JPWO2013051516A1 - 導電パターンの形成方法、導電パターン基板及びタッチパネルセンサ - Google Patents
導電パターンの形成方法、導電パターン基板及びタッチパネルセンサ Download PDFInfo
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- JPWO2013051516A1 JPWO2013051516A1 JP2013503897A JP2013503897A JPWO2013051516A1 JP WO2013051516 A1 JPWO2013051516 A1 JP WO2013051516A1 JP 2013503897 A JP2013503897 A JP 2013503897A JP 2013503897 A JP2013503897 A JP 2013503897A JP WO2013051516 A1 JPWO2013051516 A1 JP WO2013051516A1
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Classifications
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1343—Electrodes
- G02F1/13439—Electrodes characterised by their electrical, optical, physical properties; materials therefor; method of making
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
- G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
- G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
- G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
- G06F3/044—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means by capacitive means
- G06F3/0445—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means by capacitive means using two or more layers of sensing electrodes, e.g. using two layers of electrodes separated by a dielectric layer
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/0005—Production of optical devices or components in so far as characterised by the lithographic processes or materials used therefor
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/0047—Photosensitive materials characterised by additives for obtaining a metallic or ceramic pattern, e.g. by firing
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
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- H05K1/03—Use of materials for the substrate
- H05K1/0313—Organic insulating material
- H05K1/0353—Organic insulating material consisting of two or more materials, e.g. two or more polymers, polymer + filler, + reinforcement
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Abstract
Description
上記バインダーポリマーにアセトン30gを加え、これを均一に溶解する。次いで、指示薬であるフェノールフタレインを上記溶液に適量添加して、0.1NのKOH水溶液を用いて滴定することにより測定できる。なお、酸価は次式により算出できる。
