JPS6430267A - Bipolar transistor and manufacture thereof - Google Patents
Bipolar transistor and manufacture thereofInfo
- Publication number
- JPS6430267A JPS6430267A JP18617687A JP18617687A JPS6430267A JP S6430267 A JPS6430267 A JP S6430267A JP 18617687 A JP18617687 A JP 18617687A JP 18617687 A JP18617687 A JP 18617687A JP S6430267 A JPS6430267 A JP S6430267A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- collector
- implanted
- emitter
- electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Bipolar Transistors (AREA)
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62186176A JPH0824125B2 (ja) | 1987-07-24 | 1987-07-24 | バイポ−ラトランジスタおよびその製造方法 |
DE3850309T DE3850309T2 (de) | 1987-07-24 | 1988-07-22 | Hochfrequenz-Bipolartransistor und dessen Herstellungsverfahren. |
EP88306729A EP0300803B1 (en) | 1987-07-24 | 1988-07-22 | High-frequency bipolar transistor and its fabrication method |
US07/570,958 US5147775A (en) | 1987-07-24 | 1990-08-21 | Method of fabricating a high-frequency bipolar transistor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62186176A JPH0824125B2 (ja) | 1987-07-24 | 1987-07-24 | バイポ−ラトランジスタおよびその製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS6430267A true JPS6430267A (en) | 1989-02-01 |
JPH0824125B2 JPH0824125B2 (ja) | 1996-03-06 |
Family
ID=16183720
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP62186176A Expired - Lifetime JPH0824125B2 (ja) | 1987-07-24 | 1987-07-24 | バイポ−ラトランジスタおよびその製造方法 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH0824125B2 (ja) |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS59210669A (ja) * | 1982-09-17 | 1984-11-29 | フランス国 | 高速ヘテロ接合バイポーラ半導体装置 |
JPS6095969A (ja) * | 1983-10-31 | 1985-05-29 | Matsushita Electronics Corp | 半導体集積回路の製造方法 |
JPS6249662A (ja) * | 1985-08-29 | 1987-03-04 | Matsushita Electric Ind Co Ltd | ヘテロ接合バイポ−ラトランジスタおよびその製造方法 |
-
1987
- 1987-07-24 JP JP62186176A patent/JPH0824125B2/ja not_active Expired - Lifetime
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS59210669A (ja) * | 1982-09-17 | 1984-11-29 | フランス国 | 高速ヘテロ接合バイポーラ半導体装置 |
JPS6095969A (ja) * | 1983-10-31 | 1985-05-29 | Matsushita Electronics Corp | 半導体集積回路の製造方法 |
JPS6249662A (ja) * | 1985-08-29 | 1987-03-04 | Matsushita Electric Ind Co Ltd | ヘテロ接合バイポ−ラトランジスタおよびその製造方法 |
Also Published As
Publication number | Publication date |
---|---|
JPH0824125B2 (ja) | 1996-03-06 |
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