CN105745765A - 受光发光元件以及使用该受光发光元件的传感器装置 - Google Patents

受光发光元件以及使用该受光发光元件的传感器装置 Download PDF

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Publication number
CN105745765A
CN105745765A CN201480058890.XA CN201480058890A CN105745765A CN 105745765 A CN105745765 A CN 105745765A CN 201480058890 A CN201480058890 A CN 201480058890A CN 105745765 A CN105745765 A CN 105745765A
Authority
CN
China
Prior art keywords
light
emitting element
semiconductor substrate
electrode
electrode pad
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN201480058890.XA
Other languages
English (en)
Chinese (zh)
Inventor
藤本直树
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Kyocera Corp
Original Assignee
Kyocera Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kyocera Corp filed Critical Kyocera Corp
Publication of CN105745765A publication Critical patent/CN105745765A/zh
Pending legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F55/00—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto
    • H10F55/20—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto wherein the electric light source controls the radiation-sensitive semiconductor devices, e.g. optocouplers
    • H10F55/25—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto wherein the electric light source controls the radiation-sensitive semiconductor devices, e.g. optocouplers wherein the radiation-sensitive devices and the electric light source are all semiconductor devices
    • H10F55/255—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto wherein the electric light source controls the radiation-sensitive semiconductor devices, e.g. optocouplers wherein the radiation-sensitive devices and the electric light source are all semiconductor devices formed in, or on, a common substrate
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01S—RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
    • G01S7/00—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00
    • G01S7/48—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00 of systems according to group G01S17/00
    • G01S7/481—Constructional features, e.g. arrangements of optical elements
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03G—ELECTROGRAPHY; ELECTROPHOTOGRAPHY; MAGNETOGRAPHY
    • G03G15/00—Apparatus for electrographic processes using a charge pattern
    • G03G15/06—Apparatus for electrographic processes using a charge pattern for developing
    • G03G15/08—Apparatus for electrographic processes using a charge pattern for developing using a solid developer, e.g. powder developer
    • G03G15/0822—Arrangements for preparing, mixing, supplying or dispensing developer
    • G03G15/0848—Arrangements for testing or measuring developer properties or quality, e.g. charge, size, flowability
    • G03G15/0849—Detection or control means for the developer concentration
    • G03G15/0851—Detection or control means for the developer concentration the concentration being measured by electrical means
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03G—ELECTROGRAPHY; ELECTROPHOTOGRAPHY; MAGNETOGRAPHY
    • G03G15/00—Apparatus for electrographic processes using a charge pattern
    • G03G15/50—Machine control of apparatus for electrographic processes using a charge pattern, e.g. regulating differents parts of the machine, multimode copiers, microprocessor control
    • G03G15/5033—Machine control of apparatus for electrographic processes using a charge pattern, e.g. regulating differents parts of the machine, multimode copiers, microprocessor control by measuring the photoconductor characteristics, e.g. temperature, or the characteristics of an image on the photoconductor
    • G03G15/5041—Detecting a toner image, e.g. density, toner coverage, using a test patch
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/14—Shape of semiconductor bodies; Shapes, relative sizes or dispositions of semiconductor regions within semiconductor bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/206—Electrodes for devices having potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/40—Optical elements or arrangements
    • H10F77/407—Optical elements or arrangements indirectly associated with the devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
    • H10H29/10—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Networks & Wireless Communication (AREA)
  • Radar, Positioning & Navigation (AREA)
  • Remote Sensing (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Photo Coupler, Interrupter, Optical-To-Optical Conversion Devices (AREA)
  • Led Devices (AREA)
CN201480058890.XA 2013-10-30 2014-10-30 受光发光元件以及使用该受光发光元件的传感器装置 Pending CN105745765A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2013-225132 2013-10-30
JP2013225132 2013-10-30
PCT/JP2014/078913 WO2015064697A1 (ja) 2013-10-30 2014-10-30 受発光素子およびこれを用いたセンサ装置

Publications (1)

Publication Number Publication Date
CN105745765A true CN105745765A (zh) 2016-07-06

Family

ID=53004294

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201480058890.XA Pending CN105745765A (zh) 2013-10-30 2014-10-30 受光发光元件以及使用该受光发光元件的传感器装置

Country Status (5)

