=O)CCC(O)=O MGIWDIMSTXWOCO-UHFFFAOYSA-N 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 150000001879 copper Chemical class 0.000 description 1
- 229940108925 copper gluconate Drugs 0.000 description 1
- 229910000431 copper oxide Inorganic materials 0.000 description 1
- 229910000365 copper sulfate Inorganic materials 0.000 description 1
- ORTQZVOHEJQUHG-UHFFFAOYSA-L copper(II) chloride Chemical compound Cl[Cu]Cl ORTQZVOHEJQUHG-UHFFFAOYSA-L 0.000 description 1
- XTVVROIMIGLXTD-UHFFFAOYSA-N copper(II) nitrate Chemical compound [Cu+2].[O-][N+]([O-])=O.[O-][N+]([O-])=O XTVVROIMIGLXTD-UHFFFAOYSA-N 0.000 description 1
- ARUVKPQLZAKDPS-UHFFFAOYSA-L copper(II) sulfate Chemical compound [Cu+2].[O-][S+2]([O-])([O-])[O-] ARUVKPQLZAKDPS-UHFFFAOYSA-L 0.000 description 1
- OPQARKPSCNTWTJ-UHFFFAOYSA-L copper(ii) acetate Chemical compound [Cu+2].CC([O-])=O.CC([O-])=O OPQARKPSCNTWTJ-UHFFFAOYSA-L 0.000 description 1
- RSJOBNMOMQFPKQ-UHFFFAOYSA-L copper;2,3-dihydroxybutanedioate Chemical compound [Cu+2].[O-]C(=O)C(O)C(O)C([O-])=O RSJOBNMOMQFPKQ-UHFFFAOYSA-L 0.000 description 1
- DYROSKSLMAPFBZ-UHFFFAOYSA-L copper;2-hydroxypropanoate Chemical compound [Cu+2].CC(O)C([O-])=O.CC(O)C([O-])=O DYROSKSLMAPFBZ-UHFFFAOYSA-L 0.000 description 1
- HFDWIMBEIXDNQS-UHFFFAOYSA-L copper;diformate Chemical compound [Cu+2].[O-]C=O.[O-]C=O HFDWIMBEIXDNQS-UHFFFAOYSA-L 0.000 description 1
- GBRBMTNGQBKBQE-UHFFFAOYSA-L copper;diiodide Chemical compound I[Cu]I GBRBMTNGQBKBQE-UHFFFAOYSA-L 0.000 description 1
- ZQLBQWDYEGOYSW-UHFFFAOYSA-L copper;disulfamate Chemical compound [Cu+2].NS([O-])(=O)=O.NS([O-])(=O)=O ZQLBQWDYEGOYSW-UHFFFAOYSA-L 0.000 description 1
- ZHOLKSYCHRKNCU-UHFFFAOYSA-H copper;silicon(4+);hexafluoride Chemical compound [F-].[F-].[F-].[F-].[F-].[F-].[Si+4].[Cu+2] ZHOLKSYCHRKNCU-UHFFFAOYSA-H 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- FWBOFUGDKHMVPI-UHFFFAOYSA-K dicopper;2-oxidopropane-1,2,3-tricarboxylate Chemical compound [Cu+2].[Cu+2].[O-]C(=O)CC([O-])(C([O-])=O)CC([O-])=O FWBOFUGDKHMVPI-UHFFFAOYSA-K 0.000 description 1
- PEVJCYPAFCUXEZ-UHFFFAOYSA-J dicopper;phosphonato phosphate Chemical compound [Cu+2].[Cu+2].[O-]P([O-])(=O)OP([O-])([O-])=O PEVJCYPAFCUXEZ-UHFFFAOYSA-J 0.000 description 1
