JP5585750B1 - Cu核ボール、はんだ継手、フォームはんだ、およびはんだペースト - Google Patents
Cu核ボール、はんだ継手、フォームはんだ、およびはんだペースト Download PDFInfo
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- JP5585750B1 JP5585750B1 JP2014523134A JP2014523134A JP5585750B1 JP 5585750 B1 JP5585750 B1 JP 5585750B1 JP 2014523134 A JP2014523134 A JP 2014523134A JP 2014523134 A JP2014523134 A JP 2014523134A JP 5585750 B1 JP5585750 B1 JP 5585750B1
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- ball
- less
- metal layer
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
- B23K35/02—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by mechanical features, e.g. shape
- B23K35/0222—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by mechanical features, e.g. shape for use in soldering, brazing
- B23K35/0233—Sheets, foils
- B23K35/0238—Sheets, foils layered
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F1/00—Metallic powder; Treatment of metallic powder, e.g. to facilitate working or to improve properties
- B22F1/17—Metallic particles coated with metal
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
- B23K35/22—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
- B23K35/24—Selection of soldering or welding materials proper
- B23K35/30—Selection of soldering or welding materials proper with the principal constituent melting at less than 1550 degrees C
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- B—PERFORMING OPERATIONS; TRANSPORTING
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- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
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- B23K35/30—Selection of soldering or welding materials proper with the principal constituent melting at less than 1550 degrees C
- B23K35/302—Cu as the principal constituent
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- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22F—CHANGING THE PHYSICAL STRUCTURE OF NON-FERROUS METALS AND NON-FERROUS ALLOYS
- C22F1/00—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working
- C22F1/08—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working of copper or alloys based thereon
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Abstract
