JPH02303053A - Manufacture of semiconductor package - Google Patents

Abstract

PURPOSE:To increase mechanical strength, heat dissipation, and electromagnetic shielding property by a method wherein, when high melting point glass is baked on a metal substrate, inner leads and outer leads made of specified metal are stuck in a body, and then a metal cap is sealed by using low melting point glass. CONSTITUTION:High melting point glass 13 turning to an insulating layer is printed and spread on a metal substrate 12 of a low thermal expansion coefficient alloy plate, and then baked; an inner lead 15 constituted of Al, Cu metal thin film and an outer lead 14 connected with the inner lead 15 are stuck in a body. After a semiconductor chip 11 is connected with the leads 15, a metal cap 17 and the leads 15, 14 are sealed by using low melting point glass 18, and the chip 11 is sealed. By this constitution, a small-sized semiconductor package wherein mechanical strength, heat dissipation, and electromagnetic shielding property are increased is easily manufactured.

Description

DETAILED DESCRIPTION OF THE INVENTION Field of Industrial Application This invention relates to a method of manufacturing a semiconductor package using a low thermal expansion alloy plate as a substrate on which a semiconductor chip is placed, and in which a glass insulating layer is used on the substrate on which inner and outer lead members are placed. The present invention relates to a manufacturing method for obtaining a semiconductor package that has excellent mechanical strength, is easy to handle, has an electromagnetic shielding effect, and has excellent heat dissipation properties by sealing a cap made of, for example, a low thermal expansion alloy with glass.

BACKGROUND ART Conventionally, a so-called plastic package, as shown in FIG. 7, in which a semiconductor chip (hereinafter referred to as a chip) is sealed with plastic, has been widely used as a semiconductor package.

That is, the plastic package (1) contains the chip (
2) is placed on the island (4) formed in the center of the lead frame (3), fixed with waxing material, adhesive, solder, etc., and stitched (5) (inner lead part). It is electrically connected to via a bonding wire (6), and the periphery is further sealed with a resin (7).

Plastic packages are easy to mass-produce and are inexpensive, but since the plastic itself is inherently hygroscopic, the sealing is not perfect and is easily affected by the surrounding environment, reducing chip reliability and increasing integration. It is said that it cannot be used in high-performance chip packages that require multi-functionality.

Semiconductor package chips, such as LSI and ULSI for large computers, are moving toward higher integration and faster calculation speed, and the amount of heat generated due to the increase in power consumption during operation has become extremely large. There is. Additionally, there is a strong demand for semiconductor packages to have a larger number of bins and to be smaller.

In the resin-sealed package (1), as shown in FIG. 7, the lead frame not only serves as a path for electrical connection to the outside of the semiconductor chip, but also as a dissipation path for heat generated in the chip (2). plays an important role as

Therefore, the lead frame (3) is desired to be made of a material with good thermal conductivity in order to dissipate the heat generated from the chip to the outside of the package.

On the other hand, peeling of the adhesive interface between the chip (2) and the island (4) and cracks observed in the resin (7) are caused by the chip (
2) and the difference in thermal expansion coefficient between the sealing resin (7) and the lead frame (3).In order to prevent this, it is necessary to Matching the coefficient of thermal expansion with the frame (3) is essential.

As described above, plastic packages have poor heat dissipation properties, are limited in lead frame materials, and are particularly unable to reduce electrical resistance.

Furthermore, since plastic packages do not have an electromagnetic shielding effect, there is a problem in that they cannot prevent the influence of external noise.

Purpose of the Invention The present invention solves the above-mentioned problems of plastic packages, has excellent mechanical strength and heat dissipation, has an electromagnetic shielding effect, and satisfies the recent demands for multi-bin size and miniaturization. The purpose of the present invention is to provide a manufacturing method that can mass-produce semiconductor packages.

SUMMARY OF THE INVENTION This invention comprises a substrate on which a chip is disposed and a cap that encloses the chip, both of which are made of a low thermal expansion alloy, in particular a high melting point glass is applied as an insulating layer on the upper surface of the substrate, and these substrates and the cap are made of a low thermal expansion alloy. In addition to integrating the two with low melting point glass and using Al or Cu for the internal lead portion where wire bonding is performed,
The above object has been achieved by employing recent thin film formation technology for forming these arrangements, and by selecting appropriate means for connecting the internal leads and external leads.

