JPWO2014021423A1 - 電子デバイス用のパターン形成方法、電子デバイス及びパターン形成装置 - Google Patents

電子デバイス用のパターン形成方法、電子デバイス及びパターン形成装置 Download PDF

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Publication number
JPWO2014021423A1
JPWO2014021423A1 JP2014528219A JP2014528219A JPWO2014021423A1 JP WO2014021423 A1 JPWO2014021423 A1 JP WO2014021423A1 JP 2014528219 A JP2014528219 A JP 2014528219A JP 2014528219 A JP2014528219 A JP 2014528219A JP WO2014021423 A1 JPWO2014021423 A1 JP WO2014021423A1
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Japan
Prior art keywords
pattern
layer
ink
ink material
substrate
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Pending
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JP2014528219A
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English (en)
Japanese (ja)
Inventor
杉原　和佳
和佳 杉原
晋太郎 小倉
晋太郎 小倉
洋史 牛島
洋史 牛島
靖之 日下
靖之 日下
正義 高武
正義 高武
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Electron Ltd
DIC Corp
National Institute of Advanced Industrial Science and Technology AIST
Original Assignee
Tokyo Electron Ltd
DIC Corp
National Institute of Advanced Industrial Science and Technology AIST
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Application filed by Tokyo Electron Ltd, DIC Corp, National Institute of Advanced Industrial Science and Technology AIST filed Critical Tokyo Electron Ltd
Publication of JPWO2014021423A1 publication Critical patent/JPWO2014021423A1/ja
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/468—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics
    • H10K10/471—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics the gate dielectric comprising only organic materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/288—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/12—Deposition of organic active material using liquid deposition, e.g. spin coating
    • H10K71/13—Deposition of organic active material using liquid deposition, e.g. spin coating using printing techniques, e.g. ink-jet printing or screen printing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/60—Forming conductive regions or layers, e.g. electrodes
    • H10K71/611—Forming conductive regions or layers, e.g. electrodes using printing deposition, e.g. ink jet printing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/10—Organic polymers or oligomers
    • H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
    • H10K85/113—Heteroaromatic compounds comprising sulfur or selene, e.g. polythiophene
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1306—Field-effect transistor [FET]
    • H01L2924/13069—Thin film transistor [TFT]

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Thin Film Transistor (AREA)
  • Application Of Or Painting With Fluid Materials (AREA)
JP2014528219A 2012-08-01 2013-08-01 電子デバイス用のパターン形成方法、電子デバイス及びパターン形成装置 Pending JPWO2014021423A1 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2012171401 2012-08-01
JP2012171401 2012-08-01
PCT/JP2013/070888 WO2014021423A1 (ja) 2012-08-01 2013-08-01 電子デバイス用のパターン形成方法、電子デバイス及びパターン形成装置

Publications (1)

Publication Number Publication Date
JPWO2014021423A1 true JPWO2014021423A1 (ja) 2016-07-21

Family

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JP2014528219A Pending JPWO2014021423A1 (ja) 2012-08-01 2013-08-01 電子デバイス用のパターン形成方法、電子デバイス及びパターン形成装置

Country Status (4)

Country Link
JP (1) JPWO2014021423A1 (zh)
KR (1) KR20150037929A (zh)
TW (1) TW201417191A (zh)
WO (1) WO2014021423A1 (zh)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6452189B2 (ja) * 2014-04-01 2019-01-16 東洋紡株式会社 フレキシブル電子デバイスの製造方法
CN111128707B (zh) * 2014-08-26 2023-06-16 株式会社尼康 元件制造方法及转印基板
US10042251B2 (en) * 2016-09-30 2018-08-07 Rohm And Haas Electronic Materials Llc Zwitterionic photo-destroyable quenchers

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007273712A (ja) * 2006-03-31 2007-10-18 Dainippon Ink & Chem Inc 電子部品の製造方法
JP2009239033A (ja) * 2008-03-27 2009-10-15 Toppan Printing Co Ltd 有機薄膜トランジスタまたは／および有機薄膜トランジスタアレイの製造方法と有機薄膜トランジスタ、有機薄膜トランジスタアレイ
JP2010541255A (ja) * 2007-10-01 2010-12-24 コヴィオ インコーポレイテッド 輪郭設計された薄膜デバイス及び構造体
WO2011001499A1 (ja) * 2009-06-30 2011-01-06 Dic株式会社 電子部品の製造方法および該方法で製造された電子部品
JP2011031601A (ja) * 2008-10-23 2011-02-17 Mitsubishi Chemicals Corp 熱線反射膜及びその積層体ならびに熱線反射層形成用塗布液
JP2011108527A (ja) * 2009-11-18 2011-06-02 Institute Of Systems Information Technologies & Nanotechnologies デバイス、薄膜トランジスタおよびその製造方法
JP2011151378A (ja) * 2009-12-21 2011-08-04 Mitsubishi Chemicals Corp 有機半導体用混合物、並びに、有機電子デバイスの作製方法及び有機電子デバイス
JP2011187558A (ja) * 2010-03-05 2011-09-22 Adeka Corp 有機薄膜トランジスタ

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007273712A (ja) * 2006-03-31 2007-10-18 Dainippon Ink & Chem Inc 電子部品の製造方法
JP2010541255A (ja) * 2007-10-01 2010-12-24 コヴィオ インコーポレイテッド 輪郭設計された薄膜デバイス及び構造体
JP2009239033A (ja) * 2008-03-27 2009-10-15 Toppan Printing Co Ltd 有機薄膜トランジスタまたは／および有機薄膜トランジスタアレイの製造方法と有機薄膜トランジスタ、有機薄膜トランジスタアレイ
JP2011031601A (ja) * 2008-10-23 2011-02-17 Mitsubishi Chemicals Corp 熱線反射膜及びその積層体ならびに熱線反射層形成用塗布液
WO2011001499A1 (ja) * 2009-06-30 2011-01-06 Dic株式会社 電子部品の製造方法および該方法で製造された電子部品
JP2011108527A (ja) * 2009-11-18 2011-06-02 Institute Of Systems Information Technologies & Nanotechnologies デバイス、薄膜トランジスタおよびその製造方法
JP2011151378A (ja) * 2009-12-21 2011-08-04 Mitsubishi Chemicals Corp 有機半導体用混合物、並びに、有機電子デバイスの作製方法及び有機電子デバイス
JP2011187558A (ja) * 2010-03-05 2011-09-22 Adeka Corp 有機薄膜トランジスタ

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WO2014021423A1 (ja) 2014-02-06
KR20150037929A (ko) 2015-04-08
TW201417191A (zh) 2014-05-01

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