- 238000004090 dissolution Methods 0.000 description 1
- 238000005553 drilling Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005868 electrolysis reaction Methods 0.000 description 1
- 238000004993 emission spectroscopy Methods 0.000 description 1
- CCIVGXIOQKPBKL-UHFFFAOYSA-M ethanesulfonate Chemical compound CCS([O-])(=O)=O CCIVGXIOQKPBKL-UHFFFAOYSA-M 0.000 description 1
- 238000011049 filling Methods 0.000 description 1
- 239000003673 groundwater Substances 0.000 description 1
- 238000009616 inductively coupled plasma Methods 0.000 description 1
- 238000001095 inductively coupled plasma mass spectrometry Methods 0.000 description 1
- 238000002354 inductively-coupled plasma atomic emission spectroscopy Methods 0.000 description 1
- 238000004949 mass spectrometry Methods 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
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- 238000002156 mixing Methods 0.000 description 1
- 239000010413 mother solution Substances 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 229910052699 polonium Inorganic materials 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 229910052704 radon Inorganic materials 0.000 description 1
- SYUHGPGVQRZVTB-UHFFFAOYSA-N radon atom Chemical compound [Rn] SYUHGPGVQRZVTB-UHFFFAOYSA-N 0.000 description 1
- 230000035939 shock Effects 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
- 239000004094 surface-active agent Substances 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001432 tin ion Inorganic materials 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- YZJQPSAZKVXWEZ-UHFFFAOYSA-J tin(4+) tetraformate Chemical compound [Sn+4].[O-]C=O.[O-]C=O.[O-]C=O.[O-]C=O YZJQPSAZKVXWEZ-UHFFFAOYSA-J 0.000 description 1
- FAKFSJNVVCGEEI-UHFFFAOYSA-J tin(4+);disulfate Chemical compound [Sn+4].[O-]S([O-])(=O)=O.[O-]S([O-])(=O)=O FAKFSJNVVCGEEI-UHFFFAOYSA-J 0.000 description 1
- QUBMWJKTLKIJNN-UHFFFAOYSA-B tin(4+);tetraphosphate Chemical compound [Sn+4].[Sn+4].[Sn+4].[O-]P([O-])([O-])=O.[O-]P([O-])([O-])=O.[O-]P([O-])([O-])=O.[O-]P([O-])([O-])=O QUBMWJKTLKIJNN-UHFFFAOYSA-B 0.000 description 1
- AECLSPNOPRYXFI-UHFFFAOYSA-J tin(4+);tetrasulfamate Chemical compound [Sn+4].NS([O-])(=O)=O.NS([O-])(=O)=O.NS([O-])(=O)=O.NS([O-])(=O)=O AECLSPNOPRYXFI-UHFFFAOYSA-J 0.000 description 1