Cu核ボール11は、Cuボール1と、このCuボール1表面を被覆する金属層2とを備える。金属層2は、Ni,Co,Feから選択される1以上の元素からなる。Cuボール1は、純度が99.9%以上99.995%以下であり、Uの含有量が5ppb以下であり、Thの含有量が5ppb以下であり、PbおよびBiの少なくとも一方の含有量の合計量が1ppm以上であり、真球度が0.95以上であり、α線量が0.0200cph/cm2以下である。
Description
(1)Cuボールと、
前記Cuボールの表面を被覆するNi、Co、Feから選択される1以上の元素からなる金属層と、を備え、
前記Cuボールは、純度が99.9%以上99.995%以下であり、Uの含有量が5ppb以下であり、Thの含有量が5ppb以下であり、PbおよびBiの少なくとも一方の含有量の合計量が1ppm以上であり、真球度が0.95以上であり、α線量が0.0200cph/cm2以下である
ことを特徴とするCu核ボール。
前記Cuボールの表面を被覆するNi、Co、Feから選択される1以上の元素からなる金属層と、を備え、
前記Cuボールは、純度が99.9%以上99.995%以下であり、PbおよびBiの少なくとも一方の含有量の合計量が1ppm以上であり、真球度が0.95以上であり、
前記金属層は、Uの含有量が5ppb以下であり、Thの含有量が5ppb以下であり、α線量が0.0200cph/cm2以下である
ことを特徴とするCu核ボール。
前記Cuボールの表面を被覆するNi、Co、Feから選択される1以上の元素からなる金属層と、
前記金属層の表面を被覆する、前記金属層に含有されていないNi、Co、Feから選択される1以上の元素からなる第2金属層と、備え、
前記Cuボールは、純度が99.9%以上99.995%以下であり、PbおよびBiの少なくとも一方の含有量の合計量が1ppm以上であり、真球度が0.95以上であり、
前記第2金属層は、Uの含有量が5ppb以下であり、Thの含有量が5ppb以下であり、α線量が0.0200cph/cm2以下である
ことを特徴とするCu核ボール。
前記Cuボールの表面を被覆するNi、Co、Feから選択される1以上の元素からなる金属層と、
前記金属層の表面を被覆するはんだ層と、を備え、
前記Cuボールは、純度が99.9%以上99.995%以下であり、PbおよびBiの少なくとも一方の含有量の合計量が1ppm以上であり、真球度が0.95以上であり、
前記はんだ層は、Uの含有量が5ppb以下であり、Thの含有量が5ppb以下であり、α線量が0.0200cph/cm2以下である
ことを特徴とするCu核ボール。
前記Cuボールの表面を被覆するNi、Co、Feから選択される1以上の元素からなる金属層と、
前記金属層の表面を被覆する、前記金属層に含有されていないNi、Co、Feから選択される1以上の元素からなる第2金属層と、
前記第2金属層の表面を被覆するはんだ層と、備え、
前記Cuボールは、純度が99.9%以上99.995%以下であり、PbおよびBiの少なくとも一方の含有量の合計量が1ppm以上であり、真球度が0.95以上であり、
前記はんだ層は、Uの含有量が5ppb以下であり、Thの含有量が5ppb以下であり、α線量が0.0200cph/cm2以下である
ことを特徴とするCu核ボール。
ことを特徴とする上記(1)〜(5)に記載のCu核ボール。
ことを特徴とする上記(1)〜(5)に記載のCu核ボール。
ことを特徴とする上記(1)〜(5)の何れか一項に記載のCu核ボール。
まず、本発明に係る金属層2について詳しく説明する。金属層2は、例えば、Niめっき層、Coめっき層、Feめっき層、またはNi,Co,Feの元素を2以上含むめっき層からなる。金属層2は、Cu核ボール11がはんだバンプに用いられる際にはんだ付けの温度で溶融せずに残り、はんだ継手の高さに寄与することから、真球度が高くて直径のバラツキが少なく、かつ、α線量が低くなるように構成される。
本発明に係るCu核ボール11のα線量は0.0200cph/cm2以下である。これは、電子部品の高密度実装においてソフトエラーが問題にならない程度のα線量である。本発明に係るCu核ボール11のα線量は、Cu核ボール11を構成する金属層2のα線量が0.0200cph/cm2以下であることにより達成される。したがって、本発明に係るCu核ボール11は、このような金属層2で被覆されているために低いα線量を示す。α線量は、更なる高密度実装でのソフトエラーを抑制する観点から、好ましくは0.0020cph/cm2以下であり、より好ましくは0.0010cph/cm2以下である。金属層2のUおよびThの含有量は、Cuボール1のα線量を0.0200cph/cm2以下とするため、各々5ppb以下である。また、現在または将来の高密度実装でのソフトエラーを抑制する観点から、UおよびThの含有量は、好ましくは、各々2ppb以下である。
