JPS648718A - Semiconductor element driving circuit arrangement - Google Patents

Semiconductor element driving circuit arrangement

Info

Publication number
JPS648718A
JPS648718A JP63138569A JP13856988A JPS648718A JP S648718 A JPS648718 A JP S648718A JP 63138569 A JP63138569 A JP 63138569A JP 13856988 A JP13856988 A JP 13856988A JP S648718 A JPS648718 A JP S648718A
Authority
JP
Japan
Prior art keywords
voltage
circuit
conductive
output
fet
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP63138569A
Other languages
English (en)
Other versions
JP2726433B2 (ja
Inventor
Haabuei Baado Fuiritsupu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Philips Gloeilampenfabrieken NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Gloeilampenfabrieken NV filed Critical Philips Gloeilampenfabrieken NV
Publication of JPS648718A publication Critical patent/JPS648718A/ja
Application granted granted Critical
Publication of JP2726433B2 publication Critical patent/JP2726433B2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K17/00Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/08Modifications for protecting switching circuit against overcurrent or overvoltage
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K17/00Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/08Modifications for protecting switching circuit against overcurrent or overvoltage
    • H03K17/082Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit
    • H03K17/0822Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit in field-effect transistor switches
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K17/00Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/04Modifications for accelerating switching
    • H03K17/041Modifications for accelerating switching without feedback from the output circuit to the control circuit
    • H03K17/0412Modifications for accelerating switching without feedback from the output circuit to the control circuit by measures taken in the control circuit
    • H03K17/04123Modifications for accelerating switching without feedback from the output circuit to the control circuit by measures taken in the control circuit in field-effect transistor switches
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K2217/00Indexing scheme related to electronic switching or gating, i.e. not by contact-making or -breaking covered by H03K17/00
    • H03K2217/0036Means reducing energy consumption
JP63138569A 1987-06-08 1988-06-07 半導体素子駆動用回路配置 Expired - Lifetime JP2726433B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
GB8713384 1987-06-08
GB878713384A GB8713384D0 (en) 1987-06-08 1987-06-08 Driving semiconductor device

Publications (2)

Publication Number Publication Date
JPS648718A true JPS648718A (en) 1989-01-12
JP2726433B2 JP2726433B2 (ja) 1998-03-11

Family

ID=10618563

Family Applications (1)

Application Number Title Priority Date Filing Date
JP63138569A Expired - Lifetime JP2726433B2 (ja) 1987-06-08 1988-06-07 半導体素子駆動用回路配置

Country Status (6)

Country Link
US (1) US4890020A (ja)
EP (1) EP0294887B1 (ja)
JP (1) JP2726433B2 (ja)
KR (1) KR0135532B1 (ja)
DE (1) DE3886823T2 (ja)
GB (2) GB8713384D0 (ja)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02194725A (ja) * 1989-01-24 1990-08-01 Fuji Electric Co Ltd 過電圧保護回路を備えたスイッチ回路
JP2008022698A (ja) * 2006-07-12 2008-01-31 Power Integrations Inc 高電圧電源回路の方法および装置
JP2009147995A (ja) * 2007-12-11 2009-07-02 Nec Electronics Corp 電力供給制御回路