- HPGGPRDJHPYFRM-UHFFFAOYSA-J tin(iv) chloride Chemical compound Cl[Sn](Cl)(Cl)Cl HPGGPRDJHPYFRM-UHFFFAOYSA-J 0.000 description 1
- QPBYLOWPSRZOFX-UHFFFAOYSA-J tin(iv) iodide Chemical compound I[Sn](I)(I)I QPBYLOWPSRZOFX-UHFFFAOYSA-J 0.000 description 1
- YJGJRYWNNHUESM-UHFFFAOYSA-J triacetyloxystannyl acetate Chemical compound [Sn+4].CC([O-])=O.CC([O-])=O.CC([O-])=O.CC([O-])=O YJGJRYWNNHUESM-UHFFFAOYSA-J 0.000 description 1
- YQMWDQQWGKVOSQ-UHFFFAOYSA-N trinitrooxystannyl nitrate Chemical compound [Sn+4].[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O YQMWDQQWGKVOSQ-UHFFFAOYSA-N 0.000 description 1
- PQGFRBOHUKOXQZ-FSCNPAMSSA-J tris[[(2R,3S,4R,5R)-2,3,4,5,6-pentahydroxyhexanoyl]oxy]stannyl (2R,3S,4R,5R)-2,3,4,5,6-pentahydroxyhexanoate Chemical compound [Sn+4].OC[C@@H](O)[C@@H](O)[C@H](O)[C@@H](O)C([O-])=O.OC[C@@H](O)[C@@H](O)[C@H](O)[C@@H](O)C([O-])=O.OC[C@@H](O)[C@@H](O)[C@H](O)[C@@H](O)C([O-])=O.OC[C@@H](O)[C@@H](O)[C@H](O)[C@@H](O)C([O-])=O PQGFRBOHUKOXQZ-FSCNPAMSSA-J 0.000 description 1
- 238000009834 vaporization Methods 0.000 description 1
- 230000008016 vaporization Effects 0.000 description 1
Images
Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F1/00—Metallic powder; Treatment of metallic powder, e.g. to facilitate working or to improve properties
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F1/00—Metallic powder; Treatment of metallic powder, e.g. to facilitate working or to improve properties
- B22F1/17—Metallic particles coated with metal
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
- B23K35/02—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by mechanical features, e.g. shape
- B23K35/0222—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by mechanical features, e.g. shape for use in soldering, brazing
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
- B23K35/02—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by mechanical features, e.g. shape
- B23K35/0222—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by mechanical features, e.g. shape for use in soldering, brazing
- B23K35/0244—Powders, particles or spheres; Preforms made therefrom
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
