KR101015801B1 - 밸브체부 및 게이트 밸브 장치 - Google Patents
밸브체부 및 게이트 밸브 장치 Download PDFInfo
- Publication number
- KR101015801B1 KR101015801B1 KR1020087031487A KR20087031487A KR101015801B1 KR 101015801 B1 KR101015801 B1 KR 101015801B1 KR 1020087031487 A KR1020087031487 A KR 1020087031487A KR 20087031487 A KR20087031487 A KR 20087031487A KR 101015801 B1 KR101015801 B1 KR 101015801B1
- Authority
- KR
- South Korea
- Prior art keywords
- valve body
- body portion
- opening
- valve
- seal
- Prior art date
Links
- 238000000034 method Methods 0.000 claims description 15
- 238000007789 sealing Methods 0.000 claims description 10
- 238000004519 manufacturing process Methods 0.000 abstract description 10
- 238000012423 maintenance Methods 0.000 description 76
- 238000012545 processing Methods 0.000 description 26
- 235000012431 wafers Nutrition 0.000 description 17
- 229910052751 metal Inorganic materials 0.000 description 15
- 239000002184 metal Substances 0.000 description 15
- 239000002245 particle Substances 0.000 description 12
- 239000007795 chemical reaction product Substances 0.000 description 9
- 238000003780 insertion Methods 0.000 description 7
- 230000037431 insertion Effects 0.000 description 7
- 239000004065 semiconductor Substances 0.000 description 7
- 238000012546 transfer Methods 0.000 description 6
- 238000005192 partition Methods 0.000 description 4
- 230000002829 reductive effect Effects 0.000 description 4
- 238000000638 solvent extraction Methods 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 239000012495 reaction gas Substances 0.000 description 3
- 239000011800 void material Substances 0.000 description 3
- 239000000853 adhesive Substances 0.000 description 2
- 238000005452 bending Methods 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- 239000000428 dust Substances 0.000 description 2
- 230000036961 partial effect Effects 0.000 description 2
- 229920001343 polytetrafluoroethylene Polymers 0.000 description 2
- 239000004810 polytetrafluoroethylene Substances 0.000 description 2
- 239000000843 powder Substances 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- 230000035939 shock Effects 0.000 description 2
- 239000004925 Acrylic resin Substances 0.000 description 1
- 229920000178 Acrylic resin Polymers 0.000 description 1
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 230000006835 compression Effects 0.000 description 1
- 238000007906 compression Methods 0.000 description 1
- 230000008602 contraction Effects 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000002401 inhibitory effect Effects 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- -1 polytetrafluoroethylene Polymers 0.000 description 1
- 230000002441 reversible effect Effects 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F16—ENGINEERING ELEMENTS AND UNITS; GENERAL MEASURES FOR PRODUCING AND MAINTAINING EFFECTIVE FUNCTIONING OF MACHINES OR INSTALLATIONS; THERMAL INSULATION IN GENERAL
- F16K—VALVES; TAPS; COCKS; ACTUATING-FLOATS; DEVICES FOR VENTING OR AERATING
- F16K1/00—Lift valves or globe valves, i.e. cut-off apparatus with closure members having at least a component of their opening and closing motion perpendicular to the closing faces