Cu核ボール11は、Cuボール1の表面を強磁性体からなる金属層2により被覆するので、ボール全体として磁性を有する。このように、Cu核ボール11に磁性を付与することで、以下のような効果を得ることができる。すなわち、振り込み方法によりCu核ボール11を電極上に実装する場合に、ステージ内に設けた磁石の磁力を利用することができ、基板に載置されたマスク上に散布されたCu核ボール11をマスクの開口部に的確に振り込むことができる。これにより、従来の振り込み手段のようにヘラや刷毛をCu核ボール11に直接的に接触させることがないので、振り込み手段によるCu核ボール11の損傷や変形、異物混入を防止することができる。また、磁石の作用によりCu核ボール11の位置を調整できるので、Cu核ボール11の電極上への実装時におけるアライメント性も確保できる。
リフロー時において、Cu核ボール11と電極間を接合するために使用するはんだ(ペースト)中にCuボール1のCuが拡散するすると、はんだ中および接続界面に硬くて脆いCu6Sn5、Cu3Snの金属間化合物が多量に形成され、衝撃を受けたときに亀裂が進展し、接続部を破壊してしまう。そのため、十分な接続強度を得るために、Cuボール1からはんだへのCuの拡散を抑制(バリア)することが必要である。本実施例では、バリア層として機能する金属層2をCuボール1の表面に形成するので、Cuボール1のCuがペーストのはんだ中に拡散することを抑制できる。
金属層2の組成は、単一のNi、CoまたはFeにより金属層2を構成した場合、不可避不純物を除けば、Ni、Co、Feが100%である。また、金属層2に使用する金属は単一金属に限られず、Ni、CoまたはFeの中から2元素以上を組み合わせた合金を使用しても良い。さらに、金属層2で選択した元素以外のNi、Co、Feから構成される単体金属または合金からなる第2金属層を金属層2の表面に被覆してもよい。金属層2または第2金属層には、Ni、Co、Feが持つバリア機能や磁性機能に影響を及ぼさない程度の他の元素を所定量添加してもよい。添加する元素としては、例えば、Sn、Ag、Cu、In、Sb、Ge、P等が挙げられる。金属層2または第2金属層の膜厚Tは、例えば1μm〜20μmである。
次に、本発明を構成するCuボール1について詳しく説明する。Cuボール1は、Cu核ボール11がはんだバンプに用いられる際にはんだ付けの温度で溶融せずに残り、はんだ継手の高さに寄与することから、真球度が高くて直径のバラツキが少なく、かつ、α線量が低くなるように構成される。
UおよびThは放射性同位元素であり、ソフトエラーを抑制するにはこれらの含有量を抑える必要がある。UおよびThの含有量は、Cuボール1のα線量を0.0200cph/cm2以下とするため、各々5ppb以下にする必要がある。また、現在または将来の高密度実装でのソフトエラーを抑制する観点から、UおよびThの含有量は、好ましくは、各々2ppb以下である。
本発明を構成するCuボール1は純度が99.9%以上99.995%以下であることが好ましい。Cuボール1の純度がこの範囲であると、Cuボール1の真球度が高まるための十分な量の結晶核を溶融Cu中に確保することができる。真球度が高まる理由は以下のように詳述される。
本発明を構成するCuボール1のα線量は、好ましくは0.0200cph/cm2以下である。これは、電子部品の高密度実装においてソフトエラーが問題にならない程度のα線量である。本発明では、Cuボール1を製造するために通常行っている工程に加え再度加熱処理を施している。このため、Cuの原材料にわずかに残存する210Poが揮発し、Cuの原材料と比較してCuボール1の方がより一層低いα線量を示す。α線量は、更なる高密度実装でのソフトエラーを抑制する観点から、好ましくは0.0020cph/cm2以下であり、より好ましくは0.0010cph/cm2以下である。
本発明を構成するCuボール1は、不純物元素としてSn、Sb、Bi、Zn、As、Ag、Cd、Ni、Pb、Au、P、S、U、Thなどを含有するが、特にPbおよびBiの少なくとも一方の含有量が合計で1ppm以上含有することが好ましい。本発明では、はんだ継手の形成時にCuボール1が露出した場合であっても、α線量を低減する上でCuボール1のPbおよびBiの少なくとも一方の含有量を極限まで低減する必要がない。これは以下の理由による。
本発明を構成するCuボール1は、基板間の適切な空間(スタンドオフ高さ)を制御する観点から真球度が0.95以上である。Cuボール1の真球度が0.95未満であると、Cuボール1が不定形状になるため、バンプ形成時に高さが不均一なバンプが形成され、接合不良が発生する可能性が高まる。さらに、Cu核ボール11を電極に搭載してリフローを行う際、Cu核ボール11が位置ずれを起こしてしまい、セルフアライメント性も悪化する。真球度は、より好ましくは0.990以上である。本発明において、真球度とは真球からのずれを表す。真球度は、例えば、最小二乗中心法(LSC法)、最小領域中心法(MZC法)、最大内接中心法(MIC法)、最小外接中心法(MCC法)など種々の方法で求められる。詳しくは、真球度とは、500個の各Cuボールの直径を長径で割った際に算出される算術平均値であり、値が上限である1.00に近いほど真球に近いことを表す。本発明での長径の長さ、および直径の長さとは、ミツトヨ社製のウルトラクイックビジョン、ULTRA QV350−PRO測定装置によって測定された長さをいう。