- B23K35/02—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by mechanical features, e.g. shape
- B23K35/0222—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by mechanical features, e.g. shape for use in soldering, brazing
- B23K35/0244—Powders, particles or spheres; Preforms made therefrom
- B23K35/025—Pastes, creams, slurries
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
- B23K35/22—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
- B23K35/22—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
- B23K35/24—Selection of soldering or welding materials proper
- B23K35/26—Selection of soldering or welding materials proper with the principal constituent melting at less than 400 degrees C
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
- B23K35/22—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
- B23K35/24—Selection of soldering or welding materials proper
- B23K35/26—Selection of soldering or welding materials proper with the principal constituent melting at less than 400 degrees C
- B23K35/262—Sn as the principal constituent
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
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Abstract
Description
(1)Cu、あるいは、Cuを50%以上含むCu合金で構成される核層と、SnとCuからなるはんだ合金で構成され、核層を被覆するはんだ層とを備えたCu核ボール。
U及びThは放射性元素であり、ソフトエラーを抑制するにはこれらの含有量を抑える必要がある。U及びThの含有量は、はんだ層3のα線量を0.0200cph/cm2以下とするため、各々5ppb以下にする必要がある。また、現在または将来の高密度実装でのソフトエラーを抑制する観点から、U及びThの含有量は、好ましくは、各々2ppb以下である。
本発明に係るCu核ボール1のα線量は0.0200cph/cm2以下である。これは、電子部品の高密度実装においてソフトエラーが問題にならない程度のα線量である。本発明に係るCu核ボール1のα線量は、Cu核ボール1を構成するはんだ層3のα線量が0.0200cph/cm2以下であることにより達成される。また、Cu核ボール1のα線量は、後述するように、Cuボール2のα線量が0.0200cph/cm2以下であることによっても達成される。
前述のようにU及びThは放射性同位元素であり、ソフトエラーを抑制するにはこれらの含有量を抑える必要がある。U及びThの含有量は、Cuボール2のα線量を0.0200cph/cm2以下とするため、各々5ppb以下にする必要がある。また、現在または将来の高密度実装でのソフトエラーを抑制する観点から、U及びThの含有量は、好ましくは、各々2ppb以下である。
Cuボール2は純度が3N以上4N5以下である。つまり、Cuボール2は不純物元素の含有量が50ppm以上である。ここで、Cu等の金属材料の純度は、99%を2N、99.9%を3N、99.99%を4N、99.999%を5Nとする。4N5とは、金属材料の純度が99.995%であることを示す。
Cuボール2のα線量は0.0200cph/cm2以下である。これは、電子部品の高密度実装においてソフトエラーが問題にならない程度のα線量である。本発明では、Cuボール2を製造するために通常行っている工程に加え再度加熱処理を施している。このため、Cu材にわずかに残存する210Poが揮発し、Cu材と比較してCuボール2の方がより一層低いα線量を示す。α線量は、更なる高密度実装でのソフトエラーを抑制する観点から、好ましくは0.0020cph/cm2以下であり、より好ましくは0.0010cph/cm2以下である。
