JPS6481368A - Nonvolatile semiconductor device - Google Patents
Nonvolatile semiconductor deviceInfo
- Publication number
- JPS6481368A JPS6481368A JP23724687A JP23724687A JPS6481368A JP S6481368 A JPS6481368 A JP S6481368A JP 23724687 A JP23724687 A JP 23724687A JP 23724687 A JP23724687 A JP 23724687A JP S6481368 A JPS6481368 A JP S6481368A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- groove
- oxide film
- partly
- film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Non-Volatile Memory (AREA)
Abstract
PURPOSE:To inject high charge into a floating gate and to providing a high erasing efficiency even if a thin film forming area is reduced or increased in thickness by forming the local thin film of a first gate oxide film on the inner wall of a groove having a sharp edge formed in a diffused layer, and partly burying it in the groove to form the floating gate. CONSTITUTION:A first N-type diffused layer 23 is formed partly in the surface of a substrate 21 of an active region, and a silicon oxide film 24 is formed by thermally oxidizing on the whole surface of the substrate 21 of the active region including the surface of the layer 23. Then, part of the layer 12 is etched through an opening 25 formed at the film 24, and a groove 26 having a sharp edge is formed in the layer 23. Thereafter, a vary thin silicon oxide film 27 is formed on the inner wall of the groove 26, and a first gate oxide film 28 having a thin film is locally formed of the films 27, 24. Subsequently, an im purity high concentration doped first polysilicon layer 29 is deposited on the whole surface. This layer 29 is partly buried in the groove 26.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP23724687A JPS6481368A (en) | 1987-09-24 | 1987-09-24 | Nonvolatile semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP23724687A JPS6481368A (en) | 1987-09-24 | 1987-09-24 | Nonvolatile semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6481368A true JPS6481368A (en) | 1989-03-27 |
Family
ID=17012567
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP23724687A Pending JPS6481368A (en) | 1987-09-24 | 1987-09-24 | Nonvolatile semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6481368A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH04211177A (en) * | 1990-03-08 | 1992-08-03 | Matsushita Electron Corp | Nonvolatile semiconductor storage device and its manufacture |
| US5576569A (en) * | 1994-05-06 | 1996-11-19 | United Microelectronics Corporation | Electrically programmable and erasable memory device with depression in lightly-doped source |
| US5606521A (en) * | 1995-06-28 | 1997-02-25 | Philips Electronics North America Corp. | Electrically erasable and programmable read only memory with non-uniform dielectric thickness |
| US6294429B1 (en) | 1999-11-24 | 2001-09-25 | International Business Machines Corporation | Method of forming a point on a floating gate for electron injection |
-
1987
- 1987-09-24 JP JP23724687A patent/JPS6481368A/en active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH04211177A (en) * | 1990-03-08 | 1992-08-03 | Matsushita Electron Corp | Nonvolatile semiconductor storage device and its manufacture |
| US5576569A (en) * | 1994-05-06 | 1996-11-19 | United Microelectronics Corporation | Electrically programmable and erasable memory device with depression in lightly-doped source |
| US5606521A (en) * | 1995-06-28 | 1997-02-25 | Philips Electronics North America Corp. | Electrically erasable and programmable read only memory with non-uniform dielectric thickness |
| US6294429B1 (en) | 1999-11-24 | 2001-09-25 | International Business Machines Corporation | Method of forming a point on a floating gate for electron injection |
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