JPS6464273A - Superconducting switching device - Google Patents
Superconducting switching deviceInfo
- Publication number
- JPS6464273A JPS6464273A JP62219149A JP21914987A JPS6464273A JP S6464273 A JPS6464273 A JP S6464273A JP 62219149 A JP62219149 A JP 62219149A JP 21914987 A JP21914987 A JP 21914987A JP S6464273 A JPS6464273 A JP S6464273A
- Authority
- JP
- Japan
- Prior art keywords
- insulating film
- interlayer insulating
- upper electrode
- etching
- josephson junction
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Superconductor Devices And Manufacturing Methods Thereof (AREA)
Abstract
PURPOSE:To endure a dry etching process, and prevent the overetching at the time of processing an upper electrode, by a method wherein, after the upper electrode to form a Josephson junction is processed, a specific metal oxide is used as an interlayer insulating film on the part except the upper electrode forming region. CONSTITUTION:An upper electrode 4 to form a Josephson junction, the side wall of a tunnel barrier 3, a lower electrode 2, and a part of the side wall of the lower electrode are completely covered with an interlayer insulating film 5 of A2O3. When a contact hole is formed in an interlayer insulating film 6 of SiO2, etching is interrupted by the interlayer insulating film 5 of Al2O3, and the reaction does not progress as far as the Josephson junction part, in spite of exposure to the reactive ion etching by CHF3. Therefore, the deterioration of junction characteristics and the change of forming area of the upper electrode 4 due to side etching do not occur. For the interlayer insulating film 6, the following oxides are used besides Al2O3; BaO, CaO, CeO2, Er2O3, Cd2O3, La2O3, Li2O, Lu2O3, Pr2O3, SO2O3, Sm2O3, Tb2O3, Tm2O3, Y2O3, Tb2SO3, etc.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62219149A JPS6464273A (en) | 1987-09-03 | 1987-09-03 | Superconducting switching device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62219149A JPS6464273A (en) | 1987-09-03 | 1987-09-03 | Superconducting switching device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS6464273A true JPS6464273A (en) | 1989-03-10 |
Family
ID=16730978
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP62219149A Pending JPS6464273A (en) | 1987-09-03 | 1987-09-03 | Superconducting switching device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6464273A (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH04196371A (en) * | 1990-11-28 | 1992-07-16 | Hitachi Ltd | Superconductive device and manufacture thereof |
US6333270B1 (en) | 1998-05-18 | 2001-12-25 | Nec Corporation | Etching gas used for plasma-enhanced etching of vanadium oxide film and method of plasma-enhanced etching of vanadium oxide film |
US6342672B1 (en) * | 1994-02-14 | 2002-01-29 | Canon Kabushiki Kaisha | Superconducting lead with recoverable and nonrecoverable insulation |
-
1987
- 1987-09-03 JP JP62219149A patent/JPS6464273A/en active Pending
Non-Patent Citations (3)
Title |
---|
J.APPL.PHYS=1985 * |
J.APPL.PHYS=1986 * |
J.APPL.PHYS=1987 * |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH04196371A (en) * | 1990-11-28 | 1992-07-16 | Hitachi Ltd | Superconductive device and manufacture thereof |
US6342672B1 (en) * | 1994-02-14 | 2002-01-29 | Canon Kabushiki Kaisha | Superconducting lead with recoverable and nonrecoverable insulation |
US6333270B1 (en) | 1998-05-18 | 2001-12-25 | Nec Corporation | Etching gas used for plasma-enhanced etching of vanadium oxide film and method of plasma-enhanced etching of vanadium oxide film |
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