Cuボール2に含まれる不純物元素としては、Sn、Sb、Bi、Zn、Fe、Al、As、Ag、In、Cd、Cu、Pb、Au、P、S、U、Thなどが考えられるが、本発明に係るCu核ボール1を構成するCuボール2は、不純物元素の中でも特にPbまたはBiのいずれかの含有量、あるいは、Pb及びBiの合計の含有量が1ppm以上不純物元素として含有することが好ましい。本発明では、α線量を低減する上でPbまたはBiのいずれかの含有量、あるいは、Pb及びBiの含有量を極限まで低減する必要がない。
これは以下の理由による。
Cuボール2の形状は、スタンドオフ高さを制御する観点から真球度は0.95以上であることが好ましい。Cuボール2の真球度が0.95未満であると、Cuボールが不定形状になるため、バンプ形成時に高さが不均一なバンプが形成され、接合不良が発生する可能性が高まる。真球度は、より好ましくは0.990以上である。本発明において、真球度とは真球からのずれを表す。真球度は、例えば、最小二乗中心法(LSC法)、最小領域中心法(MZC法)、最大内接中心法(MIC法)、最小外接中心法(MCC法)など種々の方法で求められる。詳しくは、真球度とは、500個の各Cuボール2の直径を長径で割った際に算出される算術平均値であり、値が上限である1.00に近いほど真球に近いことを表す。本発明での長径の長さ、および直径の長さとは、ミツトヨ社製のウルトラクイックビジョン、ULTRA QV350−PRO測定装置によって測定された長さをいう。
Cuボール2の直径は1〜1000μmであることが好ましい。この範囲にあると、球状のCuボール2を安定して製造でき、また、端子間が狭ピッチである場合の接続短絡を抑制することができる。
材料となるCu材はセラミックのような耐熱性の板である耐熱板に置かれ、耐熱板とともに炉中で加熱される。耐熱板には底部が半球状となった多数の円形の溝が設けられている。溝の直径や深さは、Cuボールの粒径に応じて適宜設定されており、例えば、直径が0.8mmであり、深さが0.88mmである。また、Cu細線が切断されて得られたチップ形状のCu材(以下、「チップ材」という。)は、耐熱板の溝内に一個ずつ投入される。
Sn化合物の具体例としては、メタンスルホン酸、エタンスルホン酸、2−プロパノールスルホン酸、p−フェノールスルホン酸などの有機スルホン酸の錫塩、硫酸錫、酸化錫、硝酸錫、塩化錫、臭化錫、ヨウ化錫、リン酸錫、ピロリン酸錫、酢酸錫、ギ酸錫、クエン酸錫、グルコン酸錫、酒石酸錫、乳酸錫、コハク酸錫、スルファミン酸錫、ホウフッ化錫、ケイフッ化錫などの第一Sn化合物が挙げられる。これらのSn化合物は、一種単独又は二種以上混合して用いることができる。
Agを含まないはんだ合金ではんだ層が形成されたCu核ボールと、Agを含むはんだ合金ではんだ層が形成されたCu核ボールと、Agを含まないはんだ合金で形成されたはんだボールと、Agを含むはんだ合金で形成されたはんだボールを作成し、落下等の衝撃に対する強度を測定する落下強度試験と、ヒートサイクルによる伸縮に対する強度を測定するヒートサイクル試験を行った。
次に、真球度が高いCuボールを作製し、このCuボールの表面にはんだ層を形成したCu核ボールのα線量を測定した。
真球度が高いCuボールの作製条件を調査した。純度が99.9%のCuペレット、純度が99.995%以下のCuワイヤー、及び純度が99.995%を超えるCu板を準備した。各々をるつぼの中に投入した後、るつぼの温度を1200℃に昇温し、45分間加熱処理を行い、るつぼ底部に設けたオリフィスから溶融Cuの液滴を滴下し、液滴を冷却してCuボールを造粒した。これにより平均粒径が250μmのCuボールを作製した。作製したCuボールの元素分析結果及び真球度を表3に示す。
以下に、真球度の測定方法を詳述する。真球度はCNC画像測定システムで測定された。装置は、ミツトヨ社製のウルトラクイックビジョン、ULTRA QV350−PROである。
α線量の測定方法は以下の通りである。α線量の測定にはガスフロー比例計数器のα線測定装置を用いた。測定サンプルは300mm×300mmの平面浅底容器にCuボールを敷き詰めたものである。この測定サンプルをα線測定装置内に入れ、PR−10ガスフローにて24時間放置した後、α線量を測定した。
作製したCuボールの元素分析結果、α線量を表2に示す。
技術分野
[0001]
本発明は、Cuボールをはんだ合金で被覆したCu核ボール、Cu核ボールを使用したはんだペースト、Cu核ボールを使用したフォームはんだ、及び、Cu核ボールを使用したはんだ継手に関する。
背景技術
[0002]
近年、小型情報機器の発達により、搭載される電子部品では急速な小型化が進行している。電子部品は、小型化の要求により接続端子の狭小化や実装面積の縮小化に対応するため、裏面に電極が設置されたボールグリッドアレイ(以下、「BGA」と称する)が適用されている。
[0003]
