JPWO2010013746A1 - 堆積膜形成装置および堆積膜形成方法 - Google Patents
堆積膜形成装置および堆積膜形成方法 Download PDFInfo
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- 238000000034 method Methods 0.000 title claims description 24
- 238000000354 decomposition reaction Methods 0.000 claims abstract description 36
- 239000007789 gas Substances 0.000 claims description 239
- 238000010438 heat treatment Methods 0.000 claims description 32
- 239000000463 material Substances 0.000 claims description 26
- 239000003054 catalyst Substances 0.000 claims description 25
- 239000000758 substrate Substances 0.000 claims description 21
- 230000003213 activating effect Effects 0.000 claims description 9
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 6
- 230000007423 decrease Effects 0.000 claims description 5
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 claims 2
- 239000010408 film Substances 0.000 description 157
- 229910021424 microcrystalline silicon Inorganic materials 0.000 description 28
- 229910021417 amorphous silicon Inorganic materials 0.000 description 24
- 238000005755 formation reaction Methods 0.000 description 20
- 239000010409 thin film Substances 0.000 description 18
- 238000006243 chemical reaction Methods 0.000 description 17
- 230000015572 biosynthetic process Effects 0.000 description 16
- 238000011144 upstream manufacturing Methods 0.000 description 11
- 238000010248 power generation Methods 0.000 description 10
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 9
- 229910000077 silane Inorganic materials 0.000 description 9
- 239000004065 semiconductor Substances 0.000 description 8
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 7
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 7
- 239000007769 metal material Substances 0.000 description 6
- 230000008569 process Effects 0.000 description 6
- 239000002994 raw material Substances 0.000 description 6
- YZCKVEUIGOORGS-UHFFFAOYSA-N Hydrogen atom Chemical compound [H] YZCKVEUIGOORGS-UHFFFAOYSA-N 0.000 description 4
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 4
- 238000002425 crystallisation Methods 0.000 description 4
- 230000008025 crystallization Effects 0.000 description 4
- 239000011521 glass Substances 0.000 description 4
- 229910010271 silicon carbide Inorganic materials 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 230000004913 activation Effects 0.000 description 2
