JPWO2007148657A1 - 弁体部及びゲートバルブ装置 - Google Patents
弁体部及びゲートバルブ装置 Download PDFInfo
- Publication number
- JPWO2007148657A1 JPWO2007148657A1 JP2008522453A JP2008522453A JPWO2007148657A1 JP WO2007148657 A1 JPWO2007148657 A1 JP WO2007148657A1 JP 2008522453 A JP2008522453 A JP 2008522453A JP 2008522453 A JP2008522453 A JP 2008522453A JP WO2007148657 A1 JPWO2007148657 A1 JP WO2007148657A1
- Authority
- JP
- Japan
- Prior art keywords
- valve body
- opening
- body portion
- valve
- seal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000004519 manufacturing process Methods 0.000 abstract description 8
- 238000012423 maintenance Methods 0.000 description 78
- 238000012545 processing Methods 0.000 description 28
- 235000012431 wafers Nutrition 0.000 description 17
- 229910052751 metal Inorganic materials 0.000 description 15
- 239000002184 metal Substances 0.000 description 15
- 238000012546 transfer Methods 0.000 description 11
- 239000002245 particle Substances 0.000 description 10
- 238000000034 method Methods 0.000 description 8
- 239000007795 chemical reaction product Substances 0.000 description 7
- 238000003780 insertion Methods 0.000 description 7
- 230000037431 insertion Effects 0.000 description 7
- 239000004065 semiconductor Substances 0.000 description 7
- 238000007789 sealing Methods 0.000 description 6
- 239000000428 dust Substances 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 230000008878 coupling Effects 0.000 description 3
- 238000010168 coupling process Methods 0.000 description 3
- 238000005859 coupling reaction Methods 0.000 description 3
- 238000005192 partition Methods 0.000 description 3
- 239000012495 reaction gas Substances 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 239000000470 constituent Substances 0.000 description 2
- 229920001343 polytetrafluoroethylene Polymers 0.000 description 2
- 239000004810 polytetrafluoroethylene Substances 0.000 description 2
- 239000000843 powder Substances 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 239000004925 Acrylic resin Substances 0.000 description 1
- 229920000178 Acrylic resin Polymers 0.000 description 1
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 230000003139 buffering effect Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000006835 compression Effects 0.000 description 1
- 238000007906 compression Methods 0.000 description 1
- 230000008602 contraction Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- -1 polytetrafluoroethylene Polymers 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F16—ENGINEERING ELEMENTS AND UNITS; GENERAL MEASURES FOR PRODUCING AND MAINTAINING EFFECTIVE FUNCTIONING OF MACHINES OR INSTALLATIONS; THERMAL INSULATION IN GENERAL
- F16K—VALVES; TAPS; COCKS; ACTUATING-FLOATS; DEVICES FOR VENTING OR AERATING
- F16K1/00—Lift valves or globe valves, i.e. cut-off apparatus with closure members having at least a component of their opening and closing motion perpendicular to the closing faces
- F16K1/24—Lift valves or globe valves, i.e. cut-off apparatus with closure members having at least a component of their opening and closing motion perpendicular to the closing faces with valve members that, on opening of the valve, are initially lifted from the seat and next are turned around an axis parallel to the seat
