JPWO2011010702A1 - アンチヒューズ素子 - Google Patents
アンチヒューズ素子 Download PDFInfo
- Publication number
- JPWO2011010702A1 JPWO2011010702A1 JP2011523691A JP2011523691A JPWO2011010702A1 JP WO2011010702 A1 JPWO2011010702 A1 JP WO2011010702A1 JP 2011523691 A JP2011523691 A JP 2011523691A JP 2011523691 A JP2011523691 A JP 2011523691A JP WO2011010702 A1 JPWO2011010702 A1 JP WO2011010702A1
- Authority
- JP
- Japan
- Prior art keywords
- layer
- insulating layer
- electrode
- antifuse element
- electrode layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/525—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body with adaptable interconnections
- H01L23/5252—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body with adaptable interconnections comprising anti-fuses, i.e. connections having their state changed from non-conductive to conductive
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/16—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
- H01L25/167—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits comprising optoelectronic devices, e.g. LED, photodiodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Design And Manufacture Of Integrated Circuits (AREA)
- Fuses (AREA)
- Semiconductor Memories (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
Description
以下の条件で、引出電極がそれぞれ一つの接続部を有しており、接続部の直径が30μmのアンチヒューズ素子を作製した。図6、図7を参照しつつ説明する。なお、図面は分かりやすいように、模式的に記載した。
11:基板
12:酸化物層
13:密着層
21:下部電極層
22:絶縁層
23:上部電極層
24:クラック
25a,25b,26a,26b:玉化部
27;短絡部
28:消失部
29:構造変化部分
30:保護層
31:無機保護層
32:有機保護層
33:有機絶縁層
41,42:引出電極
41a,42a:接続部
41b,42b:平面部
43,44:外部電極
101:アンチヒューズ素子
102:抵抗素子
103:絶縁体
104,105:端子
106,107:低融点導電物
Claims (6)
- 絶縁層と、前記絶縁層の上下面に形成されている一対の電極層と、前記電極層の前記絶縁層と静電容量を形成している部分と接触するように形成されている引出電極と、を備え、
前記絶縁層の絶縁破壊電圧以上の電圧の印加時に、前記一対の電極層が互いに溶融して前記絶縁層を巻き込むような形態で短絡する短絡部と、前記絶縁層が巻き込まれることにより前記電極層と前記絶縁層とが消失する消失部と、を有する構造変化部分が生じるように構成されており、
前記引出電極は前記電極層と接触している部分を少なくとも二以上有する、アンチヒューズ素子。 - 前記接触している部分の間隔が前記構造変化部分の最大径より大きい、請求項1に記載のアンチヒューズ素子。
- 前記絶縁層と前記一対の電極層とを被覆する保護層を備える、請求項1又は2に記載のアンチヒューズ素子。
- 前記引出電極は、前記保護層を貫通して前記電極層と接続されている接続部と、前記保護層上に形成されている平面部と、を有する、請求項3に記載のアンチヒューズ素子。
- 基板と、前記引出電極と電気的に接続されている外部電極と、を備え、前記絶縁層と前記一対の電極層と前記外部電極とは前記基板の一方の主面側に形成されている、請求項1〜4のいずれか1項に記載のアンチヒューズ素子。
- 前記絶縁層の材質が、(Ba,Sr)TiO3であり、前記電極層の材質がAu、Ag、Pt、Pd、Rh、Ir、Ru、Osからなる群より選ばれる少なくとも一種の元素で構成される金属又はその合金である、請求項1〜5のいずれか1項に記載のアンチヒューズ素子。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2011523691A JP5467537B2 (ja) | 2009-07-22 | 2010-07-22 | アンチヒューズ素子 |
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2009171194 | 2009-07-22 | ||
JP2009171194 | 2009-07-22 | ||
JP2011523691A JP5467537B2 (ja) | 2009-07-22 | 2010-07-22 | アンチヒューズ素子 |
PCT/JP2010/062377 WO2011010702A1 (ja) | 2009-07-22 | 2010-07-22 | アンチヒューズ素子 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPWO2011010702A1 true JPWO2011010702A1 (ja) | 2013-01-07 |
JP5467537B2 JP5467537B2 (ja) | 2014-04-09 |
Family
ID=43499174
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2011523691A Expired - Fee Related JP5467537B2 (ja) | 2009-07-22 | 2010-07-22 | アンチヒューズ素子 |
Country Status (4)
Country | Link |
---|---|
US (1) | US8664744B2 (ja) |
JP (1) | JP5467537B2 (ja) |
CN (1) | CN102473675B (ja) |
WO (1) | WO2011010702A1 (ja) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP2453475A4 (en) * | 2009-07-09 | 2016-05-11 | Murata Manufacturing Co | ANTI MELTING ELEMENT |
US9842802B2 (en) * | 2012-06-29 | 2017-12-12 | Qualcomm Incorporated | Integrated circuit device featuring an antifuse and method of making same |
US9502424B2 (en) | 2012-06-29 | 2016-11-22 | Qualcomm Incorporated | Integrated circuit device featuring an antifuse and method of making same |
