JPS643068B2 - - Google Patents

Info

Publication number
JPS643068B2
JPS643068B2 JP56159001A JP15900181A JPS643068B2 JP S643068 B2 JPS643068 B2 JP S643068B2 JP 56159001 A JP56159001 A JP 56159001A JP 15900181 A JP15900181 A JP 15900181A JP S643068 B2 JPS643068 B2 JP S643068B2
Authority
JP
Japan
Prior art keywords
electrode
emitter
region
layer
polycrystalline silicon
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP56159001A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5860569A (ja
Inventor
Isamu Kurio
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP56159001A priority Critical patent/JPS5860569A/ja
Publication of JPS5860569A publication Critical patent/JPS5860569A/ja
Publication of JPS643068B2 publication Critical patent/JPS643068B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/23—Electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. sources, drains, anodes or cathodes

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Bipolar Transistors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
JP56159001A 1981-10-06 1981-10-06 半導体装置の製造方法 Granted JPS5860569A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56159001A JPS5860569A (ja) 1981-10-06 1981-10-06 半導体装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56159001A JPS5860569A (ja) 1981-10-06 1981-10-06 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPS5860569A JPS5860569A (ja) 1983-04-11
JPS643068B2 true JPS643068B2 (en, 2012) 1989-01-19

Family

ID=15684057

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56159001A Granted JPS5860569A (ja) 1981-10-06 1981-10-06 半導体装置の製造方法

Country Status (1)

Country Link
JP (1) JPS5860569A (en, 2012)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5204735A (en) * 1988-04-21 1993-04-20 Kabushiki Kaisha Toshiba High-frequency semiconductor device having emitter stabilizing resistor and method of manufacturing the same
DE19839527C2 (de) 1998-08-29 2000-07-27 Daimler Chrysler Ag Lenksäule für ein Kraftfahrzeug

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4985957A (en, 2012) * 1972-10-02 1974-08-17
JPS5056179A (en, 2012) * 1973-09-13 1975-05-16
JPS5111582A (en) * 1974-07-19 1976-01-29 Fujitsu Ltd Handotaisochino seizohoho
JPS51127682A (en) * 1975-04-30 1976-11-06 Fujitsu Ltd Manufacturing process of semiconductor device
JPS51127681A (en) * 1975-04-30 1976-11-06 Fujitsu Ltd Manufacturing process of semiconductor device
JPS5222483A (en) * 1975-08-13 1977-02-19 Fujitsu Ltd Method of manufacturing semiconductor device

Also Published As

Publication number Publication date
JPS5860569A (ja) 1983-04-11

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