BGAを適用した電子部品には、例えば半導体パッケージがある。半導体パッケージでは、電極を有する半導体チップが樹脂で封止されている。半導体チップの電極には、はんだバンプが形成されている。このはんだバンプは、はんだを球状にしたはんだボールやはんだを柱状にしたはんだカラムを半導体チップの電極に接合することによって形成されている。BGAを適用した半導体パッケージは、各はんだバンプがプリント基板の導電性ランドに接触するように、プリント基板上に置かれ、加熱により溶融したはんだバンプとランドとが接合することにより、プリント基板に搭載される。また、更なる高密度実装の要求に対応するため、半導体パッケージが高さ方向に積み重ねられた3次元高密度実装が検討されている。
[0004]
しかし、3次元高密度実装がなされた半導体パッケージにBGAが適用されると、半導体パッケージの自重によりはんだボールが潰れてしまい、電極間で接続短絡が発生する。これは、高密度実装を行う上での支障となる。
だペースト、フォームはんだ及びはんだ継手を提供することである。
課題を解決するための手段
[0011]
本発明者らは、Agを含まないはんだ合金でCuボールを被覆したCu核ボールでは、Agを含まないはんだ合金で作成されたはんだボールと比べて落下強度が同程度で、ヒートサイクルに対する強度が向上することを知見した。
[0012]
そこで、本発明は次の通りである。
(1)球状の核層と、SnとCuからなるはんだ合金で構成され、核層を被覆するはんだ層とを備えたCu核ボールであって、核層は、Cuの純度が99.9%以上99.995%以下であり、PbまたはBiのいずれかの含有量、あるいは、PbおよびBiの合計の含有量が1ppm以上であり、Uの含有量が5ppb以下であり、Thの含有量が5ppb以下であり、真球度が0.95以上であり、放射されるα線量が0.0200cph/cm2以下であり、はんだ層は、Uの含有量が5ppb以下であり、Thの含有量が5ppb以下であり、Cu核ボールから放射されるα線量が0.0200cph/cm2以下であるCu核ボール。
[0013]
(2)はんだ層は、Cuを0.1%以上3.0%以下で含み、残部がSnと不純物から構成される、上記(1)に記載のCu核ボール。
[0014]
(3)Ni及びCoから選択される1元素以上からなる層で被覆された上記核層が、上記はんだ層で被覆される、上記(2)に記載のCu核ボール。
[0015]
[0016]
(5)上記(1)〜上記(3)のいずれか1つに記載のCu核ボールを使用したはんだペースト。
[0017]
(6)上記(1)〜上記(3)のいずれか1つに記載のCu核ボールを使用したフォームはんだ。
[0018]
(7)上記(1)〜上記(3)のいずれか1つに記載のCu核ボールを使用したはんだ継手。
[0019]
[0020]
[0021]
[0022]
[0023]
発明の効果
[0024]
本発明では、落下強度、ヒートサイクルに対する強度とも、必要とされる所定の強度を得ることができる。Agを含まないはんだ合金で作成されたはんだボールでは、Agを含むはんだ合金で作成されたはんだボールと比較して、ヒートサイクルに対する強度が低下していたが、本発明では、Agを含むはんだ合金で作成されたCu核ボールと比較して、必要とされる落下強度が得られることに加えて、ヒートサイクルに対する強度が向上する。
図面の簡単な説明
[0025]
[図1]本実施の形態のCu核ボールの模式的な構造を示す断面図である。
[図2]本実施の形態のCu核カラムの模式的な構造を示す側断面図である。
[図3]本実施の形態のCu核カラムの模式的な構造を示す平面断面図である。
発明を実施するための形態
[0026]
本発明をCu核ボールに適用した場合について以下により詳しく説明する。本明細書において、Cu核ボールの組成に関する単位(ppm、ppb、及び%)は、特に指定しない限り質量に対する割合(質量ppm、質量ppb、及び質量%)を表す。
[0027]
図1は、本実施の形態のCu核ボールの模式的な構造を示す断面図である。本実施の形態のCu核ボール1は、Cuボール2と、Cuボールを被覆す
るはんだ層3で構成される。
[0028]
はんだ層3は、Cuの添加量を0.1%以上3.0%以下とし、残部をSnとしたAgを含まないはんだ合金で構成され、Cuボール2の表面にはんだめっきを行うことではんだ層3が形成される。Cuボール2は、Cu、あるいは、Cuを50%以上含むCu合金で構成される。
[0029]
Cu核ボール1は、Cuボール2とはんだ層3との間に、拡散防止層4が形成される。拡散防止層4は、Ni、あるいはCo等から選択される1元素以上で構成され、Cuボール2を構成するCuがはんだ層3に拡散することを防止する。
[0030]
Cuボール2の表面に、Cuの添加量を0.1%以上3.0%以下とし、残部をSnとしたAgを含まない組成のはんだ合金ではんだ層3が形成されたCu核ボール1では、接合対象物がCu層の表面にプリフラックス処理が施されたCu−OSP基板であっても、Cu層の表面に電解Ni/Auめっきが施された電解Ni/Auめっき基板であっても、落下等の衝撃に対する強度、及び、ヒートサイクルと称される温度変化による伸縮に対する強度とも、必要とされる所定の強度を得ることができる。
[0031]
