JPWO2010050021A1 - 化合物半導体装置及びその製造方法 - Google Patents
化合物半導体装置及びその製造方法 Download PDFInfo
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- 150000001875 compounds Chemical class 0.000 title claims description 116
- 239000004065 semiconductor Substances 0.000 title claims description 115
- 238000004519 manufacturing process Methods 0.000 title claims description 36
- 229910002704 AlGaN Inorganic materials 0.000 claims abstract description 27
- 239000000758 substrate Substances 0.000 claims description 33
- 238000000034 method Methods 0.000 claims description 22
- 239000010410 layer Substances 0.000 description 248
- 239000007789 gas Substances 0.000 description 28
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 21
- 229910052814 silicon oxide Inorganic materials 0.000 description 19
- 229910052581 Si3N4 Inorganic materials 0.000 description 11
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 11
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 10
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 7
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 6
- 238000010586 diagram Methods 0.000 description 6
- IBEFSUTVZWZJEL-UHFFFAOYSA-N trimethylindium Chemical compound C[In](C)C IBEFSUTVZWZJEL-UHFFFAOYSA-N 0.000 description 6
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 5
- 239000013078 crystal Substances 0.000 description 5
- 238000009826 distribution Methods 0.000 description 5
- 238000005530 etching Methods 0.000 description 5
- 238000002955 isolation Methods 0.000 description 5
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 description 5
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 229910021529 ammonia Inorganic materials 0.000 description 3
- 230000000903 blocking effect Effects 0.000 description 3
- 238000001784 detoxification Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000012535 impurity Substances 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 230000005533 two-dimensional electron gas Effects 0.000 description 3
- 238000011144 upstream manufacturing Methods 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 229910000041 hydrogen chloride Inorganic materials 0.000 description 2
- IXCSERBJSXMMFS-UHFFFAOYSA-N hydrogen chloride Substances Cl.Cl IXCSERBJSXMMFS-UHFFFAOYSA-N 0.000 description 2
- 239000011241 protective layer Substances 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- 229910052594 sapphire Inorganic materials 0.000 description 2
- 239000010980 sapphire Substances 0.000 description 2
