JPS6486428A - Electron emission element and manufacture thereof - Google Patents
Electron emission element and manufacture thereofInfo
- Publication number
- JPS6486428A JPS6486428A JP2487387A JP2487387A JPS6486428A JP S6486428 A JPS6486428 A JP S6486428A JP 2487387 A JP2487387 A JP 2487387A JP 2487387 A JP2487387 A JP 2487387A JP S6486428 A JPS6486428 A JP S6486428A
- Authority
- JP
- Japan
- Prior art keywords
- electrode
- resist
- recess
- metal layer
- electron emission
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Cold Cathode And The Manufacture (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
PURPOSE:To keep off any form variations in an electrode and simultaneously aim at improvement in the performance by manufacturing the electrode, with a pointed part, installed on a sedimentary surface with a monocrystal. CONSTITUTION:An oxidation substrate 1 of SiO2 or the like is processed by means of photoetching or the like, forming a recess 2 and, centering on a single nucleus formed with a nucleus formation base 3 of Si, Si3N4 or the like, a monocrystal of Mo, W, Si or the like is made to grow up, and an electrode 4 of a rotator in the desired size with a conical pointed part is formed on a bottom surface of the recess 2 turning to a sedimentary surface. Next, the recess 2 is filled up with a resist, a metal layer 5 of Mo or the like is formed on this resist and the oxidation substrate 1, a photoresist 6 is applied thereon, and exposed to light, whereby an opening 7 is formed. An opening is made in the metal layer 5 by etching, and the metal layer 5 or a drawer electrode is formed, and afterward the resist is removed, thus an electron emission element is manufactured in this way.
Priority Applications (10)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2487387A JP2612565B2 (en) | 1987-02-06 | 1987-02-06 | Electron emitting device and method of manufacturing the same |
DE19883855482 DE3855482T2 (en) | 1987-02-06 | 1988-02-04 | Electron emitting element and its manufacturing process |
EP96100917A EP0713241B1 (en) | 1987-02-06 | 1988-02-04 | A display device comprising an electron emission element |
DE19883856492 DE3856492T2 (en) | 1987-02-06 | 1988-02-04 | A display device containing an electron emission element |
EP19880101626 EP0278405B1 (en) | 1987-02-06 | 1988-02-04 | Electron emission element and method of manufacturing the same |
AU11343/88A AU1134388A (en) | 1987-02-06 | 1988-02-05 | Electron emission element and method of manufacturing the same |
US07/746,154 US5176557A (en) | 1987-02-06 | 1991-08-14 | Electron emission element and method of manufacturing the same |
AU87749/91A AU631327B2 (en) | 1987-02-06 | 1991-11-11 | Electron emission element and method of manufacturing the same |
US07/848,727 US5201681A (en) | 1987-02-06 | 1992-03-09 | Method of emitting electrons |
US08/011,006 US5361015A (en) | 1987-02-06 | 1993-01-29 | Electron emission element |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2487387A JP2612565B2 (en) | 1987-02-06 | 1987-02-06 | Electron emitting device and method of manufacturing the same |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS6486428A true JPS6486428A (en) | 1989-03-31 |
JP2612565B2 JP2612565B2 (en) | 1997-05-21 |
Family
ID=12150323
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2487387A Expired - Lifetime JP2612565B2 (en) | 1987-02-06 | 1987-02-06 | Electron emitting device and method of manufacturing the same |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP2612565B2 (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH04506280A (en) * | 1990-02-09 | 1992-10-29 | モトローラ・インコーポレイテッド | Nonplanar field emission device with emitter formed using a substantially vertical deposition method |
JP2005276951A (en) * | 2004-03-23 | 2005-10-06 | Univ Meijo | Heteroepitaxial growth method and crystal thin film |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS4960169A (en) * | 1972-10-09 | 1974-06-11 | ||
JPS5166767A (en) * | 1974-12-06 | 1976-06-09 | Hitachi Ltd |
-
1987
- 1987-02-06 JP JP2487387A patent/JP2612565B2/en not_active Expired - Lifetime
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS4960169A (en) * | 1972-10-09 | 1974-06-11 | ||
JPS5166767A (en) * | 1974-12-06 | 1976-06-09 | Hitachi Ltd |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH04506280A (en) * | 1990-02-09 | 1992-10-29 | モトローラ・インコーポレイテッド | Nonplanar field emission device with emitter formed using a substantially vertical deposition method |
JP2005276951A (en) * | 2004-03-23 | 2005-10-06 | Univ Meijo | Heteroepitaxial growth method and crystal thin film |
Also Published As
Publication number | Publication date |
---|---|
JP2612565B2 (en) | 1997-05-21 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
EXPY | Cancellation because of completion of term |