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F16—ENGINEERING ELEMENTS AND UNITS; GENERAL MEASURES FOR PRODUCING AND MAINTAINING EFFECTIVE FUNCTIONING OF MACHINES OR INSTALLATIONS; THERMAL INSULATION IN GENERAL
- F16K—VALVES; TAPS; COCKS; ACTUATING-FLOATS; DEVICES FOR VENTING OR AERATING
- F16K51/00—Other details not peculiar to particular types of valves or cut-off apparatus
- F16K51/02—Other details not peculiar to particular types of valves or cut-off apparatus specially adapted for high-vacuum installations
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67126—Apparatus for sealing, encapsulating, glassing, decapsulating or the like
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T137/00—Fluid handling
- Y10T137/8593—Systems
- Y10T137/86493—Multi-way valve unit
- Y10T137/86863—Rotary valve unit
Landscapes
- Engineering & Computer Science (AREA)
- General Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Mechanical Engineering (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Plasma & Fusion (AREA)
- Sliding Valves (AREA)
- Details Of Valves (AREA)
Abstract
Description
13 弁体部
15 第1弁体部
17 第2弁体部
12A、12B、12C、12D 処理チャンバ
20A、20B、20C、20D ゲートバルブ装置
27 第1シール溝(溝)
29 弁体シール部(第1シール部材)
31 位置決めピン(位置決め部材)
38 搬入開口(チャンバ側開口部)
39 メンテナンス用シール部(第2シール部材)
43 緩衝用シート(緩衝用部材)
44 筐体
46 搬出入口(第1開口部)
52 弁体部
54 弁体駆動機構(弁体駆動部)
56 第1弁体部
57 第2弁体部
58 弁体シール部(第1シール部材)
60 メンテナンス用シール部(第2シール部材)
62 メンテナンス用開口(第2開口部)
W 半導体ウエーハ(被処理体)
Claims (5)
- 一方の側壁部に第1開口部が形成され、他方の側壁部に開口面積が前記第1開口部の開口面積よりも大きくかつ長手方向長さが前記第1開口部の長手方向長さよりも長くなる第2開口部が形成された筐体の内部に設けられ、前記第1開口部及び前記第2開口部を閉塞又は開放する弁体部であって、
前記第1開口部は、長手方向両端部が円弧状に形成され、
前記第2開口部は、前記第2開口部の長手方向中心部における第2開口部長手方向と直交する方向の長さより、前記第2開口部の長手方向両端部における第2開口部長手方向と直交する方向の長さが短くなるように形成され、
前記第1開口部の形状と略同じ形状に形成され前記第1開口部を閉塞する第1弁体部と、前記第2開口部の形状と略同じ形状に形成され前記第2開口部を閉塞する第2弁体部と、を有し、
前記第1弁体部には、前記第1開口部を気密にシールする第1シール部材が装着され、
前記第2弁体部には、前記第2開口部を気密にシールする第2シール部材が装着されていることを特徴とする弁体部。 - 前記第1弁体部は、前記弁体部の厚み方向に対して直交する方向の平面に沿って前記第2弁体部から分離され、
前記第2弁体部が前記第2開口部を閉塞した状態で、前記第1弁体部が前記第2弁体部に対して着脱可能に構成されていることを特徴とする請求項1に記載の弁体部。 - 前記第1弁体部と前記第2弁体部との間には、緩衝用部材が介在されていることを特徴とする請求項2に記載の弁体部。
- 前記第1弁体部と前記第2弁体部との間には、前記第1弁体部を前記第2弁体部に対して位置決めするための位置決め部材が設けられていることを特徴とする請求項2又は3に記載の弁体部。
- 請求項1乃至4のいずれか1項に記載の前記弁体部と、
前記弁体部を所定の回転軸回りに回転駆動させる弁体駆動部と、
を備えたことを特徴とするゲートバルブ装置。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2008522453A JP4763786B2 (ja) | 2006-06-19 | 2007-06-18 | 弁体部及びゲートバルブ装置 |
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006168767 | 2006-06-19 | ||
JP2006168767 | 2006-06-19 | ||
PCT/JP2007/062249 WO2007148657A1 (ja) | 2006-06-19 | 2007-06-18 | 弁体部及びゲートバルブ装置 |
JP2008522453A JP4763786B2 (ja) | 2006-06-19 | 2007-06-18 | 弁体部及びゲートバルブ装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPWO2007148657A1 true JPWO2007148657A1 (ja) | 2009-11-19 |
JP4763786B2 JP4763786B2 (ja) | 2011-08-31 |
Family
ID=38833399
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2008522453A Expired - Fee Related JP4763786B2 (ja) | 2006-06-19 | 2007-06-18 | 弁体部及びゲートバルブ装置 |
Country Status (6)
Country | Link |
---|---|
US (1) | US8047231B2 (ja) |
EP (1) | EP2031284B1 (ja) |
JP (1) | JP4763786B2 (ja) |
KR (1) | KR101015801B1 (ja) |
TW (1) | TWI390134B (ja) |
