JPWO2015064697A1 - 受発光素子およびこれを用いたセンサ装置 - Google Patents

受発光素子およびこれを用いたセンサ装置 Download PDF

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Publication number
JPWO2015064697A1
JPWO2015064697A1 JP2015545298A JP2015545298A JPWO2015064697A1 JP WO2015064697 A1 JPWO2015064697 A1 JP WO2015064697A1 JP 2015545298 A JP2015545298 A JP 2015545298A JP 2015545298 A JP2015545298 A JP 2015545298A JP WO2015064697 A1 JPWO2015064697 A1 JP WO2015064697A1
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JP
Japan
Prior art keywords
semiconductor substrate
electrode
electrode pad
light emitting
receiving element
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2015545298A
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English (en)
Japanese (ja)
Inventor
直樹 藤本
直樹 藤本
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Kyocera Corp
Original Assignee
Kyocera Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kyocera Corp filed Critical Kyocera Corp
Publication of JPWO2015064697A1 publication Critical patent/JPWO2015064697A1/ja
Pending legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F55/00—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto
    • H10F55/20—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto wherein the electric light source controls the radiation-sensitive semiconductor devices, e.g. optocouplers
    • H10F55/25—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto wherein the electric light source controls the radiation-sensitive semiconductor devices, e.g. optocouplers wherein the radiation-sensitive devices and the electric light source are all semiconductor devices
    • H10F55/255—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto wherein the electric light source controls the radiation-sensitive semiconductor devices, e.g. optocouplers wherein the radiation-sensitive devices and the electric light source are all semiconductor devices formed in, or on, a common substrate
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01S—RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
    • G01S7/00—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00
    • G01S7/48—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00 of systems according to group G01S17/00
    • G01S7/481—Constructional features, e.g. arrangements of optical elements
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03G—ELECTROGRAPHY; ELECTROPHOTOGRAPHY; MAGNETOGRAPHY
    • G03G15/00—Apparatus for electrographic processes using a charge pattern
    • G03G15/06—Apparatus for electrographic processes using a charge pattern for developing
    • G03G15/08—Apparatus for electrographic processes using a charge pattern for developing using a solid developer, e.g. powder developer
    • G03G15/0822—Arrangements for preparing, mixing, supplying or dispensing developer
    • G03G15/0848—Arrangements for testing or measuring developer properties or quality, e.g. charge, size, flowability
    • G03G15/0849—Detection or control means for the developer concentration
    • G03G15/0851—Detection or control means for the developer concentration the concentration being measured by electrical means
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03G—ELECTROGRAPHY; ELECTROPHOTOGRAPHY; MAGNETOGRAPHY
    • G03G15/00—Apparatus for electrographic processes using a charge pattern
    • G03G15/50—Machine control of apparatus for electrographic processes using a charge pattern, e.g. regulating differents parts of the machine, multimode copiers, microprocessor control
    • G03G15/5033—Machine control of apparatus for electrographic processes using a charge pattern, e.g. regulating differents parts of the machine, multimode copiers, microprocessor control by measuring the photoconductor characteristics, e.g. temperature, or the characteristics of an image on the photoconductor
    • G03G15/5041—Detecting a toner image, e.g. density, toner coverage, using a test patch
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/14—Shape of semiconductor bodies; Shapes, relative sizes or dispositions of semiconductor regions within semiconductor bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/206—Electrodes for devices having potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/40—Optical elements or arrangements
    • H10F77/407—Optical elements or arrangements indirectly associated with the devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
    • H10H29/10—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Networks & Wireless Communication (AREA)
  • Radar, Positioning & Navigation (AREA)
  • Remote Sensing (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Photo Coupler, Interrupter, Optical-To-Optical Conversion Devices (AREA)
  • Led Devices (AREA)
JP2015545298A 2013-10-30 2014-10-30 受発光素子およびこれを用いたセンサ装置 Pending JPWO2015064697A1 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2013225132 2013-10-30
JP2013225132 2013-10-30
PCT/JP2014/078913 WO2015064697A1 (ja) 2013-10-30 2014-10-30 受発光素子およびこれを用いたセンサ装置

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2017251284A Division JP2018046314A (ja) 2013-10-30 2017-12-27 受発光素子およびこれを用いたセンサ装置

Publications (1)

Publication Number Publication Date
JPWO2015064697A1 true JPWO2015064697A1 (ja) 2017-03-09

Family

ID=53004294

Family Applications (2)

Application Number Title Priority Date Filing Date
JP2015545298A Pending JPWO2015064697A1 (ja) 2013-10-30 2014-10-30 受発光素子およびこれを用いたセンサ装置
JP2017251284A Pending JP2018046314A (ja) 2013-10-30 2017-12-27 受発光素子およびこれを用いたセンサ装置

