JPS648718A - Semiconductor element driving circuit arrangement - Google Patents
Semiconductor element driving circuit arrangementInfo
- Publication number
- JPS648718A JPS648718A JP63138569A JP13856988A JPS648718A JP S648718 A JPS648718 A JP S648718A JP 63138569 A JP63138569 A JP 63138569A JP 13856988 A JP13856988 A JP 13856988A JP S648718 A JPS648718 A JP S648718A
- Authority
- JP
- Japan
- Prior art keywords
- voltage
- circuit
- conductive
- output
- fet
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
- H03K17/082—Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit
- H03K17/0822—Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit in field-effect transistor switches
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/04—Modifications for accelerating switching
- H03K17/041—Modifications for accelerating switching without feedback from the output circuit to the control circuit
- H03K17/0412—Modifications for accelerating switching without feedback from the output circuit to the control circuit by measures taken in the control circuit
- H03K17/04123—Modifications for accelerating switching without feedback from the output circuit to the control circuit by measures taken in the control circuit in field-effect transistor switches
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K2217/00—Indexing scheme related to electronic switching or gating, i.e. not by contact-making or -breaking covered by H03K17/00
- H03K2217/0036—Means reducing energy consumption
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB8713384 | 1987-06-08 | ||
GB878713384A GB8713384D0 (en) | 1987-06-08 | 1987-06-08 | Driving semiconductor device |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS648718A true JPS648718A (en) | 1989-01-12 |
JP2726433B2 JP2726433B2 (ja) | 1998-03-11 |
Family
ID=10618563
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP63138569A Expired - Lifetime JP2726433B2 (ja) | 1987-06-08 | 1988-06-07 | 半導体素子駆動用回路配置 |
Country Status (6)
Country | Link |
---|---|
US (1) | US4890020A (ja) |
EP (1) | EP0294887B1 (ja) |
JP (1) | JP2726433B2 (ja) |
KR (1) | KR0135532B1 (ja) |
DE (1) | DE3886823T2 (ja) |
GB (2) | GB8713384D0 (ja) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH02194725A (ja) * | 1989-01-24 | 1990-08-01 | Fuji Electric Co Ltd | 過電圧保護回路を備えたスイッチ回路 |
JP2008022698A (ja) * | 2006-07-12 | 2008-01-31 | Power Integrations Inc | 高電圧電源回路の方法および装置 |
JP2009147995A (ja) * | 2007-12-11 | 2009-07-02 | Nec Electronics Corp | 電力供給制御回路 |
Families Citing this family (22)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4808839A (en) * | 1988-04-04 | 1989-02-28 | Motorola, Inc. | Power field effect transistor driver circuit for protection from overvoltages |
US5034875A (en) * | 1989-01-11 | 1991-07-23 | Nec Corporation | Voltage multiplier circuit |
IT1240906B (it) * | 1990-03-19 | 1993-12-20 | Seit Elettronica Srl | Circuito di pilotaggio velocissimo per mosfet |
US5103148A (en) * | 1990-11-06 | 1992-04-07 | Motorola, Inc. | Low voltage circuit to control high voltage transistor |
US5309309A (en) * | 1991-08-15 | 1994-05-03 | Ford Motor Company | Semiconductor protection against high energy transients |
JP2837054B2 (ja) * | 1992-09-04 | 1998-12-14 | 三菱電機株式会社 | 絶縁ゲート型半導体装置 |
US5525925A (en) * | 1992-09-25 | 1996-06-11 | Texas Instruments Incorporated | Simple power MOSFET low side driver switch-off circuit with limited di/dt and fast response |