WO2015148944A1 (en) * | 2014-03-27 | 2015-10-01 | Qualcomm Incorporated | Integrated circuit device featuring an antifuse and method of making same |
WO2017073317A1 (ja) * | 2015-10-27 | 2017-05-04 | 株式会社村田製作所 | 圧電デバイス、及び圧電デバイスの製造方法 |
US10854545B1 (en) * | 2019-09-26 | 2020-12-01 | Nanya Technology Corporation | Anti-fuse structure |
Family Cites Families (39)
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US4823181A (en) * | 1986-05-09 | 1989-04-18 | Actel Corporation | Programmable low impedance anti-fuse element |
US4899205A (en) * | 1986-05-09 | 1990-02-06 | Actel Corporation | Electrically-programmable low-impedance anti-fuse element |
US5134457A (en) * | 1986-05-09 | 1992-07-28 | Actel Corporation | Programmable low-impedance anti-fuse element |
US5266829A (en) * | 1986-05-09 | 1993-11-30 | Actel Corporation | Electrically-programmable low-impedance anti-fuse element |
US5196724A (en) * | 1991-04-26 | 1993-03-23 | Quicklogic Corporation | Programmable interconnect structures and programmable integrated circuits |
US5557136A (en) * | 1991-04-26 | 1996-09-17 | Quicklogic Corporation | Programmable interconnect structures and programmable integrated circuits |
US5451811A (en) * | 1991-10-08 | 1995-09-19 | Aptix Corporation | Electrically programmable interconnect element for integrated circuits |
US5485031A (en) * | 1993-11-22 | 1996-01-16 | Actel Corporation | Antifuse structure suitable for VLSI application |
JP3226726B2 (ja) * | 1994-09-06 | 2001-11-05 | 株式会社東芝 | アンチフューズ素子及びその製造方法 |
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US5759876A (en) * | 1995-11-01 | 1998-06-02 | United Technologies Corporation | Method of making an antifuse structure using a metal cap layer |
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JPH1084044A (ja) * | 1996-09-09 | 1998-03-31 | Matsushita Electron Corp | 半導体装置およびその製造方法 |
JP2879894B2 (ja) * | 1996-10-08 | 1999-04-05 | 川崎製鉄株式会社 | アンチフューズ素子を具備した半導体集積回路装置及びその製造方法 |
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US6081021A (en) * | 1998-01-15 | 2000-06-27 | International Business Machines Corporation | Conductor-insulator-conductor structure |
US6288437B1 (en) * | 1999-02-26 | 2001-09-11 | Micron Technology, Inc. | Antifuse structures methods and applications |
US6774439B2 (en) * | 2000-02-17 | 2004-08-10 | Kabushiki Kaisha Toshiba | Semiconductor device using fuse/anti-fuse system |
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WO2002001641A1 (fr) * | 2000-06-27 | 2002-01-03 | Matsushita Electric Industrial Co., Ltd. | Dispositif semi-conducteur |
US6498056B1 (en) * | 2000-10-31 | 2002-12-24 | International Business Machines Corporation | Apparatus and method for antifuse with electrostatic assist |
US6707063B2 (en) * | 2001-03-22 | 2004-03-16 | Hewlett-Packard Development Company, L.P. | Passivation layer for molecular electronic device fabrication |
JP3829088B2 (ja) * | 2001-03-29 | 2006-10-04 | 株式会社東芝 | 半導体記憶装置 |
JP2003068854A (ja) * | 2001-08-23 | 2003-03-07 | Seiko Epson Corp | 配線間接続方法、配線間接続部材及びその製造方法 |
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-
2010
- 2010-07-22 WO PCT/JP2010/062377 patent/WO2011010702A1/ja active Application Filing
- 2010-07-22 CN CN201080031298.2A patent/CN102473675B/zh not_active Expired - Fee Related
- 2010-07-22 JP JP2011523691A patent/JP5467537B2/ja not_active Expired - Fee Related
-
2012
- 2012-01-20 US US13/354,637 patent/US8664744B2/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
US20120112313A1 (en) | 2012-05-10 |
US8664744B2 (en) | 2014-03-04 |
WO2011010702A1 (ja) | 2011-01-27 |
CN102473675A (zh) | 2012-05-23 |
CN102473675B (zh) | 2015-08-26 |
JP5467537B2 (ja) | 2014-04-09 |
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