- 230000002411 adverse Effects 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 230000003247 decreasing effect Effects 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 238000006713 insertion reaction Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- ZOCHARZZJNPSEU-UHFFFAOYSA-N diboron Chemical compound B#B ZOCHARZZJNPSEU-UHFFFAOYSA-N 0.000 description 1
- BUMGIEFFCMBQDG-UHFFFAOYSA-N dichlorosilicon Chemical compound Cl[Si]Cl BUMGIEFFCMBQDG-UHFFFAOYSA-N 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- PZPGRFITIJYNEJ-UHFFFAOYSA-N disilane Chemical compound [SiH3][SiH3] PZPGRFITIJYNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000010494 dissociation reaction Methods 0.000 description 1
- 230000005593 dissociations Effects 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 229910052741 iridium Inorganic materials 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- 229910052762 osmium Inorganic materials 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 229910052702 rhenium Inorganic materials 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- ABTOQLMXBSRXSM-UHFFFAOYSA-N silicon tetrafluoride Chemical compound F[Si](F)(F)F ABTOQLMXBSRXSM-UHFFFAOYSA-N 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- 230000007723 transport mechanism Effects 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 229910052720 vanadium Inorganic materials 0.000 description 1
- 230000000007 visual effect Effects 0.000 description 1
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Abstract
Description
チャンバーと、
前記チャンバー内に位置する第1電極と、
前記チャンバー内に前記第1電極と所定間隔を隔てて位置し、第1原料ガスを供給し且つホローカソード放電を発生させる第1供給部と、前記第1原料ガスより分解速度が大きい第2原料ガスを供給する第2供給部とを備えた、第2電極と、
を有する。
前記第1電極と前記第2電極との間に前記基材を配置する工程と、
前記第1供給部の内部に位置する第1空間でホローカソード放電を発生させる工程と、
第1原料ガスを前記第1空間へ供給する工程と、
前記第1原料ガスを前記第1空間で活性化させる工程と、
活性化された前記第1原料ガスを前記第1空間から前記基材側へ供給する工程と、
前記第1電極と前記第2電極との間に位置する第2空間でグロー放電を発生させる工程と、
前記第1原料ガスより分解速度が大きい第2原料ガスを前記第2供給部から前記基材側へ供給する工程と、
前記第2原料ガスを前記第2空間で活性化させる工程と、
を有する。
図1(a),(b)に示すように、本発明の一形態に係る第1実施形態の堆積膜形成装置は、チャンバー1と、チャンバー1内に位置する第1電極6と、チャンバー1内に第1電極6と所定間隔を隔てて位置し、第1原料ガスを供給し且つホローカソード放電を発生させる第1供給部4aと、第1原料ガスより分解速度が大きい第2原料ガスを供給する第2供給部4bとを備えた、シャワー電極として機能する第2電極2と、を有する。また、堆積膜が形成される基材10が第1電極6と第2電極2との間に配置されている。なお、基材10は、第1電極6と第2電極2との間に位置させるようにすればよく、図示されているように第1電極6で支持しなくともよい。
第1実施形態の堆積膜の形成方法は、第1電極6と、第1電極6と所定間隔を隔てて位置し且つ第1供給部4aおよび第2供給部4bを有する第2電極2と、基材10と、を準備する工程と、第1電極6と第2電極2との間に基材10を配置する工程と、第1供給部4aの内部に位置する第1空間8でホローカソード放電を発生させる工程と、第1原料ガスを第1空間8へ供給する工程と、第1原料ガスを第1空間8で活性化させる工程と、活性化された第1原料ガスを第1空間8から基材10側へ供給する工程と、第1電極6と第2電極2との間に位置する第2空間9でグロー放電を発生させる工程と、第1原料ガスより分解速度が大きい第2原料ガスを第2供給部4bから基材10側へ供給する工程と、第2原料ガスを第2空間9で活性化させる工程と、を有する。このような工程によって活性化された第1原料ガスと第2原料ガスとは、第2空間9で混ざり、原料ガス中の成分が基材10上に堆積することで、堆積膜が基材10上に形成される。
