JPWO2013115051A1 - 半導体装置およびその製造方法 - Google Patents
半導体装置およびその製造方法 Download PDFInfo
- Publication number
- JPWO2013115051A1 JPWO2013115051A1 JP2013556350A JP2013556350A JPWO2013115051A1 JP WO2013115051 A1 JPWO2013115051 A1 JP WO2013115051A1 JP 2013556350 A JP2013556350 A JP 2013556350A JP 2013556350 A JP2013556350 A JP 2013556350A JP WO2013115051 A1 JPWO2013115051 A1 JP WO2013115051A1
- Authority
- JP
- Japan
- Prior art keywords
- electrode
- insulating layer
- transparent electrode
- oxide semiconductor
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 161
- 238000004519 manufacturing process Methods 0.000 title claims description 33
- 239000000758 substrate Substances 0.000 claims abstract description 126
- 239000010410 layer Substances 0.000 claims description 174
- 239000011241 protective layer Substances 0.000 claims description 24
- 238000000034 method Methods 0.000 claims description 22
- 239000012535 impurity Substances 0.000 claims description 15
- 229910007541 Zn O Inorganic materials 0.000 claims description 10
- 230000008569 process Effects 0.000 claims description 9
- 230000009467 reduction Effects 0.000 claims description 5
- 229910052733 gallium Inorganic materials 0.000 claims description 4
- 229910052738 indium Inorganic materials 0.000 claims description 4
- 229910052725 zinc Inorganic materials 0.000 claims description 4
- 238000011946 reduction process Methods 0.000 claims description 3
- 239000010408 film Substances 0.000 description 55
- 239000004973 liquid crystal related substance Substances 0.000 description 37
- 239000003990 capacitor Substances 0.000 description 13
- 239000010936 titanium Substances 0.000 description 11
- 229910004298 SiO 2 Inorganic materials 0.000 description 7
- 239000011159 matrix material Substances 0.000 description 7
- 239000011701 zinc Substances 0.000 description 7
- 229910052581 Si3N4 Inorganic materials 0.000 description 6
- 229910021417 amorphous silicon Inorganic materials 0.000 description 6
- 230000005684 electric field Effects 0.000 description 6
- 229910052751 metal Inorganic materials 0.000 description 6
- 239000002184 metal Substances 0.000 description 6
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 230000003071 parasitic effect Effects 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- 238000004544 sputter deposition Methods 0.000 description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 4
- 238000005229 chemical vapour deposition Methods 0.000 description 4
- 239000011651 chromium Substances 0.000 description 4
- 238000005401 electroluminescence Methods 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 229910052750 molybdenum Inorganic materials 0.000 description 4
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 4
- 239000002356 single layer Substances 0.000 description 4
- 229910052721 tungsten Inorganic materials 0.000 description 4
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 3
- 229910045601 alloy Inorganic materials 0.000 description 3
- 239000000956 alloy Substances 0.000 description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 229910052804 chromium Inorganic materials 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- 230000006866 deterioration Effects 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 150000004767 nitrides Chemical class 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- 238000000206 photolithography Methods 0.000 description 3
- 238000009832 plasma treatment Methods 0.000 description 3
- 229910052715 tantalum Inorganic materials 0.000 description 3
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical group [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- 229910052719 titanium Inorganic materials 0.000 description 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- CXKCTMHTOKXKQT-UHFFFAOYSA-N cadmium oxide Inorganic materials [Cd]=O CXKCTMHTOKXKQT-UHFFFAOYSA-N 0.000 description 2