酸価=10×Vf×56.1/(Wp×I)
式中、Vfはフェノールフタレインの滴定量(mL)を示し、Wpは測定した樹脂溶液の重量(g)を示し、Iは測定した樹脂溶液中の不揮発分の割合(質量%)を示す。
なお、バインダーポリマーに合成溶媒や希釈溶媒が含まれる場合は、精秤前に予め、上記溶媒の沸点よりも10℃程度高い温度で1〜4時間加熱し、揮発分を除去しておく。この際、低分子量の光重合性化合物等の揮発性成分が除去されることもある。
に沿った部分断面図である。これらは、XY位置座標の透明電極の交差部を示す。図7及び図8に示されるように、透明電極が本発明に係る導電パターンの形成方法により形成されていることにより、段差が小さく平滑性の高いタッチパネルセンサを得ることができる。
(カーボンナノチューブ(CNT)分散液)
純水に、Unidym社のHipco単層カーボンナノチューブの高純度品を0.4質量%、及び、界面活性剤としてドデシルーペンタエチレングリコールを0.1質量%の濃度となるように分散し、カーボンナノチューブ分散液を得た。
[ポリオール法による銀繊維の調製]
2000mLの3口フラスコに、エチレングリコール500mLを入れ、窒素雰囲気下、マグネチックスターラーで攪拌しながらオイルバスにより160℃まで加熱した。ここに、別途用意したPtCl22mgを50mLのエチレングリコールに溶解した溶液を滴下した。4〜5分後、AgNO35gをエチレングリコール300mLに溶解した溶液と、重量平均分子量が4万のポリビニルピロリドン(和光純薬(株)製)5gをエチレングリコール150mLに溶解した溶液とを、それぞれの滴下ロートから1分間で滴下し、その後160℃で60分間攪拌した。
純水に、上記で得られた銀繊維を0.2質量%、及び、ドデシル‐ペンタエチレングリコールを0.1質量%の濃度となるように分散し、銀繊維分散液を得た。
ポリエチレンジオキシチオフェンのアルコール溶液である「セプルジータOC−U1」(信越ポリマー社製、商品名)をメタノールで10倍に希釈し、これを有機導電体溶液とした。
(アクリル樹脂の合成)
撹拌機、還流冷却器、温度計、滴下ロート及び窒素ガス導入管を備えたフラスコに、メチルセロソルブとトルエンとの混合液(メチルセロソルブ/トルエン=3/2(質量比)、以下、「溶液s」という)400gを加え、窒素ガスを吹き込みながら撹拌して、80℃まで加熱した。一方、単量体としてメタクリル酸100g、メタクリル酸メチル250g、アクリル酸エチル100g及びスチレン50gと、アゾビスイソブチロニトリル0.8gとを混合した溶液(以下、「溶液a」という)を用意した。次に、80℃に加熱された溶液sに溶液aを4時間かけて滴下した後、80℃で撹拌しながら2時間保温した。さらに、100gの溶液sにアゾビスイソブチロニトリル1.2gを溶解した溶液を、10分かけてフラスコ内に滴下した。そして、滴下後の溶液を撹拌しながら80℃で3時間保温した後、30分間かけて90℃に加熱した。90℃で2時間保温した後、冷却してバインダーポリマー溶液を得た。このバインダーポリマー溶液に、アセトンを加えて不揮発成分(固形分)が50質量%になるように調製し、(a)成分としてのバインダーポリマー溶液を得た。得られたバインダーポリマーの重量平均分子量は80,000であり、カルボキシル基の比率は20質量%であり、酸価は130mgKOH/gであった。これをアクリルポリマー(a1)とした。同様に、溶液aとして、メタクリル酸、メタクリル酸メチル、アクリル酸エチルを表1に記載の配合量(単位:質量部)で配合し、バインダーポリマー溶液を得た。得られたバインダーポリマーの重量平均分子量は65,000であり、カルボキシル基の比率は12質量%であり、酸価は78mgKOH/gであった。これをアクリルポリマー(a2)とした。これらの結果を表1に示す。
GPC条件
ポンプ:日立 L−6000型((株)日立製作所製、製品名)
カラム:Gelpack GL−R420、Gelpack GL−R430、Gelpack GL−R440(以上、日立化成工業(株)製、製品名)
溶離液:テトラヒドロフラン
測定温度:40℃
流量:2.05mL/分
検出器:日立 L−3300型RI((株)日立製作所製、製品名)
表2に示す材料を同表に示す配合量(単位:質量部)で配合し、感光性樹脂組成物の溶液1〜3を調製した。
(b)成分
PET−30:ペンタエリスリトールトリアクリレート(日本化薬(株)製)
DPHA:ジペンタエリスリトールヘキサアクリレート(日本化薬(株)製)
TMPTA:トリメチロールプロパントリアクリレート(日本化薬(株)製)
(c)成分