本発明を構成するCuボール1の直径は1〜1000μmであることが好ましい。この範囲にあると、球状のCuボール1を安定して製造でき、また、端子間が狭ピッチである場合の接続短絡を抑制することができる。
真球度が高いCuボールの作製条件を調査した。純度が99.9%のCuペレット、純度が99.995%以下のCuワイヤー、および純度が99.995%を超えるCu板を準備した。各々をるつぼの中に投入した後、るつぼの温度を1200℃に昇温させ、45分間加熱処理を行った。次に、るつぼ底部に設けたオリフィスから溶融Cuを滴下し、生成した液滴を冷却してCuボールを造球し、平均粒径が250μmのCuボールを作製した。元素分析は、UおよびThについては誘導結合プラズマ質量分析(ICP−MS分析)、その他の元素については誘導結合プラズマ発光分光分析(ICP−AES分析)により行われた。
真球度は、CNC画像測定システムにより測定した。装置は、ミツトヨ社製のウルトラクイックビジョン、ULTRA QV350−PROを用いた。
α線量の測定方法は以下の通りである。α線量の測定にはガスフロー比例計数器のα線測定装置を用いた。測定サンプルは300mm×300mmの平面浅底容器にCuボールを敷き詰めたものである。この測定サンプルをα線測定装置内に入れ、PR−10ガスフローにて24時間放置した後、α線量を測定した。
2 金属層
11 Cu核ボール
Claims (11)
- Cuボールと、
前記Cuボールの表面を被覆するNi、Co、Feから選択される1以上の元素からなる金属層と、を備え、
前記Cuボールは、純度が99.9%以上99.995%以下であり、Uの含有量が5ppb以下であり、Thの含有量が5ppb以下であり、PbおよびBiの少なくとも一方の含有量の合計量が1ppm以上であり、真球度が0.95以上であり、α線量が0.0200cph/cm2以下である
ことを特徴とするCu核ボール。 - Cuボールと、
前記Cuボールの表面を被覆するNi、Co、Feから選択される1以上の元素からなる金属層と、を備え、
前記Cuボールは、純度が99.9%以上99.995%以下であり、PbおよびBiの少なくとも一方の含有量の合計量が1ppm以上であり、真球度が0.95以上であり、
前記金属層は、Uの含有量が5ppb以下であり、Thの含有量が5ppb以下であり、α線量が0.0200cph/cm2以下である
ことを特徴とするCu核ボール。 - Cuボールと、
前記Cuボールの表面を被覆するNi、Co、Feから選択される1以上の元素からなる金属層と、
前記金属層の表面を被覆する、前記金属層に含有されていないNi、Co、Feから選択される1以上の元素からなる第2金属層と、備え、
前記Cuボールは、純度が99.9%以上99.995%以下であり、PbおよびBiの少なくとも一方の含有量の合計量が1ppm以上であり、真球度が0.95以上であり、
前記第2金属層は、Uの含有量が5ppb以下であり、Thの含有量が5ppb以下であり、α線量が0.0200cph/cm2以下である
ことを特徴とするCu核ボール。 - Cuボールと、
前記Cuボールの表面を被覆するNi、Co、Feから選択される1以上の元素からなる金属層と、
前記金属層の表面を被覆するはんだ層と、を備え、
前記Cuボールは、純度が99.9%以上99.995%以下であり、PbおよびBiの少なくとも一方の含有量の合計量が1ppm以上であり、真球度が0.95以上であり、
前記はんだ層は、Uの含有量が5ppb以下であり、Thの含有量が5ppb以下であり、α線量が0.0200cph/cm2以下である
ことを特徴とするCu核ボール。 - Cuボールと、
前記Cuボールの表面を被覆するNi、Co、Feから選択される1以上の元素からなる金属層と、
前記金属層の表面を被覆する、前記金属層に含有されていないNi、Co、Feから選択される1以上の元素からなる第2金属層と、
前記第2金属層の表面を被覆するはんだ層と、備え、
前記Cuボールは、純度が99.9%以上99.995%以下であり、PbおよびBiの少なくとも一方の含有量の合計量が1ppm以上であり、真球度が0.95以上であり、
前記はんだ層は、Uの含有量が5ppb以下であり、Thの含有量が5ppb以下であり、α線量が0.0200cph/cm2以下である
ことを特徴とするCu核ボール。 - α線量が0.0200cph/cm2以下である
ことを特徴とする請求項1〜5のいずれか一項に記載のCu核ボール。 - α線量が0.0010cph/cm2以下である
ことを特徴とする請求項1〜5のいずれか一項に記載のCu核ボール。 - 前記金属層、前記第2金属層、または前記はんだ層の表面を被覆するフラックス層をさらに備える
ことを特徴とする請求項1〜5の何れか一項に記載のCu核ボール。 - 請求項1〜8のいずれか1項に記載のCu核ボールを用いた
ことを特徴とするはんだ継手。 - 請求項1〜8のいずれか1項に記載のCu核ボールを用いた
ことを特徴とするフォームはんだ。 - 請求項1〜8のいずれか1項に記載のCu核ボールを用いた
ことを特徴とするはんだペースト。
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