That is, the present invention provides a method for manufacturing a semiconductor package in which a semiconductor chip is placed on the top surface of a substrate, internal leads and external leads are arranged, and the semiconductor package is sealed with a cap. Department,
After applying high melting point glass to the parts where the inner and outer lead members are arranged, when firing it to form a metal substrate, the end surfaces of the outer leads are exposed from the high melting point glass when the high melting point glass is fired. A thin metal film made of Al or Cu, which will become an internal lead, is attached to the upper surface of the metal substrate by connecting it to the exposed portion of the external lead member, and a semiconductor chip is fixed to the surface of the metal substrate. The method for manufacturing a semiconductor package includes the steps of wire bonding the chip and internal leads, and integrating at least a cap enclosing the semiconductor chip with the metal substrate via a low-melting glass.

Further, the present invention is a method for manufacturing a semiconductor package that effectively utilizes the use of Al for the internal lead material and Cu or Cu alloy for the external lead material, or a material whose surface is plated with Cu, and includes a metal having the above structure. A substrate is formed, a thin metal film made of Al that becomes an internal lead is deposited on the top surface of the metal substrate, and one end of an external lead member made of Cu or a Cu alloy or whose surface is plated with Cu is placed on one end of the internal lead. Thereafter, the semiconductor chip is fixed by heating and diffusion, and the semiconductor chip is fixed on the surface of the metal substrate, and the chip and internal leads are wire-bonded, and a cap enclosing at least the semiconductor chip is bonded to the metal substrate via low-melting glass. This is a method for manufacturing a semiconductor package characterized by integrating the semiconductor package.

Preferred Embodiment The substrate material used in this invention is Fe-Cr alloy (
18Cr-Fe, etc.), Fe-Ni-0r alloy (42N
i-6Cr-Fe, etc.), Fe-Ni alloy (42Ni-
Fe, etc.), Fe-Ni-Co alloy (29Ni-16C
Known low thermal expansion alloys such as o-Fe, etc.) can be used.

In particular, it is desirable to select an optimal alloy in accordance with the coefficient of thermal expansion of high melting point glass, chips, etc., which will be described later.

In addition, in consideration of heat dissipation, the substrate material may be a cladding material of the above-mentioned low thermal expansion alloy in which Cu, Cu alloy, etc. with good thermal conductivity is arranged in the intermediate layer, such as Invar ICu/Invar,
Kovar/Cu/Kovar can also be used.

As the high melting point glass to be adhered to the upper surface of the above low thermal expansion alloy, PB glass etc. can be used. Considering heat generation from the chip, the difference in thermal expansion coefficient between the chip and the substrate material is small, and the mechanical strength is low. It is desirable that the bonding temperature is high, and that the wettability with Al and Cu of the lead member is good.

In this invention, the high melting point glass has a high melting point relative to the low melting point glass used for sealing with the cap, and may be any high melting point glass that does not melt during sealing. It is preferable to appropriately select the melting and softening temperature of the glass necessary for adhesion, taking into consideration the characteristics of the glass and manufacturing workability.

Furthermore, depending on the method used to form the metal thin film wiring that will become the internal leads (described later), high-melting point glass may be coated with corrosion-resistant material to prevent it from reacting with the etching solution. It is desirable to select an excellent one.

To coat the low thermal expansion alloy with high melting point glass, if the external lead member is to be fixed at the same time when the high melting point glass is fired, glass powder consisting of a predetermined particle size (usually 200 mesh to 300 mesh) is used, taking into consideration the thickness of the lead part side. Known techniques can be employed, such as applying the material to a desired thickness by screen printing, electrodeposition, etc., and then baking and integrating the material.

In addition, if a method is adopted in which a metal thin film wiring of an internal lead is formed on a metal substrate in advance, and then an external lead member is placed on the end of the wiring and fixed by heating and diffusing, the above-mentioned screen printing, electrodeposition In addition to the above, it is also possible to adopt a method in which a high melting point glass plate is placed on the upper surface of the substrate and then heated and pressurized to a temperature higher than the softening temperature of the high melting point glass to integrate them.

The ratio A/B between the thickness A) of the low thermal expansion alloy plate of the metal substrate and the thickness B) of the high melting point glass is selected taking into consideration dielectric strength voltage, mutual coefficient of thermal expansion, thermal conductivity, etc. Normally 10/
A range of 0.5 to 1015 is desirable.

The insulating layer of high melting point glass does not necessarily have to be provided on the entire surface of the metal substrate, but it is better to provide it at least in the sealing area of the metal substrate and in the area where the inner and outer lead members are arranged.For example, taking into consideration the dissipation of heat from the chip. By doing so, the chip can be directly fixed to the metal substrate.