Agを含まないはんだ合金で作成されたはんだボールでは、Agを含むはんだ合金で作成されたはんだボールと比較して、ヒートサイクルに対する強度が低下する。本実施の形態のCu核ボール1では、はんだ層3がAgを含まないはんだ合金で形成されているが、Agを含むはんだ合金で作成されたCu核ボールと比較して、必要とされる落下強度が得られることに加えて、ヒートサイクルに対する強度が向上する。
[0032]
Cu核ボール1を利用したはんだバンプでは、半導体パッケージの重量がはんだバンプに加わっても、はんだ合金の融点では溶融しないCuボールにより半導体パッケージを支えることができる。したがって、半導体パッケージの自重によりはんだバンプが潰れることがない。
[0033]
ところで、電子部品の小型化は高密度実装を可能にするが、高密度実装はソフトエラーという問題を引き起こすことになった。ソフトエラーは半導体
(1)球状の核層と、SnとCuからなるはんだ合金で構成され、核層を被覆するはんだ層とを備えたCu核ボールであって、核層は、Cuの純度が99.9%以上99.995%以下であり、PbまたはBiのいずれかの含有量、あるいは、PbおよびBiの合計の含有量が1ppm以上であり、Uの含有量が5ppb以下であり、Thの含有量が5ppb以下であり、真球度が0.95以上であり、放射されるα線量が0.0200cph/cm 2 以下であり、はんだ層は、Uの含有量が5ppb以下であり、Thの含有量が5ppb以下であり、Cu核ボールから放射されるα線量が0.0200cph/cm 2 以下であるCu核ボール。
Claims (12)
- Cu、あるいは、Cuを50%以上含むCu合金で構成される核層と、
SnとCuからなるはんだ合金で構成され、前記核層を被覆するはんだ層と
を備えたことを特徴とするCu核ボール。 - 前記はんだ層は、Cuを0.1%以上3.0%以下で含み、残部がSnと不純物から構成される
ことを特徴とする請求項1に記載のCu核ボール。 - Ni及びCoから選択される1元素以上からなる層で被覆された上記核層が、上記はんだ層で被覆される
ことを特徴とする請求項2に記載のCu核ボール。 - α線量が0.0200cph/cm2以下である
ことを特徴とする請求項3に記載のCu核ボール。 - 請求項1〜4のいずれか1項に記載のCu核ボールを使用した
ことを特徴とするはんだペースト。 - 請求項1〜4のいずれか1項に記載のCu核ボールを使用した
ことを特徴とするフォームはんだ。 - 請求項1〜4のいずれか1項に記載のCu核ボールを使用した
ことを特徴とするはんだ継手。 - Cu、あるいは、Cuを50%以上含むCu合金で構成される核層と、
SnとCuからなるはんだ合金で構成され、前記核層を被覆するはんだ層と
を備えたことを特徴とするCu核カラム。 - 前記はんだ層は、Cuを0.1%以上3.0%以下で含み、残部がSnと不純物から構成される
ことを特徴とする請求項8に記載のCu核カラム。 - Ni及びCoから選択される1元素以上からなる層で被覆された上記核層が、上記はんだ層で被覆される
ことを特徴とする請求項9に記載のCu核カラム。 - α線量が0.0200cph/cm2以下である
ことを特徴とする請求項10に記載のCu核カラム。 - 請求項8〜11のいずれか1項に記載のCu核カラムを使用した
ことを特徴とするはんだ継手。
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JP2005002428A (ja) * | 2003-06-12 | 2005-01-06 | Hitachi Metals Ltd | 金属微小球 |
JP2005036301A (ja) * | 2003-06-23 | 2005-02-10 | Allied Material Corp | 微小金属球及びその製造方法 |
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JP5408401B1 (ja) * | 2013-06-19 | 2014-02-05 | 千住金属工業株式会社 | Cu核ボール |
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KR101858884B1 (ko) | 2018-05-16 |
US10322472B2 (en) | 2019-06-18 |
TW201537710A (zh) | 2015-10-01 |
EP3067151B1 (en) | 2018-08-08 |
EP3067151A4 (en) | 2017-07-19 |
EP3067151A1 (en) | 2016-09-14 |
US20160368105A1 (en) | 2016-12-22 |
WO2015068685A1 (ja) | 2015-05-14 |
CN105873716A (zh) | 2016-08-17 |
CN105873716B (zh) | 2018-11-09 |
JP5967316B2 (ja) | 2016-08-24 |
TWI612633B (zh) | 2018-01-21 |
KR20160079079A (ko) | 2016-07-05 |
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