JPS6486428A - Electron emission element and manufacture thereof - Google Patents

Electron emission element and manufacture thereof

Info

Publication number
JPS6486428A
JPS6486428A JP2487387A JP2487387A JPS6486428A JP S6486428 A JPS6486428 A JP S6486428A JP 2487387 A JP2487387 A JP 2487387A JP 2487387 A JP2487387 A JP 2487387A JP S6486428 A JPS6486428 A JP S6486428A
Authority
JP
Japan
Prior art keywords
electrode
resist
recess
metal layer
electron emission
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2487387A
Other languages
Japanese (ja)
Other versions
JP2612565B2 (en
Inventor
Akira Suzuki
Isamu Shimoda
Tetsuya Kaneko
Takeo Tsukamoto
Toshihiko Takeda
Takao Yonehara
Masahiko Okunuki
Takeshi Ichikawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Priority to JP2487387A priority Critical patent/JP2612565B2/en
Priority to DE19883855482 priority patent/DE3855482T2/en
Priority to EP96100917A priority patent/EP0713241B1/en
Priority to DE19883856492 priority patent/DE3856492T2/en
Priority to EP19880101626 priority patent/EP0278405B1/en
Priority to AU11343/88A priority patent/AU1134388A/en
Publication of JPS6486428A publication Critical patent/JPS6486428A/en
Priority to US07/746,154 priority patent/US5176557A/en
Priority to AU87749/91A priority patent/AU631327B2/en
Priority to US07/848,727 priority patent/US5201681A/en
Priority to US08/011,006 priority patent/US5361015A/en
Application granted granted Critical
Publication of JP2612565B2 publication Critical patent/JP2612565B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Landscapes

  • Cold Cathode And The Manufacture (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

PURPOSE:To keep off any form variations in an electrode and simultaneously aim at improvement in the performance by manufacturing the electrode, with a pointed part, installed on a sedimentary surface with a monocrystal. CONSTITUTION:An oxidation substrate 1 of SiO2 or the like is processed by means of photoetching or the like, forming a recess 2 and, centering on a single nucleus formed with a nucleus formation base 3 of Si, Si3N4 or the like, a monocrystal of Mo, W, Si or the like is made to grow up, and an electrode 4 of a rotator in the desired size with a conical pointed part is formed on a bottom surface of the recess 2 turning to a sedimentary surface. Next, the recess 2 is filled up with a resist, a metal layer 5 of Mo or the like is formed on this resist and the oxidation substrate 1, a photoresist 6 is applied thereon, and exposed to light, whereby an opening 7 is formed. An opening is made in the metal layer 5 by etching, and the metal layer 5 or a drawer electrode is formed, and afterward the resist is removed, thus an electron emission element is manufactured in this way.
JP2487387A 1987-02-06 1987-02-06 Electron emitting device and method of manufacturing the same Expired - Lifetime JP2612565B2 (en)

Priority Applications (10)

Application Number Priority Date Filing Date Title
JP2487387A JP2612565B2 (en) 1987-02-06 1987-02-06 Electron emitting device and method of manufacturing the same
DE19883855482 DE3855482T2 (en) 1987-02-06 1988-02-04 Electron emitting element and its manufacturing process
EP96100917A EP0713241B1 (en) 1987-02-06 1988-02-04 A display device comprising an electron emission element
DE19883856492 DE3856492T2 (en) 1987-02-06 1988-02-04 A display device containing an electron emission element
EP19880101626 EP0278405B1 (en) 1987-02-06 1988-02-04 Electron emission element and method of manufacturing the same
AU11343/88A AU1134388A (en) 1987-02-06 1988-02-05 Electron emission element and method of manufacturing the same
US07/746,154 US5176557A (en) 1987-02-06 1991-08-14 Electron emission element and method of manufacturing the same
AU87749/91A AU631327B2 (en) 1987-02-06 1991-11-11 Electron emission element and method of manufacturing the same
US07/848,727 US5201681A (en) 1987-02-06 1992-03-09 Method of emitting electrons
US08/011,006 US5361015A (en) 1987-02-06 1993-01-29 Electron emission element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2487387A JP2612565B2 (en) 1987-02-06 1987-02-06 Electron emitting device and method of manufacturing the same

Publications (2)

Publication Number Publication Date
JPS6486428A true JPS6486428A (en) 1989-03-31
JP2612565B2 JP2612565B2 (en) 1997-05-21

Family

ID=12150323

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2487387A Expired - Lifetime JP2612565B2 (en) 1987-02-06 1987-02-06 Electron emitting device and method of manufacturing the same

Country Status (1)

Country Link
JP (1) JP2612565B2 (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04506280A (en) * 1990-02-09 1992-10-29 モトローラ・インコーポレイテッド Nonplanar field emission device with emitter formed using a substantially vertical deposition method
JP2005276951A (en) * 2004-03-23 2005-10-06 Univ Meijo Heteroepitaxial growth method and crystal thin film

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4960169A (en) * 1972-10-09 1974-06-11
JPS5166767A (en) * 1974-12-06 1976-06-09 Hitachi Ltd

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4960169A (en) * 1972-10-09 1974-06-11
JPS5166767A (en) * 1974-12-06 1976-06-09 Hitachi Ltd

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04506280A (en) * 1990-02-09 1992-10-29 モトローラ・インコーポレイテッド Nonplanar field emission device with emitter formed using a substantially vertical deposition method
JP2005276951A (en) * 2004-03-23 2005-10-06 Univ Meijo Heteroepitaxial growth method and crystal thin film

Also Published As

Publication number Publication date
JP2612565B2 (en) 1997-05-21

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Legal Events

Date Code Title Description
EXPY Cancellation because of completion of term