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4808839A (en) * 1988-04-04 1989-02-28 Motorola, Inc. Power field effect transistor driver circuit for protection from overvoltages
US5034875A (en) * 1989-01-11 1991-07-23 Nec Corporation Voltage multiplier circuit
IT1240906B (it) * 1990-03-19 1993-12-20 Seit Elettronica Srl Circuito di pilotaggio velocissimo per mosfet
US5103148A (en) * 1990-11-06 1992-04-07 Motorola, Inc. Low voltage circuit to control high voltage transistor
US5309309A (en) * 1991-08-15 1994-05-03 Ford Motor Company Semiconductor protection against high energy transients
JP2837054B2 (ja) * 1992-09-04 1998-12-14 三菱電機株式会社 絶縁ゲート型半導体装置
US5525925A (en) * 1992-09-25 1996-06-11 Texas Instruments Incorporated Simple power MOSFET low side driver switch-off circuit with limited di/dt and fast response
US5418673A (en) * 1992-12-14 1995-05-23 North American Philips Corporation Control electrode disable circuit for power transistor
EP0627807B1 (en) * 1993-05-27 1998-08-12 Fujitsu Limited Power line connection circuit and power line switch IC for the same
DE4432520C1 (de) * 1994-09-13 1996-02-22 Bosch Gmbh Robert Elektronische Schutzschaltung gegen Überspannungen an Leistungsschaltelementen
US5537077A (en) * 1994-12-23 1996-07-16 Advanced Micro Devices, Inc. Power supply dependent method of controlling a charge pump
US5552746A (en) * 1995-04-07 1996-09-03 Sgs-Thomson Microelectronics, Inc. Gate drive circuit
EP0766394B1 (de) * 1995-09-27 2002-03-20 Infineon Technologies AG Schaltungsanordnung zum Ansteuern eines Leistungs-Enhancement-MOSFET
US5774000A (en) * 1996-11-08 1998-06-30 Northrop Grumman Corporation DC semiconductor switch
DE19742019C2 (de) * 1997-09-24 2002-04-18 Alcatel Sa Verfahren und Schaltungsanordnung zur Begrenzung von Schaltüberspannungen an Leistungshalbleiterschaltern
EP0949736B1 (en) * 1998-04-10 2004-03-17 STMicroelectronics S.r.l. Electronic bridge and half-bridge circuits with suppression of high-voltage transients on the power supply line
US6975493B2 (en) * 2003-01-31 2005-12-13 Delphi Technologies, Inc. Overvoltage transient protection for low side circuits
DE50303676D1 (de) * 2003-04-02 2006-07-20 Catem Gmbh & Co Kg Kraftfahrzeugsitz und Gebläsemodul für einen solchen Kraftfahrzeugsitz
US7139157B2 (en) * 2004-07-30 2006-11-21 Kyocera Wireless Corp. System and method for protecting a load from a voltage source
US7869176B2 (en) * 2007-03-30 2011-01-11 Hamilton Sundstrand Corporation Surge protected power supply
CN109245052B (zh) * 2018-08-29 2024-04-12 广州金升阳科技有限公司 一种短路保护电路和包含该电路的开关电源
JP2021034838A (ja) * 2019-08-22 2021-03-01 株式会社オートネットワーク技術研究所 出力装置

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61131141U (ja) * 1985-02-04 1986-08-16

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2638178C2 (de) * 1976-08-25 1986-01-02 Robert Bosch Gmbh, 7000 Stuttgart Schutzvorrichtung für integrierte Schaltungen gegen Überspannungen
DE3018501A1 (de) * 1980-05-14 1981-11-19 Siemens AG, 1000 Berlin und 8000 München Schalter mit einem als source-folger betriebenen mis-pet
EP0053709B1 (de) * 1980-12-04 1985-03-06 Siemens Aktiengesellschaft Schaltungsanordnung zum Ansteuern mindestens eines Leistungs-FET
JPS5856286B2 (ja) * 1980-12-25 1983-12-14 富士通株式会社 出力バッファ回路
US4491744A (en) * 1982-08-02 1985-01-01 Burroughs Corporation Current source direct base drive for transistor power switches
US4573099A (en) * 1984-06-29 1986-02-25 At&T Bell Laboratories CMOS Circuit overvoltage protection
JPH0681037B2 (ja) * 1984-08-29 1994-10-12 富士通株式会社 保護回路付ttl回路
EP0201878A3 (de) * 1985-05-10 1987-04-15 Siemens Aktiengesellschaft Schaltungsanordnung mit einem p-schaltenden n-Kanal MOS-Transistor
US4691129A (en) * 1986-03-19 1987-09-01 Siemens Aktiengesellschaft Drive circuit for a power MOSFET with source-side load

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61131141U (ja) * 1985-02-04 1986-08-16

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02194725A (ja) * 1989-01-24 1990-08-01 Fuji Electric Co Ltd 過電圧保護回路を備えたスイッチ回路
JP2008022698A (ja) * 2006-07-12 2008-01-31 Power Integrations Inc 高電圧電源回路の方法および装置
JP2009147995A (ja) * 2007-12-11 2009-07-02 Nec Electronics Corp 電力供給制御回路

Also Published As

Publication number Publication date
KR890001273A (ko) 1989-03-20
DE3886823T2 (de) 1994-07-07
KR0135532B1 (ko) 1998-05-15
EP0294887A3 (en) 1990-01-24
GB2206255A (en) 1988-12-29
EP0294887A2 (en) 1988-12-14
EP0294887B1 (en) 1994-01-05
GB8713384D0 (en) 1987-07-15
GB8812959D0 (en) 1988-07-06
US4890020A (en) 1989-12-26
DE3886823D1 (de) 1994-02-17
JP2726433B2 (ja) 1998-03-11

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