IRGACURE OXE 01:1,2−オクタンジオン,1−[(4−フェニルチオ)−,2−(o−ベンゾイルオキシム)](BASF(株)製)
Lucirin TPO:2,4,6−トリメチルベンゾイル−ジフェニル−ホスフィンオキサイド(BASF(株)製)
(製造例1)
上記で得られたカーボンナノチューブ分散液を、支持フィルムである50μm厚のポリエチレンテレフタレートフィルム(PETフィルム、帝人(株)製、商品名「G2−50」、ヘーズ1.2%)上に25g/m2で均一に塗布し、100℃の熱風対流式乾燥機で3分間乾燥し、室温において10kg/cmの線圧で加圧することにより、支持フィルム上に導電膜を形成した。なお、走査型電子顕微鏡写真により測定したところ、導電膜の乾燥後の膜厚は、約0.02μmであった。
上記で得られた銀繊維分散液を、支持フィルムである50μm厚のポリエチレンテレフタレートフィルム(PETフィルム、帝人(株)製、商品名「G2−50」、ヘーズ1.2%)上に25g/m2で均一に塗布し、100℃の熱風対流式乾燥機で10分間乾燥し、室温において10kg/cmの線圧で加圧することにより、支持フィルム上に導電膜を形成した。なお、走査型電子顕微鏡写真により測定したところ、導電膜の乾燥後の膜厚は、約0.01μmであった。
上記で得られた有機導電体溶液を、支持フィルムである50μm厚のポリエチレンテレフタレートフィルム(PETフィルム、帝人(株)製、商品名「G2−50」、ヘーズ1.2%)上に25g/m2で均一に塗布し、100℃の熱風対流式乾燥機で3分間乾燥し、導電膜を形成した。なお、走査型電子顕微鏡写真により測定したところ、導電膜の乾燥後の膜厚は、約0.1μmであった。
表3又は4に記載の感光性樹脂組成物の溶液と導電体との組み合わせで、製造例1と同様にして、感光性導電フィルムE4〜E12を得た。感光性樹脂層の乾燥後の膜厚はいずれも5μmであった。
上記の450〜650nmの波長域における最小光透過率は、分光光度計(日立ハイテクノロジーズ社製、商品名「U−3310」)を用いて測定した。
(実施例1)
0.7mm厚のソーダガラス板を80℃に加温し、その表面上に感光性導電フィルムE1を、保護フィルムを剥離しながら感光性樹脂層を基板に対向させて、120℃、0.4MPaの条件でラミネートした。ラミネート後、基板を冷却し基板の温度が23℃になった時点で、支持フィルムであるPETフィルム面にライン幅/スペース幅が100/100μmで長さが100mmの配線パターンを有するアートワークを密着させた。そして、高圧水銀灯ランプを有する露光機(オーク(株)製、商品名「HMW−201B」)を用い、大気下で、50mJ/cm2の露光量で導電膜及び感光性樹脂層に光照射した(第一の露光工程)。その後、アートワークを除き、さらに支持フィルムであるPETフィルム導電膜を露出するように剥離した。この時点では、0.7mm厚のソーダガラス板上に感光性樹脂層と導電膜とをこの順に備える基板となっている。その後、同露光設備を用い、大気下で、50mJ/cm2の露光量で導電膜及び感光性樹脂層に光照射した(第二の露光工程)。
感光性導電フィルムとしてE2〜E12を用いた以外は、実施例1と同様にしてそれぞれ導電パターンを形成した。実施例2〜12はいずれも導電パターンは視認されにくく、表3に示す段差を有していた。導電パターンの抵抗値についても表3に示す。
0.7mm厚のソーダガラス板を80℃に加温し、その表面上に感光性導電フィルムE1を、保護フィルムを剥離しながら感光性樹脂層を基板に対向させて、120℃、0.4MPaの条件でラミネートした。ラミネート後、基板を冷却し基板の温度が23℃になった時点で、支持フィルムであるPETフィルム面にライン幅/スペース幅が100/100μmで長さが100mmの配線パターンを有するアートワークを密着させた。そして、高圧水銀灯ランプを有する露光機(オーク(株)製、商品名「HMW−201B」)を用い、大気下で、50mJ/cm2の露光量で導電膜及び感光性樹脂層に光照射した。
感光性導電フィルムE2、E3を用いた以外は、比較例1と同様にしてそれぞれ導電パターンを形成した。
実施例並びに比較例で得られた導電パターンを形成したソーダガラス板を、80℃に加温し、その表面上に製造例2で得られた感光性導電フィルムE2を、保護フィルムを剥離しながら感光性樹脂層を基板に対向させて、120℃、0.4MPaの条件でラミネートした。ラミネート後、光学顕微鏡で50倍に拡大し、ラミネートで気泡の捲き込みを確認した。パターン際を観察すると、実施例で作製した導電パターンの段差が少ない基板には気泡は確認されなかったが、比較例の段差がある基板では、いずれもパターン際に気泡が確認された。結果を表3、表4に示す。