- KZBUYRJDOAKODT-UHFFFAOYSA-N Chlorine Chemical compound ClCl KZBUYRJDOAKODT-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- XOYLJNJLGBYDTH-UHFFFAOYSA-M chlorogallium Chemical group [Ga]Cl XOYLJNJLGBYDTH-UHFFFAOYSA-M 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 239000011777 magnesium Substances 0.000 description 1
- QBJCZLXULXFYCK-UHFFFAOYSA-N magnesium;cyclopenta-1,3-diene Chemical compound [Mg+2].C1C=CC=[C-]1.C1C=CC=[C-]1 QBJCZLXULXFYCK-UHFFFAOYSA-N 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 239000012071 phase Substances 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 230000001846 repelling effect Effects 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 125000006850 spacer group Chemical group 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- -1 thickness Substances 0.000 description 1
- 238000000927 vapour-phase epitaxy Methods 0.000 description 1
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Abstract
Description
先ず、第1の実施形態について説明する。図1は、第1の実施形態に係るGaN系HEMTの構造を示す断面図である。
phase epitaxy)法によりAlN層2を形成する。
圧力:常圧、
HClガスの流量:100ccm(100cm3/min)、
NH3ガスの流量:10lm(10リットル/min)、
温度:1100℃。
deposition)法によりn型GaN層3を形成する。
トリメチルガリウム(TMG)の流量:0〜50sccm、
トリメチルアルミニウム(TMA)の流量:0〜50sccm、
トリメチルインジウム(TMI)の流量:0〜50sccm、
アンモニア(NH3)の流量:20slm、
n型不純物:シラン(SiH4)、
圧力:100Torr、
温度:1100℃。
トリメチルガリウム(TMG)の流量:0〜50sccm、
トリメチルアルミニウム(TMA)の流量:0〜50sccm、
トリメチルインジウム(TMI)の流量:0〜50sccm、
アンモニア(NH3)の流量:20slm、
p型不純物:ビスシクロペンタディエニルマグネシウム(Cp2Mg)、
圧力:100Torr、
温度:1100℃。
次に、第2の実施形態について説明する。図8は、第2の実施形態に係るGaN系HEMTの構造を示す断面図である。
次に、第3の実施形態について説明する。図9は、第3の実施形態に係るGaN系HEMTの構造を示す断面図である。
次に、第4の実施形態について説明する。図10は、第4の実施形態に係るGaN系HEMTの構造を示す断面図である。
次に、第5の実施形態について説明する。図11は、第5の実施形態に係るGaN系HEMTの構造を示す断面図である。
以下、本発明の諸態様を付記としてまとめて記載する。
(付記1)
第1の導電型の第1の化合物半導体層と、
前記第1の化合物半導体層の上方に形成された電子走行層と、
前記電子走行層の上方に形成された電子供給層と、
前記電子供給層の上方に形成されたゲート電極及びソース電極と、
前記第1の化合物半導体層の下方に形成されたドレイン電極と、
前記電子走行層と前記ドレイン電極との間に形成された前記第1の導電型と異なる第2の導電型の第2の化合物半導体層と、
前記第2の化合物半導体層の電位を制御する制御手段と、
を有することを特徴とする化合物半導体装置。
(付記2)
前記電子走行層と前記ドレイン電極との間に形成され、開口部を備えた電流狭窄層を有することを特徴とする付記1に記載の化合物半導体装置。
(付記3)
前記電子走行層と前記第2の化合物半導体層との間に形成された前記第1の導電型の第3の化合物半導体層を有することを特徴とする付記1に記載の化合物半導体装置。
(付記4)
前記開口部内に形成された前記第1の導電型の第3の化合物半導体層を有することを特徴とする付記2に記載の化合物半導体装置。
(付記5)
前記第2の化合物半導体層は、前記第1の化合物半導体層と前記電子走行層との間に位置していることを特徴とする付記1に記載の化合物半導体装置。
(付記6)
前記第2の化合物半導体層は、前記第1の化合物半導体層と前記電流狭窄層との間に位置していることを特徴とする付記2に記載の化合物半導体装置。
(付記7)
前記第2の化合物半導体層は、前記電流狭窄層と前記電子走行層との間に位置していることを特徴とする付記2に記載の化合物半導体装置。
(付記8)
前記電流狭窄層は、AlN層であり、
前記電子走行層は、n型GaN層であり、
前記電流狭窄層と前記電子走行層との間に形成されたn型AlGaN層を有することを特徴とする付記2に記載の化合物半導体装置。
(付記9)
前記第1の化合物半導体層と前記ドレイン電極との間に位置する導電性基板を有することを特徴とする付記1に記載の化合物半導体装置。
(付記10)
前記第2の化合物半導体層の厚さは、1nm乃至1μmであることを特徴とする付記1に記載の化合物半導体装置。
(付記11)
第1の導電型の第1の化合物半導体層上方に、前記第1の導電型と異なる第2の導電型の第2の化合物半導体層を形成する工程と、
前記第2の化合物半導体層の上方に電子走行層を形成する工程と、
前記電子走行層上に電子供給層を形成する工程と、
