JPS6471169A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS6471169A JPS6471169A JP22642587A JP22642587A JPS6471169A JP S6471169 A JPS6471169 A JP S6471169A JP 22642587 A JP22642587 A JP 22642587A JP 22642587 A JP22642587 A JP 22642587A JP S6471169 A JPS6471169 A JP S6471169A
- Authority
- JP
- Japan
- Prior art keywords
- film
- deposited
- opening part
- heat treatment
- mos transistor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Bipolar Transistors (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Abstract
PURPOSE:To manufacture a MOS transistor gate with a fine width by forming the MOS transistor with a submicron width on a substrate in a self-alignment manner. CONSTITUTION:An unsingle crystal silicon film 13 is deposited on a substrate 11, which film 13 is then doped into a conductivity type opposite to a minus one. A silicon dioxide film 14a is deposited on the film 13. The films 13, 14a are patterned together with formation of a window therethrough, on which a silicon dioxide film 14b is deposited. An impurity diffusion layer 15 and an external base 18b are formed by a heat treatment, and the film 14b is left behind on the sidewall of the film 13. An oxide film 16 is formed over the opening part, and an internal base 18a is formed by impurity diffusion and a heat treatment. An unsingle crystal silicon film 17 is deposited on the entire surface of the resulting product followed by emitter diffusion, and only the opening part is patterned with the film 17 being left behind. An insulating film 20 is deposited over the entire surface of the resulting product, and the film 20 is opened at the opening part. The portion so opened allows electrodes 21, 22, 25, 26, 27 to be formed thereon.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP22642587A JPS6471169A (en) | 1987-09-11 | 1987-09-11 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP22642587A JPS6471169A (en) | 1987-09-11 | 1987-09-11 | Manufacture of semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6471169A true JPS6471169A (en) | 1989-03-16 |
Family
ID=16844922
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP22642587A Pending JPS6471169A (en) | 1987-09-11 | 1987-09-11 | Manufacture of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6471169A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6799954B2 (en) | 2001-09-27 | 2004-10-05 | Mitsubishi Denki Kabushiki Kaisha | Tappet turning-prevention structure for fuel supply apparatus |
| JP2008208713A (en) * | 2007-02-23 | 2008-09-11 | Toyota Motor Corp | Fuel jet pump |
| WO2011155050A1 (en) * | 2010-06-11 | 2011-12-15 | ボッシュ株式会社 | Fuel supply pump |
-
1987
- 1987-09-11 JP JP22642587A patent/JPS6471169A/en active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6799954B2 (en) | 2001-09-27 | 2004-10-05 | Mitsubishi Denki Kabushiki Kaisha | Tappet turning-prevention structure for fuel supply apparatus |
| JP2008208713A (en) * | 2007-02-23 | 2008-09-11 | Toyota Motor Corp | Fuel jet pump |
| WO2011155050A1 (en) * | 2010-06-11 | 2011-12-15 | ボッシュ株式会社 | Fuel supply pump |
| JP5390705B2 (en) * | 2010-06-11 | 2014-01-15 | ボッシュ株式会社 | Fuel supply pump |
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