US5418673A (en) * | 1992-12-14 | 1995-05-23 | North American Philips Corporation | Control electrode disable circuit for power transistor |
EP0627807B1 (en) * | 1993-05-27 | 1998-08-12 | Fujitsu Limited | Power line connection circuit and power line switch IC for the same |
DE4432520C1 (de) * | 1994-09-13 | 1996-02-22 | Bosch Gmbh Robert | Elektronische Schutzschaltung gegen Überspannungen an Leistungsschaltelementen |
US5537077A (en) * | 1994-12-23 | 1996-07-16 | Advanced Micro Devices, Inc. | Power supply dependent method of controlling a charge pump |
US5552746A (en) * | 1995-04-07 | 1996-09-03 | Sgs-Thomson Microelectronics, Inc. | Gate drive circuit |
EP0766394B1 (de) * | 1995-09-27 | 2002-03-20 | Infineon Technologies AG | Schaltungsanordnung zum Ansteuern eines Leistungs-Enhancement-MOSFET |
US5774000A (en) * | 1996-11-08 | 1998-06-30 | Northrop Grumman Corporation | DC semiconductor switch |
DE19742019C2 (de) * | 1997-09-24 | 2002-04-18 | Alcatel Sa | Verfahren und Schaltungsanordnung zur Begrenzung von Schaltüberspannungen an Leistungshalbleiterschaltern |
EP0949736B1 (en) * | 1998-04-10 | 2004-03-17 | STMicroelectronics S.r.l. | Electronic bridge and half-bridge circuits with suppression of high-voltage transients on the power supply line |
US6975493B2 (en) * | 2003-01-31 | 2005-12-13 | Delphi Technologies, Inc. | Overvoltage transient protection for low side circuits |
DE50303676D1 (de) * | 2003-04-02 | 2006-07-20 | Catem Gmbh & Co Kg | Kraftfahrzeugsitz und Gebläsemodul für einen solchen Kraftfahrzeugsitz |
US7139157B2 (en) * | 2004-07-30 | 2006-11-21 | Kyocera Wireless Corp. | System and method for protecting a load from a voltage source |
US7869176B2 (en) * | 2007-03-30 | 2011-01-11 | Hamilton Sundstrand Corporation | Surge protected power supply |
CN109245052B (zh) * | 2018-08-29 | 2024-04-12 | 广州金升阳科技有限公司 | 一种短路保护电路和包含该电路的开关电源 |
JP2021034838A (ja) * | 2019-08-22 | 2021-03-01 | 株式会社オートネットワーク技術研究所 | 出力装置 |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61131141U (ja) * | 1985-02-04 | 1986-08-16 |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE2638178C2 (de) * | 1976-08-25 | 1986-01-02 | Robert Bosch Gmbh, 7000 Stuttgart | Schutzvorrichtung für integrierte Schaltungen gegen Überspannungen |
DE3018501A1 (de) * | 1980-05-14 | 1981-11-19 | Siemens AG, 1000 Berlin und 8000 München | Schalter mit einem als source-folger betriebenen mis-pet |
EP0053709B1 (de) * | 1980-12-04 | 1985-03-06 | Siemens Aktiengesellschaft | Schaltungsanordnung zum Ansteuern mindestens eines Leistungs-FET |
JPS5856286B2 (ja) * | 1980-12-25 | 1983-12-14 | 富士通株式会社 | 出力バッファ回路 |
US4491744A (en) * | 1982-08-02 | 1985-01-01 | Burroughs Corporation | Current source direct base drive for transistor power switches |
US4573099A (en) * | 1984-06-29 | 1986-02-25 | At&T Bell Laboratories | CMOS Circuit overvoltage protection |
JPH0681037B2 (ja) * | 1984-08-29 | 1994-10-12 | 富士通株式会社 | 保護回路付ttl回路 |
EP0201878A3 (de) * | 1985-05-10 | 1987-04-15 | Siemens Aktiengesellschaft | Schaltungsanordnung mit einem p-schaltenden n-Kanal MOS-Transistor |
US4691129A (en) * | 1986-03-19 | 1987-09-01 | Siemens Aktiengesellschaft | Drive circuit for a power MOSFET with source-side load |
-
1987
- 1987-06-08 GB GB878713384A patent/GB8713384D0/en active Pending
-
1988
- 1988-05-27 US US07/231,911 patent/US4890020A/en not_active Expired - Lifetime
- 1988-06-01 GB GB08812959A patent/GB2206255A/en not_active Withdrawn
- 1988-06-03 KR KR1019880006672A patent/KR0135532B1/ko not_active IP Right Cessation