Furthermore, in order to improve the adhesion between the low thermal expansion alloy and the high melting point glass, it is desirable to interpose an oxide film between the low thermal expansion alloy and the high melting point glass, especially when the low thermal expansion alloy contains Cr. is based on the applicant's earlier proposal (Japanese Unexamined Patent Publication No. 6
No. 3-47955), a method such as forming an oxide film mainly composed of Cr2O3 on the main surface of a low thermal expansion alloy by heat treatment and then covering it with high melting point glass can be adopted.

That is, a low thermal expansion alloy plate containing Cr is sandwiched between flat ceramic plates and heated to 1000°C to 1300°C in a moist H2 gas with a dew point of 10°C to 50°C while applying pressure to form a Cr2O3 film with a film thickness of 10 pm or less. After forming an oxide film mainly composed of , high melting point glass is coated on the main surface of the low thermal expansion alloy plate through the oxide film.

On the other hand, as the material of the cap for enclosing the chip, a known low thermal expansion alloy can be used, similar to the above-mentioned substrate material.
At this time, the cap material does not necessarily have to be the same material as the substrate material, and other materials such as transparent glass can also be used.

The low melting point glass for sealing the cap needs to be placed only at the sealing joint between the cap and the substrate, and the method of adhering it to the cap may be screen printing or electrodeposition followed by firing, taking into consideration workability. Known means such as doing this can be employed.

Further, in order to improve the adhesion with the low thermal expansion alloy, it is also preferable to interpose an oxide film between the low melting point glass and the low thermal expansion alloy.

The above-mentioned low melting point glass has a difference in thermal expansion coefficient and thermal conductivity with the cap material such as a low thermal expansion alloy or transparent glass, etc., and the bonding between the cap and the metal substrate is performed after chip bonding. It is desirable to set the bonding temperature as low as possible so as not to adversely affect the bonding temperature. For example, PB glass having a melting temperature of 500° C. or lower can be used.

In this invention, the internal lead can be formed by easily and precisely depositing a metal thin film wiring made of Al or Cu on the upper surface of the high melting point glass forming the insulating layer using a known thin film forming technique. is preferably about 5 to 10 pm.

In other words, the internal leads can be deposited by masking a predetermined position on the upper surface of the insulating layer, then depositing Al or Cu, and then removing the mask material again, or by applying Al or Cu to the entire upper surface of the insulating layer in advance. A method may be adopted in which Cu is pasted or deposited by vapor deposition or the like, and then unnecessary portions are removed by etching.

A1 and Cu for the internal leads are not only cheaper than, for example, W or Mn-Mo alloys, but also have the advantage that thin film formation techniques such as vapor deposition and etching can be easily applied, and wire bonding with chips is also easy. There is.

In addition, it has a lower electrical resistance than W, Mn-Mo alloys, etc., and can contribute to reducing heat generation during use and improving response time. In particular, in the case of Al, it has high adhesion to high melting point glass, and can significantly reduce damage and malfunction due to peeling of thin film wiring during use.

The lead frame and lead pins that are connected to the ends of the internal leads and serve as external leads can be made of a known low thermal expansion alloy similar to the material used for metal substrates and metal caps, and the outer surface of conventional lead frame materials is made of Cu. It is preferable to use a plated material having characteristics such as electrical resistance equivalent to Cu or Cu alloy.

DISCLOSURE BASED ON THE DRAWINGS FIGS. 1a, b, 3, 4, and 5 are longitudinal sectional views showing one embodiment of a semiconductor package manufactured by the method of the present invention. FIGS. 2a-d and 6a-e are partial longitudinal sectional views of a semiconductor package showing an embodiment of the manufacturing process of the present invention.

The semiconductor package (10) shown in FIG.
High melting point glass (1
3) is used.

The external leads (14) provided on the high melting point glass (13) layer consist of a so-called lead frame, and the internal leads (15) likewise consist of A1 or Cu thin film wiring formed in a desired pattern on the insulating layer. One end of each is laminated and connected. Furthermore, the internal leads (15) are connected to the chip (11) with bonding wires (16).

The metal cap (17) is made of a low thermal expansion alloy.
The chip (11) placed on the metal substrate (12)
), internal leads (15) and bonding wires (16)
) and are sealed to the metal substrate (12) via a low melting point glass (18).

