JPS6474788A - Semiconductor laser - Google Patents

Semiconductor laser

Info

Publication number
JPS6474788A
JPS6474788A JP62233123A JP23312387A JPS6474788A JP S6474788 A JPS6474788 A JP S6474788A JP 62233123 A JP62233123 A JP 62233123A JP 23312387 A JP23312387 A JP 23312387A JP S6474788 A JPS6474788 A JP S6474788A
Authority
JP
Japan
Prior art keywords
semiconductor laser
lead
laser pellet
polarity
heat sink
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP62233123A
Other languages
Japanese (ja)
Inventor
Hirokazu Fujisawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP62233123A priority Critical patent/JPS6474788A/en
Publication of JPS6474788A publication Critical patent/JPS6474788A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491—Disposition
    • H01L2224/4911—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain
    • H01L2224/49113—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain the connectors connecting different bonding areas on the semiconductor or solid-state body to a common bonding area outside the body, e.g. converging wires
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/0105—Tin [Sn]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01079—Gold [Au]

Landscapes

  • Semiconductor Lasers (AREA)
  • Wire Bonding (AREA)

Abstract

PURPOSE:To change the polarity of a semiconductor laser pellet, and to prevent the alteration of the polarity of a lead for external connection by setting up a first electrode formed to a heat sink, a second electrode shaped onto the surface on the side reverse to a mounting surface in the semiconductor laser pellet and the lead for external connection for wire bonding to one of the electrodes. CONSTITUTION:A heat sink 2 on which a semiconductor laser pellet 1 is bonded is cemented to a copper block 5 in a stem by normal lead tin solder. The semiconductor laser pellet 1 and a bonding section 12 projected and shaped from the copper block 5 are connected by a gold wire 11, and a gold electrode 4 for the heat sink 2 and a lead 7 are connected by a gold wire 6. A photo-diode 10 for monitor and a lead 8 are connected by a gold wire 9, and these parts are covered with a cap with window glass from an upper section and sealed. When a semiconductor laser pellet 21 having polarity reverse to the semiconductor laser pellet 1 is mounted, the semiconductor laser pellet 21 and the lead 7 are connected by a gold wire 26, the gold electrode 4 for the heat sink 2 and the bonding section 12 are connected by a gold wire 31, and the polarity of the lead 7 is equalized.
JP62233123A 1987-09-16 1987-09-16 Semiconductor laser Pending JPS6474788A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62233123A JPS6474788A (en) 1987-09-16 1987-09-16 Semiconductor laser

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62233123A JPS6474788A (en) 1987-09-16 1987-09-16 Semiconductor laser

Publications (1)

Publication Number Publication Date
JPS6474788A true JPS6474788A (en) 1989-03-20

Family

ID=16950116

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62233123A Pending JPS6474788A (en) 1987-09-16 1987-09-16 Semiconductor laser

Country Status (1)

Country Link
JP (1) JPS6474788A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20040023452A (en) * 2002-09-11 2004-03-18 (주)솔로스세미콘 The structure of laser diode and the manufacturing method for protecting static electricity and surge

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20040023452A (en) * 2002-09-11 2004-03-18 (주)솔로스세미콘 The structure of laser diode and the manufacturing method for protecting static electricity and surge

Similar Documents

Publication Publication Date Title
EP0393206A4 (en) Image sensor and method of producing the same
GB8730196D0 (en) Silver-filled glass
MY105031A (en) Resin-sealed type semiconductor device and method for manufacturing the same.
JPS6474788A (en) Semiconductor laser
EP0477801B1 (en) Optical semiconductor device
JPS57197838A (en) Semiconductor flip chip element
IE821840L (en) Silver filled glass
JPS6459947A (en) Semiconductor device
JPS5745262A (en) Sealing and fitting structure of semiconductor device
JPS6489347A (en) Semiconductor device
JPS6218737A (en) Ceramic package for semiconductor device
JPS63245986A (en) Semiconductor laser
JPS6461029A (en) Formation of bump electrode bond
JPS54129880A (en) Manufacture for semiconductor device
JPS6459972A (en) Optical semiconductor device
JPS5790992A (en) Semiconductor laser device
JPS5758370A (en) Photo device
JPS647630A (en) Bonding structure of semiconductor device
JPS58124248A (en) Semiconductor device
JPS6436059A (en) Lead frame of semiconductor device
JPS57114242A (en) Semiconductor device
JPS6437890A (en) Semiconductor light-emitting device
JPS6155778B2 (en)
JPS62198142A (en) Semiconductor device
JPS6428845A (en) Semiconductor device