- F16K1/24—Lift valves or globe valves, i.e. cut-off apparatus with closure members having at least a component of their opening and closing motion perpendicular to the closing faces with valve members that, on opening of the valve, are initially lifted from the seat and next are turned around an axis parallel to the seat
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F16—ENGINEERING ELEMENTS AND UNITS; GENERAL MEASURES FOR PRODUCING AND MAINTAINING EFFECTIVE FUNCTIONING OF MACHINES OR INSTALLATIONS; THERMAL INSULATION IN GENERAL
- F16K—VALVES; TAPS; COCKS; ACTUATING-FLOATS; DEVICES FOR VENTING OR AERATING
- F16K51/00—Other details not peculiar to particular types of valves or cut-off apparatus
- F16K51/02—Other details not peculiar to particular types of valves or cut-off apparatus specially adapted for high-vacuum installations
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67126—Apparatus for sealing, encapsulating, glassing, decapsulating or the like
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T137/00—Fluid handling
- Y10T137/8593—Systems
- Y10T137/86493—Multi-way valve unit
- Y10T137/86863—Rotary valve unit
Landscapes
- Engineering & Computer Science (AREA)
- General Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Mechanical Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Plasma & Fusion (AREA)
- Details Of Valves (AREA)
- Sliding Valves (AREA)
Abstract
Description
Claims (5)
- 일방의 측벽부(側壁部)에 제1개구부(第1開口部)가 형성되고, 타방의 측벽부에 개구면적이 상기 제1개구부의 개구면적보다 크고 또한 길이방향 길이가 상기 제1개구부의 길이방향 길이보다 길게 되는 제2개구부(第2開口部)가 형성된 케이싱의 내부에 설치되어, 상기 제1개구부 및 상기 제2개구부를 폐쇄 또는 개방하는 밸브체부로서,상기 제1개구부는, 길이방향 양단부가 원호 모양으로 형성되고,상기 제2개구부는, 상기 제2개구부의 길이방향 중심부에 있어서의 제2개구부 길이방향과 직교하는 방향의 길이보다, 상기 제2개구부의 길이방향 양단부에 있어서의 제2개구부 길이방향과 직교하는 방향의 길이가 짧아지도록 형성되고,상기 제1개구부의 형상과 같은 형상으로 형성되고 상기 제1개구부를 폐쇄하는 제1밸브체부와, 상기 제2개구부의 형상과 같은 형상으로 형성되고 상기 제2개구부를 폐쇄하는 제2밸브체부를 구비하고,상기 제1밸브체부에는, 상기 제1개구부를 기밀하게 씰(seal) 하는 제1씰 부재가 장착되고,상기 제2밸브체부에는, 상기 제2개구부를 기밀하게 씰 하는 제2씰 부재가 장착되는 것을 특징으로 하는 밸브체부.
- 제1항에 있어서,상기 제1밸브체부는, 상기 밸브체부의 두께방향에 대하여 직교하는 방향의 평면을 따라 상기 제2밸브체부에서 분리되고,상기 제2밸브체부가 상기 제2개구부를 폐쇄한 상태에서, 상기 제1밸브체부가 상기 제2밸브체부에 대하여 착탈 가능하도록 구성되는 것을 특징으로 하는 밸브체부.
- 제2항에 있어서,상기 제1밸브체부와 상기 제2밸브체부의 사이에는, 완충용 부재가 삽입되는 것을 특징으로 하는 밸브체부.
- 제2항 또는 제3항에 있어서,상기 제1밸브체부와 상기 제2밸브체부의 사이에는, 상기 제1밸브체부를 상기 제2밸브체부에 대하여 위치결정 하기 위한 위치결정 부재가 설치되는 것을 특징으로 하는 밸브체부.
- 청구항 제1항 내지 청구항 제3항 중의 어느 한 항에 기재된 상기 밸브체부와,상기 밸브체부를 소정의 회전축을 중심으로 회전구동 시키는 밸브체 구동부를구비하는 것을 특징으로 하는 게이트 밸브 장치.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JPJP-P-2006-168767 | 2006-06-19 | ||
JP2006168767 | 2006-06-19 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20090014397A KR20090014397A (ko) | 2009-02-10 |
KR101015801B1 true KR101015801B1 (ko) | 2011-02-18 |
Family
ID=38833399
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020087031487A KR101015801B1 (ko) | 2006-06-19 | 2007-06-18 | 밸브체부 및 게이트 밸브 장치 |
Country Status (6)
Country | Link |
---|---|
US (1) | US8047231B2 (ko) |
EP (1) | EP2031284B1 (ko) |
JP (1) | JP4763786B2 (ko) |
KR (1) | KR101015801B1 (ko) |
TW (1) | TWI390134B (ko) |
WO (1) | WO2007148657A1 (ko) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10541157B2 (en) | 2007-05-18 | 2020-01-21 | Brooks Automation, Inc. | Load lock fast pump vent |