- CFEAAQFZALKQPA-UHFFFAOYSA-N cadmium(2+);oxygen(2-) Chemical compound [O-2].[Cd+2] CFEAAQFZALKQPA-UHFFFAOYSA-N 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 239000003365 glass fiber Substances 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- 239000004033 plastic Substances 0.000 description 2
- 229920003023 plastic Polymers 0.000 description 2
- 229920000139 polyethylene terephthalate Polymers 0.000 description 2
- 239000005020 polyethylene terephthalate Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 229920000178 Acrylic resin Polymers 0.000 description 1
- 239000004925 Acrylic resin Substances 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 229920012266 Poly(ether sulfone) PES Polymers 0.000 description 1
- 229910020923 Sn-O Inorganic materials 0.000 description 1
- 229910006404 SnO 2 Inorganic materials 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 238000004380 ashing Methods 0.000 description 1
- 229910052795 boron group element Inorganic materials 0.000 description 1
- 229910052800 carbon group element Inorganic materials 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 229920006015 heat resistant resin Polymers 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 239000012784 inorganic fiber Substances 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 239000004745 nonwoven fabric Substances 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 229910052696 pnictogen Inorganic materials 0.000 description 1
- 239000011112 polyethylene naphthalate Substances 0.000 description 1
- -1 polyethylene terephthalate Polymers 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 239000009719 polyimide resin Substances 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 229920005992 thermoplastic resin Polymers 0.000 description 1
- 229920001187 thermosetting polymer Polymers 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/7869—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1222—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer
- H01L27/1225—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer with semiconductor materials not belonging to the group IV of the periodic table, e.g. InGaZnO
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1259—Multistep manufacturing methods
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/45—Ohmic electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/4908—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET for thin film semiconductor, e.g. gate of TFT
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66969—Multistep manufacturing processes of devices having semiconductor bodies not comprising group 14 or group 13/15 materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/7869—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
- H01L29/78693—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate the semiconducting oxide being amorphous
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F2201/00—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00
- G02F2201/40—Arrangements for improving the aperture ratio
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F2202/00—Materials and properties
- G02F2202/10—Materials and properties semiconductor
Abstract
Description
2 第1透明電極
3 ゲート電極
3’ ゲート配線
4a 絶縁層
4b 絶縁層
4c 絶縁層
4 ゲート絶縁層
5 酸化物半導体層
6s ソース電極
6d ドレイン電極
7 第2透明電極
8 層間絶縁層
100A 半導体装置(TFT基板)
Claims (16)
- 基板と、
前記基板の上に形成されたゲート電極および第1透明電極と、
前記ゲート電極および前記第1透明電極の上に形成された第1の絶縁層と、
前記第1の絶縁層の上に形成された酸化物半導体層と、
前記酸化物半導体層に電気的に接続されたソース電極およびドレイン電極と、
前記ドレイン電極と電気的に接続された第2透明電極と
を有し、