WO (1) | WO2007148657A1 (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5415647B1 (ja) * | 2013-08-21 | 2014-02-12 | 株式会社ミウラ | スプリット弁 |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2008144670A1 (en) * | 2007-05-18 | 2008-11-27 | Brooks Automation, Inc. | Load lock fast pump vent |
US10541157B2 (en) | 2007-05-18 | 2020-01-21 | Brooks Automation, Inc. | Load lock fast pump vent |
KR101123299B1 (ko) * | 2010-02-04 | 2012-03-20 | (주)엘티엘 | 진공 차단장치 및 이를 포함하는 영상표시장치 제조설비 |
KR101363987B1 (ko) * | 2012-03-30 | 2014-02-20 | 주식회사 에이티에스엔지니어링 | 게이트 밸브 |
KR101918512B1 (ko) * | 2018-07-10 | 2018-11-15 | 이노레스 주식회사 | 진공밸브용 개폐플레이트 |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH05306779A (ja) * | 1992-05-06 | 1993-11-19 | Kobe Steel Ltd | ゲート弁 |
JP3335010B2 (ja) | 1994-08-19 | 2002-10-15 | 東京エレクトロン株式会社 | 処理装置 |
JP3093983B2 (ja) | 1996-12-27 | 2000-10-03 | 光雄 手塚 | 流路開閉バルブ |
US6045620A (en) * | 1997-07-11 | 2000-04-04 | Applied Materials, Inc. | Two-piece slit valve insert for vacuum processing system |
US6347918B1 (en) * | 1999-01-27 | 2002-02-19 | Applied Materials, Inc. | Inflatable slit/gate valve |
JP4225647B2 (ja) * | 1999-09-08 | 2009-02-18 | キヤノンアネルバ株式会社 | ゲートバルブ |
US6800172B2 (en) * | 2002-02-22 | 2004-10-05 | Micron Technology, Inc. | Interfacial structure for semiconductor substrate processing chambers and substrate transfer chambers and for semiconductor substrate processing chambers and accessory attachments, and semiconductor substrate processor |
JP2004076893A (ja) | 2002-08-21 | 2004-03-11 | Kitz Sct:Kk | ゲートバルブ |
US7214274B2 (en) * | 2003-03-17 | 2007-05-08 | Tokyo Electron Limited | Method and apparatus for thermally insulating adjacent temperature controlled processing chambers |
US7282097B2 (en) * | 2004-06-14 | 2007-10-16 | Applied Materials, Inc. | Slit valve door seal |
JP2006057816A (ja) * | 2004-08-24 | 2006-03-02 | Nippon Valqua Ind Ltd | 片真空ゲート弁 |
JP4010314B2 (ja) | 2004-12-17 | 2007-11-21 | 東京エレクトロン株式会社 | ゲートバルブ装置、処理システム及びシール部材の交換方法 |
US7637477B2 (en) * | 2004-12-17 | 2009-12-29 | Tokyo Electron Limited | Gate valve apparatus of vacuum processing system |
-
2007
- 2007-06-18 US US12/227,979 patent/US8047231B2/en not_active Expired - Fee Related
- 2007-06-18 JP JP2008522453A patent/JP4763786B2/ja not_active Expired - Fee Related
- 2007-06-18 KR KR1020087031487A patent/KR101015801B1/ko active IP Right Grant
- 2007-06-18 EP EP07767147.7A patent/EP2031284B1/en active Active
- 2007-06-18 WO PCT/JP2007/062249 patent/WO2007148657A1/ja active Application Filing
- 2007-07-27 TW TW96127631A patent/TWI390134B/zh not_active IP Right Cessation
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5415647B1 (ja) * | 2013-08-21 | 2014-02-12 | 株式会社ミウラ | スプリット弁 |
Also Published As
Publication number | Publication date |
---|---|
EP2031284A1 (en) | 2009-03-04 |
TWI390134B (zh) | 2013-03-21 |
EP2031284B1 (en) | 2018-09-12 |
US20090108226A1 (en) | 2009-04-30 |
WO2007148657A1 (ja) | 2007-12-27 |
EP2031284A4 (en) | 2013-03-27 |
US8047231B2 (en) | 2011-11-01 |
KR20090014397A (ko) | 2009-02-10 |
TW200900612A (en) | 2009-01-01 |
KR101015801B1 (ko) | 2011-02-18 |
JP4763786B2 (ja) | 2011-08-31 |
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