Family Applications After (1)

Application Number Title Priority Date Filing Date
JP2017251284A Pending JP2018046314A (ja) 2013-10-30 2017-12-27 受発光素子およびこれを用いたセンサ装置

Country Status (5)

Country Link
US (1) US20160284921A1 (enExample)
EP (1) EP3065185A4 (enExample)
JP (2) JPWO2015064697A1 (enExample)
CN (1) CN105745765A (enExample)
WO (1) WO2015064697A1 (enExample)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP3440998B1 (en) * 2016-04-04 2022-11-16 Kyocera Corporation Measurement sensor package and measurement sensor
CN106653934A (zh) * 2016-10-20 2017-05-10 天津大学 一种基于标准cmos工艺的混合光互连系统
US11437539B2 (en) * 2020-09-30 2022-09-06 Lite-On Singapore Pte. Ltd. Optical sensor package and manufacturing method for the same
US12272721B2 (en) 2021-02-25 2025-04-08 Asahi Kasei Microdevices Corporation Optical element and optical concentration measuring apparatus

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05275731A (ja) * 1992-03-25 1993-10-22 Sharp Corp フォトダイオード
JPH0745912A (ja) * 1993-07-30 1995-02-14 Sony Corp 半導体レーザ装置
WO2002029904A1 (en) * 2000-09-29 2002-04-11 Sanyo Electric Co., Ltd. Receiving optics and photosemiconductor device having the same
JP2006060103A (ja) * 2004-08-23 2006-03-02 Sharp Corp 半導体受光装置および紫外線センサー機器
JP2010278239A (ja) * 2009-05-28 2010-12-09 Kyocera Corp 受発光素子及びその製造方法、並びに受発光素子を備えた光センサ装置
WO2013065668A1 (ja) * 2011-10-31 2013-05-10 京セラ株式会社 受発光一体型素子を用いた受発光装置およびセンサ装置

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4945422U (enExample) * 1972-07-25 1974-04-20
JP3012151B2 (ja) 1994-07-28 2000-02-21 沖電気工業株式会社 受発光素子及びその製造方法
US6148016A (en) * 1997-11-06 2000-11-14 The Regents Of The University Of California Integrated semiconductor lasers and photodetectors
JP2004128464A (ja) * 2002-08-01 2004-04-22 Hamamatsu Photonics Kk 半導体位置検出素子
DE10345555A1 (de) * 2003-09-30 2005-05-04 Osram Opto Semiconductors Gmbh Strahlungsemittierendes und -empfangendes Halbleiterbauelement und Verfahren zu dessen Herstellung
JP5294745B2 (ja) * 2008-07-30 2013-09-18 京セラ株式会社 受発光素子アレイ及びこれを備えたセンサ装置
US8263899B2 (en) * 2010-07-01 2012-09-11 Sunpower Corporation High throughput solar cell ablation system
US9130109B2 (en) * 2011-01-20 2015-09-08 Rohm Co., Ltd. Optical apparatus
US8927999B2 (en) * 2011-11-21 2015-01-06 Avogy, Inc. Edge termination by ion implantation in GaN
US9148036B2 (en) * 2012-07-27 2015-09-29 Nidec Corporation Base member of a motor which includes specific surface structure
US9190433B2 (en) * 2013-03-18 2015-11-17 Lite-On Singapore Pte. Ltd. Ambient light sensing with stacked photodiode structure with dual PN junction

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05275731A (ja) * 1992-03-25 1993-10-22 Sharp Corp フォトダイオード
JPH0745912A (ja) * 1993-07-30 1995-02-14 Sony Corp 半導体レーザ装置
WO2002029904A1 (en) * 2000-09-29 2002-04-11 Sanyo Electric Co., Ltd. Receiving optics and photosemiconductor device having the same
JP2006060103A (ja) * 2004-08-23 2006-03-02 Sharp Corp 半導体受光装置および紫外線センサー機器
JP2010278239A (ja) * 2009-05-28 2010-12-09 Kyocera Corp 受発光素子及びその製造方法、並びに受発光素子を備えた光センサ装置
WO2013065668A1 (ja) * 2011-10-31 2013-05-10 京セラ株式会社 受発光一体型素子を用いた受発光装置およびセンサ装置

Also Published As

Publication number Publication date
CN105745765A (zh) 2016-07-06
EP3065185A4 (en) 2017-08-02
US20160284921A1 (en) 2016-09-29
EP3065185A1 (en) 2016-09-07
JP2018046314A (ja) 2018-03-22
WO2015064697A1 (ja) 2015-05-07

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