JPS6450566A - Mos semiconductor integrated circuit device and manufacture thereof - Google Patents
Mos semiconductor integrated circuit device and manufacture thereofInfo
- Publication number
- JPS6450566A JPS6450566A JP20772787A JP20772787A JPS6450566A JP S6450566 A JPS6450566 A JP S6450566A JP 20772787 A JP20772787 A JP 20772787A JP 20772787 A JP20772787 A JP 20772787A JP S6450566 A JPS6450566 A JP S6450566A
- Authority
- JP
- Japan
- Prior art keywords
- polycrystalline silicon
- layer
- side face
- polysilicide
- silicide layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
PURPOSE:To prevent the scattering of impurities into polycrystalline silicon while the annealing for lowering of the resistance of a polyside wiring is being conducted and also to prevent the fluctuation and the variability of work function and Vth by a method wherein a thermally oxidized film is formed on the surface and the side face of the polysilicide wiring consisting of an N<+>-doped polycrystalline silicon layer and a silicilicide layer. CONSTITUTION:In a MOS semiconductor integrated circuit device having a MOS field effect transistor, in which a polysilicide structure wiring consisting of an N<+>-doped polycrystalline silicon layer 4 and a silicide layer 5 is used as a gate electrode, as a constituent element, a thermally oxidized film 6 is formed on the surface and the side face of the above-mentioned silicide layer 5 and also on the side face of the polycrystalline silicon layer 4. For example, a polycrystalline silicon layer 4 is formed, and it is brought into the state of N<+> type by thermally diffusing phosphorus from above said layer 4. After a silicide layer 5 has been formed thereon, a polysilicide wiring, a polysilicide gate electrode and the like are formed by conducting selective etching. Then, an oxide film 6 is formed on the surface and the side face of the silicide layer 5 and on the side face of the polycrystalline silicon 4 by conducting light oxidation. Then, a heat treatment is conducted to reduce the resistance of the silicide layer 5.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP20772787A JPS6450566A (en) | 1987-08-21 | 1987-08-21 | Mos semiconductor integrated circuit device and manufacture thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP20772787A JPS6450566A (en) | 1987-08-21 | 1987-08-21 | Mos semiconductor integrated circuit device and manufacture thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6450566A true JPS6450566A (en) | 1989-02-27 |
Family
ID=16544541
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP20772787A Pending JPS6450566A (en) | 1987-08-21 | 1987-08-21 | Mos semiconductor integrated circuit device and manufacture thereof |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6450566A (en) |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS53112073A (en) * | 1977-03-11 | 1978-09-30 | Hitachi Ltd | Production of semiconductor device |
| JPS57167677A (en) * | 1981-03-31 | 1982-10-15 | Fujitsu Ltd | Semiconductor device and manufacture thereof |
| JPS61245552A (en) * | 1985-04-23 | 1986-10-31 | Fujitsu Ltd | Manufacture of semiconductor device |
-
1987
- 1987-08-21 JP JP20772787A patent/JPS6450566A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS53112073A (en) * | 1977-03-11 | 1978-09-30 | Hitachi Ltd | Production of semiconductor device |
| JPS57167677A (en) * | 1981-03-31 | 1982-10-15 | Fujitsu Ltd | Semiconductor device and manufacture thereof |
| JPS61245552A (en) * | 1985-04-23 | 1986-10-31 | Fujitsu Ltd | Manufacture of semiconductor device |
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