JPS6464273A - Superconducting switching device - Google Patents

Superconducting switching device

Info

Publication number
JPS6464273A
JPS6464273A JP62219149A JP21914987A JPS6464273A JP S6464273 A JPS6464273 A JP S6464273A JP 62219149 A JP62219149 A JP 62219149A JP 21914987 A JP21914987 A JP 21914987A JP S6464273 A JPS6464273 A JP S6464273A
Authority
JP
Japan
Prior art keywords
insulating film
interlayer insulating
upper electrode
etching
josephson junction
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP62219149A
Other languages
Japanese (ja)
Inventor
Hiroyuki Mori
Yoshinobu Taruya
Koji Yamada
Mikio Hirano
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
National Institute of Advanced Industrial Science and Technology AIST
Original Assignee
Agency of Industrial Science and Technology
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Agency of Industrial Science and Technology filed Critical Agency of Industrial Science and Technology
Priority to JP62219149A priority Critical patent/JPS6464273A/en
Publication of JPS6464273A publication Critical patent/JPS6464273A/en
Pending legal-status Critical Current

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  • Superconductor Devices And Manufacturing Methods Thereof (AREA)

Abstract

PURPOSE:To endure a dry etching process, and prevent the overetching at the time of processing an upper electrode, by a method wherein, after the upper electrode to form a Josephson junction is processed, a specific metal oxide is used as an interlayer insulating film on the part except the upper electrode forming region. CONSTITUTION:An upper electrode 4 to form a Josephson junction, the side wall of a tunnel barrier 3, a lower electrode 2, and a part of the side wall of the lower electrode are completely covered with an interlayer insulating film 5 of A2O3. When a contact hole is formed in an interlayer insulating film 6 of SiO2, etching is interrupted by the interlayer insulating film 5 of Al2O3, and the reaction does not progress as far as the Josephson junction part, in spite of exposure to the reactive ion etching by CHF3. Therefore, the deterioration of junction characteristics and the change of forming area of the upper electrode 4 due to side etching do not occur. For the interlayer insulating film 6, the following oxides are used besides Al2O3; BaO, CaO, CeO2, Er2O3, Cd2O3, La2O3, Li2O, Lu2O3, Pr2O3, SO2O3, Sm2O3, Tb2O3, Tm2O3, Y2O3, Tb2SO3, etc.
JP62219149A 1987-09-03 1987-09-03 Superconducting switching device Pending JPS6464273A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62219149A JPS6464273A (en) 1987-09-03 1987-09-03 Superconducting switching device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62219149A JPS6464273A (en) 1987-09-03 1987-09-03 Superconducting switching device

Publications (1)

Publication Number Publication Date
JPS6464273A true JPS6464273A (en) 1989-03-10

Family

ID=16730978

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62219149A Pending JPS6464273A (en) 1987-09-03 1987-09-03 Superconducting switching device

Country Status (1)

Country Link
JP (1) JPS6464273A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04196371A (en) * 1990-11-28 1992-07-16 Hitachi Ltd Superconductive device and manufacture thereof
US6333270B1 (en) 1998-05-18 2001-12-25 Nec Corporation Etching gas used for plasma-enhanced etching of vanadium oxide film and method of plasma-enhanced etching of vanadium oxide film
US6342672B1 (en) * 1994-02-14 2002-01-29 Canon Kabushiki Kaisha Superconducting lead with recoverable and nonrecoverable insulation

Non-Patent Citations (3)

* Cited by examiner, † Cited by third party
Title
J.APPL.PHYS=1985 *
J.APPL.PHYS=1986 *
J.APPL.PHYS=1987 *

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04196371A (en) * 1990-11-28 1992-07-16 Hitachi Ltd Superconductive device and manufacture thereof
US6342672B1 (en) * 1994-02-14 2002-01-29 Canon Kabushiki Kaisha Superconducting lead with recoverable and nonrecoverable insulation
US6333270B1 (en) 1998-05-18 2001-12-25 Nec Corporation Etching gas used for plasma-enhanced etching of vanadium oxide film and method of plasma-enhanced etching of vanadium oxide film

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