前記酸化物半導体層の少なくとも一部は、前記第1の絶縁層を介して前記ゲート電極と重なり、前記第1透明電極の少なくとも一部は、前記第1の絶縁層を介して前記第2透明電極と重なり、かつ、前記酸化物半導体層および前記第2透明電極は、同一の酸化物膜から形成されている、半導体装置。 - 前記第2透明電極の上に前記ドレイン電極が形成され、
前記第2透明電極は前記ドレイン電極に直接接している、請求項1に記載の半導体装置。 - 前記第2透明電極は、前記酸化物半導体層よりも高い濃度で不純物を有する、請求項1または2に記載の半導体装置。
- 前記ゲート電極と前記基板との間に形成された第2の絶縁層をさらに有し、
前記第2の絶縁層は、前記第1透明電極上に形成されている、請求項1から3のいずれかに記載の半導体装置。 - 前記ゲート電極上に形成された第2の絶縁層をさらに有し、
前記第1透明電極は前記第2の絶縁層の上に形成されている、請求項1から3のいずれかに記載の半導体装置。 - 前記ソース電極および前記ドレイン電極の上に形成された絶縁保護層をさらに有し、
前記絶縁保護層は、前記酸化物半導体層のチャネル領域と接するように形成されており、
前記絶縁保護層は、酸化物から形成されている、請求項1から5のいずれかに記載の半導体装置。 - 前記第1の絶縁層は、酸化物絶縁層を含み、
前記酸化物絶縁層は、前記酸化物半導体層と接している、請求項1から6のいずれかに記載の半導体装置。 - 前記酸化物膜は、In、GaおよびZnを含む、請求項1から7のいずれかに記載の半導体装置。
- 基板を用意する工程(a)と、
前記基板上に、ゲート電極および第1透明電極を形成する工程(b)と、
前記ゲート電極および前記第1透明電極の上に第1の絶縁層を形成する工程(c)と、
前記第1の絶縁層の上に酸化物半導体膜を形成する工程(d)と、
前記酸化物半導体膜の上にソース電極およびドレイン電極を形成する工程(e)と、
前記酸化物半導体膜の一部を低抵抗化させる低抵抗化処理を行うことによって、第2透明電極を形成するとともに、低抵抗化されなかった前記酸化物半導体膜の部分からなる酸化物半導体層を形成する工程であって、前記酸化物半導体層の少なくとも一部が前記第1の絶縁層を介して前記ゲート電極と重なり、前記第2透明電極の少なくとも一部が前記第1の絶縁層を介して前記第1透明電極の少なくとも一部と重なる、工程(f)とを包含する、半導体装置の製造方法。 - 前記工程(f)は、前記酸化物半導体膜の前記一部に不純物を注入する工程を含む、請求項9に記載の半導体装置の製造方法。
- 前記工程(b)は、前記基板上に前記第1透明電極を形成し、前記第1透明電極上に第2の絶縁層を形成する工程と、前記第2の絶縁層上に前記ゲート電極を形成する工程とを包含する、請求項9または10に記載の半導体装置の製造方法。
- 前記工程(b)は、前記基板上に前記ゲート電極を形成する工程と、前記ゲート電極上に第2の絶縁層を形成する工程と、前記第2の絶縁層上に前記第1透明電極を形成する工程とを包含する、請求項9または10に記載の半導体装置の製造方法。
- 前記工程(f)は、前記低抵抗化処理を行う前に、前記酸化物半導体膜のチャネル領域を保護する保護層を形成する工程(f2)を含む、請求項9から12のいずれかに記載の半導体装置の製造方法。
- 前記基板の法線方向から見たとき、前記保護層の端部は前記ドレイン電極と重なる、請求項13に記載の半導体装置の製造方法。
- 前記酸化物半導体層はIn−Ga−Zn−O系の半導体を含む請求項1から8のいずれかに記載の半導体装置。
- 前記酸化物半導体膜はIn−Ga−Zn−O系の半導体を含む請求項9から14のいずれかに記載の半導体装置の製造方法。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2013556350A JP5824535B2 (ja) | 2012-01-31 | 2013-01-24 | 半導体装置およびその製造方法 |
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2012018753 | 2012-01-31 | ||
JP2012018753 | 2012-01-31 | ||
JP2013556350A JP5824535B2 (ja) | 2012-01-31 | 2013-01-24 | 半導体装置およびその製造方法 |
PCT/JP2013/051417 WO2013115051A1 (ja) | 2012-01-31 | 2013-01-24 | 半導体装置およびその製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPWO2013115051A1 true JPWO2013115051A1 (ja) | 2015-05-11 |
JP5824535B2 JP5824535B2 (ja) | 2015-11-25 |
Family
ID=48905093
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2013556350A Active JP5824535B2 (ja) | 2012-01-31 | 2013-01-24 | 半導体装置およびその製造方法 |
Country Status (7)
Country | Link |
---|---|
US (1) | US9276126B2 (ja) |
JP (1) | JP5824535B2 (ja) |
CN (1) | CN104094409B (ja) |
MY (1) | MY183237A (ja) |
SG (1) | SG11201404460QA (ja) |
TW (1) | TWI560879B (ja) |
WO (1) | WO2013115051A1 (ja) |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2013183495A1 (ja) | 2012-06-08 | 2013-12-12 | シャープ株式会社 | 半導体装置およびその製造方法 |
WO2013191033A1 (ja) | 2012-06-19 | 2013-12-27 | シャープ株式会社 | 半導体装置およびその製造方法 |
US20150155313A1 (en) * | 2013-11-29 | 2015-06-04 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
TWI662330B (zh) | 2018-04-19 | 2019-06-11 | 友達光電股份有限公司 | 主動元件基板及其製法 |
CN108646489A (zh) * | 2018-06-06 | 2018-10-12 | 深圳市华星光电半导体显示技术有限公司 | 液晶显示器及移动终端 |
JP7305510B2 (ja) | 2019-10-11 | 2023-07-10 | 株式会社ジャパンディスプレイ | 表示装置及び半導体装置 |
JP2022180090A (ja) | 2021-05-24 | 2022-12-06 | 株式会社ジャパンディスプレイ | 表示装置 |
Citations (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH07245405A (ja) * | 1994-03-04 | 1995-09-19 | Matsushita Electric Ind Co Ltd | 薄膜トランジスタの製造方法 |
JP2008040343A (ja) * | 2006-08-09 | 2008-02-21 | Nec Corp | 薄膜トランジスタアレイ、その製造方法及び液晶表示装置 |
JP2009099944A (ja) * | 2007-09-28 | 2009-05-07 | Canon Inc | 薄膜トランジスタ、その製造方法及びそれを用いた表示装置 |
JP2010204656A (ja) * | 2009-02-27 | 2010-09-16 | Beijing Boe Optoelectronics Technology Co Ltd | Tft−lcdアレイ基板及びその製造方法 |
WO2011010415A1 (ja) * | 2009-07-24 | 2011-01-27 | シャープ株式会社 | 薄膜トランジスタ基板の製造方法 |
JP2011077106A (ja) * | 2009-09-29 | 2011-04-14 | Dainippon Printing Co Ltd | 薄膜集積回路装置及びその製造方法 |