- 1988-06-06 DE DE3886823T patent/DE3886823T2/de not_active Expired - Lifetime
- 1988-06-06 EP EP88201142A patent/EP0294887B1/en not_active Expired - Lifetime
- 1988-06-07 JP JP63138569A patent/JP2726433B2/ja not_active Expired - Lifetime
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61131141U (ja) * | 1985-02-04 | 1986-08-16 |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH02194725A (ja) * | 1989-01-24 | 1990-08-01 | Fuji Electric Co Ltd | 過電圧保護回路を備えたスイッチ回路 |
JP2008022698A (ja) * | 2006-07-12 | 2008-01-31 | Power Integrations Inc | 高電圧電源回路の方法および装置 |
JP2009147995A (ja) * | 2007-12-11 | 2009-07-02 | Nec Electronics Corp | 電力供給制御回路 |
Also Published As
Publication number | Publication date |
---|---|
KR890001273A (ko) | 1989-03-20 |
DE3886823T2 (de) | 1994-07-07 |
KR0135532B1 (ko) | 1998-05-15 |
EP0294887A3 (en) | 1990-01-24 |
GB2206255A (en) | 1988-12-29 |
EP0294887A2 (en) | 1988-12-14 |
EP0294887B1 (en) | 1994-01-05 |
GB8713384D0 (en) | 1987-07-15 |
GB8812959D0 (en) | 1988-07-06 |
US4890020A (en) | 1989-12-26 |
DE3886823D1 (de) | 1994-02-17 |
JP2726433B2 (ja) | 1998-03-11 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JPS648718A (en) | Semiconductor element driving circuit arrangement | |
US6970336B2 (en) | Electrostatic discharge protection circuit and method of operation | |
KR101109283B1 (ko) | 개선된 성능을 가진 n?채널 esd 클램프 | |
US4390790A (en) | Solid state optically coupled electrical power switch | |
JPS6471217A (en) | Output buffer circuit | |
US4443715A (en) | Driver circuit | |
EP0506288A2 (en) | Solid-state relay | |
KR960005986A (ko) | 반도체 집적회로장치 | |
EP0130273A2 (en) | FET driver circuit | |
US9669427B2 (en) | Methods and systems for ultrasound control with bi-directional transistor | |
JP2796833B2 (ja) | 出力段の電流を防止するフィードバックを有する高速論理回路 | |
KR910010723A (ko) | 소메모리셀 면적에서 고안정성을 갖는 반도체기억장치 | |
KR950012707A (ko) | 반도체 장치 | |
US10312230B2 (en) | ESD protection circuit having clamp control loop | |
GB2384632A (en) | A power MOSFET with integrated short-circuit protection | |
US6191633B1 (en) | Semiconductor integrated circuit with protection circuit against electrostatic discharge | |
JPS6471218A (en) | Input buffer circuit and input level shift circuit | |
US5159515A (en) | Protection circuit for power FETs in a half-bridge circuit | |
JPH03141720A (ja) | パワースイッチ回路 | |
KR910001775A (ko) | 반도체 기억장치 | |
CN113098462A (zh) | 一种快速上下电电路及其控制方法 | |
JPS55165682A (en) | Mos field effect semiconductor device | |
US6459300B1 (en) | Level-shifting circuitry having “high” output during disable mode | |
CN213243522U (zh) | 一种钳位保护电路、igbt驱动子电路及电力电子设备 | |
Williams et al. | Single package 30-V battery disconnect switch facilitates battery multiplexing in notebook computers |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
S111 | Request for change of ownership or part of ownership |
Free format text: JAPANESE INTERMEDIATE CODE: R313113 |
|
R371 | Transfer withdrawn |
Free format text: JAPANESE INTERMEDIATE CODE: R371 |
|
S111 | Request for change of ownership or part of ownership |
Free format text: JAPANESE INTERMEDIATE CODE: R313113 |
|
R350 | Written notification of registration of transfer |
Free format text: JAPANESE INTERMEDIATE CODE: R350 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20071205 Year of fee payment: 10 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20081205 Year of fee payment: 11 |
|
EXPY | Cancellation because of completion of term | ||
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20081205 Year of fee payment: 11 |