In the above configuration, the metal cap (17) and the metal substrate (
12), the external lead (14) and the internal lead (
15) Since they are sandwiched together, the bonding strength is high, and it is possible to prevent cracks from occurring at the bonded portion between the two, resulting in an extremely high sealing effect.

Moreover, the semiconductor package (20) shown in FIG.
It has the same structure as the semiconductor package (10) shown in Fig. a above, and has the structure and effect that both the external lead (24) and the internal lead (25) are sandwiched between the metal cap (27) and the metal substrate (22). is the same, and in addition, the chip (2
In order to improve heat dissipation from 1), a recess is provided in the center of the upper surface of the metal substrate (22), and the chip (21) is placed thereon without covering the high melting point glass (23).

A method for manufacturing the semiconductor package shown in FIG. 1a will be described in detail based on FIGS. 2a to 2d.

First, as shown in Figure a, after applying high melting point glass (13) to serve as an insulating layer on the entire surface of a low thermal expansion alloy plate by screen printing or the like, a desired end surface (14) of an external lead (14) is applied.
a) is arranged so that it is exposed from the high melting point glass (13),
These are fired and integrated at a temperature of 700° C. to 1000° C. to form a metal substrate (12).

In addition, before applying the high melting point glass (13), heat treatment is performed on the upper surface of the low thermal expansion alloy plate in advance to form an oxide film.
Alternatively, the surface of the external lead (14) may be similarly subjected to surface treatment such as oxidation treatment to improve its adhesion to the high melting point glass (13).

Figure b shows the process of forming metal thin film wiring made of M or Cu and arranging internal leads (15). Metal substrate (
12) M or Cu is evaporated at a predetermined position on the upper surface of the high melting point glass (13) using a jig or mask material that is etched into a stainless steel plate in a desired pattern, and then the jig or mask material is evaporated. By removing it, a metal thin film wiring having a predetermined shape is formed.

Alternatively, Al may be applied to the entire upper surface of the high melting point glass (13) in advance.
Alternatively, after pasting a Cu thin plate or depositing it by vapor deposition, etc., a mask material made of resin or the like is applied to a predetermined position, and then unnecessary parts of the metal thin film are removed using an etching solution such as acid or alkali. At the same time, the mask material is removed again using an organic solvent to form metal thin film wiring in a predetermined shape.

In either case, when forming the metal thin film wiring, one end of the internal lead (15) is connected to the external lead (14).
).

Next, as shown in Figure 0, the chip (11) is fixed to the center of the upper surface of the metal substrate (12) with brazing material, adhesive, etc., and then the internal leads (15) and the chip (11) are bonded to Al, A, etc.
Connect with a bonding wire (16) such as u.

Further, as shown in Figure d, a metal cap (17) made of a low thermal expansion alloy is integrated with the metal substrate (12) via a low melting point glass (18).

At this time, the metal cap (17) is attached to the chip (11) to be encapsulated.
) is suitably processed into a cup shape, flat plate shape, etc. according to the shape and dimensions of the metal cap (17), and a low melting point glass (18) is applied in advance to a predetermined position of the metal cap (17) by screen printing, electrodeposition, etc. It is desirable that these are placed on a metal substrate (12) and then fired and integrated.

The firing temperature during sealing must be selected according to the low melting point glass (18), etc., and must be within a range that does not adversely affect the chip (11), internal leads (15), etc. (usually 40
0°C to 500°C).

The semiconductor package (30) shown in FIG. 3 has basically the same structure as that shown in FIG. It has a structure in which only the external lead (35) is held between the parts without being held between them, and can be manufactured according to each process shown in FIG.

The semiconductor package (40) shown in FIG. 4 is an example in which lead pins are used for the external leads (44).

In detail, a metal substrate (42) on which a chip (41) is placed
) has a high melting point glass (43) coated as an insulating layer on the upper surface of a low expansion alloy plate as in each of the semiconductor packages described above, and an external lead (44) consisting of a lead pin is, for example, a metal substrate (42). A high melting point glass tube (44a) that ensures insulation with the metal substrate (42) is inserted through the through hole formed in the
), the upper end of the external lead (44) is exposed to protrude from the high melting point glass (43) layer, and a thin film of Al or Cu is similarly formed in the required pattern on the insulating layer. Internal leads (45), which are metal thin film wiring, are stacked and connected. Furthermore, the internal leads (45) are connected to the chip (41) using bonding wires (46).
) is connected.