JP2011091279A (ja) * | 2009-10-23 | 2011-05-06 | Canon Inc | 薄膜トランジスタの製造方法 |
WO2011134390A1 (zh) * | 2010-04-26 | 2011-11-03 | 北京京东方光电科技有限公司 | Ffs型tft-lcd阵列基板的制造方法 |
JP2013051328A (ja) * | 2011-08-31 | 2013-03-14 | Japan Display Central Co Ltd | アクティブマトリックス型表示素子およびその製造方法 |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20070043098A (ko) * | 2005-10-20 | 2007-04-25 | 삼성전자주식회사 | 어레이 기판 및 이의 제조방법 |
KR101412761B1 (ko) * | 2008-01-18 | 2014-07-02 | 삼성디스플레이 주식회사 | 박막 트랜지스터 기판 및 이의 제조 방법 |
KR20090124527A (ko) * | 2008-05-30 | 2009-12-03 | 삼성모바일디스플레이주식회사 | 박막 트랜지스터, 그의 제조 방법 및 박막 트랜지스터를구비하는 평판 표시 장치 |
JP5500712B2 (ja) | 2009-09-02 | 2014-05-21 | 株式会社ジャパンディスプレイ | 液晶表示パネル |
US20130099227A1 (en) * | 2009-09-11 | 2013-04-25 | Sharp Kabushiki Kaisha | Oxide semiconductor, thin film transistor, and display device |
KR101093424B1 (ko) * | 2009-11-10 | 2011-12-14 | 삼성모바일디스플레이주식회사 | 유기전계발광 표시 장치 및 그의 제조 방법 |
WO2012053415A1 (ja) | 2010-10-18 | 2012-04-26 | シャープ株式会社 | 液晶表示装置 |
KR20120042029A (ko) * | 2010-10-22 | 2012-05-03 | 삼성모바일디스플레이주식회사 | 표시 장치 및 그 제조 방법 |
KR102637010B1 (ko) | 2010-12-03 | 2024-02-16 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 산화물 반도체막 및 반도체 장치 |
-
2013
- 2013-01-24 CN CN201380007460.0A patent/CN104094409B/zh active Active
- 2013-01-24 WO PCT/JP2013/051417 patent/WO2013115051A1/ja active Application Filing
- 2013-01-24 JP JP2013556350A patent/JP5824535B2/ja active Active
- 2013-01-24 MY MYPI2014002202A patent/MY183237A/en unknown
- 2013-01-24 SG SG11201404460QA patent/SG11201404460QA/en unknown
- 2013-01-24 US US14/375,914 patent/US9276126B2/en active Active
- 2013-01-31 TW TW102103813A patent/TWI560879B/zh active
Patent Citations (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH07245405A (ja) * | 1994-03-04 | 1995-09-19 | Matsushita Electric Ind Co Ltd | 薄膜トランジスタの製造方法 |
JP2008040343A (ja) * | 2006-08-09 | 2008-02-21 | Nec Corp | 薄膜トランジスタアレイ、その製造方法及び液晶表示装置 |
JP2009099944A (ja) * | 2007-09-28 | 2009-05-07 | Canon Inc | 薄膜トランジスタ、その製造方法及びそれを用いた表示装置 |
JP2010204656A (ja) * | 2009-02-27 | 2010-09-16 | Beijing Boe Optoelectronics Technology Co Ltd | Tft−lcdアレイ基板及びその製造方法 |
WO2011010415A1 (ja) * | 2009-07-24 | 2011-01-27 | シャープ株式会社 | 薄膜トランジスタ基板の製造方法 |
JP2011077106A (ja) * | 2009-09-29 | 2011-04-14 | Dainippon Printing Co Ltd | 薄膜集積回路装置及びその製造方法 |
JP2011091279A (ja) * | 2009-10-23 | 2011-05-06 | Canon Inc | 薄膜トランジスタの製造方法 |
WO2011134390A1 (zh) * | 2010-04-26 | 2011-11-03 | 北京京东方光电科技有限公司 | Ffs型tft-lcd阵列基板的制造方法 |
JP2013051328A (ja) * | 2011-08-31 | 2013-03-14 | Japan Display Central Co Ltd | アクティブマトリックス型表示素子およびその製造方法 |
Also Published As
Publication number | Publication date |
---|---|
JP5824535B2 (ja) | 2015-11-25 |
CN104094409B (zh) | 2016-11-16 |
US20150041800A1 (en) | 2015-02-12 |
MY183237A (en) | 2021-02-18 |
CN104094409A (zh) | 2014-10-08 |
TWI560879B (en) | 2016-12-01 |
TW201342617A (zh) | 2013-10-16 |
US9276126B2 (en) | 2016-03-01 |
SG11201404460QA (en) | 2014-11-27 |
WO2013115051A1 (ja) | 2013-08-08 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP5824536B2 (ja) | 半導体装置およびその製造方法 | |
JP5824534B2 (ja) | 半導体装置およびその製造方法 | |
TWI623101B (zh) | 半導體裝置及其製造方法 | |
JP5824535B2 (ja) | 半導体装置およびその製造方法 | |
TWI538210B (zh) | 半導體裝置及其製造方法 | |
US9305939B2 (en) | Semiconductor device with oxide layer as transparent electrode | |
WO2013161738A1 (ja) | 半導体装置およびその製造方法 | |
TWI559554B (zh) | 半導體裝置及其製造方法 | |
WO2013151002A1 (ja) | 半導体装置およびその製造方法 | |
TWI532188B (zh) | 半導體裝置及其製造方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20150623 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20150806 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20150915 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20151009 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 5824535 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |