JPS6489347A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS6489347A
JPS6489347A JP24718087A JP24718087A JPS6489347A JP S6489347 A JPS6489347 A JP S6489347A JP 24718087 A JP24718087 A JP 24718087A JP 24718087 A JP24718087 A JP 24718087A JP S6489347 A JPS6489347 A JP S6489347A
Authority
JP
Japan
Prior art keywords
glass
temperature
cap
mounting
melting point
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP24718087A
Other languages
Japanese (ja)
Inventor
Hiroaki Sato
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP24718087A priority Critical patent/JPS6489347A/en
Publication of JPS6489347A publication Critical patent/JPS6489347A/en
Pending legal-status Critical Current

Links

Landscapes

  • Lead Frames For Integrated Circuits (AREA)

Abstract

PURPOSE:To reduce a sealing temperature by employing a glass material for securing a lead frame to a ceramic substrate, having higher melting point than the mounting temperature of a semiconductor chip and that of glass for securing a cap. CONSTITUTION:A lead frame 4 is secured to a ceramic substrate 1 with glass 7 having higher melting point than the temperature of mounting a semiconductor chip 5. Thus, since the glass 7 is not melted at the time of mounting, the displacement of the frame 4 does not occur. Since the cap 2 can be sealed at the melting temperature of low melting point sealing glass 3 of the side of the cap 2, it can be sealed at lower temperature, thereby reducing the disconnections of wirings due to an alloy spike, a stress migration. Accordingly, a semiconductor device having high reliability can be obtained.
JP24718087A 1987-09-29 1987-09-29 Semiconductor device Pending JPS6489347A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP24718087A JPS6489347A (en) 1987-09-29 1987-09-29 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP24718087A JPS6489347A (en) 1987-09-29 1987-09-29 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS6489347A true JPS6489347A (en) 1989-04-03

Family

ID=17159631

Family Applications (1)

Application Number Title Priority Date Filing Date
JP24718087A Pending JPS6489347A (en) 1987-09-29 1987-09-29 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS6489347A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02303053A (en) * 1989-05-17 1990-12-17 Sumitomo Special Metals Co Ltd Manufacture of semiconductor package
JPH04254356A (en) * 1991-02-06 1992-09-09 Nec Corp Package for glass sealed ic

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02303053A (en) * 1989-05-17 1990-12-17 Sumitomo Special Metals Co Ltd Manufacture of semiconductor package
JPH04254356A (en) * 1991-02-06 1992-09-09 Nec Corp Package for glass sealed ic

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