The metal cap (47) is made of a low thermal expansion alloy.
Chip (41) placed on the metal substrate (42)
), internal leads (45) and bonding wires (46)
) and are sealed to the metal substrate (42) via a low melting point glass (48).

The semiconductor package (40) shown in FIG. 4 uses lead pins for the external leads (44), so the metal substrate (40)
2) It is necessary to form a through hole in advance at a predetermined position and insert the external lead (44) inserted into the high melting point glass tube (44a) into the through hole, but the basic manufacturing method is shown in Figure 2. In each of the steps shown in , the lead frame is only replaced with a lead pin, and the formation of the internal leads (45), wire bonding, integration of the metal cap (47), etc. are all the same as described above.

In particular, the semiconductor package (50) shown in FIG.
This configuration is effective when using u or Cu alloy, or a material whose surface is plated with Cu. After forming a thin film of the internal lead (55) on the top surface of the high melting point glass (53) of the metal substrate (52), It has a structure in which external leads (54) are laminated on the top and integrated by heating and diffusion.

Based on FIG. 6 a-e, the semiconductor package (50
) manufacturing method will be explained in detail.

First, as shown in Figure a, a high melting point glass (53) that will serve as an insulating layer is applied on the top surface of a low expansion alloy plate by screen printing, etc., and then baked at a temperature of 700°C to 1000°C to integrate them. A substrate (52) is formed.

In the configuration shown in Figure 5, there is no need to fix the external lead when firing the high melting point glass (53), so after placing the high melting point glass plate on the low expansion alloy plate, It is also possible to use a method of integrating by heating and pressurizing.
Adhesion can also be improved by interposing an oxide film between the two.

Figure b shows the internal leads (
55) is shown. The method for forming this metal thin film is the same as the method explained with reference to FIG.

Next, as shown in Figure C, an external lead (54) made of Cu, a Cu alloy, or a material whose surface is plated with Cu is placed on the internal lead (55), and then heated and diffused to integrate. When using Cu alloy for the external lead (54), at least 50W is required to obtain the required degree of adhesion.
It is necessary to contain t% of Cu.

In addition, it is desirable that the heating temperature be below the melting temperature of the high-melting point glass, and in order to achieve sufficient diffusion, the heating temperature is usually 530°C to 600°C in an N2 atmosphere, H2 atmosphere, etc.
It is desirable to select within the range of .

Next, as shown in Figure d, the chip (51) is fixed to the center of the upper surface of the metal substrate (52) with brazing material, adhesive, etc., and then the internal leads (55) and the chip (51) are bonded to Al, A, etc.
Connect with a bonding wire (56) such as u.

Further, as shown in Figure e, a metal cap (57) made of a low thermal expansion alloy is integrated with the metal substrate (52) via a low melting point glass (58).

In the steps shown in FIGS. 6d and 6e, it is desirable to consider the sealing temperature, etc., as in the steps shown in FIGS. 2c and d.

Effects of the Invention As shown above, the semiconductor package obtained by the manufacturing method of the present invention has high mechanical strength and extremely low risk of breakage because the substrate or cap is sealed with glass using a low thermal expansion alloy material. Become,
Lighter weight, smaller size, and cheaper to handle.

■Significantly improves heat dissipation compared to conventional packages.

■Enables electromagnetic shielding, reducing the effects of external noise.

■Compared to the conventional structure using only lead frames, the tip part where wire bonding is performed can be formed with high precision.
It can greatly contribute to increasing the number of pins and downsizing.

- Since Al and Cu can be used, it is not only inexpensive without the need for Au plating, but also reduces electrical resistance, allowing for reduced heat generation and high-speed response during use.

Embodiment As an embodiment, the case where the semiconductor package shown in FIG. 1 was created will be described.

42Ni-6C of 30mm x length 30mm x 0.2mm
Low thermal expansion alloy plate made of r-Fe (thermal expansion coefficient: 95~
100xlO'/°C) on the upper surface of the
Cr2O with a film thickness of 1.0-
After forming an oxide film layer mainly composed of 3, PB-based high melting point glass (thermal expansion coefficient: 94xlO-7/"
C) was applied by screen printing and further baked at 800° C. to integrate them to form a metal substrate. The thickness of the high melting point glass after firing was 0.05 mm.

During the above firing, a 0.15 mm thick 4
Lead frame made of 2Ni-Fe (coefficient of thermal expansion: 5
0 x 10'/'C) was integrated into the metal substrate with the top surface exposed.