前記電子供給層の上方にゲート電極及びソース電極を形成する工程と、
前記第1の化合物半導体層の下方にドレイン電極を形成する工程と、
前記第2の化合物半導体層の電位を制御する制御手段を形成する工程と、
を有することを特徴とする化合物半導体装置の製造方法。
(付記12)
前記電子走行層を形成する工程の前に、開口部を備えた電流狭窄層を前記第1の化合物半導体層の上方に形成する工程を有することを特徴とする付記11に記載の化合物半導体装置の製造方法。
(付記13)
前記第2の化合物半導体層を形成する工程と前記電子走行層を形成する工程との間に、前記第2の化合物半導体層の上方に前記第1の導電型の第3の化合物半導体層を形成する工程を有することを特徴とする付記11に記載の化合物半導体装置の製造方法。
(付記14)
前記開口部内に、前記第1の導電型の第3の化合物半導体層を形成する工程を有することを特徴とする付記12に記載の化合物半導体装置の製造方法。
(付記15)
前記電流狭窄層を形成する工程を、前記第2の化合物半導体層を形成する工程と前記電子走行層を形成する工程との間に行うことを特徴とする付記12に記載の化合物半導体装置の製造方法。
(付記16)
前記電流狭窄層を形成する工程を、前記第2の化合物半導体層を形成する工程の前に行うことを特徴とする付記12に記載の化合物半導体装置の製造方法。
(付記17)
前記電流狭窄層として、AlN層を形成し、
前記電子走行層として、n型GaN層を形成し、
前記電流狭窄層を形成する工程と前記電子走行層を形成する工程との間に、前記電流狭窄層上にn型AlGaN層を形成する工程を有することを特徴とする付記12に記載の化合物半導体装置の製造方法。
(付記18)
前記第2の化合物半導体層の厚さを1nm乃至1μmとすることを特徴とする付記11に記載の化合物半導体装置の製造方法。
Claims (18)
- 第1の導電型の第1の化合物半導体層と、
前記第1の化合物半導体層の上方に形成された電子走行層と、
前記電子走行層の上方に形成された電子供給層と、
前記電子供給層の上方に形成されたゲート電極及びソース電極と、
前記第1の化合物半導体層の下方に形成されたドレイン電極と、
前記電子走行層と前記ドレイン電極との間に形成された前記第1の導電型と異なる第2の導電型の第2の化合物半導体層と、
前記第2の化合物半導体層の電位を制御する制御手段と、
を有することを特徴とする化合物半導体装置。 - 前記電子走行層と前記ドレイン電極との間に形成され、開口部を備えた電流狭窄層を有することを特徴とする請求項1に記載の化合物半導体装置。
- 前記電子走行層と前記第2の化合物半導体層との間に形成された前記第1の導電型の第3の化合物半導体層を有することを特徴とする請求項1に記載の化合物半導体装置。
- 前記開口部内に形成された前記第1の導電型の第3の化合物半導体層を有することを特徴とする請求項2に記載の化合物半導体装置。
- 前記第2の化合物半導体層は、前記第1の化合物半導体層と前記電子走行層との間に位置していることを特徴とする請求項1に記載の化合物半導体装置。
- 前記第2の化合物半導体層は、前記第1の化合物半導体層と前記電流狭窄層との間に位置していることを特徴とする請求項2に記載の化合物半導体装置。
- 前記第2の化合物半導体層は、前記電流狭窄層と前記電子走行層との間に位置していることを特徴とする請求項2に記載の化合物半導体装置。
- 前記電流狭窄層は、AlN層であり、
前記電子走行層は、n型GaN層であり、
前記電流狭窄層と前記電子走行層との間に形成されたn型AlGaN層を有することを特徴とする請求項2に記載の化合物半導体装置。 - 前記第1の化合物半導体層と前記ドレイン電極との間に位置する導電性基板を有することを特徴とする請求項1に記載の化合物半導体装置。
- 前記第2の化合物半導体層の厚さは、1nm乃至1μmであることを特徴とする請求項1に記載の化合物半導体装置。
- 第1の導電型の第1の化合物半導体層上方に、前記第1の導電型と異なる第2の導電型の第2の化合物半導体層を形成する工程と、
前記第2の化合物半導体層の上方に電子走行層を形成する工程と、
前記電子走行層上に電子供給層を形成する工程と、
前記電子供給層の上方にゲート電極及びソース電極を形成する工程と、
前記第1の化合物半導体層の下方にドレイン電極を形成する工程と、
前記第2の化合物半導体層の電位を制御する制御手段を形成する工程と、
を有することを特徴とする化合物半導体装置の製造方法。 - 前記電子走行層を形成する工程の前に、開口部を備えた電流狭窄層を前記第1の化合物半導体層の上方に形成する工程を有することを特徴とする請求項11に記載の化合物半導体装置の製造方法。
- 前記第2の化合物半導体層を形成する工程と前記電子走行層を形成する工程との間に、前記第2の化合物半導体層の上方に前記第1の導電型の第3の化合物半導体層を形成する工程を有することを特徴とする請求項11に記載の化合物半導体装置の製造方法。
- 前記開口部内に、前記第1の導電型の第3の化合物半導体層を形成する工程を有することを特徴とする請求項12に記載の化合物半導体装置の製造方法。
- 前記電流狭窄層を形成する工程を、前記第2の化合物半導体層を形成する工程と前記電子走行層を形成する工程との間に行うことを特徴とする請求項12に記載の化合物半導体装置の製造方法。
- 前記電流狭窄層を形成する工程を、前記第2の化合物半導体層を形成する工程の前に行うことを特徴とする請求項12に記載の化合物半導体装置の製造方法。
- 前記電流狭窄層として、AlN層を形成し、
前記電子走行層として、n型GaN層を形成し、
前記電流狭窄層を形成する工程と前記電子走行層を形成する工程との間に、前記電流狭窄層上にn型AlGaN層を形成する工程を有することを特徴とする請求項12に記載の化合物半導体装置の製造方法。 - 前記第2の化合物半導体層の厚さを1nm乃至1μmとすることを特徴とする請求項11に記載の化合物半導体装置の製造方法。
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