導電膜の表面抵抗を以下の手順にしたがって測定した。別途0.7mm厚のソーダガラス板を80℃に加温し、その表面上に感光性導電フィルムを、保護フィルムを剥離しながら感光性樹脂層を基板に対向させて、120℃、0.4MPaの条件でラミネートした。その後、支持フィルムを剥離し、4端子法にて導電膜の表面抵抗を測定した。結果を表3、4に示す。
CNT:単層カーボンナノチューブ(Hipco、Unidym社製)
PEDOT:ポリエチレンジオキシチオフェン(セプルジータOC−U1、信越ポリマー社製)
Claims (10)
- 基板上に設けられた感光性樹脂層と、該感光性樹脂層の前記基板とは反対側の面に設けられた導電膜とを含む感光層に、パターン状に活性光線を照射する第一の露光工程と、
酸素存在下で、前記感光層の少なくとも第一の露光工程での未露光部の一部又は全部に活性光線を照射する第二の露光工程と、
前記第二の露光工程の後に前記感光層を現像することにより、導電パターンを形成する現像工程と、
を備える、導電パターンの形成方法。 - 支持フィルム、該支持フィルム上に設けられた導電膜及び該導電膜上に設けられた感光性樹脂層を有する感光性導電フィルムを、前記基板上に前記感光性樹脂層が接するようにラミネートすることにより前記感光層を設ける、請求項1に記載の導電パターンの形成方法。
- 前記第一の露光工程は、前記支持フィルムを有する前記感光層に前記活性光線を照射する工程であり、
前記第二の露光工程は、前記支持フィルムが除去された前記感光層に前記活性光線を照射する工程である、請求項2に記載の導電パターンの形成方法。 - 前記導電膜は、無機導電体及び有機導電体からなる群より選択される少なくとも一種の導電体を含有する、請求項1〜3のいずれか一項に記載の導電パターンの形成方法。
- 前記導電膜が、導電性繊維を含む、請求項1〜4のいずれか一項に記載の導電パターンの形成方法。
- 前記導電性繊維は、銀繊維である、請求項5に記載の導電パターンの形成方法。
- 前記導電膜は、ポリチオフェン、ポリチオフェン誘導体、ポリアニリン、及び、ポリアニリン誘導体からなる群より選択される少なくとも一種の導電体を含有する、請求項1〜6のいずれか一項に記載の導電パターンの形成方法。
- 前記感光性樹脂層は、バインダーポリマー、エチレン性不飽和結合を有する光重合性化合物及び光重合開始剤を含有する、請求項1〜7のいずれか一項に記載の導電パターンの形成方法。
- 基板と、該基板上に請求項1〜8のいずれか一項に記載の導電パターンの形成方法により形成された導電パターンと、を備える、導電パターン基板。
- 請求項9に記載の導電パターン基板を備える、タッチパネルセンサ。
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WO2013051516A1 (ja) | 2013-04-11 |
KR101932778B1 (ko) | 2018-12-27 |
JP2013156655A (ja) | 2013-08-15 |
KR20130055699A (ko) | 2013-05-28 |
CN103210350B (zh) | 2019-06-18 |
TW201322314A (zh) | 2013-06-01 |
US20140327889A1 (en) | 2014-11-06 |
EP2620814A4 (en) | 2014-01-15 |
IN2014DN03390A (ja) | 2015-06-05 |
CN103210350A (zh) | 2013-07-17 |
US9052587B2 (en) | 2015-06-09 |
KR101348546B1 (ko) | 2014-01-07 |
US20160246394A1 (en) | 2016-08-25 |
US9817499B2 (en) | 2017-11-14 |
US9639189B2 (en) | 2017-05-02 |
US20150271919A1 (en) | 2015-09-24 |
JP5257558B1 (ja) | 2013-08-07 |
EP2620814B1 (en) | 2014-12-10 |
EP2620814A1 (en) | 2013-07-31 |
CN103336409B (zh) | 2015-05-06 |
TWI414007B (zh) | 2013-11-01 |
TWI592994B (zh) | 2017-07-21 |
CN103336409A (zh) | 2013-10-02 |
KR20140058394A (ko) | 2014-05-14 |
TW201403690A (zh) | 2014-01-16 |
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