Next, an Al thin film wiring having a desired shape as an internal lead is formed by vapor deposition using a stainless steel jig as a mask material, and the lead frame is exposed.

connected to the surface. The thickness of the Al thin film at this time was 10 pm.

Thereafter, the chip was fixed to the upper surface of the insulating layer with an adhesive, and the chip and the Al thin film wiring were connected using an Al bonding wire.

The cap is made of a low thermal expansion alloy made of the same material as the metal substrate, and after being heat-treated to form a Cr2O3 film, a Pb-based low melting point glass (thermal expansion coefficient: 80xlO-7) is placed at a predetermined position.
/''C) is applied by screen printing, placed on the metal substrate and baked at 450°C to integrate with the metal substrate, and the Al thin film wiring and lead frame are both sandwiched by the sealing part. did.

When comparing the semiconductor package of the present invention with a conventional semiconductor package whose substrate and cap are both made of plastic as shown in Fig. 7, it was confirmed that the heat dissipation performance of the semiconductor package of the present invention was improved by about 35 to 50%. It was done.

We also confirmed that the electromagnetic shielding effect reduces the effects of external noise.

0.15mm 29Ni-16Co- as an external lead
Lead frame made of Fe (coefficient of thermal expansion: 50xlO
A semiconductor package shown in FIG. 5 was prepared using a Cu-plated lead frame having a thickness of 3.5 pm.

Low thermal expansion alloy plate constituting the metal substrate, material of high melting point glass, coating method, method for manufacturing internal leads made of Al metal thin film, material of low thermal expansion alloy constituting the metal cap, material of low melting point glass, firing method, etc. Both were the same as in Example 1.

However, the above Cu-plated lead frame was placed on one end of the Al metal thin film wiring and heated to 550°C in an N2 atmosphere.
They were integrated by heating.

The obtained semiconductor package also exhibited the same effects as in Example 1.

[Brief explanation of the drawing]

1a and 1b, FIG. 3, FIG. 4, and FIG. 5 are longitudinal sectional views showing one embodiment of a semiconductor package manufactured by the method of the present invention. FIGS. 2a-d and 6a-e are partial longitudinal sectional views of a semiconductor package showing an embodiment of the manufacturing process of the present invention. FIG. 7 is an explanatory longitudinal cross-sectional view of a conventional plastic package. 1G, 20, 30, 40, 50... semiconductor package, 11. 21, 31, 41, 51... chip, 12.
22, 32, 42, 52...metal substrate, 13.23,
33,43,53...High melting point glass, 14.24,3
4,44,54...external lead, 15.25,35,
45, 55...internal lead, 16.26, 36, 46
．． 56...Bonding wire, 17.27.37,
47.57...metal cap, 18.28,38,4
8,58...Low melting point glass.

Claims (1)

[Claims] 1. A method for manufacturing a semiconductor package in which a semiconductor chip is placed on the top surface of a substrate, internal leads and external leads are arranged, and the semiconductor package is sealed with a cap, comprising the steps of: sealing at least the surface of a low thermal expansion alloy plate serving as a metal substrate; wearing part,
After applying high melting point glass to the parts where the inner and outer lead members are arranged, when firing it to form a metal substrate, the end surfaces of the outer leads are exposed from the high melting point glass when the high melting point glass is fired. A thin metal film made of Al or Cu, which will become an internal lead, is attached to the upper surface of the metal substrate by connecting it to the exposed portion of the external lead member, and a semiconductor chip is fixed to the surface of the metal substrate. A method for manufacturing a semiconductor package, characterized in that the chip and internal leads are wire-bonded, and at least a cap enclosing the semiconductor chip is integrated with the metal substrate via a low-melting glass. 2. In a method for manufacturing a semiconductor package in which a semiconductor chip is placed on the top surface of a substrate, internal leads and external leads are arranged, and sealed with a cap, at least the sealed portion of the surface of the low thermal expansion alloy plate serving as the metal substrate,
After applying high melting point glass to serve as an insulating layer to the arrangement portion of the inner lead member, it is fired to form a metal substrate, and a thin metal film made of Al that will become the inner lead is deposited on the top surface of the metal substrate, and the inner lead is One end of an external lead member made of Cu or Cu alloy or whose surface is plated with Cu is placed on one end, and then heated, diffused and fixed, and a semiconductor chip is fixed on the metal substrate surface, and the chip and internal leads are bonded together. A method of manufacturing a semiconductor package, comprising: performing wire bonding to integrate at least a cap enclosing the semiconductor chip with the metal substrate via a low melting point glass.