WO2008144670A1 (en) | 2007-05-18 | 2008-11-27 | Brooks Automation, Inc. | Load lock fast pump vent |
KR101123299B1 (ko) * | 2010-02-04 | 2012-03-20 | (주)엘티엘 | 진공 차단장치 및 이를 포함하는 영상표시장치 제조설비 |
KR101363987B1 (ko) * | 2012-03-30 | 2014-02-20 | 주식회사 에이티에스엔지니어링 | 게이트 밸브 |
JP5415647B1 (ja) * | 2013-08-21 | 2014-02-12 | 株式会社ミウラ | スプリット弁 |
KR101918512B1 (ko) * | 2018-07-10 | 2018-11-15 | 이노레스 주식회사 | 진공밸브용 개폐플레이트 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH05306779A (ja) * | 1992-05-06 | 1993-11-19 | Kobe Steel Ltd | ゲート弁 |
JP2001082613A (ja) * | 1999-09-08 | 2001-03-30 | Anelva Corp | ゲートバルブ |
JP2002536597A (ja) * | 1999-01-27 | 2002-10-29 | アプライド マテリアルズ インコーポレイテッド | 可膨張性スリットバルブ及び可膨張性ゲートバルブ |
JP2006057816A (ja) * | 2004-08-24 | 2006-03-02 | Nippon Valqua Ind Ltd | 片真空ゲート弁 |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3335010B2 (ja) | 1994-08-19 | 2002-10-15 | 東京エレクトロン株式会社 | 処理装置 |
JP3093983B2 (ja) | 1996-12-27 | 2000-10-03 | 光雄 手塚 | 流路開閉バルブ |
US6045620A (en) * | 1997-07-11 | 2000-04-04 | Applied Materials, Inc. | Two-piece slit valve insert for vacuum processing system |
US6800172B2 (en) * | 2002-02-22 | 2004-10-05 | Micron Technology, Inc. | Interfacial structure for semiconductor substrate processing chambers and substrate transfer chambers and for semiconductor substrate processing chambers and accessory attachments, and semiconductor substrate processor |
JP2004076893A (ja) | 2002-08-21 | 2004-03-11 | Kitz Sct:Kk | ゲートバルブ |
US7214274B2 (en) * | 2003-03-17 | 2007-05-08 | Tokyo Electron Limited | Method and apparatus for thermally insulating adjacent temperature controlled processing chambers |
US7282097B2 (en) * | 2004-06-14 | 2007-10-16 | Applied Materials, Inc. | Slit valve door seal |
JP4010314B2 (ja) * | 2004-12-17 | 2007-11-21 | 東京エレクトロン株式会社 | ゲートバルブ装置、処理システム及びシール部材の交換方法 |
US7637477B2 (en) * | 2004-12-17 | 2009-12-29 | Tokyo Electron Limited | Gate valve apparatus of vacuum processing system |
-
2007
- 2007-06-18 EP EP07767147.7A patent/EP2031284B1/en active Active
- 2007-06-18 US US12/227,979 patent/US8047231B2/en not_active Expired - Fee Related
- 2007-06-18 JP JP2008522453A patent/JP4763786B2/ja not_active Expired - Fee Related
- 2007-06-18 WO PCT/JP2007/062249 patent/WO2007148657A1/ja active Application Filing
- 2007-06-18 KR KR1020087031487A patent/KR101015801B1/ko active IP Right Grant
- 2007-07-27 TW TW96127631A patent/TWI390134B/zh not_active IP Right Cessation
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH05306779A (ja) * | 1992-05-06 | 1993-11-19 | Kobe Steel Ltd | ゲート弁 |
JP2002536597A (ja) * | 1999-01-27 | 2002-10-29 | アプライド マテリアルズ インコーポレイテッド | 可膨張性スリットバルブ及び可膨張性ゲートバルブ |
JP2001082613A (ja) * | 1999-09-08 | 2001-03-30 | Anelva Corp | ゲートバルブ |
JP2006057816A (ja) * | 2004-08-24 | 2006-03-02 | Nippon Valqua Ind Ltd | 片真空ゲート弁 |
Also Published As
Publication number | Publication date |
---|---|
TWI390134B (zh) | 2013-03-21 |
JP4763786B2 (ja) | 2011-08-31 |
EP2031284A4 (en) | 2013-03-27 |
EP2031284B1 (en) | 2018-09-12 |
WO2007148657A1 (ja) | 2007-12-27 |
EP2031284A1 (en) | 2009-03-04 |
US8047231B2 (en) | 2011-11-01 |
KR20090014397A (ko) | 2009-02-10 |
TW200900612A (en) | 2009-01-01 |
US20090108226A1 (en) | 2009-04-30 |
JPWO2007148657A1 (ja) | 2009-11-19 |
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