Q=C・△P (1)
1/C=1/C1+1/C2+1/C3+1/C4 (2)
ここで、第1孔4cの上流側圧力をP1(Pa)、下流側圧力をP2(Pa)、第2孔4dの上流側圧力をP3(Pa)、下流側圧力P4(Pa)、第1孔4c、第2孔4dの直径をD1、D2(m)、第1孔4c、第2孔4dの開口面積をA1、A2(m2)、第1孔4c、第2孔4dの長さをL1、L2(m)とする。以下に、第2供給部4bの上流側圧力Pinを算出するための関係式について説明する。
Q=(Q1+Q2)/n (3)
ただし、
d=Q2/(Q1+Q2) (4)
M=(1−d)M1+dM2 (5)
V=(1−d)V1+dV2 (6)
C4=π・D2 4/(128・V・L2)・(P3+P4)/2 (7)
ただし、
Q=C4・(P3−P4) (8)
C3=A1・A2/(A1−A2)・v/4 (9)
ただし、
v=(8RT/πM)1/2 (10)
Q=C3・(P2−P3) (11)
なお、v(m/s)は気体分子の平均速さであり、T(K)は温度、R(J/K/mol)は気体定数である。
C2=π・D1 4/(128・V・L1)・(P1+P2)/2 (12)
ただし、
Q=C2・(P1−P2) (13)
よって(3)、(4)、(6)、(12)および(13)式と、第1孔の下流側圧力P2とにより、第1孔4cの上流側圧力P1を算出することができる。
C1=A1・v/4 (14)
ただし、
Q=C1・(Pin−P1) (15)
よって、(3)、(4)、(5)、(10)、(14)および(15)式と、第1孔4cの上流側圧力P1と、温度Tとにより第2供給部の上流側圧力Pinを算出することができる。
1) SiH4+SiH2→Si2H6
2) Si2H6+SiH2→Si3H8
・・・ 以下、同様なSiH2挿入反応が続く・・・
といったSiH2挿入反応によって高分子ガスが生成していく反応である。SiH2はSiH4がプラズマ中の電子と衝突することで製膜主成分となるSiH3とともに生成される。SiH2は特に製膜速度を上げるためにプラズマ電力を高めるほどより多く生成するようになり、その結果、高次シラン分子もより多く生成されるようになる。以上によって生じた高次シラン分子は、製膜表面に付着すると製膜表面での堆積反応(膜成長反応)を乱して膜質を悪化させ、また膜中に取り込まれることでも膜構造を乱して膜質を悪化させる。
2 :第2電極
4 :供給部
4a :第1供給部
4b :第2供給部
6 :第1電極
8 :第1空間
9 :第2空間
10 :基材
Claims (15)
- チャンバーと、
前記チャンバー内に位置する第1電極と、
前記チャンバー内に前記第1電極と所定間隔を隔てて位置し、第1原料ガスを供給し且つホローカソード放電を発生させる第1供給部と、前記第1原料ガスより分解速度が大きい第2原料ガスを供給する第2供給部とを備えた、第2電極と、
を有する堆積膜形成装置。 - 前記第2供給部は、ホローカソード放電を発生させないか、または前記第1供給部よりホローカソード放電の発生の程度が小さい、請求項1に記載の堆積膜形成装置。
- 前記第1供給部は、前記ホローカソード放電を発生させるホロー部を有する、請求項1または2に記載の堆積膜形成装置。
- 前記第1供給部の前記ホロー部は、前記第1電極から遠ざかるにつれて断面積が小さくなる、請求項3に記載の堆積膜形成装置。
- 前記第2電極は、複数の前記第1供給部を有し、
隣接する2つの前記第1供給部同士間の距離は、前記第2電極と前記第1電極−前記第2電極間に位置する基材との距離より短い、請求項1〜4のいずれかに記載の堆積膜形成装置。 - 前記第1原料ガスが非Si系ガスを含み、前記第2原料ガスがSi系ガスを含む、請求項1〜5のいずれかに記載の堆積膜形成装置。
- 前記非Si系ガスが水素ガスを含む、請求項6に記載の堆積膜形成装置。
- 前記非Si系ガスはメタンガスをさらに含む、請求項7に記載の堆積膜形成装置。
- 前記第1供給部へ第1原料ガスを導入する導入経路中に加熱触媒体を有する、請求項1〜8のいずれかに記載の堆積膜形成装置。
- 第1電極と、前記第1電極と所定間隔を隔てて位置し且つ第1供給部および第2供給部を有する第2電極と、基材と、を準備する工程と、
前記第1電極と前記第2電極との間に前記基材を配置する工程と、
前記第1供給部の内部に位置する第1空間でホローカソード放電を発生させる工程と、
第1原料ガスを前記第1空間へ供給する工程と、
前記第1原料ガスを前記第1空間で活性化させる工程と、
活性化された前記第1原料ガスを前記第1空間から前記基材側へ供給する工程と、
前記第1電極と前記第2電極との間に位置する第2空間でグロー放電を発生させる工程と、
前記第1原料ガスより分解速度が大きい第2原料ガスを前記第2供給部から前記基材側へ供給する工程と、
前記第2原料ガスを前記第2空間で活性化させる工程と、
を有する堆積膜形成方法。 - 前記第2原料ガスと活性化された前記第1原料ガスとを前記第2空間で混合する工程、をさらに有する、請求項10に記載の堆積膜形成方法。
- 前記第2原料ガスを前記第2供給部のみから供給する、請求項10または11に記載の堆積膜形成方法。
- 前記第1原料ガスを前記第1供給部のみから供給する、請求項10〜12のいずれかに記載の堆積膜形成方法。
- 前記第1原料ガスを前記第2空間で活性化させる工程、をさらに有する、請求項10〜13のいずれかに記載の堆積膜形成方法。
- 前記第1供給部へ前記第1原料ガスを導入する導入経路中に加熱触媒体を準備する工程と、
前記加熱触媒体を加熱する工程と、
前記加熱触媒体により前記第1原料ガスを活性化する工程と、をさらに有する、請求項10〜14のいずれかに記載の堆積膜形成方法。
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