JPWO2008062685A1 - 光電変換装置用透明導電膜付基板、及びその製造方法、並びにそれを用いた光電変換装置 - Google Patents
光電変換装置用透明導電膜付基板、及びその製造方法、並びにそれを用いた光電変換装置 Download PDFInfo
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- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
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Abstract
Description
11 透光性絶縁基板
12 透明電極層
121 第1透明導電膜
122 第2透明導電膜
2 光電変換ユニット
21 一導電型層
22 真性光電変換層
23 逆導電型層
3 裏面電極層
31 導電性酸化物層
32 金属層
4 光電変換装置
6 集積型光電変換装置
61 光電変換装置セル
62 透明電極層分離溝
63 接続溝
64 裏面電極層分離溝
実施例1として図2に示されるような光電変換装置用透明導電膜付基板1を作製した。
実施例2においても、実施例1と同様に光電変換装置用透明導電膜付基板1を作製した。ただし、実施例1と異なるのは、第1透明導電膜121の厚みを20nmとした点である。この条件で得られた光電変換装置用透明導電膜付基板1は、シート抵抗が12Ω/□程度、ヘイズ率は22%であった。また、得られた光電変換装置用透明導電膜付基板1の全光線透過率をガラス側から光を入射し、分光光度計にて測定した。波長400〜1200nmの範囲で80%以上の透過率を示した。
実施例3においても、実施例1と同様に光電変換装置用透明導電膜付基板1を作製した。ただし、実施例1と異なるのは、第1透明導電膜121の厚みを30nmとした点である。この条件で得られた光電変換装置用透明導電膜付基板1は、シート抵抗が10Ω/□程度、ヘイズ率は26%であった。また、得られた光電変換装置用透明導電膜付基板1の全光線透過率をガラス側から光を入射し、分光光度計にて測定した。波長400〜1200nmの範囲で80%以上の透過率を示した。
実施例4においても、実施例1と同様に光電変換装置用透明導電膜付基板1を作製した。ただし、実施例1と異なるのは、第1透明導電膜121の厚みを50nmとした点である。この条件で得られた光電変換装置用透明導電膜付基板1は、シート抵抗が8Ω/□程度、ヘイズ率は33%であった。また、得られた光電変換装置用透明導電膜付基板1の全光線透過率をガラス側から光を入射し、分光光度計にて測定した。波長400〜1200nmの範囲で80%以上の透過率を示した。
実施例5においても、実施例1と同様に光電変換装置用透明導電膜付基板1を作製した。ただし、実施例1と異なるのは、第1透明導電膜121の厚みを100nmとした点である。この条件で得られた光電変換装置用透明導電膜付基板1は、シート抵抗が5Ω/□程度、ヘイズ率は38%であった。また、得られた光電変換装置用透明導電膜付基板1の全光線透過率をガラス側から光を入射し、分光光度計にて測定した。波長400〜1200nmの範囲で80%以上の透過率を示した。
比較例1は実施例1とほぼ同様に光電変換装置用透明導電膜付基板1を作製した。ただし、実施例1と異なるのは、第1透明導電膜121を形成せず、透光性絶縁基板11の上に直接ZnOからなる第2透明導電膜122を形成した点である。この条件で得られた光電変換装置用透明導電膜付基板1は、シート抵抗が18Ω/□程度、ヘイズ率は11%であった。また、得られた光電変換装置用透明導電膜付基板1の全光線透過率をガラス側から光を入射し、分光光度計にて測定した。波長400〜1200nmの範囲で80%以上の透過率を示した。
実施例6として、図3および図4に示されるような集積型光電変換装置6を作製した。
比較例2は実施例6とほぼ同様に集積型光電変換装置6を作製した。ただし、実施例6と異なるのは、光電変換装置用透明導電膜付基板1として比較例1で作製したものを使用した点である。この条件で得られたシリコン系集積型光電変換装置にAM1.5の光を100mW/cm2の光量で照射して出力特性を測定したところ、開放電圧(Voc)が0.500V、短絡電流密度(Jsc)が23.1mA/cm2、曲線因子(F.F.)が0.698、そして変換効率が8.1%であった。
比較例3は実施例6とほぼ同様に集積型光電変換装置6を作製した。ただし、実施例6と異なるのは、光電変換装置用透明導電膜付基板1として比較例1と同様の構成で作製し、かつ第2透明導電膜122として、低圧CVD法によりBドープZnOを1.6μmの厚みで形成したものを使用した点である。この条件で得られた光電変換装置用透明導電膜付基板1は、シート抵抗が10Ω/□程度、ヘイズ率は23%であった。また、得られた光電変換装置用透明導電膜付基板1の全光線透過率をガラス側から光を入射し、分光光度計にて測定した。波長400〜1200nmの範囲で80%以上の透過率を示したが、実施例6で使用した光電変換装置用透明導電膜付基板と比較して、全波長領域において透過率の低いものであった。この光電変換装置用透明導電膜付基板を用いて得られたシリコン系集積型光電変換装置にAM1.5の光を100mW/cm2の光量で照射して出力特性を測定したところ、開放電圧(Voc)が0.511V、短絡電流密度(Jsc)が25.7mA/cm2、曲線因子(F.F.)が0.721、そして変換効率が9.5%であった。
Claims (5)
- 透光性絶縁基板、及び該透光性絶縁基板上に堆積された少なくとも酸化亜鉛を含む透明電極層からなる光電変換装置用透明導電膜付基板であって、前記透明電極層は基板側から第1および第2の透明導電膜を堆積した2層構造からなり、前記第1透明導電膜は平均膜厚が10〜500nmであり、前記第2透明導電膜は平均膜厚が300〜1500nmであり、前記第1透明導電膜の平均膜厚よりも前記第2透明導電膜の平均膜厚のほうが大きく、前記第2透明導電膜の表面の凹凸の平均高低差が10〜300nmであり、表面の凹凸の平均高低差が第1透明導電膜のそれよりも大きいことを特徴とする光電変換装置用透明導電膜付基板。
- 請求項1に記載の光電変換装置用透明導電膜付基板であって、C光源もしくはD65光源を用いて測定した拡散透過率と全透過率の比であるヘイズ率が20%以上であることを特徴とする光電変換装置用透明導電膜付基板。
- 請求項1または請求項2のいずれかに記載の光電変換装置用透明導電膜付基板の製造方法であって、前記第1透明導電膜をスパッタ法によって形成する工程と、第2透明導電膜を低圧CVD法によって形成する工程とを少なくとも有することを特徴とする光電変換装置用透明導電膜付基板の製造方法。
- 請求項1または請求項2のいずれかに記載の光電変換装置用透明導電膜付基板を備えた光電変換装置。
- 請求項1または請求項2のいずれかに記載の光電変換装置用透明導電膜付基板を備え、また前記透明電極層の上に堆積された少なくとも一つの結晶質光電変換ユニット、及び裏面電極層を含み、さらにこれらの層が複数の光電変換セルを形成するように複数の分離溝によって分離されており、かつ、それらの複数の光電変換セルが複数の接続溝を介して互いに電気的に直列接続されていることを特徴とする集積型光電変換装置。
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