Country Link
US (1) US20160284921A1 (enExample)
EP (1) EP3065185A4 (enExample)
JP (2) JPWO2015064697A1 (enExample)
CN (1) CN105745765A (enExample)
WO (1) WO2015064697A1 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114965336A (zh) * 2021-02-25 2022-08-30 旭化成微电子株式会社 光学元件和光学式浓度测定装置

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109069043B (zh) * 2016-04-04 2021-06-18 京瓷株式会社 测量传感器用封装件以及测量传感器
CN106653934A (zh) * 2016-10-20 2017-05-10 天津大学 一种基于标准cmos工艺的混合光互连系统
US11437539B2 (en) * 2020-09-30 2022-09-06 Lite-On Singapore Pte. Ltd. Optical sensor package and manufacturing method for the same

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2002029904A1 (en) * 2000-09-29 2002-04-11 Sanyo Electric Co., Ltd. Receiving optics and photosemiconductor device having the same
JP2004128464A (ja) * 2002-08-01 2004-04-22 Hamamatsu Photonics Kk 半導体位置検出素子
JP2010278239A (ja) * 2009-05-28 2010-12-09 Kyocera Corp 受発光素子及びその製造方法、並びに受発光素子を備えた光センサ装置
WO2013065668A1 (ja) * 2011-10-31 2013-05-10 京セラ株式会社 受発光一体型素子を用いた受発光装置およびセンサ装置

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JPS4945422U (enExample) * 1972-07-25 1974-04-20
JPH05275731A (ja) * 1992-03-25 1993-10-22 Sharp Corp フォトダイオード
JPH0745912A (ja) * 1993-07-30 1995-02-14 Sony Corp 半導体レーザ装置
JP3012151B2 (ja) 1994-07-28 2000-02-21 沖電気工業株式会社 受発光素子及びその製造方法
US6148016A (en) * 1997-11-06 2000-11-14 The Regents Of The University Of California Integrated semiconductor lasers and photodetectors
DE10345555A1 (de) * 2003-09-30 2005-05-04 Osram Opto Semiconductors Gmbh Strahlungsemittierendes und -empfangendes Halbleiterbauelement und Verfahren zu dessen Herstellung
JP2006060103A (ja) * 2004-08-23 2006-03-02 Sharp Corp 半導体受光装置および紫外線センサー機器
JP5294745B2 (ja) * 2008-07-30 2013-09-18 京セラ株式会社 受発光素子アレイ及びこれを備えたセンサ装置
US8263899B2 (en) * 2010-07-01 2012-09-11 Sunpower Corporation High throughput solar cell ablation system
WO2012098981A1 (ja) * 2011-01-20 2012-07-26 ローム株式会社 光学装置
US8927999B2 (en) * 2011-11-21 2015-01-06 Avogy, Inc. Edge termination by ion implantation in GaN
US9148036B2 (en) * 2012-07-27 2015-09-29 Nidec Corporation Base member of a motor which includes specific surface structure
US9190433B2 (en) * 2013-03-18 2015-11-17 Lite-On Singapore Pte. Ltd. Ambient light sensing with stacked photodiode structure with dual PN junction

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2002029904A1 (en) * 2000-09-29 2002-04-11 Sanyo Electric Co., Ltd. Receiving optics and photosemiconductor device having the same
JP2004128464A (ja) * 2002-08-01 2004-04-22 Hamamatsu Photonics Kk 半導体位置検出素子
JP2010278239A (ja) * 2009-05-28 2010-12-09 Kyocera Corp 受発光素子及びその製造方法、並びに受発光素子を備えた光センサ装置
WO2013065668A1 (ja) * 2011-10-31 2013-05-10 京セラ株式会社 受発光一体型素子を用いた受発光装置およびセンサ装置

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114965336A (zh) * 2021-02-25 2022-08-30 旭化成微电子株式会社 光学元件和光学式浓度测定装置
US12272721B2 (en) 2021-02-25 2025-04-08 Asahi Kasei Microdevices Corporation Optical element and optical concentration measuring apparatus
CN114965336B (zh) * 2021-02-25 2025-09-05 旭化成微电子株式会社 光学元件和光学式浓度测定装置

Also Published As

Publication number Publication date
EP3065185A4 (en) 2017-08-02
JPWO2015064697A1 (ja) 2017-03-09
EP3065185A1 (en) 2016-09-07
US20160284921A1 (en) 2016-09-29
WO2015064697A1 (ja) 2015-05-07
JP2018046314A (ja) 2018-03-22

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Application publication date: 20160706